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公开(公告)号：US09991424B2
公开(公告)日：2018-06-05
申请号：US15355219
申请日：2016-11-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Yeo Jin Yoon , Joon Hee Lee , Ki Bum Nam , Da Hye Kim , Chang Ik Im , Young Wug Kim
IPC: H01L31/12 , H01L33/44 , H01L33/22 , H01L33/00 , H01L33/20 , H01L33/38 , H01L33/32 , H01L33/06 , H01L33/60 , H01L33/40
CPC classification number: H01L33/44 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2933/0083 , H01L2933/0091
Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.
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72.发明授权公开(公告)号：US09793441B2
公开(公告)日：2017-10-17
申请号：US15271026
申请日：2016-09-20
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Dae Woong Suh , Min Woo Kang , Joon Sub Lee , Hyun A Kim , Kyoung Wan Kim , Chang Yeon Kim
CPC classification number: H01L33/508 , H01L33/20 , H01L33/32 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/502 , H01L33/62 , H01L2224/16 , H01L2933/0016
Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of die area of the opening region to the area of the masking region in the second region.
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公开(公告)号：US09728698B2
公开(公告)日：2017-08-08
申请号：US14730087
申请日：2015-06-03
Applicant: Seoul Viosys Co., Ltd.
Inventor： So Ra Lee , Chang Yeon Kim , Ju Yong Park , Sung Su Son
IPC: H01L33/64 , H01L27/15 , H01L29/861 , H01L33/38 , H01L33/52 , H01L33/62 , H01L27/02 , H01L25/16 , H01L33/48 , H01L33/58
CPC classification number: H01L33/647 , H01L25/167 , H01L27/0248 , H01L29/861 , H01L29/8613 , H01L33/382 , H01L33/387 , H01L33/486 , H01L33/58 , H01L33/64 , H01L2924/0002 , H01L2924/00
Abstract: Exemplary embodiments provide a light emitting diode and a method for manufacturing the same. The light emitting diode includes a light emitting structure, a plurality of holes formed through a second conductive type semiconductor layer and an active layer such that a first conductive type semiconductor layer is partially exposed therethrough, and a first electrode and a second electrode electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively, while being insulated from each other. The second electrode includes openings corresponding to the plurality of holes, a plurality of unit electrode layers separated from each other, and at least one connection layer electrically connecting at least two unit electrode layers to each other. The first electrode forms ohmic contact with the first conductive type semiconductor layer through the plurality of holes and partially covers the light emitting structure.
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74.发明授权公开(公告)号：US09577171B2
公开(公告)日：2017-02-21
申请号：US14859052
申请日：2015-09-18
Applicant: Seoul Viosys Co., Ltd.
Inventor： So Ra Lee , Chang Yeon Kim , Ju Yong Park , Sung Su Son
CPC classification number: H01L33/642 , H01L27/15 , H01L27/156 , H01L33/06 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/387 , H01L33/44 , H01L33/62
Abstract: Disclosed herein is a light emitting device. The light emitting device is provided to include a light emitting structure, a first electrode pad, a second electrode pad and a heat dissipation pad, and a substrate on which the light emitting diode is mounted. The substrate includes a base; an insulation pattern formed on the base; and a conductive pattern disposed on the insulation pattern. The base includes a post and a groove separating the post from the conductive pattern. An upper surface of the post is placed lower than an upper surface of the conductive pattern, the heat dissipation pad contacts the upper surface of the post, and the first electrode pad and the second electrode pad contact the conductive pattern. With this structure, the light emitting device has excellent properties in terms of electrical stability and heat dissipation efficiency.
Abstract translation: 本文公开了一种发光器件。 发光装置被设置为包括发光结构，第一电极焊盘，第二电极焊盘和散热垫，以及安装有发光二极管的基板。 基板包括基体; 形成在基座上的绝缘图案; 以及布置在绝缘图案上的导电图案。 底座包括柱和将导柱与导电图案分开的凹槽。 柱的上表面被放置成低于导电图案的上表面，散热垫接触柱的上表面，并且第一电极焊盘和第二电极焊盘接触导电图案。 利用这种结构，发光器件在电稳定性和散热效率方面具有优异的性能。
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公开(公告)号：US09543488B2
公开(公告)日：2017-01-10
申请号：US14748149
申请日：2015-06-23
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Chang Yeon Kim , Sung Su Son , Dae Woong Suh
CPC classification number: H01L33/62 , H01L33/38 , H01L33/44 , H01L33/46 , H01L2224/48091 , H01L2224/73104 , H01L2924/00014
Abstract: Disclosed herein is a light emitting device manufactured by separating a growth substrate in a wafer level. The light emitting device includes: a base; a light emitting structure disposed on the base; and a plurality of second contact electrodes disposed between the base and the light emitting structure, wherein the base includes at least two bulk electrodes electrically connected to the light emitting structure and an insulation support disposed between the bulk electrodes and enclosing the bulk electrodes, the insulation support and the bulk electrodes each including concave parts and convex parts engaged with each other on surfaces facing each other, and the convex parts including a section in which a width thereof is changed in a protrusion direction.
