CIRCUIT BOARD STRUCTURE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240237209A9

    公开(公告)日:2024-07-11

    申请号:US17986899

    申请日:2022-11-15

    Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a plurality of pads, a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A plurality of first openings of the first dielectric layer expose part of the pads, and a first surface of the first dielectric layer is higher upper surfaces of the pads. The solder balls are disposed in a plurality of third openings of the third dielectric layer and are electrically connected to the second metal layer and the carrier. The surface treatment layer is disposed on the upper surfaces, and a top surface of the surface treatment layer is higher than the first surface.

    CIRCUIT BOARD STRUCTURE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240138063A1

    公开(公告)日:2024-04-25

    申请号:US17986899

    申请日:2022-11-15

    Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a plurality of pads, a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A plurality of first openings of the first dielectric layer expose part of the pads, and a first surface of the first dielectric layer is higher upper surfaces of the pads. The solder balls are disposed in a plurality of third openings of the third dielectric layer and are electrically connected to the second metal layer and the carrier. The surface treatment layer is disposed on the upper surfaces, and a top surface of the surface treatment layer is higher than the first surface.

    CIRCUIT BOARD STRUCTURE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20240138059A1

    公开(公告)日:2024-04-25

    申请号:US17992933

    申请日:2022-11-23

    CPC classification number: H05K1/0298 H05K1/11 H05K3/4644 H05K2203/041

    Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a first dielectric layer, pads, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A top surface of the first dielectric layer is higher than an upper surface of each pad. The first metal layer is disposed on a first surface of the first dielectric layer. The second dielectric layer has second openings exposing part of the first metal layer. The second metal layer extends into the second openings and is electrically connected to the first metal layer. The third dielectric layer has third openings exposing part of the second metal layer. The surface treatment layer is disposed on the upper surfaces.

    VAPOR CHAMBER STRUCTURE
    67.
    发明申请

    公开(公告)号:US20230067112A1

    公开(公告)日:2023-03-02

    申请号:US17983396

    申请日:2022-11-09

    Abstract: A vapor chamber structure includes a thermally conductive shell, a capillary structure layer, and a working fluid. The thermally conductive shell includes a first thermally conductive portion and a second thermally conductive portion. The first thermally conductive portion and the second thermally conductive portion are a thermally conductive plate that is integrally formed, and the thermally conductive shell is formed by folding the thermally conductive plate in half and then sealing the thermally conductive plate. The first thermally conductive portion has at least one first cavity, the second thermally conductive portion has at least one second cavity. At least one sealed chamber is defined between the thermally conductive plate, the first cavity and the second cavity. A pressure in the sealed chamber is lower than a standard atmospheric pressure. The capillary structure layer covers an inner wall of the sealed chamber. The working fluid is filled in the sealed chamber.

    Chip package structure and manufacturing method thereof

    公开(公告)号:US11476234B2

    公开(公告)日:2022-10-18

    申请号:US16846429

    申请日:2020-04-13

    Abstract: A manufacturing method of chip package structure includes following steps. A carrier is provided. A first patterned circuit layer and a first dielectric layer covering the first patterned circuit layer have been formed on the carrier. A flat structure layer is formed on the first dielectric layer. A second dielectric layer is formed on the first dielectric layer and covers the flat structure layer and a portion of the first dielectric layer. A second patterned circuit layer is formed on the second dielectric layer. The second patterned circuit layer includes a plurality of pads. An orthographic projection of the flat structure layer on the carrier overlaps orthographic projections of the pads on the carrier. A plurality of chips are disposed on the pads. A molding compound is formed to cover the second dielectric layer and encapsulate the chips and the pads.

    Vapor chamber device and manufacturing method thereof

    公开(公告)号:US11460255B2

    公开(公告)日:2022-10-04

    申请号:US17113332

    申请日:2020-12-07

    Abstract: A vapor chamber device and a manufacturing method are disclosed. The vapor chamber has a housing and multiple independent chambers. The housing includes two shells opposite to each other. The independent chambers are formed between the two shells. Each independent chamber contains a working fluid and has at least one diversion bump and a capillary structure. The diversion bump is formed on an inner surface of the second shell, and the capillary structure is mounted on the diversion bump. When the vapor chamber device is vertically mounted to a heat source, the independent chambers at an upper portion of the vapor chamber device still contain the working fluid. The working fluid in the independent chambers may not all flow to a bottom of the vapor chamber device. Therefore, a contact area between the working fluid and the heat source is increased and heat dissipation efficiency is improved.

    CIRCUIT BOARD STRUCTURE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220256717A1

    公开(公告)日:2022-08-11

    申请号:US17234805

    申请日:2021-04-20

    Abstract: A circuit board structure includes a first sub-board including a plurality of circuit patterns, a second sub-board including a plurality of pads, and a connecting structure layer having a plurality of through holes and including an insulating layer, first and second adhesive layers, and a plurality of conductive blocks. The first adhesive layer is directly connected to the first sub-board. The second adhesive layer is directly connected to the second sub-board. The through holes penetrate through the first adhesive layer, the insulating layer, and the second adhesive layer. The conductive blocks are located in the through holes. An upper surface and a lower surface of each conductive block are respectively lower than a first surface of the first adhesive layer and a second surface of the second adhesive layer relatively away from the insulating layer. Each circuit pattern contacts the upper surface, and each pad contacts the lower surface.

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