公开(公告)号：US20180181071A1

公开(公告)日：2018-06-28

申请号：US15831453

申请日：2017-12-05

申请人： The Swatch Group Research and Development Ltd

发明人： Vladislav SPASSOV

IPC分类号： G04B37/22 ,  G04B45/00 ,  C23C14/24 ,  C23C14/06

CPC分类号： G04B37/223 ,  A44C27/006 ,  B44C3/02 ,  C23C14/0015 ,  C23C14/022 ,  C23C14/0641 ,  C23C14/0652 ,  C23C14/0676 ,  C23C14/24 ,  C23C28/042 ,  C23C28/044 ,  G04B19/12 ,  G04B45/0076 ,  G04B47/04 ,  G04D3/0069 ,  G04D3/0074 ,  G04D3/0092

摘要： Method for coloured coating on a watchmaking or jewellery external part component, comprising at least one visible surface prepared in advance on a substrate, this method comprising a step of vacuum-deposition of at least one main layer of titanium and silicon nitride (Ti, Sik)Nx or of titanium and silicon nitride doped with oxygen (Ti, Sik)NxOy.

公开(公告)号：US20180143528A1

公开(公告)日：2018-05-24

申请号：US15501659

申请日：2016-08-02

申请人： HOYA CORPORATION

发明人： Osamu NOZAWA ,  Hiroaki SHISHIDO ,  Takenori KAJIWARA

IPC分类号： G03F1/32 ,  C23C14/00 ,  C23C14/34 ,  G03F7/20 ,  H01L21/027

CPC分类号： G03F1/32 ,  C23C14/06 ,  C23C14/0652 ,  G03F1/26 ,  G03F7/70 ,  H01L21/0274

摘要： Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness.The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.8 and extinction coefficient k of 2.0 or more; the upper layer has refractive index n of 2.3 or more and extinction coefficient k of 1.0 or less; and the upper layer has more thickness than the lower layer.

公开(公告)号：US09856554B2

公开(公告)日：2018-01-02

申请号：US14343125

申请日：2011-09-07

申请人： Hans-Georg Lotz

发明人： Hans-Georg Lotz

IPC分类号： C23C14/34 ,  C23C14/10 ,  C23C14/06 ,  C23C14/08 ,  H01J37/34 ,  G02B1/10 ,  G02B1/16

CPC分类号： C23C14/10 ,  C23C14/06 ,  C23C14/0652 ,  C23C14/08 ,  C23C14/3464 ,  G02B1/105 ,  G02B1/16 ,  G06F2203/04103 ,  H01J37/3429

摘要： A process for manufacturing a transparent body for use in a touch panel is provided. The process includes: The process includes depositing a first transparent layer stack over a substrate with a first silicon-containing dielectric film, a second silicon-containing dielectric film, and a third silicon-containing dielectric film. The first and the third silicon-containing dielectric films have a low refractive index and the second silicon-containing dielectric film has a high refractive index. The process further includes depositing a transparent conductive film in a manner such that the first transparent layer stack and the transparent conductive film are disposed over the substrate in this order. At least one of the first silicon-containing dielectric film, the second silicon-containing dielectric film, the silicon-containing third dielectric film, or the transparent conductive film is deposited by sputtering from a target. Further thereto, a deposition apparatus (300) for manufacturing a transparent body for use in a touch panel and a transparent body for use in a touch panel are provided.

公开(公告)号：US09816316B2

公开(公告)日：2017-11-14

申请号：US15213476

申请日：2016-07-19

申请人： Guardian Industries Corp.

发明人： Jingyu Lao ,  Philip J. Lingle ,  Brent Boyce ,  Bernd Disteldorf ,  Richard Blacker

IPC分类号： B32B15/04 ,  B32B17/06 ,  E06B9/24 ,  C03C17/36 ,  E06B3/67 ,  C03C17/245 ,  C03C17/34 ,  C23C14/06 ,  C23C14/08

CPC分类号： E06B9/24 ,  B32B17/06 ,  B32B2255/20 ,  B32B2255/28 ,  B32B2307/304 ,  B32B2307/412 ,  B32B2307/416 ,  C03C17/2453 ,  C03C17/3435 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3626 ,  C03C17/3634 ,  C03C17/3644 ,  C03C17/3652 ,  C03C17/366 ,  C03C17/3681 ,  C03C2217/21 ,  C03C2217/211 ,  C03C2217/212 ,  C03C2217/216 ,  C03C2217/219 ,  C03C2217/256 ,  C03C2217/281 ,  C03C2217/70 ,  C03C2218/154 ,  C03C2218/156 ,  C23C14/0652 ,  C23C14/086 ,  E06B3/6715 ,  E06B2009/2417 ,  Y10T428/265

摘要： A low-E coating supported by a glass substrate, the coating from the glass substrate outwardly including at least the following layers: a dielectric layer of or including silicon nitride; a high index layer having a refractive index of at least 2.1; another dielectric layer of or including silicon nitride; a layer comprising zinc oxide; an infrared (IR) reflecting layer, wherein the coating includes only one IR reflecting layer; and an overcoat including (i) a layer comprising tin oxide and (ii) a layer comprising silicon nitride located over and contacting the layer comprising tin oxide. An IG unit including the coating may have a visible transmission of at least 70%.

