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    Semiconductor laser and a method for producing the same
    72.
    发明授权
    Semiconductor laser and a method for producing the same 失效
    半导体激光器及其制造方法

    公开(公告)号：US5974068A

    公开(公告)日：1999-10-26

    申请号：US822409

    申请日：1997-03-21

    申请人： Hideto Adachi ,  Isao Kidoguchi ,  Kiyoshi Ohnaka ,  Satoshi Kamiyama

    发明人： Hideto Adachi ,  Isao Kidoguchi ,  Kiyoshi Ohnaka ,  Satoshi Kamiyama

    IPC分类号： H01S5/065 ,  H01S5/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/10 ,  H01S5/2231 ,  H01S5/0655 ,  H01S5/0658 ,  H01S5/106 ,  H01S5/1064 ,  H01S5/209 ,  H01S5/2206 ,  H01S5/2219 ,  H01S5/222 ,  H01S5/32325

    摘要： A semiconductor laser according to the present invention includes: a semiconductor substrate; a multilayer structure provided on the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers interposing the active layer, and current confining portion for injecting a current into a stripe-shaped predetermined region of the active layer, wherein the current confining portion includes a first current confining layer formed in regions excluding a region corresponding to the predetermined region of the active layer, the first current confining layer having an energy band gap larger than an energy band gap of the active layer and having a refractive index smaller than a refractive index of the active layer.

    摘要翻译： 根据本发明的半导体激光器包括：半导体衬底; 设置在所述半导体衬底上的多层结构，所述多层结构包括有源层，插入所述有源层的一对包覆层以及用于将电流注入到所述有源层的条形预定区域中的电流限制部分，其中，所述电流 限制部分包括形成在除了与有源层的预定区域相对应的区域之外的区域中的第一电流限制层，第一电流限制层具有大于有源层的能带隙的能带隙并具有更小的折射率 比活性层的折射率高。

    Electro-absorption optical modulator and method for fabricating the same
    74.
    发明授权
    Electro-absorption optical modulator and method for fabricating the same 失效
    电吸收光调制器及其制造方法

    公开(公告)号：US5784188A

    公开(公告)日：1998-07-21

    申请号：US796934

    申请日：1997-02-07

    申请人： Shinji Nakamura ,  Satoshi Kamiyama ,  Kenichi Matsuda ,  Yasushi Matsui

    发明人： Shinji Nakamura ,  Satoshi Kamiyama ,  Kenichi Matsuda ,  Yasushi Matsui

    IPC分类号： G02F1/015 ,  G02F1/017 ,  G02F1/03

    CPC分类号： B82Y20/00 ,  G02F1/01708 ,  G02F2001/0157 ,  G02F2203/19

    摘要： An electro-absorption optical modulator, where a waveguide length of the absorption layer is denoted by L, a light confinement coefficient thereof is denoted by .GAMMA., and a performance factor of the absorption layer at an applied voltage V to an absorption layer is denoted by K(V), has design parameters selected so that a relationship .vertline.K(V)-.GAMMA..multidot.L.vertline. .ltoreq.0.005 cm is satisfied in a continuous operation range of a quenching ration T.sub.Att. The waveguide length L is preferably optimizrd so as to satisfy K(V).apprxeq..GAMMA..multidot.L in the operation range.

    摘要翻译： 将吸收层的波导长度用L表示的电吸收光调制器用GAMMA表示其光限制系数，吸收层的施加电压V下的吸收层的性能因子表示为 K（V）具有选择的设计参数，使得关系| K（V）-GAMMA xL | 在骤冷比TAtt的连续运行范围内满足0.005cm。 波导长度L优选地优选地在操作范围内满足K（V）APPROX GAMMA xL。

    Semiconductor laser and production method thereof
    75.
    发明授权
    Semiconductor laser and production method thereof 失效
    半导体激光及其制造方法

    公开(公告)号：US5742629A

    公开(公告)日：1998-04-21

    申请号：US684383

    申请日：1996-07-19

    申请人： Takashi Nishikawa ,  Nobuyuki Uemura ,  Satoshi Kamiyama

    发明人： Takashi Nishikawa ,  Nobuyuki Uemura ,  Satoshi Kamiyama

    IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/327 ,  H01S5/347 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/347 ,  H01S5/204 ,  H01S5/2231 ,  H01S5/327

    摘要： A semiconductor laser includes: an active layer formed of a II-VI group compound semiconductor material; a first cladding layer and a second cladding layer disposed so as to put the active layer therebetween; a light confinement layer provided on the second cladding layer, having an opening for current flow and formed of ZnMgSSe; and a third cladding layer provided at the opening of the light confinement layer. The light confinement layer has high resistivity or has a conductivity type opposite to that of the third cladding layer; the second and third cladding layers are formed of ZnMgSSe; and a Mg content and a S content of the light confinement layer are larger than a Mg content and a S content of the second and third cladding layers.

