公开(公告)号：US06419754B1

公开(公告)日：2002-07-16

申请号：US09376426

申请日：1999-08-18

申请人： Simon Chooi ,  Mei Sheng Zhou

发明人： Simon Chooi ,  Mei Sheng Zhou

IPC分类号： C23G116

CPC分类号： G01N21/31 ,  C23F1/00 ,  G01N21/85 ,  H01L21/32134 ,  H01L22/26 ,  Y10T436/12

摘要： An endpoint detection system for copper stripping using a colorimetric analysis of the change in concentration of a component is described. Wet copper stripping chemicals are used to strip copper from a wafer whereby an eluent is produced. The eluent is continuously analyzed by colorimetric analysis for the presence of copper. The copper stripping process is stopped when the presence of copper is no longer detected. Also novel compounds or chemicals for use in an endpoint detection system for copper stripping using a colorimetric analysis of the change in concentration of the novel compounds or chemicals are described. A composition of matter that serves as an indicator of the presence of copper by colorimetric analysis comprises: 1) Fast Sulphon Black F indicator and an ammonium ion-containing solution or 2) a complexing agent, comprising a diamine, an amine macrocycle, or a monoamine.

摘要翻译： 描述了使用对组分浓度变化的比色分析进行铜剥离的端点检测系统。 湿铜剥离化学品用于从晶片剥离铜，从而产生洗脱液。 通过比色分析连续分析洗脱液是否存在铜。 当不再检测到铜的存在时，铜剥离过程停止。 还描述了用于铜剥离终点检测系统的新型化合物或化学品，其使用对新化合物或化学品的浓度变化的比色分析。 通过比色分析作为铜存在指标的物质组成包括：1）快速磺化黑F指示剂和含铵离子的溶液或2）络合剂，其包含二胺，胺大环化合物或 单胺

公开(公告)号：US06309982B1

公开(公告)日：2001-10-30

申请号：US09803188

申请日：2001-03-12

申请人： Simon Chooi ,  Yi Xu ,  Yakub Aliyu ,  Mei-Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Ho

发明人： Simon Chooi ,  Yi Xu ,  Yakub Aliyu ,  Mei-Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Ho

IPC分类号： H01L2131

CPC分类号： H01L21/02129 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/3115 ,  H01L21/31612 ,  H01L21/31625

摘要： A method for reducing copper diffusion into an inorganic dielectric layer adjacent to a copper structure by doping the inorganic dielectric layer with a reducing agent (e.g. phosphorous, sulfur, or both) during plasma enhanced chemical vapor deposition. The resulting doped inorganic dielectric layer can reduce copper diffusion without a barrier layer reducing fabrication cost and cycle time, as well as reducing RC delay.

摘要翻译： 一种通过在等离子体增强化学气相沉积期间通过用还原剂（例如磷，硫或两者）掺杂无机介电层来减少铜扩散到与铜结构相邻的无机电介质层中的方法。 所得到的掺杂无机介电层可以减少铜扩散而无需阻挡层降低制造成本和循环时间，并减少RC延迟。

公开(公告)号：US06265321B1

公开(公告)日：2001-07-24

申请号：US09550264

申请日：2000-04-17

申请人： Simon Chooi ,  Mei-Sheng Zhou ,  Yi Xu

发明人： Simon Chooi ,  Mei-Sheng Zhou ,  Yi Xu

IPC分类号： H01L2100

CPC分类号： H01L21/7682 ,  H01L21/76807

摘要： A method for reducing RC delay in integrated circuits by lowering the dielectric constant of the intermetal dielectric material between metal interconnects or metal damascene interconnects is described. The dielectric constant of the intermetal dielectric is lowered by introducing air into the intermetal dielectric between metal interconnections. An air bridge comprising a porous material, preferably amorphous silicon, porous silicon oxide, or porous silsesquioxane, is deposited over a layer containing a reactive organic material. An oxygen plasma treatment or an anisotropic etching through the pores in the air bridge layer removes at least a portion of the reactive material, leaving air plugs within the intermetal dielectric.

