Light-emitting semiconductor device and package thereof
    61.
    发明授权
    Light-emitting semiconductor device and package thereof 有权
    发光半导体器件及其封装

    公开(公告)号:US08395175B2

    公开(公告)日:2013-03-12

    申请号:US13569612

    申请日:2012-08-08

    申请人: Chia-Liang Hsu

    发明人: Chia-Liang Hsu

    IPC分类号: H01L33/00

    摘要: The present application discloses a light-emitting semiconductor device including a transparent layer having an upper surface, a lower surface, and a sidewall; a wavelength conversion structure arranged on the upper surface; an epitaxial structure arranged on the lower surface and having a side surface devoid of the transparent layer and the wavelength conversion structure; and a reflective wall arranged to cover the sidewall.

    摘要翻译: 本申请公开了一种包括具有上表面,下表面和侧壁的透明层的发光半导体器件; 布置在所述上​​表面上的波长转换结构; 外延结构,其布置在下表面上并具有不具有透明层和波长转换结构的侧表面; 以及布置成覆盖侧壁的反射壁。

    LIGHT-EMITTING DEVICE PACKAGE
    62.
    发明申请
    LIGHT-EMITTING DEVICE PACKAGE 审中-公开
    发光装置包装

    公开(公告)号:US20130003344A1

    公开(公告)日:2013-01-03

    申请号:US13614144

    申请日:2012-09-13

    申请人: Chia-Liang Hsu

    发明人: Chia-Liang Hsu

    IPC分类号: H01L33/60 G09F13/04

    摘要: A light-emitting diode device is disclosed. The light-emitting diode device includes a carrier including a platform; a transparent substrate formed on the platform including a first surface; a multi-LED structure including a first light-emitting structure formed on the first surface, the first light-emitting structure including a first first-type semiconductor layer, a first second-type semiconductor layer, and a first active layer formed between the first first-type semiconductor layer and the first second-type semiconductor layer; a second light-emitting structure formed on the first surface, the second light-emitting structure including a second first-type semiconductor layer, a second second-type semiconductor layer, and a second active layer formed between the second first-type semiconductor layer and the second second-type semiconductor layer; and a connecting layer formed between the first light-emitting structure and the second light-emitting structure; wherein an angle between the first surface of the transparent substrate and the platform is not equal to zero.

    摘要翻译: 公开了一种发光二极管器件。 发光二极管装置包括:载体,包括平台; 形成在所述平台上的透明基板,包括第一表面; 包括形成在第一表面上的第一发光结构的多LED结构,所述第一发光结构包括第一第一类型半导体层,第一第二类型半导体层和形成在第一表面之间的第一有源层 第一类型半导体层和第一第二类型半导体层; 第二发光结构,形成在第一表面上,第二发光结构包括第二第一类型半导体层,第二第二类型半导体层和形成在第二第一类型半导体层和第二有源层之间的第二有源层, 所述第二二次半导体层; 以及形成在所述第一发光结构和所述第二发光结构之间的连接层; 其中所述透明基板的第一表面和所述平台之间的角度不等于零。

    Single chip multicolor package
    63.
    发明授权
    Single chip multicolor package 有权
    单芯片多色封装

    公开(公告)号:US08217559B2

    公开(公告)日:2012-07-10

    申请号:US12628546

    申请日:2009-12-01

    申请人: Chia-Liang Hsu

    发明人: Chia-Liang Hsu

    摘要: An opto-electronic device package structure for multicolor light is disclosed. The package structure comprises a transparent carrier, a circuit layer on the transparent carrier, an opto-electronic device emitting the light of the first wavelength and is electrically connecting with the circuit layer on the transparent carrier, a first wavelength conversion structure on the lateral side of the opto-electronic device, a reflective layer on the first wavelength conversion structure, and a transparent material for package on the reflective layer and on the opto-electronic device.

    摘要翻译: 公开了一种用于多色光的光电器件封装结构。 封装结构包括透明载体,透明载体上的电路层,发射第一波长的光并与透明载体上的电路层电连接的光电器件,在侧面上的第一波长转换结构 的光电器件,第一波长转换结构上的反射层,以及用于在反射层和光电器件上封装的透明材料。

    LIGHT EMITTING STRUCTURE AND MANUFACTURING METHOD THEREOF
    66.
    发明申请
    LIGHT EMITTING STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
    发光结构及其制造方法

    公开(公告)号:US20120056229A1

    公开(公告)日:2012-03-08

    申请号:US13227841

    申请日:2011-09-08

    申请人: Chia-Liang Hsu

    发明人: Chia-Liang Hsu

    IPC分类号: H01L33/58 H01L33/50

    摘要: A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located.

    摘要翻译: 发光结构包括包括第一连接点和第二连接点的半导体发光元件。 发光结构还包括电连接到第一连接点的第一电极和与第二连接点电连接的第二电极。 第一电极和第二电极可以形成半导体发光元件所在的凹部。

    Light-emiting device package
    67.
    发明申请
    Light-emiting device package 有权
    发光装置封装

    公开(公告)号:US20090122521A1

    公开(公告)日:2009-05-14

    申请号:US12292161

    申请日:2008-11-13

    申请人: Chia-Liang Hsu

    发明人: Chia-Liang Hsu

    IPC分类号: G02F1/13357 F21V21/00

    摘要: A light-emitting device package is disclosed and comprises at least one light-emitting device and a carrier. The light-emitting device includes a light-emitting diode chip attached to a first surface of a transparent substrate, wherein the chip comprises a first type conductivity semiconductor layer, an active layer and a second type conductivity semiconductor layer. The carrier comprises a p electrode, an n electrode, a platform and a reflective inside wall. The transparent substrate of the light-emitting device is attached to the platform by an adhering layer. In addition, an angle between the first surface of the transparent substrate and the platform is not equal to zero degree, and the better is about 90 degree.

    摘要翻译: 公开了一种发光器件封装,并且包括至少一个发光器件和载体。 发光装置包括附着到透明基板的第一表面的发光二极管芯片,其中芯片包括第一类型的导电半导体层,有源层和第二类型的导电半导体层。 载体包括p电极,n电极,平台和反射内壁。 发光装置的透明基板通过粘附层附着在平台上。 此外,透明基板的第一表面与平台之间的角度不等于零度,并且更好地为大约90度。

    Semiconductor device structures and the separating methods thereof
    70.
    发明授权
    Semiconductor device structures and the separating methods thereof 有权
    半导体器件结构及其分离方法

    公开(公告)号:US08765504B2

    公开(公告)日:2014-07-01

    申请号:US13490992

    申请日:2012-06-07

    摘要: A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.

    摘要翻译: 分离半导体器件结构的方法包括提供具有第一表面和与第一表面相对的第二表面的衬底的步骤; 在所述第一表面上形成多个半导体外延堆叠; 形成覆盖所述半导体外延叠层并暴露所述第一表面的一部分或覆盖对应于所述半导体外延叠层的所述第二表面的图案化抗蚀剂层; 进行物理蚀刻处理以直接地将所述基板服务于所述第一表面或未被所述图案化抗蚀剂层覆盖的第二表面的区域; 以及分离半导体外延叠层以形成多个半导体器件结构。