Geometric configuration or alignment of protective material in a gap structure for electrical devices
    72.
    发明授权
    Geometric configuration or alignment of protective material in a gap structure for electrical devices 有权
    保护材料在电气设备的间隙结构中的几何配置或对准

    公开(公告)号:US09053844B2

    公开(公告)日:2015-06-09

    申请号:US12878344

    申请日:2010-09-09

    Abstract: An electrical device that includes a first electrode and a second electrode that are separated from one another so as to form a gap structure. A layer of protective material spans the gap structure to contact the first electrode and the second electrode. A dimension of the gap structure, corresponding to a separation distance between the first electrode and the second electrode, is varied and includes a minimum separation distance that coincides with a critical path of the layer of protective material between the first electrode and the second electrode.

    Abstract translation: 一种电气装置,包括彼此分离以形成间隙结构的第一电极和第二电极。 一层保护材料跨越间隙结构以接触第一电极和第二电极。 相应于第一电极和第二电极之间的间隔距离的间隙结构的尺寸是变化的并且包括与第一电极和第二电极之间的保护材料层的关键路径一致的最小间隔距离。

    SUBSTRATE DEVICE OR PACKAGE USING EMBEDDED LAYER OF VOLTAGE SWITCHABLE DIELECTRIC MATERIAL IN A VERTICAL SWITCHING CONFIGURATION
    74.
    发明申请
    SUBSTRATE DEVICE OR PACKAGE USING EMBEDDED LAYER OF VOLTAGE SWITCHABLE DIELECTRIC MATERIAL IN A VERTICAL SWITCHING CONFIGURATION 有权
    在垂直切换配置中使用电压可切换介质材料的嵌入层的衬底器件或封装

    公开(公告)号:US20120256721A1

    公开(公告)日:2012-10-11

    申请号:US13524776

    申请日:2012-06-15

    Abstract: A substrate device includes an embedded layer of VSD material that overlays a conductive element or layer to provide a ground. An electrode, connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.

    Abstract translation: 衬底器件包括覆盖导电元件或层以提供接地的VSD材料的嵌入层。 连接到要被保护的电路元件的电极延伸到衬底的厚度以与VSD层接触。 当电路元件在正常电压下工作时,VSD层是电介质的,不连接到地。 当在电路元件上发生瞬态电事件时,VSD层立即切换到导通状态,使得第一电极连接到地。

    Wireless communication device using voltage switchable dielectric material
    76.
    发明申请
    Wireless communication device using voltage switchable dielectric material 审中-公开
    使用可切换电介质材料的无线通信设备

    公开(公告)号:US20120195018A1

    公开(公告)日:2012-08-02

    申请号:US11562222

    申请日:2006-11-21

    Applicant: Lex Kosowsky

    Inventor: Lex Kosowsky

    Abstract: A wireless communication device, such as an RFID tag, is provided material that is dielectric, unless a voltage is applied that exceeds the materials characteristic voltage level. In the presence of such voltage, the material becomes conductive. The integration of such material into the device may be mechanical and/or electrical.

    Abstract translation: 提供诸如RFID标签的无线通信设备,其是介电材料,除非施加超过材料特性电压电平的电压。 在存在这种电压的情况下,材料变得导电。 将这种材料整合到装置中可以是机械的和/或电的。

    Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
    77.
    发明授权
    Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration 有权
    基板装置或封装,采用垂直开关配置的可切换电介质材料的嵌入层

    公开(公告)号:US08203421B2

    公开(公告)日:2012-06-19

    申请号:US12417589

    申请日:2009-04-02

    Abstract: A substrate device includes an embedded layer of VSD material that overlays a conductive element or layer to provide a ground. An electrode, connected to circuit elements that are to be protected, extends into the thickness of the substrate to make contact with the VSD layer. When the circuit elements are operated under normal voltages, the VSD layer is dielectric and not connected to ground. When a transient electrical event occurs on the circuit elements, the VSD layer switches instantly to a conductive state, so that the first electrode is connected to ground.

    Abstract translation: 衬底器件包括覆盖导电元件或层以提供接地的VSD材料的嵌入层。 连接到要被保护的电路元件的电极延伸到衬底的厚度以与VSD层接触。 当电路元件在正常电压下工作时,VSD层是电介质的,不连接到地。 当在电路元件上发生瞬态电事件时,VSD层立即切换到导通状态,使得第一电极连接到地。

    Methods for Fabricating Current-Carrying Structures Using Voltage Switchable Dielectric Materials
    80.
    发明申请
    Methods for Fabricating Current-Carrying Structures Using Voltage Switchable Dielectric Materials 失效
    使用可开关电介质材料制造电流承载结构的方法

    公开(公告)号:US20110061230A1

    公开(公告)日:2011-03-17

    申请号:US12953158

    申请日:2010-11-23

    Applicant: Lex Kosowsky

    Inventor: Lex Kosowsky

    Abstract: A method includes providing a voltage switchable dielectric material having a characteristic voltage, exposing the voltage switchable dielectric material to a source of ions associated with an electrically conductive material, and creating a voltage difference between the source and the voltage switchable dielectric material that is greater than the characteristic voltage. Electrical current is allowed to flow from the voltage switchable dielectric material, and the electrically conductive material is deposited on the voltage switchable dielectric material. A body comprises a voltage switchable dielectric material and a conductive material deposited on the voltage switchable dielectric material using an electrochemical process. In some cases, the conductive material is deposited using electroplating.

    Abstract translation: 一种方法包括提供具有特征电压的电压可切换电介质材料,将电压可切换电介质材料暴露于与导电材料相关的离子源,并且产生电源和可切换电介质材料之间的电压差大于 特征电压。 允许电流从电压可切换介电材料流出,并且导电材料沉积在可开关电介质材料上。 身体包括电​​压可​​切换电介质材料和使用电化学过程沉积在可开关电介质材料上的导电材料。 在一些情况下,使用电镀沉积导电材料。

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