摘要翻译： 描述了通过降低金属互连或金属镶嵌互连之间的金属间电介质材料的介电常数来减小集成电路中的RC延迟的方法。 通过在金属互连之间的金属间电介质中引入空气来降低金属间电介质的介电常数。 包括多孔材料，优选非晶硅，多孔氧化硅或多孔倍半硅氧烷的空气桥被沉积在含有反应性有机材料的层上。 通过空气桥接层中的孔的氧等离子体处理或各向异性蚀刻去除至少一部分反应性材料，从而将空气塞留在金属间电介质内。

公开(公告)号：US06261955B1

公开(公告)日：2001-07-17

申请号：US09618262

申请日：2000-07-18

申请人： Yakub Aliyu ,  Simon Chooi ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

发明人： Yakub Aliyu ,  Simon Chooi ,  Mei Sheng Zhou ,  John Leonard Sudijono ,  Subhash Gupta ,  Sudipto Ranendra Roy ,  Paul Kwok Keung Ho ,  Yi Xu

IPC分类号： H01L2144

CPC分类号： H01L21/02046 ,  C23F1/12 ,  H01L21/02079 ,  Y10S438/906

摘要： An effective copper decontamination method in the fabrication of integrated circuits is achieved. An organic-based HFACAC decontamination compound in vapor phase is sprayed over elemental copper found on equipment or tools or as a spill wherein the compound reacts with all of the elemental copper and forms a volatile compound that can be flushed away thereby completing copper decontamination.

摘要翻译： 实现了集成电路制造中有效的铜去污方法。 蒸气相中的基于有机的HFACAC去污化合物喷洒在设备或工具上发现的元素铜上，或作为溢出物喷洒，其中化合物与所有元素铜反应并形成可被冲洗掉的挥发性化合物，从而完成铜去污。

公开(公告)号：US06132521A

公开(公告)日：2000-10-17

申请号：US467132

申请日：1999-12-20

申请人： Subhash Gupta ,  Simon Chooi ,  Mei Sheng Zhou ,  Paul Ho

发明人： Subhash Gupta ,  Simon Chooi ,  Mei Sheng Zhou ,  Paul Ho

IPC分类号： C11D3/20 ,  C11D3/39 ,  C23G5/032 ,  B08B3/04

CPC分类号： C11D3/2072 ,  C11D3/2003 ,  C11D3/2093 ,  C11D3/3945 ,  C23G5/032 ,  Y10S134/902

摘要： A method of cleaning elemental copper, cobalt, or nickel from the surface of equipment hardware without corroding or damaging the equipment parts and surfaces in the event of wafer breakage and non-wafer breakage is described. A solution includes an alkyldione peroxide, a stabilizing agent, and alcohols is used to oxidize the metal and form soluble complexes which are removed by the cleaning solution. Also, a alkyldione peroxide solution for cleaning elemental copper, cobalt, or nickel from the surface of equipment hardware in the event of wafer breakage and non-wafer breakage is provided.

摘要翻译： 描述了从设备硬件表面清除元素铜，钴或镍的方法，而不会在晶片断裂和非晶片断裂的情况下腐蚀或损坏设备部件和表面。 溶液包括烷基二酮过氧化物，稳定剂，醇用于氧化金属并形成由清洗溶液除去的可溶性络合物。 此外，提供了在晶片断裂和非晶片断裂的情况下从设备硬件的表面清除元素铜，钴或镍的烷基二氧化碳过氧化物溶液。

公开(公告)号：US6117777A

公开(公告)日：2000-09-12

申请号：US902847

申请日：1997-07-30

申请人： Mei-Sheng Zhou ,  Simon Chooi

发明人： Mei-Sheng Zhou ,  Simon Chooi

IPC分类号： B24B37/04 ,  B24B49/12 ,  H01L21/3105 ,  H01L21/66 ,  H01L21/00

CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  H01L21/31053 ,  H01L22/26

摘要： A method for fabricating a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a planarizable layer. The planarizable layer has a lower residual portion of the planarizable layer and an upper removable portion of the planarizable layer, where one of the lower residual portion of the planarizable layer and the upper removable portion of the planarizable layer has a colorant incorporated therein. The colorant is positioned at a location which assists in monitoring and controlling an endpoint of a chemical mechanical polish (CMP) planarizing method employed in planarizing the planarizable layer. There is then planarized through the chemical mechanical polish (CMP) planarizing method the planarizable layer while employing the colorant concentration to determine the endpoint of the chemical mechanical polish (CMP) planarizing method.

