公开(公告)号：US09013027B2

公开(公告)日：2015-04-21

申请号：US13950783

申请日：2013-07-25

Applicant: Infineon Technologies AG

Inventor： Holger Huesken ,  Francisco Javier Santos Rodriguez ,  Wolfgang Wagner

IPC: H01L21/00 ,  H01L23/00 ,  H01L21/762

CPC classification number: H01L23/562 ,  H01L21/76202 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments relate to a semiconductor device, a semiconductor wafer structure, and a method for manufacturing or forming a semiconductor wafer structure. The semiconductor device includes a semiconductor substrate with a first region having a first conductivity type and a second region having a second conductivity type. The semiconductor device further includes an oxide structure with interrupted areas and a metal layer structure being in contact with the second region at least at the interrupted areas of the oxide.

Abstract translation: 实施例涉及半导体器件，半导体晶片结构以及用于制造或形成半导体晶片结构的方法。 半导体器件包括具有第一导电类型的第一区域和具有第二导电类型的第二区域的半导体衬底。 该半导体器件还包括具有中断区域的氧化物结构和至少在氧化物的中断区域处与第二区域接触的金属层结构。

公开(公告)号：US20140117530A1

公开(公告)日：2014-05-01

申请号：US13661923

申请日：2012-10-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Alexander Breymesser ,  Andre Brockmeier ,  Franz Dielacher ,  Francisco Javier Santos Rodriguez

IPC: H01L23/29 ,  H01L21/56

CPC classification number: H01L23/49822 ,  H01L21/565 ,  H01L21/568 ,  H01L23/291 ,  H01L23/3114 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/0345 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05672 ,  H01L2224/0568 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2224/73267 ,  H01L2224/92144 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10272 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1421 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/18162 ,  H01L2924/19104 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/00

Abstract: A device includes a semiconductor material having a first main surface, an opposite surface opposite to the first main surface and a side surface extending from the first main surface to the opposite surface. The device further includes a first electrical contact element arranged on the first main surface of the semiconductor material and a glass material. The glass material includes a second main surface wherein the glass material contacts the side surface of the semiconductor material and wherein the first main surface of the semiconductor material and the second main surface of the glass material are arranged in a common plane.

Abstract translation: 一种器件包括具有第一主表面，与第一主表面相对的相对表面和从第一主表面延伸到相对表面的侧表面的半导体材料。 该装置还包括布置在半导体材料的第一主表面上的第一电接触元件和玻璃材料。 玻璃材料包括第二主表面，其中玻璃材料接触半导体材料的侧表面，并且其中半导体材料的第一主表面和玻璃材料的第二主表面布置在公共平面中。

公开(公告)号：US20130164939A1

公开(公告)日：2013-06-27

申请号：US13774827

申请日：2013-02-22

Applicant: Infineon Technologies AG

Inventor： Gerald Lackner ,  Christian Maier ,  Francisco Javier Santos Rodriguez

IPC: H01L21/683 ,  H01L21/268 ,  H01L21/687 ,  H01L21/306 ,  H01L21/304 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/683 ,  H01L21/02104 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/6835 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/6875 ,  H01L2221/6834

Abstract: Some embodiments discussed relates to an apparatus for holding a substrate, comprising a body with a surface for a semiconductor wafer to rest on, with the surface having a first surface area on which a first area of the semiconductor wafer can rest, and a second surface area on which a second area of the semiconductor wafer can rest, wherein the second surface area protrudes with respect to the first surface area.

公开(公告)号：US11990520B2

公开(公告)日：2024-05-21

申请号：US17532030

申请日：2021-11-22

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Guenter Denifl ,  Ronny Kern ,  Michael Knabl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L21/02 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/544 ,  H01L29/16

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/544

Abstract: A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

公开(公告)号：US20230395394A1

公开(公告)日：2023-12-07

申请号：US18236434

申请日：2023-08-22

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Alexander Breymesser ,  Bernhard Goller ,  Matthias Kuenle ,  Helmut Oefner ,  Francisco Javier Santos Rodriguez ,  Stephan Voss

IPC: H01L21/324 ,  H01L21/78 ,  H01L21/265

CPC classification number: H01L21/3247 ,  H01L21/7806 ,  H01L21/26506

Abstract: A method of forming a semiconductor device includes: forming a first semiconductor layer on a semiconductor substrate, the first semiconductor layer being of the same dopant type as the semiconductor substrate, the first semiconductor layer having a higher dopant concentration than the semiconductor substrate; increasing the porosity of the first semiconductor layer; first annealing the first semiconductor layer in an atmosphere including an inert gas; forming a second semiconductor layer on the first semiconductor layer; and separating the second semiconductor layer from the semiconductor substrate by splitting within the first semiconductor layer. Additional methods of forming a semiconductor device are described.

