公开(公告)号：US20090223931A1

公开(公告)日：2009-09-10

申请号：US12396911

申请日：2009-03-03

Applicant: Shuji TAKAHASHI

Inventor： Shuji TAKAHASHI

IPC: B44C1/22 ,  C23F1/08

CPC classification number: H01J37/32706 ,  H01L41/332

Abstract: The dry etching method of performing etching, includes the steps of: supplying a processing gas which is a gas mixture of a plurality of fluorochemical gases; and generating plasma under a high vacuum while supplying the processing gas and applying a low-frequency bias voltage.

Abstract translation: 进行蚀刻的干蚀刻方法包括以下步骤：供给作为多种含氟气体的气体混合物的处理气体; 以及在高真空下产生等离子体，同时供应处理气体并施加低频偏置电压。

公开(公告)号：US20090194506A1

公开(公告)日：2009-08-06

申请号：US12420370

申请日：2009-04-08

Applicant: Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

Inventor： Hitoshi Tamura ,  Naoki Yasui ,  Seiichi Watanabe

IPC: B44C1/22

CPC classification number: H01L21/6833 ,  H01J37/32706

Abstract: The invention provides a plasma processing apparatus and a plasma processing method capable of controlling the voltage of the processing substrate with high accuracy, thereby enabling a highly accurate plasma processing. According to the invention, a voltage of the processing substrate is measured using a processing substrate with a voltage probe prepared in advance, and based on a bias voltage supplied to an electrostatic chuck mechanism and a bias current flowing through the electrostatic chuck mechanism, a capacity component which is an impedance representing the electric property of the electrostatic chuck mechanism is computed numerically. Then, based on a predetermined expression, the voltage of the processing substrate is estimated using the bias voltage of the processing substrate to be measured, the bias current flowing through the electrostatic chuck mechanism and the capacity component which is the impedance acquired in advance.

Abstract translation: 本发明提供一种能够高精度地控制处理基板的电压的等离子体处理装置和等离子体处理方法，能够进行高精度的等离子体处理。 根据本发明，使用具有预先制备的电压探针的处理基板来测量处理基板的电压，并且基于提供给静电卡盘机构的偏置电压和流过静电卡盘机构的偏置电流， 数字地计算作为表示静电卡盘机构的电特性的阻抗的分量。 然后，基于预定表达式，使用待测量的处理基板的偏置电压，流过静电卡盘机构的偏置电流和预先获取的阻抗的电容分量来估计处理基板的电压。

公开(公告)号：US20090130337A1

公开(公告)日：2009-05-21

申请号：US12199712

申请日：2008-08-27

Applicant: Stanford R. Ovshinsky

Inventor： Stanford R. Ovshinsky

IPC: H05H1/30 ,  H05H1/24 ,  C23C16/00 ,  C23C16/52

CPC classification number: C23C16/24 ,  C23C16/27 ,  C23C16/277 ,  C23C16/452 ,  C23C16/52 ,  C23C16/545 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32541 ,  H01J37/3266 ,  H01J37/32706

Abstract: A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes the in situ generation of a neutral-enriched deposition medium that is conducive to the formation of thin film materials having a low intrinsic defect concentration at any speed. In one embodiment, the deposition medium is created by forming a plasma from an energy transferring gas; combining the plasma with a precursor gas to form a set of activated species that include ions, ion-radicals, and neutrals; and selectively excluding the species that promote the formation of defects to form the deposition medium. In another embodiment, the deposition medium is created by mixing an energy transferring gas and a precursor gas, forming a plasma from the mixture to form a set of activated species, and selectively excluding the species that promote the formation of defects. The apparatus has a control for the entire manufacturing process that includes a diagnostic element and a feedback control element to permit process programming to achieve and maintain the optimal distribution of one or more preferred species throughout the deposition process.

公开(公告)号：US20090087585A1

公开(公告)日：2009-04-02

申请号：US11864100

申请日：2007-09-28

Applicant: WEI TI LEE ,  Yen-Chih Wang ,  Mohd Fadzli Anwar Hassan ,  Ryeun Kwan Kim ,  Hyung Chul Park ,  Ted Guo ,  Alan A. Ritchie

Inventor： WEI TI LEE ,  Yen-Chih Wang ,  Mohd Fadzli Anwar Hassan ,  Ryeun Kwan Kim ,  Hyung Chul Park ,  Ted Guo ,  Alan A. Ritchie

IPC: H05H1/24

CPC classification number: H01J37/34 ,  C23C14/0036 ,  C23C14/0089 ,  C23C14/0641 ,  H01J37/32449 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.