摘要翻译： 一种用于制造微电子制造的方法。 首先提供了在微电子制造中使用的衬底。 然后在衬底上形成可平面化的层。 可平面化层具有可平坦化层的较低残余部分和可平面化层的上部可去除部分，其中可平面化层的下部剩余部分和可平面化层的上部可去除部分中的一个具有并入其中的着色剂。 着色剂位于有助于监测和控制用于平坦化可平面化层的化学机械抛光（CMP）平面化方法的端点的位置。 然后通过化学机械抛光（CMP）平面化方法将平坦化层平坦化，同时使用着色剂浓度来确定化学机械抛光（CMP）平面化方法的终点。

公开(公告)号：US06057240A

公开(公告)日：2000-05-02

申请号：US55437

申请日：1998-04-06

申请人： Mei-Sheng Zhou ,  Jian-Hui Ye ,  Simon Chooi ,  Young-Tong Tsai

发明人： Mei-Sheng Zhou ,  Jian-Hui Ye ,  Simon Chooi ,  Young-Tong Tsai

IPC分类号： C11D1/04 ,  C11D1/68 ,  C11D1/70 ,  C11D3/30 ,  C11D11/00 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H05K3/06 ,  H01R13/502 ,  C11D9/00

CPC分类号： H01L21/02071 ,  B82Y10/00 ,  B82Y30/00 ,  C11D11/0047 ,  C11D3/30 ,  H01L21/31138 ,  H01L21/32136 ,  H05K3/064 ,  C11D1/04 ,  H05K2203/0793 ,  H05K2203/095

摘要： A method for forming a patterned metal layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a blanket metal layer. There is then formed over the blanket metal layer a patterned photoresist layer. There is then etched through use of a plasma etch method while employing the patterned photoresist layer as a photoresist etch mask layer the blanket metal layer to form a patterned metal layer. The patterned metal layer so formed has a metal impregnated carbonaceous polymer residue layer formed upon a sidewall of the patterned metal layer. There is then stripped from the patterned metal layer the patterned photoresist layer through use of an oxygen containing plasma while simultaneously oxidizing the metal impregnated carbonaceous polymer residue layer to form an oxidized metal impregnated polymer residue layer upon the sidewall of the patterned metal layer. There is then stripped from the sidewall of the patterned metal layer the oxidized metal impregnated polymer residue layer while employing an aqueous alkyl ammonium hydroxide based solution. The aqueous alkyl ammonium hydroxide based solution has incorporated therein a surfactant capable of forming a monolayer adsorbed upon the sidewall of the patterned metal layer.

摘要翻译： 一种用于在微电子制造中形成图案化金属层的方法。 首先提供了在微电子制造中使用的衬底。 然后在衬底上形成覆盖金属层。 然后在覆盖金属层上形成图案化的光致抗蚀剂层。 然后通过使用等离子体蚀刻方法蚀刻，同时使用图案化的光致抗蚀剂层作为光刻胶蚀刻掩模层，覆盖金属层以形成图案化的金属层。 如此形成的图案化金属层具有形成在图案化金属层的侧壁上的金属浸渍碳质聚合物残余层。 然后通过使用含氧等离子体从图案化的金属层剥离图案化的光刻胶层，同时对金属浸渍的碳质聚合物残余层进行氧化，以在图案化金属层的侧壁上形成氧化金属浸渍的聚合物残余物层。 然后从图案化金属层的侧壁剥离氧化金属浸渍的聚合物残余物层，同时使用基于烷基氢氧化铵的水溶液。 基于烷基氢氧化铵的水溶液溶液中加入了能够形成单层吸附在图案化金属层的侧壁上的表面活性剂。

