公开(公告)号：US07816255B2

公开(公告)日：2010-10-19

申请号：US12112135

申请日：2008-04-30

申请人： Kyung-In Choi ,  Gil-Heyun Choi ,  Hyun-Bae Lee ,  Jong-Won Hong ,  Jong-Myeong Lee

发明人： Kyung-In Choi ,  Gil-Heyun Choi ,  Hyun-Bae Lee ,  Jong-Won Hong ,  Jong-Myeong Lee

IPC分类号： H01L21/4763 ,  H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76877 ,  H01L24/03 ,  H01L24/05 ,  H01L2224/03602 ,  H01L2224/05124 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/19043 ,  H01L2924/3011 ,  H01L2924/00014

摘要： Methods of forming a semiconductor device that includes a diffusion barrier film are provided. The diffusion barrier film includes a metal nitride formed by using a MOCVD process and partially treated with a plasma treatment. Thus, a specific resistance of the diffusion barrier film can be decreased, and the diffusion barrier film may have distinguished barrier characteristics.

摘要翻译： 提供了形成包括扩散阻挡膜的半导体器件的方法。 扩散阻挡膜包括通过使用MOCVD工艺形成并通过等离子体处理部分处理的金属氮化物。 因此，可以减小扩散阻挡膜的电阻率，并且扩散阻挡膜可能具有显着的屏障特性。

公开(公告)号：US20100193902A1

公开(公告)日：2010-08-05

申请号：US12502490

申请日：2009-07-14

申请人： Seung-woo SHIN ,  Byung-Iyul Park ,  Jong-myeong Lee ,  Gil-heyun Choi ,  Jong-ho Yun

发明人： Seung-woo SHIN ,  Byung-Iyul Park ,  Jong-myeong Lee ,  Gil-heyun Choi ,  Jong-ho Yun

IPC分类号： H01L23/525

CPC分类号： H01L23/5258 ,  H01L27/105 ,  H01L27/10894 ,  H01L27/10897 ,  H01L2924/0002 ,  H01L2924/00

摘要： Provided is a semiconductor device including a fuse, in which a insulating layer surrounding the fuse or metal wiring is prevented from being damaged due to the cut of a fuse, which can occur when a repair process is performed. The semiconductor device includes a conductive line formed on a semiconductor layer, a protective layer formed on the conductive line, one or more fuses that are electrically connected to the conductive line, and a fuse protective layer formed on the one or more fuses, and spaced apart from the protective layer.

摘要翻译： 提供了一种包括保险丝的半导体器件，其中防止在保险丝或金属布线周围的绝缘层由于保险丝的切断而被损坏，这在维修过程中可能发生。 半导体器件包括形成在半导体层上的导电线，形成在导电线上的保护层，与导电线电连接的一个或多个保险丝，以及形成在一个或多个保险丝上的保险丝保护层， 除了保护层。

公开(公告)号：US20100151674A1

公开(公告)日：2010-06-17

申请号：US12714704

申请日：2010-03-01

申请人： Jong-Myeong Lee ,  Sang-Woo Lee ,  Gil-Heyun Choi ,  Jong-Won Hong ,  Kyung-In Choi ,  Hyun-Bae Lee

发明人： Jong-Myeong Lee ,  Sang-Woo Lee ,  Gil-Heyun Choi ,  Jong-Won Hong ,  Kyung-In Choi ,  Hyun-Bae Lee

IPC分类号： H01L21/768

CPC分类号： H01L21/76804 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.

摘要翻译： 用于电连接铝和铜互连的结构和形成方法使用电连接铝和铜互连的内部形状来稳定半导体金属化工艺。 为此，铜互连设置在半导体衬底上。 互连感应层和互连插入层依次形成在铜互连上以具有暴露铜互连的接触孔。 接触孔的上直径可以形成为大于其直径。 阻挡层和铝互连填充在接触孔中。 铝互连形成为不通过接触孔直接接触铜互连。

公开(公告)号：US20090298282A1

公开(公告)日：2009-12-03

申请号：US12364598

申请日：2009-02-03

申请人： Jong-Ho Yun ,  Jong-Myeong Lee ,  Gil-heyun Choi

发明人： Jong-Ho Yun ,  Jong-Myeong Lee ,  Gil-heyun Choi

IPC分类号： H01L21/60

CPC分类号： H01L21/7682 ,  H01L21/76849 ,  H01L2224/05026 ,  H01L2224/05639 ,  H01L2224/05669 ,  H01L2224/13 ,  H01L2924/00014 ,  H01L2224/05099

