DISPERSION COMPENSATION METHOD AND FIBER TRANSMISSION SYSTEM
    61.
    发明申请
    DISPERSION COMPENSATION METHOD AND FIBER TRANSMISSION SYSTEM 审中-公开
    分散补偿方法和光纤传输系统

    公开(公告)号:US20090175629A1

    公开(公告)日:2009-07-09

    申请号:US12403865

    申请日:2009-03-13

    CPC分类号: H04B10/25137 H04B10/25133

    摘要: A dispersion compensation method and a fiber transmission system are disclosed, pertaining to the field of fiber communications. The dispersion compensation method includes: after performing electrical pre-compensation processing on a digital transmit signal, the transmitting end controls the electrical/optical converting module to output a distorted optical signal; after receiving the optical signal, the receiving end performs post-compensation processing after converting the optical signal into an electrical signal, or converts the optical signal into an electrical signal after performing post-compensation processing on the optical signal. The fiber transmission system includes: a pre-compensation signal processing module, an optical source, an electrical/optical converting module, a fiber transmission line, an optical/electrical converting module, and a post-compensation processing module. With the technical solution of the present disclosure, the non-linear effect may be suppressed, and a flexible dispersion compensation solution may be provided for a dynamically configurable network.

    摘要翻译: 公开了涉及光纤通信领域的色散补偿方法和光纤传输系统。 色散补偿方法包括:在对数字发送信号进行电预处理处理之后,发送端控制电/光转换模块输出失真的光信号; 在接收到光信号之后,接收端在将光信号转换成电信号之后执行后补偿处理,或者在对光信号执行后补偿处理之后将光信号转换为电信号。 光纤传输系统包括:预补偿信号处理模块,光源,电/光转换模块,光纤传输线,光/电转换模块和后补偿处理模块。 利用本公开的技术方案,可以抑制非线性效应,并且可以为可动态配置的网络提供灵活的色散补偿解决方案。

    Aggregating data from difference sources
    62.
    发明授权
    Aggregating data from difference sources 有权
    汇总不同来源的资料

    公开(公告)号:US07509477B2

    公开(公告)日:2009-03-24

    申请号:US11401887

    申请日:2006-04-12

    IPC分类号: G06F12/00

    摘要: A method and system that aggregates data associated with one or more entities from different data sources are provided. The data sources include documents, web pages, or images that have information about one or more entities. The information is extracted from the data sources based on criteria that define the entities. The extracted information is utilized to generate a hash identifier that corresponds to each entity and one or more storage locations. The one or more storage locations and associated hash identifiers are utilized to store the extracted information corresponding to the entities, and the extracted information for each entity is structured as a virtual page that is stored in an index having references to the data sources.

    摘要翻译: 提供了一种聚合与来自不同数据源的一个或多个实体相关联的数据的方法和系统。 数据源包括具有关于一个或多个实体的信息的文档,网页或图像。 基于定义实体的标准,从数据源中提取信息。 所提取的信息用于生成对应于每个实体和一个或多个存储位置的散列标识符。 一个或多个存储位置和相关联的散列标识符用于存储与实体相对应的提取的信息,并且提取的每个实体的信息被构造为存储在具有对数据源的引用的索引中的虚拟页面。

    Methods of fabricating integrated optoelectronic devices
    63.
    发明授权
    Methods of fabricating integrated optoelectronic devices 有权
    集成光电子器件的制造方法

    公开(公告)号:US07306959B2

    公开(公告)日:2007-12-11

    申请号:US11022364

    申请日:2004-12-22

    申请人: Yue Liu

    发明人: Yue Liu

    IPC分类号: H01L21/00

    摘要: This disclosure concerns methods for fabrication of integrated high speed optoelectronic devices. In one example of such a method, a device region that includes a top surface and a bottom surface is formed on a top surface of a substrate. The device region may take the form of an optical emitter, such as a VCSEL, or a detector, such as a photodiode. Next, an isolation region is formed that is configured such that the device region is surrounded by the isolation region. A superstrate is then disposed on the top surface of the device region. Finally, a micro-optical device, such as a lens, is placed on a top surface of the superstrate.

    摘要翻译: 本公开涉及用于制造集成高速光电子器件的方法。 在这种方法的一个实例中,包括顶表面和底表面的器件区域形成在衬底的顶表面上。 器件区域可以采取诸如VCSEL的光发射器或诸如光电二极管的检测器的形式。 接下来,形成隔离区域,其被配置为使得器件区域被隔离区域包围。 然后在装置区域的顶表面上设置覆盖层。 最后,诸如透镜的微光学装置被放置在顶板的顶表面上。

    Protective side wall passivation for VCSEL chips
    65.
    发明授权
    Protective side wall passivation for VCSEL chips 失效
    VCSEL芯片的保护侧壁钝化

    公开(公告)号:US06924161B2

    公开(公告)日:2005-08-02

    申请号:US10427237

    申请日:2003-05-01

    IPC分类号: H01L29/06 H01S5/183 H01L21/00

    摘要: Methods for sealing or passivating the edges of chips such as vertical cavity surface emitting lasers (VCSEL) is disclosed. One method includes oxidizing the edges of die at the wafer level prior to cutting the wafer into a plurality of die. This may be accomplished by etching a channel along the streets between die, followed by oxidizing the channel walls. The oxidation preferably oxidizes the aluminum bearing layers that are exposed by the channel walls inward for distance. Aluminum bearing layers, including AlAs and AlGaAs, may be oxidized to a stable native oxide that is resistant to further oxidation by the environment. After oxidation, the wafer can be cut along the channels into a number of die, each having a protective oxide layer on the side surfaces.

