公开(公告)号：US20190157073A1

公开(公告)日：2019-05-23

申请号：US16124063

申请日：2018-09-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hui WENG ,  Cheng-Han WU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN ,  Siao-Shan WANG

IPC: H01L21/027 ,  H01L21/308 ,  G03F7/20

Abstract: Methods for forming a semiconductor structure including using a photoresist material are provided. The method for forming a semiconductor structure includes forming a material layer over a substrate and forming a photoresist layer over the material layer. The method for forming a semiconductor structure further includes performing an exposure process on the photoresist layer and developing the photoresist layer. In addition, the photoresist layer is made of a photoresist material comprising a photosensitive polymer, and the photosensitive polymer has a first photosensitive functional group bonding to a main chain of the photosensitive polymer and a first acid labile group bonding to the first photosensitive functional group.

公开(公告)号：US20190146342A1

公开(公告)日：2019-05-16

申请号：US15994615

申请日：2018-05-31

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren ZI ,  Chin-Hsiang LIN ,  Ching-Yu CHANG ,  Joy CHENG

IPC: G03F7/038 ,  G03F7/38 ,  H01L21/027 ,  G03F7/20

Abstract: A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate, and selectively exposing the photoresist layer to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the protective layer is removed. The protective layer includes a polymer having fluorocarbon pendant groups.

公开(公告)号：US20190080901A1

公开(公告)日：2019-03-14

申请号：US15906187

申请日：2018-02-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Han KO ,  Joy CHENG ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/266 ,  G03F7/38 ,  G03F7/20 ,  G03F7/40 ,  G03F7/09 ,  G03F7/039 ,  G03F7/038

Abstract: A method for performing a photolithography process is provided. The method includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed region and an unexposed region by performing an exposure process. The method includes performing a baking process on the resist layer, so that voids are formed in the exposed region of the resist layer. The method also includes removing the unexposed region of the resist layer to form a recess in the resist layer and filling a post treatment coating material in the recess and the void. The method further includes removing a portion of the post treatment coating material by performing a second develop process, and another portion of the post treatment coating material is left on surfaces of the exposed region of the resist layer to form a patterned resist layer.

公开(公告)号：US20180174837A1

公开(公告)日：2018-06-21

申请号：US15380911

申请日：2016-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Han LAI ,  Chien-Wei WANG ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  G03F7/16 ,  G03F7/11 ,  G03F7/20

CPC classification number: H01L21/0332 ,  G03F7/11 ,  G03F7/162 ,  G03F7/2004 ,  H01L21/02115 ,  H01L21/02282 ,  H01L21/0274 ,  H01L21/0337

Abstract: Provided is a material composition and method for substrate modification. A substrate is patterned to include a plurality of features. The plurality of features includes a first subset of features having one or more substantially inert surfaces. In various embodiments, a priming material is deposited over the substrate, over the plurality of features, and over the one or more substantially inert surfaces. By way of example, the deposited priming material bonds at least to the one or more substantially inert surfaces. Additionally, the deposited priming material provides a modified substrate surface. After depositing the priming material, a layer is spin-coated over the modified substrate surface, where the spin-coated layer is substantially planar.

公开(公告)号：US20180173092A1

公开(公告)日：2018-06-21

申请号：US15381033

申请日：2016-12-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Yue LIN ,  Hsuan-Chen CHEN ,  Chih-Cheng LIN ,  Hsin-Chang LEE ,  Yao-Ching KU ,  Wei-Jen LO ,  Anthony YEN ,  Chin-Hsiang LIN ,  Mark CHIEN

IPC: G03F1/62 ,  G03F1/22

CPC classification number: G03F1/62 ,  G03F1/24

Abstract: A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.

公开(公告)号：US20240329535A1

公开(公告)日：2024-10-03

申请号：US18361298

申请日：2023-07-28

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Yu KUO ,  An-Ren ZI ,  Chen-Yu LIU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/09 ,  C09D125/06 ,  C09D133/12 ,  G03F7/004 ,  H01L21/033

CPC classification number: G03F7/091 ,  C09D125/06 ,  C09D133/12 ,  G03F7/0044 ,  H01L21/033

Abstract: A method of forming semiconductor device includes depositing a coating layer over a substrate, forming a photoresist layer over the coating layer, exposing the photoresist layer to actinic radiation, and developing the photoresist layer to form a patterned photoresist layer. The coating layer includes a polymer containing a first unit having a pendant hydrogen donor group capable of producing a hydrogen radical upon exposure to the actinic radiation or heat, and a second unit having a pendant water donor group capable of producing water upon exposure to the actinic radiation or heat.

公开(公告)号：US20230056958A1

公开(公告)日：2023-02-23

申请号：US17584173

申请日：2022-01-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Yang LIN ,  Chen-Yu LIU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/40 ,  G03F7/004 ,  H01L21/027

Abstract: Novel photoresist developing compositions including a deprotonation agent, such as a nitrogen containing organic base capable of deprotonating a surface of portions of a photoresist layer exposed to radiation.

公开(公告)号：US20220334482A1

公开(公告)日：2022-10-20

申请号：US17231946

申请日：2021-04-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tzu-Yang LIN ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/11 ,  G03F7/09 ,  H01L21/027

Abstract: A patterning stack is provided. The patterning stack includes a bottom anti-reflective coating (BARC) layer over a substrate, a photoresist layer having a first etching resistance over the BARC layer, and a top coating layer having a second etching resistance greater than the first etching resistance over the photoresist layer. The top coating layer includes a polymer having a polymer backbone including at least one functional unit of high etching resistance and one or more acid labile groups attached to the polymer backbone or a silicon cage compound.

公开(公告)号：US20220308452A1

公开(公告)日：2022-09-29

申请号：US17214660

申请日：2021-03-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ya-Ching CHANG ,  Chen-Yu LIU ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/16 ,  H01L21/67

Abstract: In a method, a resist material is dispensed through a tube of a nozzle of a resist pump system on a wafer. The tube extends from a top to a bottom of the nozzle and has upper, lower, and middle segments. When not dispensing, the resist material is retracted from the lower and the middle segments, and maintained in the upper segment of the tube. When retracting, a first solvent is flown through a tip of the nozzle at the bottom of the nozzle to fill the lower segment of the tube with the first solvent and to produce a gap in the middle segment of the tube between the resist material and the first solvent. The middle segment includes resist material residues on an inner surface wall of the tube and vapor of the first solvent. The vapor of the first solvent prevents the resist material residues from drying.

公开(公告)号：US20210384322A1

公开(公告)日：2021-12-09

申请号：US17408985

申请日：2021-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Hsiang LIN ,  Teng-Chun TSAI ,  Huang-Lin CHAO ,  Akira MINEJI

IPC: H01L29/66 ,  H01L29/45 ,  H01L29/49 ,  H01L21/311 ,  H01L21/321 ,  H01L29/78

Abstract: The present disclosure describes a method for forming a hard mask on a transistor's gate structure that minimizes gate spacer loss and gate height loss during the formation of self-aligned contact openings. The method includes forming spacers on sidewalls of spaced apart gate structures and disposing a dielectric layer between the gate structures. The method also includes etching top surfaces of the gate structures and top surfaces of the spacers with respect to a top surface of the dielectric layer. Additionally, the method includes depositing a hard mask layer having a metal containing dielectric layer over the etched top surfaces of the gate structures and the spacers and etching the dielectric layer with an etching chemistry to form contact openings between the spacers, where the hard mask layer has a lower etch rate than the spacers when exposed to the etching chemistry.