摘要： Methods of forming an interlayer dielectric having an air gap are provided including forming a first insulating layer on a semiconductor substrate. The first insulating layer defines a trench. A metal wire is formed in the trench such that the metal wire is recessed beneath an upper surface of the first insulating layer. A metal layer is formed on the metal wire, wherein the metal layer includes a capping layer portion filling the recess, a upper portion formed on the capping layer portion, and an overhang portion formed on the portion of the first insulating layer adjacent to the trench protruding sideward from the upper portion. The first insulating layer is removed and a second insulating layer is formed on the semiconductor substrate to cover the metal layer, whereby an air gap is formed below the overhang portion of the metal layer. A portion of the second insulating layer is removed to expose the upper portion of the metal layer. The upper portion and the overhang portion of the metal layer are removed. A third insulating layer is formed on the semiconductor substrate from which the upper portion and the overhang portion have been removed to maintain the air gap.

摘要翻译： 提供了形成具有气隙的层间电介质的方法，包括在半导体衬底上形成第一绝缘层。 第一绝缘层限定沟槽。 在沟槽中形成金属线，使得金属线在第一绝缘层的上表面下方凹入。 在金属线上形成金属层，其中金属层包括填充凹部的覆盖层部分，形成在覆盖层部分上的上部，和形成在与沟槽相邻的第一绝缘层的部分上的突出部分 从上部侧向突出。 去除第一绝缘层，并且在半导体衬底上形成覆盖金属层的第二绝缘层，由此在金属层的伸出部分的下方形成气隙。 去除第二绝缘层的一部分以露出金属层的上部。 去除金属层的上部和外伸部分。 在半导体基板上形成第三绝缘层，从该基板上去除上部和外伸部分以保持气隙。

公开(公告)号：US07384866B2

公开(公告)日：2008-06-10

申请号：US11095006

申请日：2005-03-31

申请人： Ju-young Yun ,  Gil-heyun Choi ,  Byung-hee Kim ,  Jong-myeong Lee ,  Seung-gil Yang ,  Jung-hun Seo

发明人： Ju-young Yun ,  Gil-heyun Choi ,  Byung-hee Kim ,  Jong-myeong Lee ,  Seung-gil Yang ,  Jung-hun Seo

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L29/40

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L21/76882 ,  H01L2221/1089

摘要： A metal interconnection of a semiconductor device is fabricated by forming a dielectric pattern including a hole therein on a substrate, and forming a barrier metal layer in the hole and on the dielectric layer pattern outside the hole. At least some of the barrier metal layer is oxidized. An anti-nucleation layer is selectively formed on the oxidized barrier metal layer outside the hole that exposes the oxidized barrier metal layer in the hole. A metal layer then is selectively formed on the exposed oxidized barrier layer in the hole.

摘要翻译： 半导体器件的金属互连通过在衬底上形成包括孔的电介质图案，并在孔的外部和电介质层图案上形成阻挡金属层来制造。 至少一些阻挡金属层被氧化。 在孔的氧化阻挡金属层上选择性地形成抗成核层，该氧化的阻挡金属层露出孔中的氧化的阻挡金属层。 然后在孔中的暴露的氧化阻挡层上选择性地形成金属层。

公开(公告)号：US20080070405A1

公开(公告)日：2008-03-20

申请号：US11800996

申请日：2007-05-08

申请人： Jae-hwa Park ,  Gil-heyun Choi ,  Jong-myeong Lee ,  Hee-sook Park

发明人： Jae-hwa Park ,  Gil-heyun Choi ,  Jong-myeong Lee ,  Hee-sook Park

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/76856

摘要： A method of forming a conductive plug for an integrated circuit device may include forming an insulating layer on an integrated circuit substrate with the insulating layer having a surface opposite the substrate and a recess therein. A titanium (Ti) layer may be formed on sidewalls of the recess and on the surface of the insulating layer opposite the substrate. After forming the titanium (Ti) layer, a reaction reducing layer may be formed on portions of the titanium layer on the surface of the insulating layer opposite the substrate by at least one of ionized physical vapour deposition (iPVD) and/or nitriding a portion of the titanium layer, and the reaction reducing layer may include a material other than titanium. After forming the reaction reducing layer, a TiN layer may be formed on the reaction reducing layer and on sidewalls of the recess in the insulating layer using metal organic chemical vapour deposition (MOCVD). After forming the TiN layer, a conductive plug may be formed on the TiN layer in the recess in the insulating layer.