公开(公告)号：US20170141185A1

公开(公告)日：2017-05-18

申请号：US14941665

申请日：2015-11-16

申请人： Inotera Memories, Inc.

发明人： Tieh-Chiang WU ,  Shing-Yih SHIH

IPC分类号： H01L49/02 ,  H01L23/48 ,  H01L21/768 ,  H01L21/3065

CPC分类号： H01L28/91 ,  C23C14/0652 ,  C23C14/08 ,  C23C14/10 ,  C23C14/16 ,  C23C16/06 ,  C23C16/345 ,  C23C16/402 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76865 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76895 ,  H01L21/76898 ,  H01L23/481 ,  H01L28/90 ,  H01L29/66181 ,  H01L29/92

摘要： A semiconductor structure and a method of fabricating thereof are provided. The method includes following steps. A substrate with an upper surface and a lower surface is received. A first recess extending from the upper surface to the lower surface is formed and the first recess has a first depth. A second recess extending from the upper surface to the lower surface is formed and the second recess has a second depth less than the first depth. A first conducting layer is formed in the first recess and the second recess. A first insulating layer is formed over the first conducting layer. A second conducting layer is formed over the first insulating layer and isolated from the first conducting layer with the first insulating layer. The substrate is thinned from the lower surface to expose the second conducting layer in the first recess.

公开(公告)号：US20170076923A1

公开(公告)日：2017-03-16

申请号：US15362986

申请日：2016-11-29

申请人： Tosoh SMD, Inc.

发明人： Yongwen Yuan ,  Eugene Y. Ivanov ,  Yang Liu ,  Phil Frausto ,  Weifang Miao

IPC分类号： H01J37/34 ,  B08B3/04 ,  B08B3/08 ,  C23C14/34

CPC分类号： H01J37/3426 ,  B08B3/04 ,  B08B3/08 ,  C23C14/0652 ,  C23C14/165 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3435

摘要： A sputter target assembly comprising a Si target and a backing plate is provided wherein the backing plate is bonded to the target. The Si target comprises a smooth, mirror-like surface and has a surface roughness of less than about 15.0 Angstroms. Methods are provided for producing silicon target/backing plate assemblies wherein a silicon blank is processed to remove scratches from the blank surface resulting in a mirror like surface on the target, and a surface roughness of 15.0 Angstroms or less. The method comprises a first and second cleaning step with the first step being performed before the scratch removal step, and the second step being performed after the scratch removal.

摘要翻译： 提供了包括Si靶和背板的溅射靶组件，其中所述背板结合到靶。 Si靶包括光滑的镜面表面，其表面粗糙度小于约15.0埃。 提供了用于生产硅靶/背板组件的方法，其中处理硅坯以从坯料表面去除划痕，导致靶上的镜像表面，以及15.0埃或更小的表面粗糙度。 该方法包括第一和第二清洁步骤，其中第一步骤在刮除去除步骤之前进行，并且第二步骤在除去刮痕之后进行。

公开(公告)号：US20170069819A1

公开(公告)日：2017-03-09

申请号：US15352639

申请日：2016-11-16

申请人： The Government of the United States of America, as represented by the Secretary of the Navy

发明人： Xiao Liu ,  Daniel R. Queen ,  Frances Hellman ,  Thomas H. Metcalf ,  Matthew R. Abernathy ,  Glenn G. Jernigan

IPC分类号： H01L39/24 ,  H01L39/02

CPC分类号： H01L39/2493 ,  B32B15/00 ,  C21D1/40 ,  C21D1/773 ,  C21D2201/03 ,  C22C45/00 ,  C23C14/06 ,  C23C14/0605 ,  C23C14/0652 ,  C23C14/14 ,  C23C14/541 ,  H01B3/02 ,  H01B19/04 ,  H01L21/02112 ,  H01L21/02123 ,  H01L39/02 ,  H01L39/025 ,  H01L39/24

摘要： A hydrogen-free amorphous dielectric insulating film having a high material density and a low density of tunneling states. The film is prepared by deposition of a dielectric material on a substrate having a high substrate temperature Tsub under high vacuum and at a controlled low deposition rate. In one embodiment, the film is amorphous silicon while in another embodiment the film is amorphous germanium.

摘要翻译： 具有高材料密度和低密度隧道状态的无氢非晶介质绝缘膜。 通过在高真空和受控的低沉积速率下在具有高衬底温度Tsub的衬底上沉积介电材料来制备膜。 在一个实施例中，膜是非晶硅，而在另一个实施例中，膜是无定形锗。

公开(公告)号：US09556069B2

公开(公告)日：2017-01-31

申请号：US13873721

申请日：2013-04-30

申请人： Centre Luxembourgeois de Recherches pour le Verre et la Ceramique S.A. (C.R.V.C.)

