公开(公告)号：US09516428B2

公开(公告)日：2016-12-06

申请号：US13830111

申请日：2013-03-14

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Guenther Ruhl

IPC: H04R23/00 ,  H04R31/00 ,  B81C1/00 ,  B81B3/00 ,  H04R19/00 ,  H04R7/04

CPC classification number: H04R23/00 ,  B81B3/0018 ,  B81C1/00158 ,  H04R7/04 ,  H04R19/005 ,  H04R31/00 ,  H04R31/006 ,  H04R2307/023

Abstract: A MEMS acoustic transducer includes a substrate having a cavity therethrough, and a conductive back plate unit including a plurality of conductive perforated back plate portions which extend over the substrate cavity. A dielectric spacer arranged on the back plate unit between adjacent conductive perforated back plate portions, and one or more graphene membranes are supported by the dielectric spacer and extend over the conductive perforated back plate portions.

Abstract translation: MEMS声换能器包括具有穿过其中的腔的衬底，以及导电背板单元，其包括在衬底空腔上延伸的多个导电多孔背板部分。 布置在相邻的导电多孔背板部分之间的背板单元上的电介质隔离物和一个或多个石墨烯膜由介电间隔物支撑并在导电多孔背板部分上延伸。

公开(公告)号：US09224633B2

公开(公告)日：2015-12-29

申请号：US14340186

申请日：2014-07-24

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze ,  Karsten Kellermann ,  Michael Sommer ,  Christian Rottmair ,  Roland Rupp

IPC: H01L21/30 ,  H01L21/762 ,  H01L21/02 ,  H01L21/20 ,  C30B25/18 ,  H01L21/324

CPC classification number: H01L21/76254 ,  C30B25/186 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02598 ,  H01L21/2007 ,  H01L21/265 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76251 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract translation: 根据实施例，复合晶片包括具有石墨层和附着到载体衬底的单晶半导体层的载体衬底。

公开(公告)号：US09219049B2

公开(公告)日：2015-12-22

申请号：US14105414

申请日：2013-12-13

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Guenther Ruhl ,  Wolfgang Lehnert ,  Roland Rupp

IPC: H01L23/52 ,  H01L23/48 ,  H01L21/46 ,  H01L23/00

CPC classification number: H01L24/33 ,  H01L21/02002 ,  H01L21/187 ,  H01L21/6835 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/68381 ,  H01L2224/32225 ,  H01L2224/83055 ,  H01L2224/83099 ,  H01L2224/83851 ,  H01L2224/83855 ,  H01L2924/1026 ,  Y10T428/30

Abstract: A compound structure including a carrier wafer and at least one semiconductor piece bonded onto the carrier wafer by a bonding material obtained by a ceramic-forming polymer precursor.

Abstract translation: 一种复合结构，包括载体晶片和通过陶瓷形成聚合物前体获得的接合材料结合到载体晶片上的至少一个半导体片。

公开(公告)号：US09117748B2

公开(公告)日：2015-08-25

申请号：US13754986

申请日：2013-01-31

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Guenther Ruhl ,  Hans-Joerg Timme

IPC: H01L29/06 ,  H01L47/00 ,  H01L27/24 ,  H01L45/00 ,  H01L23/427 ,  H01L29/43 ,  H01L23/62 ,  H01L29/78 ,  H01L29/861 ,  H01L23/525

CPC classification number: H01L27/0251 ,  H01L23/367 ,  H01L23/3738 ,  H01L23/427 ,  H01L23/4275 ,  H01L23/49562 ,  H01L23/525 ,  H01L23/62 ,  H01L24/32 ,  H01L27/24 ,  H01L27/2436 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/41725 ,  H01L29/42376 ,  H01L29/435 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7801 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/861 ,  H01L29/8611 ,  H01L45/128 ,  H01L2224/32245 ,  H01L2924/0002 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1033 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/00

Abstract: A semiconductor device includes a transistor including a plurality of transistor cells in a semiconductor body, each transistor cell including a control terminal and first and second load terminals. The semiconductor device further includes a first electrical connection electrically connecting the first load terminals. The semiconductor device further includes a second electrical connection electrically connecting the second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C.

Abstract translation: 半导体器件包括在半导体本体中包括多个晶体管单元的晶体管，每个晶体管单元包括控制端子和第一和第二负载端子。 半导体器件还包括电连接第一负载端子的第一电连接。 半导体器件还包括电连接第二负载端子的第二电连接。 晶体管还包括在150℃和400℃之间的相变温度Tc显示出固相变化的相变材料。

公开(公告)号：US20140335676A1

公开(公告)日：2014-11-13

申请号：US14340186

申请日：2014-07-24

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Hermann Gruber ,  Wolfgang Lehnert ,  Guenther Ruhl ,  Raimund Foerg ,  Anton Mauder ,  Hans-Joachim Schulze ,  Karsten Kellermann ,  Michael Sommer ,  Christian Rottmair ,  Roland Rupp

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/324 ,  C30B25/18

CPC classification number: H01L21/76254 ,  C30B25/186 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/02598 ,  H01L21/2007 ,  H01L21/265 ,  H01L21/3212 ,  H01L21/324 ,  H01L21/76251 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003

Abstract: According to an embodiment, a composite wafer includes a carrier substrate having a graphite layer and a monocrystalline semiconductor layer attached to the carrier substrate.

