公开(公告)号：US5258649A

公开(公告)日：1993-11-02

申请号：US918137

申请日：1992-07-23

申请人： Akira Tanaka ,  Kazuji Yamada ,  Tadahiko Miyoshi ,  Kanji Otsuka

发明人： Akira Tanaka ,  Kazuji Yamada ,  Tadahiko Miyoshi ,  Kanji Otsuka

IPC分类号： H01L21/56 ,  H01L23/31 ,  H01L23/433 ,  H01L23/498 ,  H05K3/32 ,  H01L23/02 ,  H01L23/48

CPC分类号： H05K3/325 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49833 ,  H01L2224/16245 ,  H01L2224/73253 ,  H01L2924/01004 ,  H01L2924/01014 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/1815

摘要： A silicon chip is mounted on a portion a heat dissipation body, and a carrier film is inserted into a resin composition material. Each of input/output electrode portions of the silicon chip is connected electrically to each of lead wires of the carrier film. The electrical connection between the silicon chip and a circuit substrate is carried out by the carrier film. Another portion of the heat dissipation body is exposed on a surface of the resin composition material. A fixing means for fixing the resin composition material is formed integrally to the resin composition material or to the heat dissipation body. The resin composition material is fixed to a circuit substrate through the fixing means. The mechanical fixing between the resin composition material and the circuit substrate is carried out by the fixing means, which is separate from the carrier film. A heat dissipation fin may be provided on the heat dissipation body.

摘要翻译： 将硅芯片安装在散热体的一部分上，并将载体膜插入到树脂组合物材料中。 硅芯片的每个输入/输出电极部分电连接到载体膜的每个引线上。 硅芯片和电路基板之间的电连接由载体膜进行。 散热体的另一部分露出在树脂组合物材料的表面上。 用于固定树脂组合物材料的固定装置与树脂组合物材料或散热体一体地形成。 树脂组合物材料通过固定装置固定到电路基板。 树脂组合物材料和电路基板之间的机械固定由与载体膜分开的固定装置进行。 散热片可以设置在散热体上。

公开(公告)号：US5234866A

公开(公告)日：1993-08-10

申请号：US863060

申请日：1992-04-03

申请人： Takayuki Okinaga ,  Hiroshi Tachi ,  Hiroshi Ozaki ,  Kanji Otsuka ,  Michiaki Furukawa ,  Yasuyuki Yamasaki

发明人： Takayuki Okinaga ,  Hiroshi Tachi ,  Hiroshi Ozaki ,  Kanji Otsuka ,  Michiaki Furukawa ,  Yasuyuki Yamasaki

IPC分类号： H01L21/58 ,  H01L23/495 ,  H01L23/498

CPC分类号： H01L24/32 ,  H01L23/4951 ,  H01L23/49558 ,  H01L23/49586 ,  H01L23/49861 ,  H01L24/83 ,  H01L2224/05554 ,  H01L2224/27013 ,  H01L2224/2919 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2224/97 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/181 ,  Y10T29/49121

摘要： According to the present invention, as improvement in the adhesion of inner leads with a packaging resin in a resin-sealed semiconductor device is attained by spreading leads on or near the circuit-forming face of a pellet, or on or near the main non-circuit-forming face of the pellet to extend the lengths of the inner leads on or under the pellet.

摘要翻译： 根据本发明，通过在芯片的电路形成面上或靠近主非易失性存储器的电路形成面上或其附近扩散引线，可以实现在树脂密封半导体器件中内封装树脂与内包层树脂的密合性的提高， 颗粒的电路形成面，以延伸颗粒上或下方的内引线的长度。

