公开(公告)号：US10133176B2

公开(公告)日：2018-11-20

申请号：US14825792

申请日：2015-08-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu Seol ,  Sangwon Kim ,  Hyeonjin Shin ,  Seongjun Park ,  Yeonchoo Cho

IPC: G03F7/11 ,  G03F7/09

Abstract: A hardmask composition includes a plurality of graphene nanosheets doped with boron (B) and/or nitrogen (N) and a solvent. A size of the graphene nanosheet may be in a range of about 5 nm to about 1000 nm. The hardmask composition may include an aromatic ring-containing material.

公开(公告)号：US10074737B2

公开(公告)日：2018-09-11

申请号：US14932392

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jinseong Heo ,  Seongjun Park

IPC: H01L23/00 ,  H01L29/778 ,  H01L29/66 ,  H01L29/16

CPC classification number: H01L29/778 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/66477 ,  H01L29/78603 ,  H01L29/78684 ,  H01L51/0541

Abstract: A method of manufacturing a flexible device including a two-dimensional (2D) material, e.g., graphene, includes forming a dielectric layer on a first substrate, forming a two-dimensional (2D) material layer on the dielectric layer; forming a pattern in the 2D material layer, forming a second substrate on the dielectric layer and the 2D material layer, the first substrate including a flexible material, removing the first substrate, and forming a source electrode, a drain electrode, and a gate electrode on the dielectric layer.

公开(公告)号：US20180197956A1

公开(公告)日：2018-07-12

申请号：US15825344

申请日：2017-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin Shin ,  Dongwook Lee ,  Seongjun Park ,  Kiyoung Lee ,  Eunkyu Lee ,  Sanghyun Jo ,  Jinseong Heo

IPC: H01L29/16 ,  H01L31/0352 ,  H01L27/146 ,  H01L27/15 ,  H01L27/144 ,  H01L29/12

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US09929238B2

公开(公告)日：2018-03-27

申请号：US15494035

申请日：2017-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongjun Jeong ,  Seongjun Park ,  Yunseong Lee

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/786 ,  H01L27/088 ,  H01L21/8234 ,  H01L21/02 ,  H01L21/04

CPC classification number: H01L29/1606 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02527 ,  H01L21/02603 ,  H01L21/042 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/467 ,  H01L21/823412 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/66037 ,  H01L29/66045 ,  H01L29/775 ,  H01L29/778 ,  H01L29/78696 ,  H01L51/0045 ,  Y10S977/755 ,  Y10S977/888

Abstract: Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of forming the graphene nanopattern may include forming a graphene layer on a substrate, forming a block copolymer layer on the graphene layer and a region of the substrate exposed on at least one side of the graphene layer, forming a mask pattern from the block copolymer layer by removing one of a plurality of first region and a plurality of second regions of the block copolymer, and patterning the graphene layer in a nanoscale by using the mask pattern as an etching mask. The block copolymer layer may be formed to directly contact the graphene layer. The block copolymer layer may be formed to directly contact a region of the substrate structure that is exposed on at least one side of the graphene layer.

公开(公告)号：US09721794B2

公开(公告)日：2017-08-01

申请号：US14697150

申请日：2015-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwon Kim ,  Seongjun Park

IPC: H01L21/033 ,  H01L21/02 ,  C08K3/38 ,  C09D7/12 ,  C08K3/30 ,  C08K5/56 ,  C08K3/22 ,  G03F7/09 ,  H01L21/311

CPC classification number: H01L21/0332 ,  C08K3/22 ,  C08K3/30 ,  C08K3/38 ,  C08K5/56 ,  C08K2003/2255 ,  C08K2003/3009 ,  C08K2003/385 ,  C09D7/61 ,  C09D7/63 ,  G03F7/094 ,  H01L21/02112 ,  H01L21/02282 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02584 ,  H01L21/02628 ,  H01L21/31122 ,  H01L21/31144

Abstract: Example embodiments relate to a hardmask composition and/or a method of forming a fine pattern by using the hardmask composition, wherein the hardmask composition includes at least one of a two-dimensional layered nanostructure and a precursor thereof, and a solvent, and an amount of the at least one of a two-dimensional layered nanostructure and the precursor is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition.