摘要翻译： 形成用于集成电路器件的导电插塞的方法可以包括在集成电路衬底上形成绝缘层，绝缘层具有与衬底相对的表面和凹槽。 钛（Ti）层可以形成在凹槽的侧壁上，并且在绝缘层的与衬底相对的表面上。 在形成钛（Ti）层之后，可以通过离子物理气相沉积（iPVD）和/或氮化一部分中的至少一种，在绝缘层的与基板相对的表面上的钛层的部分上形成反应还原层 的钛层，反应还原层可以包括钛以外的材料。 在形成反应还原层之后，可以使用金属有机化学气相沉积（MOCVD）在反应还原层上和在绝缘层的凹槽的侧壁上形成TiN层。 在形成TiN层之后，可以在绝缘层的凹部中的TiN层上形成导电塞。

公开(公告)号：US20080042290A1

公开(公告)日：2008-02-21

申请号：US11679723

申请日：2007-02-27

申请人： Jong-Myeong Lee ,  Sang-Woo Lee ,  Gil-Heyun Choi ,  Jong-Won Hong ,  Kyung-In Choi ,  Hyun-Bae Lee

发明人： Jong-Myeong Lee ,  Sang-Woo Lee ,  Gil-Heyun Choi ,  Jong-Won Hong ,  Kyung-In Choi ,  Hyun-Bae Lee

IPC分类号： H01L23/522 ,  H01L21/311

CPC分类号： H01L21/76804 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and formation method for electrically connecting aluminum and copper interconnections stabilize a semiconductor metallization process using an inner shape electrically connecting the aluminum and copper interconnections. To this end, a copper interconnection is disposed on a semiconductor substrate. An interconnection induction layer and an interconnection insertion layer are sequentially formed on the copper interconnection to have a contact hole exposing the copper interconnection. An upper diameter of the contact hole may be formed to be larger than a lower diameter thereof. A barrier layer and an aluminum interconnection are filled in the contact hole. The aluminum interconnection is formed not to directly contact the copper interconnection through the contact hole.

摘要翻译： 用于电连接铝和铜互连的结构和形成方法使用电连接铝和铜互连的内部形状来稳定半导体金属化工艺。 为此，铜互连设置在半导体衬底上。 互连感应层和互连插入层依次形成在铜互连上以具有暴露铜互连的接触孔。 接触孔的上直径可以形成为大于其直径。 阻挡层和铝互连填充在接触孔中。 铝互连形成为不通过接触孔直接接触铜互连。

公开(公告)号：US20080041308A1

公开(公告)日：2008-02-21

申请号：US11830156

申请日：2007-07-30

申请人： Hyung-Sik HONG ,  Ki-Sun KIM ,  No-Hyun HUH ,  Jong-Myeong LEE

发明人： Hyung-Sik HONG ,  Ki-Sun KIM ,  No-Hyun HUH ,  Jong-Myeong LEE

IPC分类号： C23C16/00 ,  B08B5/00

CPC分类号： C23C16/4405 ,  B08B7/0035 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32862 ,  H01J2237/2001

摘要： A substrate treating apparatus and related cleaning method are disclosed. The apparatus includes a stage heater disposed in the reaction chamber, serving as a first electrode during the generation of in-situ plasma, and supporting a substrate, a shower head disposed in the reaction chamber opposing the stage heater, serving as a second electrode during the generation of the in-situ plasma, and supplying a reaction gas into the reaction chamber, a remote plasma generator disposed external to the reaction chamber and configured to supply a cleaning gas to the reaction chamber following activation of the cleaning gas, and a gas transmitter disposed between the reaction chamber and the remote plasma generator and configured to transmit the reaction gas and the cleaning gas to the shower head.