公开(公告)号：US08508046B2

公开(公告)日：2013-08-13

申请号：US13371323

申请日：2012-02-10

申请人： Masao Sakuma ,  Kanji Otsuka

发明人： Masao Sakuma ,  Kanji Otsuka

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00

CPC分类号： H01L24/49 ,  H01L22/22 ,  H01L23/3107 ,  H01L23/4951 ,  H01L23/49575 ,  H01L23/525 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L24/97 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L2224/02311 ,  H01L2224/02375 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05548 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05557 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05624 ,  H01L2224/06164 ,  H01L2224/13 ,  H01L2224/13007 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/49113 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/859 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1432 ,  H01L2924/1434 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2224/32225 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2224/45099

摘要： A circuit substrate is presented. The circuit substrate comprises internal terminal electrode 2; a substrate 1; a wiring layer 21 formed on a portion of the surface of the substrate and having one end thereof connected to the internal terminal electrode; an insulating film contacting as a surface with the wiring layer; and an external terminal electrode 9 connected to the other end of the wiring layer and used for connecting to the exterior. The angle of the cross-section of the wiring layer taken perpendicularly to the surface of the substrate in the edge portion that the wiring layer contains is 55° (55 degree) or less, and the wiring layer that contains multiple mutually independent columnar crystals extending perpendicularly in a direction different from the direction of the surface of the substrate.

摘要翻译： 呈现电路基板。 电路基板包括内部端子电极2; 基板1; 形成在基板表面的一部分并且其一端连接到内部端子电极的布线层21; 与布线层作为表面接触的绝缘膜; 以及连接到布线层的另一端并用于连接到外部的外部端子电极9。 在布线层所包含的边缘部分中垂直于基板表面的布线层的横截面角为55°（55度）以下，并且包含多个相互独立的柱状晶体的布线层延伸 垂直于不同于衬底表面方向的方向。

公开(公告)号：US20110056645A1

公开(公告)日：2011-03-10

申请号：US12934403

申请日：2009-03-25

申请人： Yoshihiro Seimiya ,  Kanji Otsuka ,  Ai Mizuno

发明人： Yoshihiro Seimiya ,  Kanji Otsuka ,  Ai Mizuno

IPC分类号： B22D27/00 ,  C22B21/00

CPC分类号： B21J5/00 ,  B21J5/004 ,  B22D17/007 ,  B22D18/02 ,  B22F1/02 ,  B22F3/17 ,  B22F3/225 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/056 ,  C22C1/1078 ,  C22C32/0068 ,  B22F1/0003 ,  C22C1/1036 ,  B22F2201/02

摘要： A method of manufacturing a massive mixture of aluminum nitride and aluminum includes a first heat treatment process of manufacturing the massive mixture of aluminum nitride and aluminum by heating aluminum powder (21) and aluminum pieces (20) inserted into a vessel (13) at a temperature of a melting point of aluminum or higher under a nitrogen atmosphere. An oxide film is formed over the surface of the aluminum powder (21). The oxide film is, for example, a natural oxide film. The weight ratio of the aluminum powder (21) to the aluminum pieces (20) is, for example, 0.1 or less.

摘要翻译： 一种制造氮化铝和铝的大块混合物的方法包括通过加热铝粉（21）和插入容器（13）中的铝片（20）来制造氮化铝和铝的块状混合物的第一热处理工艺， 在氮气氛下的铝的熔点以上的温度。 在铝粉末（21）的表面上形成氧化膜。 氧化膜例如是天然氧化膜。 铝粉末（21）与铝片（20）的重量比例如为0.1以下。

公开(公告)号：US20100014211A1

公开(公告)日：2010-01-21

申请号：US12519020

申请日：2007-12-13

申请人： Kanji Otsuka

发明人： Kanji Otsuka

IPC分类号： H01G4/20 ,  H01G9/02

CPC分类号： H01G11/26 ,  H01G11/30 ,  H01G11/46 ,  Y02E60/13

摘要： A storage battery of the present invention is a capacitor-type storage battery having a short charging time and a long life, and capable of realizing a high output voltage. The storage battery includes a metal sheet 10 connected to a first terminal 22, a first metamaterial film 13 formed on a front surface of the metal sheet 10, and a first conductive film 12 formed on the first metamaterial film 13 and connected to a second terminal 21. The first metamaterial film 13 is a polycrystalline semiconductor film, and in each of crystal grains constituting the polycrystalline semiconductor film, the inside is of a first conductivity type, and the vicinity of interface is of a second conductivity type. An oxide insulating film may be formed on a surface of the metal sheet 10.

