公开(公告)号：US10651849B2

公开(公告)日：2020-05-12

申请号：US16356243

申请日：2019-03-18

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K19/00 ,  G06F13/40 ,  G11C11/4093 ,  H03K19/0175 ,  G11C11/401 ,  G11C11/419 ,  G11C16/26 ,  G11C11/41 ,  G11C11/4063 ,  G11C11/413 ,  G11C11/417 ,  G11C16/06 ,  G11C16/32 ,  G06F3/06

Abstract: A memory control component outputs a memory write command to a memory IC and also outputs write data to be received via data inputs of the memory IC. Prior to reception of the write data within the memory IC, the memory control component asserts a termination control signal that causes the memory IC to apply to the data inputs a first on-die termination impedance during reception of the write data followed by a second on-die termination impedance after the write data has been received. The memory control component deasserts the termination control signal to cause the memory IC to apply no termination impedance to the data inputs.

公开(公告)号：US10388337B2

公开(公告)日：2019-08-20

申请号：US15889191

申请日：2018-02-05

Applicant: Rambus Inc.

Inventor： James E. Harris ,  Thomas Vogelsang ,  Frederick A. Ware ,  Ian P. Shaeffer

IPC: G11C7/00 ,  G11C7/10 ,  G11C5/02 ,  G11C11/4076 ,  G11C11/408 ,  G11C11/4091 ,  G11C7/06 ,  G11C7/08 ,  G11C7/12 ,  G11C7/22 ,  G11C8/08 ,  G11C8/10

Abstract: Row activation operations within a memory component are carried out with respect to subrows instead of complete storage rows to reduce power consumption. Further, instead of activating subrows in response to row commands, subrow activation operations are deferred until receipt of column commands that specify the column operation to be performed and the subrow to be activated.

公开(公告)号：US20190088295A1

公开(公告)日：2019-03-21

申请号：US16109607

申请日：2018-08-22

Applicant: Rambus Inc.

Inventor： Ian P. Shaeffer ,  Bret Stott ,  Benedict C. Lau

IPC: G11C7/10 ,  G06F12/00 ,  G06F13/16

CPC classification number: G11C7/1063 ,  G06F12/00 ,  G06F13/1689 ,  G11C7/1072

Abstract: A memory controller having a time-staggered request signal output. A first timing signal is generated while a second timing signal is generated having a first phase difference relative to the first timing signal. An address value is transmitted in response to the first timing signal and a control value is transmitted in response to the second timing signal, the address value and control value constituting portions of a first memory access request.

公开(公告)号：US10162772B2

公开(公告)日：2018-12-25

申请号：US15424714

申请日：2017-02-03

Applicant: Rambus Inc.

Inventor： Jared L. Zerbe ,  Ian P. Shaeffer ,  John Eble

IPC: G06F1/04 ,  G06F1/10 ,  G06F13/16 ,  G11C7/22 ,  G06F1/06 ,  G06F1/08 ,  H04L7/033 ,  G11C7/04

Abstract: A memory controller includes a clock generator to generate a first clock signal and a timing circuit to generate a second clock signal from the first clock signal. The second clock signal times communications with any of a plurality of memory devices in respective ranks, including a first memory device in a first rank and a second memory device in a second rank. The timing circuit is configured to adjust a phase of the first clock signal, when the memory controller is communicating with the second memory device, based on calibration data associated with the second memory device and timing adjustment data associated with feedback from at least the first memory device.

公开(公告)号：US10056902B2

公开(公告)日：2018-08-21

申请号：US15581480

申请日：2017-04-28

Applicant: Rambus Inc.

Inventor： Kyung Suk Oh ,  Ian P. Shaeffer

IPC: H03K17/16 ,  H03K19/00 ,  H03K19/0175 ,  G11C16/32 ,  G06F3/06 ,  G06F13/40 ,  G11C11/401 ,  G11C11/4063 ,  G11C11/4093 ,  G11C11/41 ,  G11C11/413 ,  G11C11/417 ,  G11C11/419 ,  G11C16/06 ,  G11C16/26

CPC classification number: H03K19/0005 ,  G06F3/0605 ,  G06F3/0659 ,  G06F3/0685 ,  G06F13/4086 ,  G11C11/401 ,  G11C11/4063 ,  G11C11/4093 ,  G11C11/41 ,  G11C11/413 ,  G11C11/417 ,  G11C11/419 ,  G11C16/06 ,  G11C16/26 ,  G11C16/32 ,  H03K19/017545

Abstract: A memory control component outputs a memory write command to a memory IC and also outputs write data to be received via data inputs of the memory IC. Prior to reception of the write data within the memory IC, the memory control component asserts a termination control signal that causes the memory IC to apply to the data inputs a first on-die termination impedance during reception of the write data followed by a second on-die termination impedance after the write data has been received. The memory control component deasserts the termination control signal to cause the memory IC to apply no termination impedance to the data inputs.

