公开(公告)号：US20140272112A1

公开(公告)日：2014-09-18

申请号：US14142121

申请日：2013-12-27

Applicant: Intermolecular, Inc.

Inventor： Jeroen Van Duren ,  Minh Huu Le ,  Minh Anh Nguyen ,  Sandeep Nijhawan

IPC: C23C14/08 ,  C23C14/22 ,  C23C14/34

CPC classification number: H01L21/30 ,  B01J19/0046 ,  B01J2219/00283 ,  B01J2219/00286 ,  B01J2219/00301 ,  B01J2219/00313 ,  B01J2219/0038 ,  B01J2219/00382 ,  B01J2219/00416 ,  B01J2219/00418 ,  B01J2219/00527 ,  B01J2219/00585 ,  B08B3/04 ,  C23C14/08 ,  C23C14/22 ,  C23C14/34 ,  C23C18/1619 ,  C23C18/1682 ,  C25D17/02 ,  G11C13/0004 ,  H01L21/02104 ,  H01L21/30604 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/6719 ,  H01L22/10 ,  H01L22/12 ,  H01L22/14 ,  H01L27/2463 ,  H01L45/1608

Abstract: Embodiments provided herein describe methods and systems for evaluating electrochromic material processing conditions. A substrate having a plurality of site-isolated regions defined thereon is provided. A first electrochromic material, or a first electrochromic device stack, is formed above a first of the plurality of site-isolated regions using a first set of processing conditions. A second electrochromic material, or a second electrochromic device stack, is formed above a second of the plurality of site-isolated regions using a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions.

Abstract translation: 本文提供的实施例描述了用于评估电致变色材料加工条件的方法和系统。 提供了具有限定在其上的多个位置隔离区域的基板。 使用第一组处理条件在多个位置隔离区域的第一个上方形成第一电致变色材料或第一电致变色器件堆叠。 使用第二组处理条件在多个位置隔离区域的第二个上方形成第二电致变色材料或第二电致变色器件堆叠。 第二组处理条件与第一组处理条件不同。

公开(公告)号：US20140120264A1

公开(公告)日：2014-05-01

申请号：US14128109

申请日：2012-06-07

Applicant: Yuichiro Inatomi ,  Takashi Tanaka ,  Osamu Kuroda ,  Mitsuaki Iwashita ,  Yusuke Saito

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Osamu Kuroda ,  Mitsuaki Iwashita ,  Yusuke Saito

IPC: B05C11/10

CPC classification number: B05C11/1039 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/165 ,  C23C18/168 ,  C23C18/1682 ,  C23C18/1683 ,  C23C18/32

Abstract: A plating apparatus 20 has a substrate holding/rotating device 110 configured to hold and rotate a substrate 2 and a plating liquid supplying device 30 configured to supply a plating liquid 35 onto the substrate 2. The plating liquid supplying device 30 has a supply tank 31 configured to store therein the plating liquid 35 to be supplied onto the substrate 2, a discharge nozzle 32 configured to discharge the plating liquid 35 onto the substrate 2 and a plating liquid supplying line 33 through which the plating liquid 35 within the supply tank 31 is supplied into the discharge nozzle 32. Further, an ammonia gas storage unit 170 is connected to the supply tank 31, and a concentration of an ammonia component within the plating liquid 35 stored in the supply tank 31 can be maintained within a preset target range.

Abstract translation: 电镀装置20具有：基板保持旋转装置110，被配置为保持和旋转基板2;以及电镀液供给装置30，其被配置为将电镀液体35供给到基板2上。电镀液供给装置30具有供给槽31 被配置为在其中存储供给到基板2上的镀液35，将镀液33排出到基板2上的排出喷嘴32和供给槽31内的镀液35通过该电镀液供给路33 供给到排出喷嘴32.此外，氨气体收容部170与供给罐31连接，能够将储存在供给槽31内的镀液35内的氨成分浓度维持在预先设定的目标范围内。

公开(公告)号：US08128987B2

公开(公告)日：2012-03-06

申请号：US11138531

申请日：2005-05-26

Applicant: Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

Inventor： Igor C. Ivanov ,  Jonathan Weiguo Zhang ,  Artur Kolics

IPC: C23C18/16

CPC classification number: C23C18/1676 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/168 ,  C23C18/1682 ,  H01L21/288

Abstract: A method for electroless deposition from a deposition solution in a working chamber, where the process can include heating the deposition solution to its boiling point and subsequently reducing the temperature of the deposition solution to a working temperature range that is between approximately 1% and approximately 25% below the boiling point of said solution under a predetermined pressure; and the process also can include heating the deposition solution while filling an enclosed area of the chamber such that the deposition solution reaches its boiling point immediately after the enclosed area is filled.