Abstract translation: 本文公开了通过在晶片级分离生长衬底而制造的发光器件。 发光装置包括：基座; 发光结构，设置在所述基底上; 以及多个第二接触电极，其设置在所述基底和所述发光结构之间，其中所述基底包括电连接到所述发光结构的至少两个体电极和设置在所述体电极之间并包围所述体电极的绝缘支撑件，所述绝缘体 支撑体和各体积电极，每个包括彼此面对的表面彼此接合的凹部和凸部，并且凸部包括其突起方向上的宽度变化的部分。
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Patent Agency Ranking
76.发明授权Light emitting diode module for surface mount technology and method of manufacturing the same 有权用于表面贴装技术的发光二极管模块及其制造方法公开(公告)号：US09461212B2
公开(公告)日：2016-10-04
申请号：US14752413
申请日：2015-06-26
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Dae Woong Suh , Min Woo Kang , Joon Sub Lee , Hyun A Kim , Kyoung Wan Kim , Chang Yeon Kim
CPC classification number: H01L33/508 , H01L33/20 , H01L33/32 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/502 , H01L33/62 , H01L2224/16 , H01L2933/0016
Abstract: An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a second conductive type semiconductor layer positioned over the active layer; and a defect blocking layer comprising a masking region to cover at least a part of the top surface of the second conductive semiconductor layer and an opening region to partially expose the top surface of the second conductive type semiconductor layer, wherein the active layer and the second conductive type semiconductor layer are disposed to expose a part of the first conductive type semiconductor layer, and wherein the defect blocking layer comprises a first region and a second region surrounding the first region, and a ratio of the area of the opening region to the area of the masking region in the first region is different from a ratio of the area of the opening region to the area of the masking region in the second region.
Abstract translation: LED被提供以包括：第一导电类型半导体层; 位于所述第一导电类型半导体层上方的有源层; 位于有源层上的第二导电类型半导体层; 以及缺陷阻挡层，其包括覆盖所述第二导电半导体层的顶表面的至少一部分的掩模区域和用于部分地暴露所述第二导电类型半导体层的顶表面的开口区域，其中所述有源层和所述第二导电类型半导体层 导电型半导体层被设置为暴露第一导电类型半导体层的一部分，并且其中缺陷阻挡层包括围绕第一区域的第一区域和第二区域，以及开口区域的面积与面积的比率 在第一区域中的掩模区域与第二区域中的开口区域的面积与掩蔽区域的面积的比率不同。
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公开(公告)号：US09362449B2
公开(公告)日：2016-06-07
申请号：US14464179
申请日：2014-08-20
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Yeon Kim , Dae Sung Cho , Ki Bum Nam , Young Wug Kim , Jong Kyun You , Kenji Shimoyama , Takahide Joichi , Kaori Kurihara
CPC classification number: H01L33/20 , H01L33/0075 , H01L33/0079 , H01L33/22 , H01L33/387 , H01L33/44
Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.
Abstract translation: 本文公开了一种高效率发光二极管及其制造方法。 发光二极管包括设置在支撑基板上并包括氮化镓基p型半导体层，氮化镓基有源层和氮化镓基n型半导体层的半导体堆叠结构; 以及设置在所述支撑基板和所述半导体堆叠结构之间的反射层，其中所述半导体堆叠结构包括形成在所述突起的顶表面上的具有截头圆锥形状的多个突起和细锥。 通过这种构造，可以提高具有低位错密度的半导体层叠结构的光提取效率。
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公开(公告)号：US09231169B2
公开(公告)日：2016-01-05
申请号：US14132123
申请日：2013-12-18
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Ik Im , Mi Hee Lee , Ju Yong Park , Sung Su Son , Chang Yeon Kim
CPC classification number: H01L33/502 , G02B1/007 , H01L33/04 , H01L33/38 , H01L33/40 , H01L2933/0083
Abstract: Exemplary embodiments of the present invention provide a high efficiency light emitting diode including a semiconductor stack including a first-type compound semiconductor layer, an active layer, and a second-type compound semiconductor layer, a first electrode disposed on the semiconductor stack, and a graphene-metamaterial laminate structure disposed between the first electrode and the semiconductor stack.
Abstract translation: 本发明的示例性实施例提供了一种高效率发光二极管，其包括包括第一类型化合物半导体层，有源层和第二类型化合物半导体层的半导体堆叠，设置在半导体堆叠上的第一电极和 设置在第一电极和半导体堆叠之间的石墨烯 - 超材料层压结构。
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公开(公告)号：US20150311384A1
公开(公告)日：2015-10-29
申请号：US14796421
申请日：2015-07-10
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jeong Hun HEO , Yeo Jin Yoon , Joo Won Choi , Joon Hee Lee , Chang Yeon Kim , Su Young Lee
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.
Abstract translation: 制造半导体器件的方法包括在氮化镓衬底上形成包括掩模区域和开放区域的绝缘图案，生长氮化镓半导体层以覆盖绝缘图案，以及图案化半导体层以形成分离的多个半导体堆叠 所述多个半导体堆叠通过所述绝缘图案与所述氮化镓衬底电隔离。
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公开(公告)号：US09018027B2
公开(公告)日：2015-04-28
申请号：US13950958
申请日：2013-07-25
Applicant: Seoul Viosys Co., Ltd.
Inventor： Tae Hyuk Im , Chang Yeon Kim , Young Wug Kim
CPC classification number: H01L21/0254 , H01L33/0079 , H01L33/32
Abstract: A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.
Abstract translation: 一种制造基于氮化镓（GaN）的半导体器件的方法。 该方法包括制备具有下表面和上表面的GaN衬底; 在GaN衬底的上表面上生长GaN基半导体层以形成半导体堆叠; 在所述半导体堆叠上形成支撑衬底; 以及将GaN衬底与半导体堆叠分离。 GaN衬底的分离包括从GaN衬底的下表面照射激光。 激光穿过GaN衬底的下表面并在由GaN衬底和半导体堆叠构成的结构内形成激光吸收区。
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