公开(公告)号：US20180082725A1

公开(公告)日：2018-03-22

申请号：US15665312

申请日：2017-07-31

Applicant: Rambus Inc.

Inventor： Bret Stott ,  Frederick A. Ware ,  Ian P. Shaeffer ,  Yuanlong Wang

IPC: G11C7/22 ,  G06F13/16 ,  G11C7/02

CPC classification number: G11C7/222 ,  G06F13/1689 ,  G11C7/02 ,  G11C7/22

Abstract: A memory controller includes an interface to receive a data strobe signal and corresponding read data. The data strobe signal and the read data correspond to a read command issued by the memory controller, and the read data is received in accordance with the data strobe signal and an enable signal. A circuit in the memory controller is to dynamically adjust a timing offset between the enable signal and the data strobe signal, and control logic is to issue a supplemental read command in accordance with a determination that a time interval since a last read command issued by the memory controller exceeds a predetermined value.

公开(公告)号：US09847248B2

公开(公告)日：2017-12-19

申请号：US14272295

申请日：2014-05-07

Applicant: Rambus Inc.

Inventor： Frederick A. Ware ,  Ely K. Tsern ,  Ian P. Shaeffer

IPC: H01L21/768 ,  H01L25/065

CPC classification number: H01L21/768 ,  H01L25/0657 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05599 ,  H01L2224/16145 ,  H01L2225/06513 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/00

Abstract: Multiple devices, including a first device and a second device, have operational circuitry and opposing first and second surfaces. First and second electrical contacts are formed at the first surface, while a third electrical contact is formed at the second surface opposite the first electrical contact. The first electrical contact is electrically connected to the operational circuitry, and the second electrical contact is electrically connected to the third electrical contact. The first device and the second device are subsequently stacked such that the first surface of the second device is located adjacent the second surface of the first device such that the first electrical contact of the second device is aligned with the third electrical contact of the first device. The first electrical contact of the second device is electrically connected to the third electrical contact of the first device.

公开(公告)号：US20170352390A1

公开(公告)日：2017-12-07

申请号：US15626097

申请日：2017-06-17

Applicant: Rambus Inc.

Inventor： Ian P. Shaeffer ,  Bret Stott ,  Benedict C. Lau

IPC: G11C7/10 ,  G06F13/16 ,  G06F12/00

CPC classification number: G11C7/1063 ,  G06F12/00 ,  G06F13/1689 ,  G11C7/1072

Abstract: A memory controller having a time-staggered request signal output. A first timing signal is generated while a second timing signal is generated having a first phase difference relative to the first timing signal. An address value is transmitted in response to the first timing signal and a control value is transmitted in response to the second timing signal, the address value and control value constituting portions of a first memory access request.

公开(公告)号：US20170323672A1

公开(公告)日：2017-11-09

申请号：US15604251

申请日：2017-05-24

Applicant: Rambus Inc.

Inventor： Ian P. Shaeffer ,  Lei Luo

IPC: G11C7/22 ,  G06F13/40 ,  G06F1/08 ,  G06F13/16 ,  G11C7/10 ,  G06F13/42

CPC classification number: G11C7/22 ,  G06F1/08 ,  G06F13/16 ,  G06F13/4068 ,  G06F13/4243 ,  G11C7/1072

Abstract: In an illustrative embodiment, the memory circuit includes first and second data paths on which data is transferred for read and write memory operations and first and second mixer circuits for adjusting the phase of clock signals applied to their inputs. The mixer circuits are cross-coupled so that the outputs of the first and second mixers are both available to both the first and second data paths. One mixer is used to provide a first phase adjusted clock signal for use by the operating circuit and the other mixer is used to provide a second phase adjusted clock signal for use by a following operation whatever that may be.

公开(公告)号：US20170192912A1

公开(公告)日：2017-07-06

申请号：US15424714

申请日：2017-02-03

Applicant: Rambus Inc.

Inventor： Jared L. Zerbe ,  Ian P. Shaeffer ,  John Eble

IPC: G06F13/16 ,  G06F1/06 ,  G06F1/10 ,  G11C7/22

CPC classification number: G06F13/1689 ,  G06F1/04 ,  G06F1/06 ,  G06F1/08 ,  G06F1/10 ,  G06F13/161 ,  G06F13/1657 ,  G11C7/04 ,  G11C7/222 ,  H04L7/033

Abstract: A memory controller includes a clock generator to generate a first clock signal and a timing circuit to generate a second clock signal from the first clock signal. The second clock signal times communications with any of a plurality of memory devices in respective ranks, including a first memory device in a first rank and a second memory device in a second rank. The timing circuit is configured to adjust a phase of the first clock signal, when the memory controller is communicating with the second memory device, based on calibration data associated with the second memory device and timing adjustment data associated with feedback from at least the first memory device.