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公开(公告)号：US10232067B2
公开(公告)日：2019-03-19
申请号：US14478967
申请日：2014-09-05
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Rack Kim , Chung Hoon Lee , Dae Woong Suh
Abstract: A mobile disinfector using UV LEDs can include: a case forming an exterior structure of the disinfector; a cover including two parts coupled to respective sides of the case and including openings formed on the cover; and LED units exposed to outside through the openings formed on the cover. Since the cover is coupled to the case such that an angle between the cover and the case is adjusted, an irradiation angle of light emitted to the outside from the LED units is controlled.
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公开(公告)号：US10103305B2
公开(公告)日：2018-10-16
申请号：US15523037
申请日：2015-10-16
Applicant: Seoul Viosys Co., Ltd.
Inventor： Yeo Jin Yoon , Chung Hoon Lee
Abstract: A high-efficiency light-emitting device of the present invention includes: a nitride-based semiconductor laminate layer comprising a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; a substrate comprising a first electrode and a second electrode each connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, a first pad electrode and a second pad electrode each connected with the first electrode and the second electrode, and a first connection pad and a second connection pad each connected with the first pad electrode and the second pad electrode; and a solder positioned between the pad electrodes and the connection pads.
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公开(公告)号：US20160345398A1
公开(公告)日：2016-11-24
申请号：US15230171
申请日：2016-08-05
Applicant: Seoul Viosys Co., Ltd.
Inventor： Chung Hoon Lee , James S. Speck , Hong San Kim , Jae Jo Kim , Sung Han Kim , Jae Ho Lee
CPC classification number: H05B33/0827 , H01L27/153 , H01L27/156 , H01L2224/48137 , H01L2224/49107 , H01L2224/73265 , H05B33/02 , H05B33/08 , H05B33/0806 , H05B33/0815 , H05B33/0821 , H05B33/0824 , H05B33/083 , H05B33/0848 , H05B37/029
Abstract: Disclosed is an improved light-emitting device for an AC power operation. A conventional light emitting device employs an AC light-emitting diode having arrays of light emitting cells connected in reverse parallel. The arrays in the prior art alternately repeat on/off in response to a phase change of an AC power source, resulting in short light emission time during a ½ cycle and the occurrence of a flicker effect. An AC light-emitting device according to the present invention employs a variety of means by which light emission time is prolonged during a ½ cycle in response to a phase change of an AC power source and a flicker effect can be reduced. For example, the means may be switching blocks respectively connected to nodes between the light emitting cells, switching blocks connected to a plurality of arrays, or a delay phosphor. Further, there is provided an AC light-emitting device, wherein a plurality of arrays having the different numbers of light emitting cells are employed to increase light emission time and to reduce a flicker effect.
Abstract translation: 公开了一种用于AC电力操作的改进的发光装置。 传统的发光器件采用具有反向并联连接的发光单元阵列的交流发光二极管。 现有技术中的阵列响应于AC电源的相变而交替重复开/关，导致在1/2周期期间的短发光时间和闪烁效应的发生。 根据本发明的交流发光装置采用各种手段，响应于交流电源的相变而在1/2周期期间发光时间延长，并且可以减少闪烁效应。 例如，装置可以是分别连接到发光单元，连接到多个阵列的切换块或延迟荧光体之间的节点的切换块。 此外，提供了一种交流发光装置，其中采用具有不同数量的发光单元的多个阵列来增加发光时间并减少闪烁效果。
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公开(公告)号：US09356198B2
公开(公告)日：2016-05-31
申请号：US14807290
申请日：2015-07-23
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jong Hyeon Chae , Chung Hoon Lee , Daewoong Suh , Jong Min Jang , Joon Sup Lee , Won Young Roh , Min Woo Kang , Hyun A Kim , Seon Min Bae
CPC classification number: H01L33/44 , H01L27/153 , H01L33/005 , H01L33/007 , H01L33/08 , H01L33/20 , H01L33/387 , H01L33/405 , H01L2933/0025
Abstract: A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed.