公开(公告)号：US6040243A

公开(公告)日：2000-03-21

申请号：US398292

申请日：1999-09-20

申请人： Jianxun Li ,  Simon Chooi ,  Mei-Sheng Zhou

发明人： Jianxun Li ,  Simon Chooi ,  Mei-Sheng Zhou

IPC分类号： H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76844 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76831

摘要： A method of fabricating damascene vias has been achieved. Diffusion of copper into dielectric layers due to overetch of the passivation layer is eliminated by a barrier layer. The method can be used to form dual damascene interconnects. Copper traces through an isolation layer are provided overlying a semiconductor substrate. A passivation layer is deposited overlying the copper traces and the isolation layer. A dielectric layer is deposited. A cap layer is deposited. The cap layer and the dielectric layer are patterned to expose the top surface of the passivation layer and to form trenches for the damascene vias. A barrier layer is deposited overlying the passivation layer, the dielectric layer, and the cap layer. The barrier layer is etched though to expose the top surfaces of the cap layer and the passivation layer. The barrier layer isolates the sidewalls of the trenches. The passivation layer is etched through to complete damascene vias. The barrier layer prevents copper sputtering onto the dielectric layer during the step of etching through the passivation layer.

摘要翻译： 已经实现了制造大马士革过孔的方法。 通过阻挡层消除由于钝化层的过蚀刻而将铜扩散到电介质层中。 该方法可用于形成双镶嵌互连。 通过隔离层的铜迹线设置在半导体衬底上。 沉积在铜迹线和隔离层上的钝化层。 沉积介电层。 沉积盖层。 将盖层和电介质层图案化以暴露钝化层的顶表面并形成用于大马士革过孔的沟槽。 覆盖钝化层，电介质层和覆盖层的阻挡层被沉积。 蚀刻阻挡层以暴露盖层和钝化层的顶表面。 阻挡层隔离沟槽的侧壁。 蚀刻钝化层以完成大马士革过孔。 在蚀刻通过钝化层的步骤期间，阻挡层防止铜溅射到电介质层上。

公开(公告)号：US5792692A

公开(公告)日：1998-08-11

申请号：US912323

申请日：1997-08-18

申请人： Jian-Xun Li ,  Simon Chooi ,  Mei-Sheng Zhou

发明人： Jian-Xun Li ,  Simon Chooi ,  Mei-Sheng Zhou

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/8242 ,  H01L27/108 ,  H01L21/20

CPC分类号： H01L27/10852 ,  H01L21/31116 ,  H01L27/10817 ,  H01L28/87 ,  H01L28/91 ,  H01L28/88

摘要： A process for fabricating a large surface area, storage node structure, for a DRAM device, has been developed. The storage node structure is comprised of a lower level polysilicon structure, exhibiting a "twin hammer tree" shape, and connected to an upper polysilicon level, exhibiting a "branch" type shape. The fabrication process used to create this storage node structure, features various deposition procedures, used for insulator and polysilicon layers, and various anisotropic and isotropic, dry etch procedures, as well as wet etch procedures, used for creation of the "twin hammer tree" shaped structure.

摘要翻译： 已经开发了用于制造用于DRAM器件的大表面积，存储节点结构的工艺。 存储节点结构包括呈现“双锤树”形状的较低级多晶硅结构，并连接到上多晶硅层，呈现“分支”型形状。 用于创建这种存储节点结构的制造工艺，具有用于绝缘体和多晶硅层的各种沉积工艺以及用于创建“双锤树”的各种各向异性和各向同性的干蚀刻工艺以及湿式蚀刻工艺， 形结构。

公开(公告)号：US20050090037A1

公开(公告)日：2005-04-28

申请号：US10978198

申请日：2004-10-29

申请人： Yakub Aliyu ,  Simon Chooi ,  Mei Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy

发明人： Yakub Aliyu ,  Simon Chooi ,  Mei Zhou ,  John Sudijono ,  Subhash Gupta ,  Sudipto Roy

IPC分类号： H01L21/44 ,  H01L21/50 ,  H01L21/60 ,  H01L23/48 ,  H01L23/485 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L24/81 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/1147 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.