摘要翻译： 公开了一种基板处理装置及其相关的清洁方法。 该装置包括设置在反应室中的级加热器，用于在原位等离子体生成期间作为第一电极，并且支撑基板，设置在与级加热器相对的反应室中的淋浴喷头，用作第二电极 产生原位等离子体，并将反应气体供应到反应室中;远程等离子体发生器，其设置在反应室外部并且构造成在清洁气体活化后向反应室供应清洁气体;气体 发射器设置在反应室和远程等离子体发生器之间，并被配置为将反应气体和清洁气体传输到淋浴头。

公开(公告)号：US20060240665A1

公开(公告)日：2006-10-26

申请号：US11474544

申请日：2006-06-26

申请人： Sang-Bom Kang ,  Kyung-In Choi ,  You-Kyoung Lee ,  Seong-Geon Park ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Sang-Woo Lee

发明人： Sang-Bom Kang ,  Kyung-In Choi ,  You-Kyoung Lee ,  Seong-Geon Park ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  Sang-Woo Lee

IPC分类号： H01L21/44

CPC分类号： H01L29/6659 ,  C23C16/34 ,  C23C16/56 ,  H01L21/265 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28556 ,  H01L21/76841 ,  H01L21/823425 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/6656 ,  H01L29/66583 ,  H01L29/7833

摘要： In a method for forming a field effect transistor, a metal nitride layer is formed on a gate electode insulating layer. Tantalum amine derivatives represented by the chemical formula Ta(NR1)(NR2R3)3, in which R1, R2 and R3 represent H or a C1-C6 alkyl group, may be used to form the metal nitride layer. Nitrogen may then be implanted into the metal nitride layer to increase the nitrogen content of the layer.

摘要翻译： 在形成场效应晶体管的方法中，在栅电极绝缘层上形成金属氮化物层。 由化学式Ta（NR 1）2（NR 2 R 3）3表示的钽胺衍生物，在 其中R 1，R 2和R 3均表示H或C 1 -C 6 - / SUB烷基可以用于形成金属氮化物层。 然后可以将氮气注入到金属氮化物层中以增加该层的氮含量。

公开(公告)号：US20060234494A1

公开(公告)日：2006-10-19

申请号：US11425970

申请日：2006-06-22

申请人： Kyung-In CHOI ,  Sang-Bom KANG ,  Seong-Geon PARK ,  You-Kyoung LEE ,  Gil-Heyun CHOI ,  Jong-Myeong LEE ,  Sang-Woo LEE

发明人： Kyung-In CHOI ,  Sang-Bom KANG ,  Seong-Geon PARK ,  You-Kyoung LEE ,  Gil-Heyun CHOI ,  Jong-Myeong LEE ,  Sang-Woo LEE

IPC分类号： H01L21/4763

CPC分类号： H01L21/28556 ,  C23C16/34 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/7685 ,  H01L21/76858 ,  H01L21/76862 ,  H01L21/76867 ,  H01L21/76877

摘要： In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3 in which R1, R2 and R3 represent H or C1-C6 alkyl group are introduced onto the insulating interlayer. A portion of the tantalum amine derivatives is chemisorbed on the insulating interlayer. The rest of tantalum amine derivatives non-chemisorbed on the insulating interlayer is removed from the insulating interlayer. A reacting gas is introduced onto the insulating interlayer. A ligand in the tantalum amine derivatives chemisorbed on the insulating interlayer is removed from the tantalum amine derivatives by a chemical reaction between the reacting gas and the ligand to form a solid material including tantalum nitride. The solid material is accumulated on the insulating interlayer through repeating the above processes to form a wiring.

摘要翻译： 在使用原子层沉积形成半导体器件的布线的方法中，在基板上形成绝缘中间层。 由化学式Ta（NR 1）3（NR 2 R 3）3表示的钽胺衍生物，其中 R 1，R 2和R 3代表H或C 1 -C 6 >烷基引入到绝缘中间层上。 一部分钽胺衍生物被化学吸附在绝缘中间层上。 在绝缘中间层上除去非化学吸附在绝缘中间层上的其余的钽胺衍生物。 将反应气体引入到绝缘中间层上。 化学吸附在绝缘中间层上的钽胺衍生物中的配体通过反应气体和配位体之间的化学反应从钽胺衍生物中除去以形成包括氮化钽的固体材料。 通过重复上述处理，将固体材料积聚在绝缘层间，形成布线。