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100 条记录 (耗时 0.029 秒)

    MOS component with a particular source and base structure
    62.
    发明授权
    MOS component with a particular source and base structure 失效
    MOS组件具有特定的源和基础结构

    公开(公告)号：US5396088A

    公开(公告)日：1995-03-07

    申请号：US240138

    申请日：1994-05-10

    申请人： Helmut Strack

    发明人： Helmut Strack

    IPC分类号： H01L29/10 ,  H01L29/739 ,  H01L29/78 ,  H01L29/784

    CPC分类号： H01L29/7395 ,  H01L29/1095 ,  H01L29/7802 ,  H01L2924/0002

    摘要： The source zone of an MOS component on a semiconductor body is disposed on the upper side of the gate electrode, and is in contact at an upper side of the source zone, with a source electrode. The base zone laterally adjoins the source zone and laterally adjoins the gate electrode at the drain zone. The minority charge carriers which flow from the semiconductor body to the cathode therefore flow directly to the source electrode through that part of the base zone disposed next to the gate electrode. An activation of a parasitic bipolar transistor, and thus the occurrence of so-called second breakdown, are thus avoided.

    摘要翻译： 半导体主体上的MOS部件的源极区域设置在栅电极的上侧，并且在源极区的上侧与源电极接触。 基区横向邻接源区，并在漏区附近横向邻接栅电极。 因此，从半导体本体流到阴极的少数电荷载流子通过靠近栅电极的基极区的一部分直接流到源电极。 因此避免了寄生双极晶体管的激活，从而避免了所谓的第二击穿的发生。

    Compensation semiconductor component and method of fabricating the semiconductor component
    69.
    发明授权
    Compensation semiconductor component and method of fabricating the semiconductor component 有权

    公开(公告)号：US06614090B2

    公开(公告)日：2003-09-02

    申请号：US09974650

    申请日：2001-10-09

    申请人： Gerald Deboy ,  Helmut Strack

    发明人： Gerald Deboy ,  Helmut Strack

    IPC分类号： H01L2358

    CPC分类号： H01L29/7811 ,  H01L29/0634 ,  H01L29/66712 ,  H01L29/7802 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor component is a charge carrier compensation component formed in a semiconductor body. A semiconductor basic body is disposed in the semiconductor body. The basic body has at least one compensation layer which adjoins a boundary layer and first regions of a first conductivity type and second regions of a second conductivity type are provided along a layout grid. A total quantity of charge of the first regions corresponds approximately to a total quantity of charge of the second regions. At least one semiconductor layer in the semiconductor body adjoins the semiconductor basic body at the boundary layer. A multiplicity of doped regions are embedded in the first surface of the semiconductor layer which form a grid for a cell array of the semiconductor component. The grid in the semiconductor layer is aligned independently of the layout grid in the semiconductor basic body.

    Semiconductor component with contact hole
    70.
    发明授权
    Semiconductor component with contact hole 失效
    半导体元件带接触孔

    公开(公告)号：US4903112A

    公开(公告)日：1990-02-20

    申请号：US212365

    申请日：1988-06-22

    申请人： Helmut Strack ,  Gottfried Schuh

    发明人： Helmut Strack ,  Gottfried Schuh

    IPC分类号： H01L29/78 ,  H01L21/285 ,  H01L21/331 ,  H01L21/336 ,  H01L23/485 ,  H01L29/08 ,  H01L29/41 ,  H01L29/73

    CPC分类号： H01L29/0847 ,  H01L21/28531 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S257/914

    摘要： A semiconductor component. The semiconductor component has two superimposed semiconductor layers of different conduction materials. An upper layer is provided with an opening through which a lower layer is exposed. A space saving scheme for connecting electrically the two layers is provided, by depositing a connecting layer which contacts the upper layer at an edge only and the lower layer is contacted at its depth where its doping material maximum is located. This requires a doping equal to or greater than 10.sup.19 cm.sup.-3 for the upper layer, which is dependent on thickness.

    摘要翻译： 半导体元件。 半导体元件具有不同导电材料的两个重叠的半导体层。 上层设置有暴露下层的开口。 通过沉积仅在边缘处接触上层的连接层，并且下层在其最大掺杂材料所在的深度处接触来提供用于连接两层电气的节省空间的方案。 对于上层，这需要等于或大于1019cm-3的掺杂，其取决于厚度。