Abstract translation: 本文所述的实施例提供了一种通过不同PVD工艺形成两种氮化钛材料的方法，使得最初通过金属模式的PVD工艺形成金属氮化钛层，并且在金属钛的一部分上形成氮化钛延迟层 氮化物层通过PVD工艺处于毒液模式。 随后，通过CVD工艺可以在金属氮化钛层的暴露部分上选择性地沉积第一铝层，例如铝籽晶层。 此后，在铝PVD工艺期间，可以在第一铝层和氮化钛延迟层的暴露部分上沉积第二铝层，例如铝本体层。

公开(公告)号：US20090085172A1

公开(公告)日：2009-04-02

申请号：US12238692

申请日：2008-09-26

Applicant: Masahiro Horigome ,  Shigekazu Hirose

Inventor： Masahiro Horigome ,  Shigekazu Hirose

IPC: H01L21/4763 ,  C23C14/32 ,  H01L23/58 ,  G06F19/00

CPC classification number: C23C16/347 ,  C23C16/45565 ,  C23C16/511 ,  H01J37/32706 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/318 ,  H01L21/76807 ,  H01L21/76826 ,  H01L21/76834

Abstract: A deposition method includes steps of placing a substrate on a susceptor in a process chamber; supplying to the process chamber a source gas including an organic compound and a plasma gas for facilitating activation of the source gas into plasma; evacuating the process chamber to a reduced pressure; generating plasma of the plasma gas and the source gas in the process chamber to deposit a barrier film including carbon on the substrate; and applying high frequency bias electric power to the susceptor during the plasma generating step.

Abstract translation: 沉积方法包括将基板放置在处理室中的基座上的步骤; 向处理室供应包括有机化合物和等离子体气体的源气体，以促进源气体活化成等离子体; 将处理室排空至减压; 产生处理室中的等离子体气体和源气体的等离子体，以在衬底上沉积包含碳的阻挡膜; 以及在所述等离子体生成步骤期间向所述基座施加高频偏置电力。

公开(公告)号：US20080315127A1

公开(公告)日：2008-12-25

申请号：US11629690

申请日：2005-06-14

Applicant: Frank Torregrosa ,  Gilles Mathieu ,  Laurent Roux

Inventor： Frank Torregrosa ,  Gilles Mathieu ,  Laurent Roux

IPC: A61N5/00

CPC classification number: H01J37/32412 ,  C23C8/36 ,  C23C14/48 ,  H01J37/32706

Abstract: The present invention relates to an ion implanter IMP comprising a pulsed plasma source SPL, a substrate-carrier tray PPS, and a power supply ALT for the tray. The implanter also includes a capacitor C connected directly to ground E and connected downstream from the tray power supply ALT. The invention also provides a method of using the implanter.

Abstract translation: 本发明涉及一种离子注入机IMP，其包括脉冲等离子体源SPL，基板载体托盘PPS和用于托盘的电源ALT。 注入机还包括直接连接到地E并连接在托盘电源ALT下游的电容器C. 本发明还提供了一种使用注入机的方法。

公开(公告)号：US20080311758A1

公开(公告)日：2008-12-18

申请号：US11818621

申请日：2007-06-14

Applicant: Andrew D. Bailey ,  Yunsang Kim

Inventor： Andrew D. Bailey ,  Yunsang Kim

IPC: H01L21/302 ,  H01L21/306

CPC classification number: H01J37/32385 ,  H01J37/321 ,  H01J37/32366 ,  H01J37/32706 ,  H01L21/02087 ,  H01L21/67069 ,  H01L21/6715

Abstract: Apparatus and methods protect a central process exclusion region of a substrate during processing of an edge environ region of process performance. Removal of undesired materials is only from the edge environ region while the central device region is protected from damage. Field strengths are configured to protect the central region from charged particles from plasma in a process chamber and to foster removal of the undesired materials from only the edge environ region. A magnetic field is configured with a peak value adjacent to a border between the central and edge environ regions. A strong field gradient extends from the peak radially away from the border and away from the central region to repel the charged particles from the central region. The strength and location of the field are adjustable by axial relative movement of magnet sections, and flux plates are configured to redirect the field for desired protection.