摘要翻译： 本发明的蓄电池是具有短的充电时间和长寿命并且能够实现高输出电压的电容器型蓄电池。 蓄电池包括连接到第一端子22的金属片10，形成在金属片10的前表面上的第一超材料膜13和形成在第一超材料膜13上并连接到第二端子的第一导电膜12 第一超材料膜13是多晶半导体膜，并且在构成多晶半导体膜的晶粒的每一个中，内部是第一导电型，并且界面附近是第二导电类型。 可以在金属片10的表面上形成氧化物绝缘膜。

公开(公告)号：US07173449B2

公开(公告)日：2007-02-06

申请号：US10353040

申请日：2003-01-29

申请人： Kanji Otsuka ,  Tamotsu Usami

发明人： Kanji Otsuka ,  Tamotsu Usami

IPC分类号： H03K17/16 ,  H03K19/0175

CPC分类号： H04L25/0292 ,  H01L24/46 ,  H01L2224/05553 ,  H01L2224/48137 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H04L25/0272 ,  H04L25/0278 ,  H04L25/028 ,  H01L2924/00 ,  H01L2224/45099

摘要： Signal transmission technology for transmitting 20–50 GHz band digital high speed signals, while keeping to the system structure and element structure of the prior art is provided. A signal transmission system is provided in which the driver and the receiver comprise the logic circuit and the memory circuit for a transistor extending an entire electronic circuit, and wherein the driver is connected to the receiver via a signal transmission line, and to the power source Vdd via the power source/ground transmission line, and the receiver circuits and the driver and receiver all have substantially differential input and differential output, and at the output terminal of the substantially differential output of the driver there are no connections to a power source or a ground and the receiver receives signals by detecting potential difference of a substantially differential input signal and there are no distribution wires in the signal transmission lines.

摘要翻译： 提供用于传输20-50GHz频带数字高速信号的信号传输技术，同时保持现有技术的系统结构和元件结构。 提供了一种信号传输系统，其中驱动器和接收器包括用于延伸整个电子电路的晶体管的逻辑电路和存储器电路，并且其中驱动器经由信号传输线连接到接收器，并且连接到电源 Vdd通过电源/接地传输线路，接收器电路和驱动器和接收器均具有实质差分输入和差分输出，并且在驱动器的基本差分输出的输出端子处没有连接到电源或 接地和接收器通过检测基本上差分输入信号的电位差来接收信号，并且在信号传输线中不存在配线。

公开(公告)号：US20060226927A1

公开(公告)日：2006-10-12

申请号：US11440113

申请日：2006-05-25

申请人： Kanji Otsuka ,  Tamotsu Usami

发明人： Kanji Otsuka ,  Tamotsu Usami

IPC分类号： H01P1/26 ,  G03C5/00

CPC分类号： H04L25/0298 ,  G06F13/4086 ,  H01L2224/32225 ,  H04L25/0266 ,  H05K1/024 ,  H05K1/0246 ,  H05K1/0306 ,  H05K1/167 ,  H05K3/284 ,  H05K2201/09672 ,  H05K2201/10022 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49146

摘要： A terminal resistor is provided at the end of a bus formed on a wiring substrate. An insulator having a large dielectric loss angle is provided in the vicinity of the terminal resistor to absorb high frequency electromagnetic waves in the vicinity. This arrangement permits successful transmission of digital signals in the GHz region using a conventional terminal resistor.