    摘要翻译： 半导体激光器包括：由II-VI族化合物半导体材料形成的有源层; 第一包层和第二包层，其设置成将活性层置于其间; 设置在第二包覆层上的光限制层，具有用于电流流动并由ZnMgSSe形成的开口; 以及设置在所述光限制层的开口处的第三包层。 光限制层具有高电阻率或具有与第三覆层相反的导电类型; 第二和第三覆层由ZnMgSSe形成; 并且所述光限制层的Mg含量和S含量大于所述第二和第三包层的Mg含量和S含量。

    Method of manufacturing a semiconductor device
    76.
    发明授权
    Method of manufacturing a semiconductor device 失效
    制造半导体器件的方法

    公开(公告)号：US5622888A

    公开(公告)日：1997-04-22

    申请号：US550355

    申请日：1995-10-30

    申请人： Makoto Sekine ,  Satoshi Kamiyama

    发明人： Makoto Sekine ,  Satoshi Kamiyama

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/70

    CPC分类号： H01L27/10852 ,  H01L28/84

    摘要： A semiconductor device has a capacitive element with excellent leak current characteristics which has a tungsten film with a roughened surface for increasing the surface of a lower electrode. A capacitive element for use in a VLSI memory circuit such as a DRAM or the like is fabricated by forming a thin, roughened tungsten film selectively on a surface of a lower electrode of polysilicon by chemical vapor-phase growth and forming a capacitive insulating film on the surface of the lower electrode of polysilicon, densifying the capacitive insulating film, and forming an upper electrode of a metal element.

    摘要翻译： 半导体器件具有优异的漏电流特性的电容元件，其具有用于增加下电极表面的粗糙表面的钨膜。 通过化学气相生长在多晶硅的下电极的表面上选择性地形成薄的粗糙的钨膜，并形成电容绝缘膜，制造用于诸如DRAM等的VLSI存储器电路中的电容元件 多晶硅的下电极的表面，使电容绝缘膜致密化，并形成金属元件的上电极。

    Semiconductor laser and a method for producing the same
    77.
    发明授权
    Semiconductor laser and a method for producing the same 失效
    半导体激光器及其制造方法

    公开(公告)号：US5383214A

    公开(公告)日：1995-01-17

    申请号：US92358

    申请日：1993-07-15

    申请人： Isao Kidoguchi ,  Satoshi Kamiyama ,  Kiyoshi Ohnaka

    发明人： Isao Kidoguchi ,  Satoshi Kamiyama ,  Kiyoshi Ohnaka

    IPC分类号： H01S5/10 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/1039 ,  H01S5/204 ,  H01S5/205 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/3211 ,  H01S5/32325

    摘要： A semiconductor laser including a semiconductor substrate and a multilayer structure formed upon the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers between which the active layer is interposed, and a current confinement layer for injecting a current into a stripe-shaped predetermined region of the active layer. The current confinement layer comprises a first current blocking layer formed in regions thereof excluding a region corresponding to the predetermined region of the active layer. The first current blocking layer has a refractive index higher than a refractive index of the pair of cladding layers and an energy band gap larger than an energy band gap of the active layer.

    摘要翻译： 一种半导体激光器，包括半导体衬底和形成在半导体衬底上的多层结构，所述多层结构包括有源层，一对覆盖层，有源层插入在其间，以及用于将电流注入到条带中的电流限制层 形状的有源层的预定区域。 电流限制层包括在除了与有源层的预定区域相对应的区域之外的区域中形成的第一电流阻挡层。 第一电流阻挡层的折射率高于一对包覆层的折射率，并且能带隙大于有源层的能带隙。

    Method of fabricating a semiconductor laser
    78.
    发明授权
    Method of fabricating a semiconductor laser 失效
    制造半导体激光器的方法

    公开(公告)号：US5268328A

    公开(公告)日：1993-12-07

    申请号：US991223

    申请日：1992-12-16

    申请人： Yoshihiro Mori ,  Masaya Mannoh ,  Satoshi Kamiyama ,  Kiyoshi Ohnaka

    发明人： Yoshihiro Mori ,  Masaya Mannoh ,  Satoshi Kamiyama ,  Kiyoshi Ohnaka

    IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01L21/20

    CPC分类号： H01S5/2231 ,  H01S5/221 ,  H01S5/32325

    摘要： A method of fabricating a semiconductor laser includes successively forming on a semiconductor substrate by crystal growth an active waveguide comprised of a compound semiconductor comprising a Group V element phosphorus, a thin-film layer comprised of a first-conductivity type compound semiconductor comprising a Group V element arsenic and a current blocking layer comprised of a second-conductivity type compound semiconductor comprising a Group V element arsenic. A mask is formed for selectively etching the current blocking layer in the form of a stripe. A buffer-etching step is formed on both the current blocking layer and the mask to expose a surface of the current blocking layer and the thin-film layer, the surface including a Group V element arsenic. An outer cladding layer comprising a first-conductivity type compound semiconductor having a Group V element arsenic is formed on the current blocking layer and the thin-film layer in an atmosphere having a Group V element arsenic. The method has characteristic features including carrying out the crystal growth only twice, minimizing the movement of impurities in crystals, regrowing the interface with a very little defect and forming a structure wherein the outer cladding layer has a smaller width at its portion near to the active waveguide.

    摘要翻译： 制造半导体激光器的方法包括：通过晶体生长在半导体衬底上依次形成由包括V族元素磷的化合物半导体构成的有源波导，由包含第V族元素的第一导电型化合物半导体构成的薄膜层 元素砷和由包含第V族元素砷的第二导电型化合物半导体构成的电流阻挡层。 形成掩模以选择性地蚀刻呈条状形式的电流阻挡层。 在电流阻挡层和掩模上形成缓冲蚀刻步骤，以暴露电流阻挡层和薄膜层的表面，该表面包括第V族元素砷。 在具有V族元素砷的气氛中，在电流阻挡层和薄膜层上形成包含具有V族元素砷的第一导电型化合物半导体的外包层。 该方法具有特征，包括仅进行晶体生长两次，使晶体中的杂质的移动最小化，再次产生具有很小缺陷的界面，并且形成其中外包层在其活性附近部分具有较小宽度的结构 波导。