公开(公告)号：US11515264B2

公开(公告)日：2022-11-29

申请号：US16421707

申请日：2019-05-24

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Alexander Breymesser ,  Erich Griebl ,  Michael Knabl ,  Matthias Kuenle ,  Andreas Moser ,  Roland Rupp ,  Hans-Joachim Schulze ,  Sokratis Sgouridis ,  Stephan Voss

IPC: H01L23/00 ,  H01L23/16

Abstract: A method for processing a semiconductor wafer is proposed. The method may include reducing a thickness of the semiconductor wafer. A carrier structure is placed on a first side of the semiconductor wafer, e.g. before or after reducing the thickness of the semiconductor wafer. The method further includes providing a support structure on a second side of the semiconductor wafer opposite to the first side, e.g. after reducing the thickness of the semiconductor wafer. Methods for welding a support structure onto a semiconductor wafer are proposed. Further, semiconductor composite structures with support structures welded onto a semiconductor wafer are proposed.

公开(公告)号：US20220367191A1

公开(公告)日：2022-11-17

申请号：US17869294

申请日：2022-07-20

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Roland Rupp ,  Hans-Joachim Schulze

IPC: H01L21/268 ,  H01L21/02 ,  H01L29/16 ,  H01L29/165

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a carbon structure on a handle substrate at a first surface of the handle substrate. The method further includes attaching a first surface of a semiconductor substrate to the first surface of the handle substrate. The method further includes processing the semiconductor substrate and performing a separation process to separate the handle substrate from the semiconductor substrate. The separation process comprises modifying the carbon structure.

公开(公告)号：US20220359428A1

公开(公告)日：2022-11-10

申请号：US17869114

申请日：2022-07-20

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Alexander Breymesser ,  Erich Griebl ,  Michael Knabl ,  Matthias Kuenle ,  Andreas Moser ,  Roland Rupp ,  Hans-Joachim Schulze ,  Sokratis Sgouridis ,  Stephan Voss

IPC: H01L23/00 ,  H01L23/16

Abstract: A method for processing a semiconductor wafer is proposed. The method may include: reducing a thickness of the semiconductor wafer; before or after reducing the thickness of the semiconductor wafer, placing a carrier structure at a first side of the semiconductor wafer; and after reducing the thickness of the semiconductor wafer, providing a support structure at a second side of the semiconductor wafer opposite to the first side. Methods for welding a support structure onto a semiconductor wafer are proposed. Further, semiconductor composite structures with support structures welded onto a semiconductor wafer are proposed.

公开(公告)号：US11081393B2

公开(公告)日：2021-08-03

申请号：US16707579

申请日：2019-12-09

Applicant: Infineon Technologies AG

Inventor： Christian Beyer ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze ,  Marko Swoboda

IPC: H01L21/82 ,  H01L21/683 ,  H01L21/223 ,  H01L21/268 ,  H01L21/02 ,  H01L21/3105 ,  H01L29/16 ,  H01L21/04 ,  H01L21/265

Abstract: A method of splitting a semiconductor wafer includes: forming one or more epitaxial layers on the semiconductor wafer; forming a plurality of device structures in the one or more epitaxial layers; forming a metallization layer and/or a passivation layer over the plurality of device structures; attaching a carrier to the semiconductor wafer with the one or more epitaxial layers, the carrier protecting the plurality of device structures and mechanically stabilizing the semiconductor wafer; forming a separation region within the semiconductor wafer, the separation region having at least one altered physical property which increases thermo-mechanical stress within the separation region relative to the remainder of the semiconductor wafer; and applying an external force to the semiconductor wafer such that at least one crack propagates along the separation region and the semiconductor wafer splits into two separate pieces, one of the pieces retaining the plurality of device structures.

公开(公告)号：US10796914B2

公开(公告)日：2020-10-06

申请号：US15648546

申请日：2017-07-13

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez

IPC: H01L21/308 ,  H01L21/20 ,  H01L21/02 ,  C25D5/08 ,  H01L21/304 ,  H01L21/67 ,  H01L21/311 ,  H01L21/306 ,  H01L29/739 ,  H01L21/3065

Abstract: In various embodiments, a method for processing a wafer is provided. The method includes forming a layer stack, including a support layer and a useful layer and a sacrificial region between them, said sacrificial region having, vis-à-vis a processing fluid, a lower mechanical and/or chemical resistance than the support layer and than the useful layer. The support layer has a depression, which exposes the sacrificial region. The method further includes forming at least one channel in the exposed sacrificial region by means of the processing fluid. The channel connects the depression to an exterior of the layer stack.