摘要:
The present application discloses a light-emitting semiconductor device including a transparent layer having an upper surface, a lower surface, and a sidewall; a wavelength conversion structure arranged on the upper surface; an epitaxial structure arranged on the lower surface and having a side surface devoid of the transparent layer and the wavelength conversion structure; and a reflective wall arranged to cover the sidewall.
摘要:
A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.
摘要:
An opto-electronic device package structure for multicolor light is disclosed. The package structure comprises a transparent carrier, a circuit layer on the transparent carrier, an opto-electronic device emitting the light of the first wavelength and is electrically connecting with the circuit layer on the transparent carrier, a first wavelength conversion structure on the lateral side of the opto-electronic device, a reflective layer on the first wavelength conversion structure, and a transparent material for package on the reflective layer and on the opto-electronic device.
摘要:
A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located.
摘要:
A light-emitting device package is disclosed and comprises at least one light-emitting device and a carrier. The light-emitting device includes a light-emitting diode chip attached to a first surface of a transparent substrate, wherein the chip comprises a first type conductivity semiconductor layer, an active layer and a second type conductivity semiconductor layer. The carrier comprises a p electrode, an n electrode, a platform and a reflective inside wall. The transparent substrate of the light-emitting device is attached to the platform by an adhering layer. In addition, an angle between the first surface of the transparent substrate and the platform is not equal to zero degree, and the better is about 90 degree.
摘要:
This invention relates to a hybrid composite material substrate. The substrate includes a conductive layer, an insulating layer, and a dispersion material extending from the conductive layer into the insulating layer.
摘要:
The present invention discloses a light-emitting diode with enhanced brightness and a method for fabricating the same. The light-emitting diode comprises: an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of spacers inside the lighting-emitting active layer; at least one conductive contact, formed on the bottom surface where no spacer is formed inside the lighting-emitting active layer; a transparent material layer formed in the spacers; an adhesion layer formed between the transparent material layer and a permanent substrate; a bottom electrode formed on the bottom surface of the permanent substrate; and an opposed electrode formed on the top surface of the epitaxial LED structure.
摘要:
A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.