Abstract translation: 一种用于从工作室中的沉积溶液进行无电沉积的方法，其中该方法可以包括将沉积溶液加热至其沸点，随后将沉积溶液的温度降低至大约1％至大约25之间的工作温度范围 低于所述溶液在预定压力下的沸点％; 并且该方法还可以包括在填充室的封闭区域期间加热沉积溶液，使得沉积溶液在填充封闭区域之后立即达到其沸点。

公开(公告)号：US20110293847A1

公开(公告)日：2011-12-01

申请号：US12789457

申请日：2010-05-28

Applicant: Jeffrey Todd Hastings

Inventor： Jeffrey Todd Hastings

IPC: C23F17/00 ,  C23C14/14 ,  C23C14/06

CPC classification number: G03F7/2043 ,  C23C18/1204 ,  C23C18/1208 ,  C23C18/1245 ,  C23C18/125 ,  C23C18/1275 ,  C23C18/14 ,  C23C18/1612 ,  C23C18/1619 ,  C23C18/1642 ,  C23C18/1667 ,  C23C18/1682 ,  C23C18/1687 ,  C23C18/31 ,  C23C18/32 ,  C23C18/42 ,  C23C18/48 ,  H01J37/3002 ,  H01J37/301 ,  H01J37/3056 ,  H01J2237/2003 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/288 ,  H01L21/30604 ,  H01L21/30612 ,  H01L21/31111 ,  H01L21/32134

Abstract: A system or method of charge particle beam induced materials processing is disclosed. A charged particle beam (electron or ion) is focused at the interface of a substrate and a bulk liquid. The beam induces a localized chemical reaction that results in deposition or etching of deterministic micro- or nano-scale structures. The bulk liquid reactants permit the deposition and etching of metals, semiconductors, and insulators. A charged particle transparent membrane separates the liquid reactant from the vacuum chamber in which the beam is transmitted. In many cases, bulk liquid reactants permit processing of materials with much higher purity that of the prior art and permit processing of materials previously unavailable in charged particle beam processes.

Abstract translation: 公开了一种充电粒子束诱导材料处理的系统或方法。 带电粒子束（电子或离子）聚焦在基底和大块液体的界面处。 光束引起局部化学反应，导致确定性微尺度或纳米尺度结构的沉积或蚀刻。 大量液体反应物允许金属，半导体和绝缘体的沉积和蚀刻。 带电粒子透明膜将液体反应物与其中传输光束的真空室分离。 在许多情况下，散装液体反应物允许加工具有现有技术的纯度高得多的材料，并允许加工先前在带电粒子束工艺中不可用的材料。

公开(公告)号：US07884033B2

公开(公告)日：2011-02-08

申请号：US12616367

申请日：2009-11-11

Applicant: Igor C. Ivanov

Inventor： Igor C. Ivanov

IPC: H01L21/31 ,  H05K7/00 ,  B05B7/06 ,  B05D3/12 ,  B65H1/00

CPC classification number: H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

Abstract: An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound.