    摘要翻译: 公开了用于密封或钝化诸如垂直腔表面发射激光器(VCSEL)的芯片的边缘的方法。 一种方法包括在将晶片切割成多个管芯之前,在晶片级处氧化管芯的边缘。 这可以通过沿模具之间的街道蚀刻通道,然后氧化通道壁来实现。 氧化优选氧化由通道壁向内暴露的距离的含铝层。 包括AlAs和AlGaAs的铝轴承层可以被氧化成稳定的天然氧化物,其耐受环境的进一步氧化。 氧化后,可以将晶片沿着通道切割成多个模具,每个模具在侧表面上具有保护性氧化物层。

    Integration of top-emitting and top-illuminated optoelectronic devices with micro-optic and electronic integrated circuits
    66.
    发明授权
    Integration of top-emitting and top-illuminated optoelectronic devices with micro-optic and electronic integrated circuits 失效
    顶部发光和顶部照明光电子器件与微光学和电子集成电路的集成

    公开(公告)号:US06780661B1

    公开(公告)日:2004-08-24

    申请号:US09547538

    申请日:2000-04-12

    申请人: Yue Liu

    发明人: Yue Liu

    IPC分类号: H01L2100

    摘要: An opto-electronic integrated circuit device includes top emitter/detector devices on a substrate. The top emitter/detector devices have top and bottom sides. The top emitter/detector devices are capable of emitting and detecting light beam from the top side, and have top contact pads on the top side. An optically transparent superstrate is attached to the top side. Micro-optic devices such as lenses can be attached to the superstrate. Top contact pads are connected to bottom contact pads. The bottom contact pads are attached to matching pads of an integrated circuit chip to produce an opto-electronic integrated circuit.

    摘要翻译: 光电集成电路器件包括衬底上的顶部发射器/检测器器件。 顶部发射器/检测器装置具有顶部和底部。 顶部发射器/检测器装置能够发射和检测来自顶侧的光束,并且在顶侧具有顶部接触焊盘。 光学透明的上层附着在顶面。 诸如透镜的微光学装置可以附着在上面。 顶部接触垫连接到底部接触垫。 底部接触焊盘连接到集成电路芯片的匹配焊盘以产生光电集成电路。

    Method for Producing High Stacking Fault Energy (SFE) Metal Films, Foils, and Coatings with High-Density Nanoscale Twin Boundaries
    69.
    发明申请
    Method for Producing High Stacking Fault Energy (SFE) Metal Films, Foils, and Coatings with High-Density Nanoscale Twin Boundaries 有权
    高密度纳米尺度双边界产生高堆叠断层能量(SFE)金属膜,箔片和涂层的方法

    公开(公告)号:US20150233019A1

    公开(公告)日:2015-08-20

    申请号:US14428538

    申请日:2013-09-17

    IPC分类号: C30B29/68 C30B29/02

    摘要: Materials, including metals such as bulk metals, specialty alloys, metallic films and coatings, are made up of many tiny single crystals, which may also be referred to as grains. The boundaries between crystals are called grain boundaries and govern properties such as mechanical strength, deformation, and electrical resistivity. These properties are affected by not only the number of grain boundaries formed, but also the density and orientation of those grain boundaries. Twin boundaries are a special type of grain boundary which have symmetrical “mirror image” structures and preserve favorable qualities of grain boundaries while suppressing unfavorable properties such as the initiation of cracks, inclusions, and other unwanted flaws. Some metals and alloys form twins more easily than others during processing. Metals with low stacking fault energy (SFE) such as austenitic stainless steel, copper (Cu), and silver (Ag) form twin boundaries more easily than metals with high SFE such as Magnesium (Mg) and Aluminum (Al).

    摘要翻译: 包括诸如散装金属,特种合金,金属膜和涂层的金属的材料由许多微小的单晶组成,其也可以称为晶粒。 晶体之间的边界称为晶界和管理性质,如机械强度,变形和电阻率。 这些性质不仅受到形成的晶粒数量的影响,还受到这些晶界的密度和取向的影响。 双边界是具有对称“镜像”结构的特殊类型的晶界,并且在抑制裂纹,夹杂物等不希望的缺陷的不利特性的同时保持晶界的有利品质。 一些金属和合金在加工过程中比其他金属和合金更容易形成双胞胎。 具有低堆垛层错能量(SFE)的金属如奥氏体不锈钢,铜(Cu)和银(Ag)比具有高SFE的金属如镁(Mg)和铝(Al)更容易形成双边界。