Abstract translation: 根据实施例，复合晶片包括具有石墨层和附着到载体衬底的单晶半导体层的载体衬底。

公开(公告)号：US20140306184A1

公开(公告)日：2014-10-16

申请号：US13860612

申请日：2013-04-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Guenther Ruhl ,  Wolfgang Lehnert ,  Rudolf Berger

IPC: H01L29/16

CPC classification number: H01L29/1606 ,  H01L29/408 ,  H01L29/778 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/861

Abstract: In various embodiments, an electronic component is provided. The electronic component may include a dielectric structure; and a two-dimensional material containing structure over the dielectric structure. The dielectric structure is doped with dopants to change the electric characteristic of the two-dimensional material containing structure.

Abstract translation: 在各种实施例中，提供电子部件。 电子部件可以包括电介质结构; 以及在电介质结构上包含结构的二维材料。 电介质结构掺杂有掺杂剂以改变含二维材料结构的电特性。

公开(公告)号：US20140264255A1

公开(公告)日：2014-09-18

申请号：US14289512

申请日：2014-05-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Klaus Elian ,  Guenther Ruhl ,  Horst Theuss ,  Irmgard Escher-Poeppel

IPC: H01L29/16

CPC classification number: H01L29/1606 ,  G01N27/127 ,  G01N33/0059 ,  H01L21/561 ,  H01L21/568 ,  H01L23/28 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/315 ,  H01L23/49562 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/48 ,  H01L24/49 ,  H01L24/94 ,  H01L24/96 ,  H01L2224/02379 ,  H01L2224/0346 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24011 ,  H01L2224/24105 ,  H01L2224/24226 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/94 ,  H01L2224/96 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/11 ,  H01L2924/01082 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

Abstract: A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces.

Abstract translation: 在基板上产生石​​墨烯层。 在石墨烯层上沉积塑料材料以至少部分地覆盖石墨烯层。 将基板分成至少两个基片。

公开(公告)号：US20140260545A1

公开(公告)日：2014-09-18

申请号：US13834346

申请日：2013-03-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Guenther Ruhl ,  Werner Breuer

IPC: G01N27/14

CPC classification number: G01N27/14 ,  G01N27/124 ,  G01N33/006

Abstract: A sensor is provided, which may include: a sensor layer containing a sensor material, wherein an electrical resistance of the sensor material changes upon adsorption of an adsorbate at the sensor material; a circuit electrically coupled to the sensor layer and configured to apply an electrical current to the sensor layer that heats the sensor layer.

Abstract translation: 提供一种传感器，其可以包括：传感器层，其包含传感器材料，其中传感器材料的电阻在吸附物质在传感器材料上吸附时改变; 电耦合到所述传感器层并被配置为向传感器层施加电流以加热所述传感器层的电路。

公开(公告)号：US11557505B2

公开(公告)日：2023-01-17

申请号：US17028503

申请日：2020-09-22

Applicant: Infineon Technologies AG

Inventor： Wolfgang Lehnert ,  Rudolf Berger ,  Rudolf Lehner ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl

IPC: H01L21/762 ,  H01L21/78 ,  H01L21/683 ,  H01L29/16 ,  H01L29/20

Abstract: A method for manufacturing a semiconductor device includes implanting gas ions in a donor wafer and bonding the donor wafer to a carrier wafer to form a compound wafer. The method also includes subjecting the compound wafer to a thermal treatment to cause separation along a delamination layer and growing an epitaxial layer on a portion of separated compound wafer to form a semiconductor device layer. The method further includes cutting the carrier wafer.

公开(公告)号：US10651072B2

公开(公告)日：2020-05-12

申请号：US16264265

申请日：2019-01-31

Applicant: Infineon Technologies AG

Inventor： Rudolf Berger ,  Wolfgang Lehnert ,  Gerhard Metzger-Brueckl ,  Guenther Ruhl ,  Roland Rupp

IPC: H01L21/683 ,  H01L21/02 ,  H01L21/78 ,  H01L29/66 ,  H01L29/78

Abstract: This application relates to a method for producing a semiconductor component, in which a wafer composite is provided. The wafer composite includes a donor substrate, an auxiliary substrate and a separation layer arranged between the auxiliary substrate and the donor substrate. The separation layer has a support structure and sacrificial material, which is formed laterally between elements of the support structure. The auxiliary substrate is separated from the donor substrate. The separation includes a selective removal of the sacrificial material in relation to the support structure.