Abstract translation: 装置和方法在处理工艺性能的边缘环境区域期间保护衬底的中心过程排除区域。 去除不需要的材料仅来自边缘环境区域，而中央设备区域被保护免受损坏。 场强被配置为保护中心区域免受处理室中的带电粒子等离子体的影响，并且仅促进从边缘环境区域移除不需要的材料。 磁场配置有与中央和边缘环境区域之间的边界相邻的峰值。 强场梯度从径向远离边界并远离中心区域从峰值延伸，以将带电粒子从中心区域排斥。 磁场的强度和位置可以通过磁体部分的轴向相对运动来调节，并且磁通板被配置为重定向磁场以达到期望的保护。

公开(公告)号：US20080173538A1

公开(公告)日：2008-07-24

申请号：US11655488

申请日：2007-01-19

Applicant: Sun-Oo Kim ,  Bum Ki Moon ,  Erdom Kaltalioglu

Inventor： Sun-Oo Kim ,  Bum Ki Moon ,  Erdom Kaltalioglu

IPC: C23C14/34

CPC classification number: H01J37/34 ,  H01J37/32082 ,  H01J37/32706

Abstract: A sputtering apparatus includes a target electrode and a bias source electrically coupled to the target electrode. A wafer chuck is spaced from the target electrode. The wafer chuck is partitioned into a plurality of zones, each zone being coupled to receive an AC signal having an amplitude that can vary by zone. At least one RF coil is positioned adjacent a space between the target electrode and the wafer chuck.

Abstract translation: 溅射装置包括目标电极和与靶电极电耦合的偏压源。 晶片卡盘与目标电极间隔开。 晶片卡盘被划分成多个区域，每个区域被耦合以接收具有可以随区域变化的幅度的AC信号。 至少一个RF线圈被定位成邻近目标电极和晶片卡盘之间的空间。

公开(公告)号：US07393433B2

公开(公告)日：2008-07-01

申请号：US11064817

申请日：2005-02-25

Applicant: Takamasa Tanikuni ,  Yasuhide Den

Inventor： Takamasa Tanikuni ,  Yasuhide Den

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683 ,  B23B5/22 ,  B25G3/22 ,  H01T23/00

CPC classification number: H01L21/67069 ,  C23C16/4586 ,  C23C16/507 ,  H01J37/32577 ,  H01J37/32706 ,  H01L21/6831 ,  Y10T279/23

Abstract: A wiring member which becomes substantially symmetrical on the plane of an electrostatic chuck unit is connected to the tip end of an RF introduction rod between the RF introduction rod and the electrostatic chuck unit in order to make uniform generation of an electric field due to bias RF which becomes a cause of plasma damage. The connection point between the electrostatic chuck unit and the wiring member may be single or plural.

Abstract translation: 在静电吸盘单元的平面上基本上对称的配线构件连接到RF引入杆和静电吸盘单元之间的RF引入杆的前端，以便均匀地产生由于偏置RF的电场 这成为等离子体损伤的原因。 静电吸盘单元和配线构件之间的连接点可以是单个或多个。

公开(公告)号：US20080142359A1

公开(公告)日：2008-06-19

申请号：US11933086

申请日：2007-10-31

Applicant: Praburam GOPALRAJA ,  Jianming FU ,  Xianmin TANG ,  John C. FORSTER ,  Umesh KELKAR

Inventor： Praburam GOPALRAJA ,  Jianming FU ,  Xianmin TANG ,  John C. FORSTER ,  Umesh KELKAR

IPC: C23C14/14

CPC classification number: C23C14/345 ,  C23C14/35 ,  H01J37/32706 ,  H01J37/3408 ,  H01J37/3455

Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

Abstract translation: 例如，用于溅射诸如钽和氮化钽的沉积材料的DC磁控溅射反应器及其使用的自离子等离子体（SIP）溅射和电容耦合等离子体（CCP）溅射的方法，其一起或交替地被促进 ，在同一个房间。 此外，可以通过电感耦合等离子体（ICP）再溅射来减薄或消除底部覆盖。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 CCP由将电能耦合到等离子体中的RF能量的基座电极提供。 CCP等离子体优选由围绕基座的电磁线圈产生的磁场增强，其作用是限制CCP等离子体并增加其密度。