摘要翻译： 端子电阻器设置在形成在布线基板上的总线的端部。 在端子电阻附近设置具有大的介电损耗角的绝缘体，以吸收附近的高频电磁波。 这种布置允许使用传统的终端电阻器在GHz区域成功传输数字信号。

公开(公告)号：US07116184B2

公开(公告)日：2006-10-03

申请号：US10079464

申请日：2002-02-22

申请人： Kanji Otsuka ,  Tamotsu Usami

发明人： Kanji Otsuka ,  Tamotsu Usami

IPC分类号： H01P1/24

CPC分类号： H04L25/0298 ,  G06F13/4086 ,  H01L2224/32225 ,  H04L25/0266 ,  H05K1/024 ,  H05K1/0246 ,  H05K1/0306 ,  H05K1/167 ,  H05K3/284 ,  H05K2201/09672 ,  H05K2201/10022 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49146

摘要： A terminal resistor is provided at the end of a bus formed on a wiring substrate. An insulator having a large dielectric loss angle is provided in the vicinity of the terminal resistor to absorb high frequency electromagnetic waves in the vicinity. This arrangement permits successful transmission of digital signals in the GHz region using a conventional terminal resistor.

公开(公告)号：US06975489B2

公开(公告)日：2005-12-13

申请号：US10348896

申请日：2003-01-23

申请人： Kanji Otsuka ,  Tadatomo Suga ,  Tamotsu Usami

发明人： Kanji Otsuka ,  Tadatomo Suga ,  Tamotsu Usami

IPC分类号： H01L21/822 ,  H01L21/82 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/08 ,  H03K19/00 ,  H03K19/0175 ,  H01G2/12

CPC分类号： H01L23/5225 ,  H01L23/5223 ,  H01L23/642 ,  H01L27/0805 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01L2924/00

摘要： A bypass capacitor having a given capacitance is arranged on the power/ground line adjacently to a driver circuit in a chip to reduce an effect of transient phenomenon at switching. The capacitance of the bypass capacitor is preset so as to be larger than a parasitic capacitance of the driver circuit to prevent the characteristic impedance of the power/ground line from being higher than the characteristic impedance of internal wiring.

摘要翻译： 具有给定电容的旁路电容器布置在与芯片中的驱动器电路相邻的电源/接地线上，以减少切换时的瞬态现象的影响。 旁路电容器的电容被预设为大于驱动电路的寄生电容，以防止电力/接地线的特性阻抗高于内部布线的特性阻抗。

公开(公告)号：US06961229B2

公开(公告)日：2005-11-01

申请号：US10781942

申请日：2004-02-20

申请人： Kanji Otsuka ,  Tamotsu Usami

发明人： Kanji Otsuka ,  Tamotsu Usami

IPC分类号： H01L21/822 ,  G06F13/40 ,  H01L23/528 ,  H01L23/66 ,  H01L27/04 ,  H01P3/00 ,  H01P3/08 ,  H01G4/00 ,  H03H7/38

CPC分类号： H01P3/081 ,  H01L23/5286 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/3011 ,  H01P3/026 ,  H01P3/08 ,  H01L2924/00

摘要： An electronic circuit device having a power-supply structure capable of supporting fast signals in and above a GHz band is offered. A driver transistor is formed in a surface of a semiconductor substrate. Power-supply/ground pair transmission lines which provide the driver transistor with power and signal/ground pair transmission lines which transmit signals to a receiver are formed on the semiconductor substrate. The power-supply/ground pair transmission lines are connected to a drain layer of the driver transistor and a P+ layer in a P well. The signal/ground pair transmission lines are connected to a source layer of the driver transistor and a P+ layer in the P well.

摘要翻译： 提供具有能够支持GHz频带以内的快速信号的电源结构的电子电路装置。 在半导体衬底的表面上形成驱动晶体管。 在半导体衬底上形成向驱动晶体管提供向接收器发送信号的功率和信号/接地对传输线的电源/接地对传输线。 电源/接地对传输线连接到P阱中的驱动晶体管的漏极层和P + SUP层。 信号/接地对传输线连接到P阱中的驱动晶体管的源极层和P + SUP层。