公开(公告)号：US11329223B2

公开(公告)日：2022-05-10

申请号：US17060884

申请日：2020-10-01

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Minhyun Lee ,  Seongjun Park ,  Hyunjae Song ,  Hyeonjin Shin ,  Kibum Kim ,  Sanghun Lee ,  Yunho Kang

IPC: H01L45/00 ,  H01L21/768 ,  G11C13/00

Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.

公开(公告)号：US11177352B2

公开(公告)日：2021-11-16

申请号：US16749367

申请日：2020-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong Heo ,  Kiyoung Lee ,  Seongjun Park

IPC: H01L29/16 ,  H01L29/66 ,  H01L29/778 ,  H01L33/26 ,  H01L29/267 ,  H01L29/08 ,  H01L29/786 ,  H01L29/24 ,  H01L45/00 ,  H01L31/028 ,  H01L31/113 ,  H01L29/417 ,  H01L33/04 ,  H01L33/34

Abstract: Example embodiments relate to a graphene device, methods of manufacturing and operating the same, and an electronic apparatus including the graphene device. The graphene device is a multifunctional device. The graphene device may include a graphene layer and a functional material layer. The graphene device may have a function of at least one of a memory device, a piezoelectric device, and an optoelectronic device within the structure of a switching device/electronic device. The functional material layer may include at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, a piezoelectric material, a light emission material, and a photoactive material.

公开(公告)号：US11158849B2

公开(公告)日：2021-10-26

申请号：US16015835

申请日：2018-06-22

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Minhyun Lee ,  Seongjun Park ,  Hyunjae Song ,  Hyeonjin Shin ,  Ki-Bum Kim ,  Yunhho Kang ,  Sanghun Lee

IPC: H01M4/36 ,  H01M10/0525 ,  H01M4/133 ,  H01M4/587 ,  H01M4/38 ,  H01M10/0562 ,  H01M10/0585 ,  H01M10/0566 ,  H01M4/70 ,  H01M4/62 ,  H01M4/1393 ,  B82Y30/00 ,  H01M4/02 ,  H01M4/66

Abstract: Provided are lithium ion batteries including a nano-crystalline graphene electrode. The lithium ion battery includes a cathode on a cathode current collector, an electrolyte layer on the cathode, an anode on the electrolyte layer, and an anode current collector on the anode. The anode and the cathode include a plurality of grains having a size in a range from about 5 nm to about 100 nm. The cathode has a double bonded structure in which a carbon of the graphene is combined with oxygen.

公开(公告)号：US10910794B2

公开(公告)日：2021-02-02

申请号：US15962600

申请日：2018-04-25

Applicant: Samsung Electronics Co., Ltd. ,  President and Fellows of Harvard College

Inventor： Jinseong Heo ,  Minhyun Lee ,  Seongjun Park ,  Philip Kim ,  Hongkun Park ,  Donhee Ham

IPC: H01S5/30 ,  H01S5/10 ,  H01S5/042 ,  H01S5/323 ,  H01L33/00 ,  H01S5/062

Abstract: A light-emitting device includes a substrate including a photonic cavity and configured to function as a gate, an active layer including a two-dimensional material, a first conductive contact, and a second conductive contact. The wavelength range of light generated by the light-emitting device may be narrowed based on the photonic cavity being included in the substrate, and the intensity and wavelength range of the generated light may be controlled based on the substrate functioning as a gate.

公开(公告)号：US10790230B2

公开(公告)日：2020-09-29

申请号：US16257171

申请日：2019-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae Song ,  Seunggeol Nam ,  Yeonchoo Cho ,  Seongjun Park ,  Hyeonjin Shin ,  Jaeho Lee

IPC: H01L23/48 ,  H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: Example embodiments relate to a layer structure having a diffusion barrier layer, and a method of manufacturing the same. The layer structure includes first and second material layers and a diffusion barrier layer therebetween. The diffusion barrier layer includes a nanocrystalline graphene (nc-G) layer. In the layer structure, the diffusion barrier layer may further include a non-graphene metal compound layer or a graphene layer together with the nc-G layer. One of the first and second material layers is an insulating layer, a metal layer, or a semiconductor layer, and the remaining layer may be a metal layer.