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75.发明授权Light emitting diode chip having distributed bragg reflector and method of fabricating the same 有权具有分布式布拉格反射体的发光二极管芯片及其制造方法公开(公告)号：US09343631B2
公开(公告)日：2016-05-17
申请号：US14606863
申请日：2015-01-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： Sum Geun Lee , Sang Ki Jin , Jin Cheol Shin , Jong Kyu Kim , So Ra Lee , Chung Hoon Lee
CPC classification number: H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
Abstract: A light-emitting diode chip configured to emit light of a first wavelength range and light of a second wavelength range, including a substrate, a light-emitting structure disposed on a first surface of the substrate, the light-emitting structure including an active layer disposed between a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer, and configured to emit light of the first wavelength range, and first and second distributed Bragg reflectors (DBRs) disposed on a second surface of the substrate. The first DBR is disposed closer to the substrate than the second DBR, the first wavelength range comprises a blue wavelength range, the first DBR comprises a higher reflectivity for light of the second wavelength range than for light of the first wavelength range, and the second DBR comprises a higher reflectivity for light of the first wavelength range than for light of the second wavelength range.
Abstract translation: 一种发光二极管芯片，被配置为发射第一波长范围的光和包括基板的第二波长范围的光，设置在所述基板的第一表面上的发光结构，所述发光结构包括有源层 设置在第一导电类型半导体层和第二导电类型半导体层之间并被配置为发射第一波长范围的光，以及布置在基板的第二表面上的第一和第二分布布拉格反射器（DBR）。 第一DBR被设置为比第二DBR更靠近基板，第一波长范围包括蓝色波长范围，第一DBR包括对于第二波长范围的光比第一波长范围的光更高的反射率， 对于第一波长范围的光，DBR包括比对于第二波长范围的光更高的反射率。
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Patent Agency Ranking
公开(公告)号：US20140339566A1
公开(公告)日：2014-11-20
申请号：US14364281
申请日：2012-12-13
Applicant: Seoul Viosys Co., Ltd.
Inventor： Won Cheol Seo , Dae Sung Cho , Chung Hoon Lee , Ki Bum Nam
CPC classification number: H01L33/32 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/22 , H01L33/38 , H01L33/382 , H01L33/42
Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The method includes forming a first GaN layer, a sacrificial layer and a second GaN layer on a GaN substrate, wherein the sacrificial layer has a bandgap narrower than those of the GaN layers; forming a groove penetrating the second GaN layer and the sacrificial layer; growing GaN-based semiconductor layers on the second GaN layer to form a semiconductor stack; forming a support substrate on the semiconductor stack; and removing the GaN substrate from the semiconductor stack by etching the sacrificial layer. Accordingly, since the sacrificial layer is etched using the groove, the support substrate can be separated from the semiconductor stack without damaging the support substrate.