Abstract translation: 提供了一种用于处理微电子拓扑的装置，这种装置的使用方法以及用于钝化微电子处理室的硬件的方法。 该装置包括：衬底保持器，其构造成支撑微电子形貌;以及旋转壳体，其具有布置在衬底保持器的相对侧上的侧壁。 使用这种装置的方法包括将微电子形貌定位在处理室的衬底保持器上，将微电子拓扑暴露于处理室内的流体，以及旋转处理室的壳体。 旋转足以影响流体相对于微电子拓扑的表面的运动。 用于钝化微电子处理室的硬件的方法包括将硬件暴露于有机化合物，随后将硬件暴露于配置为与有机化合物形成极性键的试剂。

公开(公告)号：US20100279002A1

公开(公告)日：2010-11-04

申请号：US12838643

申请日：2010-07-19

Applicant: Igor C. Ivanov

Inventor： Igor C. Ivanov

IPC: H05K3/00 ,  B05D1/02 ,  B05D5/00 ,  B05D3/04 ,  B05B15/00

CPC classification number: H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

Abstract: A method is provided which includes dispensing a deposition solution at a plurality of locations extending different distances from a center of a microelectronic topography each at different moments in time during an electroless plating process. An electroless plating apparatus used for the method includes a substrate holder, a moveable dispense arm, and a storage medium comprising program instructions executable by a processor for positioning the moveable dispense arm. Another method and accompanying electroless deposition chamber are configured to introduce a gas into an electroless plating chamber above a plate which is suspended above a microelectronic topography and distribute the gas to regions extending above one or more discrete portions of the microelectronic topography. An exemplary microelectronic topography resulting from the aforementioned methods and apparatuses includes a layer having distinct regions each including a comparatively different thickness and comparatively different concentrations of one of the one or more elements.

Abstract translation: 提供了一种方法，其包括在化学镀处理期间在不同时刻在微电子拓扑的中心延伸不同距离的多个位置分配沉积溶液。 用于该方法的无电电镀装置包括基板保持件，可移动分配臂和存储介质，该存储介质包括可由处理器执行的用于定位可移动分配臂的程序指令。 另一种方法和伴随的无电镀沉积室被配置成将气体引入位于微电子拓扑上方的板上方的化学镀室中，并将气体分布到在微电子拓扑的一个或多个离散部分上方延伸的区域。 由上述方法和装置产生的示例性微电子拓扑包括具有不同区域的层，每个区域包括相对不同的厚度和相对不同浓度的一种或多种元素之一。

公开(公告)号：US07779782B2

公开(公告)日：2010-08-24

申请号：US11200324

申请日：2005-08-09

Applicant: Igor C. Ivanov

Inventor： Igor C. Ivanov

IPC: B05C11/00 ,  B05B3/00

CPC classification number: H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

Abstract: A method is provided which includes dispensing a deposition solution at a plurality of locations extending different distances from a center of a microelectronic topography each at different moments in time during an electroless plating process. An electroless plating apparatus used for the method includes a substrate holder, a moveable dispense arm, and a storage medium comprising program instructions executable by a processor for positioning the moveable dispense arm. Another method and accompanying electroless deposition chamber are configured to introduce a gas into an electroless plating chamber above a plate which is suspended above a microelectronic topography and distribute the gas to regions extending above one or more discrete portions of the microelectronic topography. An exemplary microelectronic topography resulting from the aforementioned methods and apparatuses includes a layer having distinct regions each including a comparatively different thickness and comparatively different concentrations of one of the one or more elements.

Abstract translation: 提供了一种方法，其包括在化学镀处理期间在不同时刻在微电子拓扑的中心延伸不同距离的多个位置分配沉积溶液。 用于该方法的无电电镀装置包括基板保持件，可移动分配臂和存储介质，该存储介质包括可由处理器执行的用于定位可移动分配臂的程序指令。 另一种方法和伴随的无电镀沉积室被配置成将气体引入位于微电子拓扑上方的板上方的化学镀室中，并将气体分布到在微电子拓扑的一个或多个离散部分上方延伸的区域。 由上述方法和装置产生的示例性微电子拓扑包括具有不同区域的层，每个区域包括相对不同的厚度和相对不同浓度的一种或多种元素之一。

公开(公告)号：US07714441B2

公开(公告)日：2010-05-11

申请号：US11199621

申请日：2005-08-09

Applicant: Igor C. Ivanov

Inventor： Igor C. Ivanov

IPC: H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC classification number: H01L21/76841 ,  B82Y30/00 ,  C23C18/1619 ,  C23C18/1651 ,  C23C18/1682 ,  C23C18/1683 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D21/10 ,  H01L21/288 ,  H01L21/6715 ,  H01L21/76801 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76858 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/12 ,  Y10T428/12458 ,  Y10T428/24479 ,  Y10T428/24612 ,  H01L2924/00

Abstract: A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL.

Abstract translation: 微电子拓扑结构包括具有高于相邻体金属特征（BMF）的表面的介电层（DL），并且还包括在BMF上的延伸高于DL的阻挡层（BL）。 另一微电子拓扑包括具有金属元素浓度的金属氧化物层的BL，其相对于在金属氧化物层的任一侧上的金属合金层内的元素的浓度是不成比例的。 一种方法包括在BMF上形成BL，使得与BMF相邻的第一DL的部分被暴露，在BL上选择性地沉积第二DL，然后清洁其形貌，以及在清洁的形貌上覆盖沉积第三DL。 另一种方法包括抛光微电子拓扑，使得金属化层与DL共面，并且还包括在抛光的形貌上喷射去离子水基流体以从DL去除碎屑。

公开(公告)号：US20090288593A1

公开(公告)日：2009-11-26

申请号：US11537643

申请日：2006-09-30

Applicant: Ron Rulkens ,  Robert D. Tas ,  Shashank Ravindra Kulkarni ,  Artur Kolics ,  Nancy E. Gilbert

Inventor： Ron Rulkens ,  Robert D. Tas ,  Shashank Ravindra Kulkarni ,  Artur Kolics ,  Nancy E. Gilbert

IPC: B05C3/02

CPC classification number: C23C18/1682 ,  C23C18/1617 ,  C23C18/1619 ,  H05K3/187

Abstract: An electroless deposition system includes a deposition solution, and saturating the deposition solution with an oxygen concentration in a range from about two thousand parts per million to about twenty thousand parts per million.

Abstract translation: 无电解沉积系统包括沉积溶液，并使沉积溶液饱和，氧浓度在约百万分之几到百万分之一的范围内。

公开(公告)号：US07465358B2

公开(公告)日：2008-12-16

申请号：US10794592

申请日：2004-03-05

Applicant: Timothy W. Weidman ,  Dmitry Lubomirsky

Inventor： Timothy W. Weidman ,  Dmitry Lubomirsky

IPC: B05C11/00

CPC classification number: H01L21/76838 ,  C23C18/1601 ,  C23C18/1619 ,  C23C18/1628 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/1872 ,  C23C18/28 ,  H01L21/288 ,  Y10S134/902

Abstract: Embodiments of the invention generally provide a fluid processing chamber, sensors and a controller and method for using the same. The fluid processing chamber includes an inlet region, a processing region and an outlet region. The inlet region generally contains one or more sensors and an external controller to monitor the characteristics of the processing fluid at the inlet to the processing region. The outlet region generally contains one or more sensors and an external controller to monitor the characteristics of the processing fluid leaving the processing region of the chamber. In one embodiment the processing region contains one or more sensors and an external controller to monitor the characteristics of the processing fluid in the processing region. The sensors may include, for example, an ORP probe, a temperature sensor, a conductivity sensor, a dissolved hydrogen sensor, a dissolved oxygen sensor, and a pH sensor. The fluid processing chamber is generally useful for all process steps done to deposit an electroless deposited film on a substrate including, for example, all pre-clean process steps (substrate preparation steps), all electroless activation process steps, all electroless deposition steps, and all post electroless deposition cleaning steps.

Abstract translation: 本发明的实施例通常提供流体处理室，传感器以及使用该流体处理室的控制器和方法。 流体处理室包括入口区域，处理区域和出口区域。 入口区域通常包含一个或多个传感器和外部控制器，以监控处理区域入口处的处理流体的特性。 出口区域通常包含一个或多个传感器和外部控制器，以监测离开室的处理区域的处理流体的特性。 在一个实施例中，处理区域包含一个或多个传感器和外部控制器，用于监视处理区域中处理流体的特性。 传感器可以包括例如ORP探针，温度传感器，电导率传感器，溶解氢传感器，溶解氧传感器和pH传感器。 流体处理室通常可用于在基底上沉积无电沉积膜的所有工艺步骤，包括例如所有预清洁工艺步骤（衬底制备步骤），所有无电解激活工艺步骤，所有无电沉积步骤和 所有后期无电沉积清洗步骤。