Abstract translation: 公开了一种半导体器件及其制造方法。 该方法包括在GaN衬底上形成第一GaN层，牺牲层和第二GaN层，其中该牺牲层具有窄于GaN层的带隙; 形成贯穿所述第二GaN层和所述牺牲层的沟槽; 在第二GaN层上生长GaN基半导体层以形成半导体堆叠; 在所述半导体堆叠上形成支撑衬底; 以及通过蚀刻所述牺牲层从所述半导体堆叠移除所述GaN衬底。 因此，由于使用凹槽蚀刻牺牲层，所以支撑基板可以与半导体叠层分离，而不会损坏支撑基板。
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公开(公告)号：US12009384B2
公开(公告)日：2024-06-11
申请号：US17366462
申请日：2021-07-02
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jong Hyeon Chae , Chung Hoon Lee , Seong Gyu Jang , Chang Yeon Kim , Ho Joon Lee
IPC: H01L27/15 , H01L25/07 , H01L25/075 , H01L27/12 , H01L27/32 , H01L33/08 , H01L33/10 , H01L33/30 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/46 , H01L33/50 , H01L33/58 , H01L33/60 , H10K59/35 , H10K59/38 , G09G3/32 , H01L25/16 , H01L29/45 , H01L33/00 , H01L33/22 , H01L33/24 , H10K59/32 , H10K102/00
CPC classification number: H01L27/156 , H01L25/0756 , H01L33/10 , H01L33/30 , H01L33/405 , H01L33/504 , G09G3/32 , H01L25/167 , H01L27/1214 , H01L29/45 , H01L33/0008 , H01L33/0093 , H01L33/08 , H01L33/22 , H01L33/24 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/42 , H01L33/46 , H01L33/58 , H01L33/60 , H10K59/32 , H10K59/35 , H10K59/352 , H10K59/353 , H10K59/38 , H10K2102/00
Abstract: A light emitting diode (LED) stack for a display including a substrate, a first LED stack disposed on the substrate, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, a first color filter interposed between the first LED stack and the second LED stack, and a second color filter interposed between the second LED stack and the third LED stack, in which the second LED stack and the third LED stack are configured to transmit light generated from the first LED stack to the outside, and the third LED stack is configured to transmit light generated from the second LED stack to the outside.
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公开(公告)号：US11973104B2
公开(公告)日：2024-04-30
申请号：US17826127
申请日：2022-05-26
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chung Hoon Lee , Jong Hyeon Chae , Seong Gyu Jang , Ho Joon Lee
CPC classification number: H01L27/156 , G09G3/2003 , G09G3/32 , H01L25/0756 , H01L33/30 , H01L33/405 , H01L33/504 , G09G2300/0452 , G09G2310/0267 , G09G2310/08 , H01L25/167
Abstract: A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a first portion of the first LED sub-unit, and a third LED sub-unit disposed on a second portion of the second LED sub-unit, in which each of the first, second, and third LED sub-units includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, light generated from the first LED sub-unit is configured to be emitted outside of the light emitting diode pixel through a third portion of the first LED sub-unit different from the first portion, and light generated from the second LED sub-unit is configured to be emitted outside of the light emitting diode pixel through a fourth portion of the second LED sub-unit different from the second portion.
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公开(公告)号：US11967605B2
公开(公告)日：2024-04-23
申请号：US16676711
申请日：2019-11-07
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chung Hoon Lee
CPC classification number: H01L27/15 , H01L33/382 , H01L33/44 , H01L33/505 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
Abstract: A light emitting device including a light emitting structure including a plurality of light emitting parts, a dielectric structure disposed outside the light emitting structure, and a plurality of pads disposed on a first surface of the light emitting structure and electrically coupled with the light emitting parts, in which outer sidewalls of the pads are disposed inside an outer sidewall of the light emitting structure and an outer sidewall of the dielectric structure, at least one of the pads extends to a first surface of the dielectric structure, and the first surface of the dielectric structure is coplanar with the first surface of the light emitting structure.
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公开(公告)号：US11923348B2
公开(公告)日：2024-03-05
申请号：US17963147
申请日：2022-10-10
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Seong Gyu Jang , Ho Joon Lee , Jong Hyeon Chae , Chung Hoon Lee
CPC classification number: H01L25/13 , H01L25/0756 , H01L33/38 , H01L33/405 , H01L33/505 , H01L33/0093 , H01L33/20 , H01L33/62
Abstract: A light emitting diode pixel for a display includes a first subpixel including a first LED sub-unit, a second subpixel including a second LED sub-unit, a third subpixel including a third LED sub-unit, and a bonding layer overlapping the first, second, and third subpixels, in which each of the first, second, and third LED sub-units includes a first type of semiconductor layer and a second type of semiconductor layer, each of the first, second, and third LED sub-units is disposed on a different plane, and light generated from the second subpixel is configured to be emitted to an outside of the light emitting diode pixel by passing through a lesser number of LED sub-units than light generated from the first subpixel and emitted to the outside.
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