发明人： Guillermo Benito Gutierrez ,  Javier Unquera Algorri ,  Angel Alvarez Rodriguez

IPC分类号： C03C17/36 ,  C23C14/06 ,  C23C14/10 ,  G02B5/08 ,  G02B27/00 ,  C03C17/38 ,  C23C28/00

CPC分类号： G02B1/10 ,  C03C17/36 ,  C03C17/3602 ,  C03C17/3618 ,  C03C17/3626 ,  C03C17/3649 ,  C03C17/3652 ,  C03C17/3663 ,  C03C17/38 ,  C23C14/06 ,  C23C14/0652 ,  C23C14/0682 ,  C23C14/10 ,  C23C28/30 ,  G02B1/14 ,  G02B5/085 ,  G02B5/0858 ,  G02B5/0875 ,  G02B27/0006

摘要： Certain example embodiments of this invention relate to sputtered aluminum second surface mirrors with permanent protective coatings optionally provided thereto, and/or methods of making the same. A mirror coating supported by a substrate may include, for example, first and second silicon-inclusive layers sandwiching a metallic or substantially metallic layer including aluminum, and an optional layer including Ni and/or Cr in direct contact with the metallic or substantially metallic layer comprising aluminum. A protective paint is disposed directly over and contacting an outermost layer of the mirror coating. The protective paint, once applied and cured, is adapted to survive seven day exposure to an 85 degree C. temperature at 85% relative humidity, as well as seven day exposure to a 49 degree C. temperature at 100% relative humidity.

摘要翻译： 本发明的某些示例性实施例涉及具有可选地提供给其的永久性保护涂层的溅射铝第二表面反射镜和/或其制备方法。 由衬底支撑的镜面涂层可以包括例如夹持包括铝的金属或基本金属层的第一和第二含硅包层，以及包括与金属或基本金属层直接接触的Ni和/或Cr的任选层 包括铝。 保护漆直接设置在镜面涂层的最外层上并与其接触。 一旦施加和固化，保护漆适于在相对湿度为85％的85摄氏度的温度下暴露7天，以及在100％相对湿度下暴露于49℃的7天。

公开(公告)号：US09469896B2

公开(公告)日：2016-10-18

申请号：US14126849

申请日：2012-06-14

申请人： Alessandro Antonaia ,  Salvatore Esposito ,  Maria Luisa Addonizio ,  Antonio Guglielmo

发明人： Alessandro Antonaia ,  Salvatore Esposito ,  Maria Luisa Addonizio ,  Antonio Guglielmo

IPC分类号： C23C14/06 ,  C23C14/00 ,  C23C14/34 ,  F24J2/48 ,  C04B35/581 ,  C04B35/584 ,  F24J2/46 ,  C23C14/14 ,  G02B1/10 ,  G02B5/08

CPC分类号： G02B1/10 ,  C04B35/581 ,  C04B35/584 ,  C04B2235/3886 ,  C04B2235/75 ,  C04B2235/79 ,  C04B2235/80 ,  C23C14/0042 ,  C23C14/0617 ,  C23C14/0641 ,  C23C14/0652 ,  C23C14/14 ,  C23C14/34 ,  C23C14/3464 ,  F24S70/20 ,  F24S70/30 ,  G02B5/085 ,  Y02E10/40

摘要： A thin-film spectrally selective coating for receiver tube of vacuumed type for use in thermodynamic solar installations and operating both at medium temperature (up to 400° C.) and at high temperature (up to 550° C.), coating where the optically absorbing layer is a multilayer of cermet material of type: WyN—AlNx or MoyN—AlNx, material prepared with reactive co-sputtering technique from an Al target and a W or Mo target, process conducted under a transition regimen, under PFM (Plasma Emission Monitoring) or CVM (Cathode Voltage Monitoring) monitoring for the sole Al target, with inletting near the Al target of a N2 amount adequate for obtainment of a high-transparency, high growth rate sub-stoichiometric ceramic AlN and with inletting near the W or Mo target of a N2 amount adequate for obtainment of the sole W2N or Mo2N phase, phase very stable at high temperature, such as to make the cermet material as close as possible to the formulation W2N—AlNx or Mo2N—AlNx (with x comprised between 0.90 and 1.00, preferably 0.95) and, therefore, cermet material employable at least up to the temperature of 550° C.

摘要翻译： 用于热力学太阳能装置的真空吸收管的薄膜光谱选择性涂层，并且在中等温度（高达400℃）和高温（高达550℃））下操作，其中光学 吸收层是由WyN-AlNx或MoyN-AlNx类型的金属陶瓷材料的多层，由Al靶和W或Mo靶的反应共溅射技术制备的材料，在过渡方案下进行的PFM（等离子体发射 监测）或CVM（阴极电压监测）监测为唯一的Al靶，进入靠近Al靶的N2量足以获得高透明度，高生长速率的亚化学计量陶瓷AlN，并进入W或 具有足够用于获得唯一的W2N或Mo2N相的N 2量的Mo靶，在高温下非常稳定的相，例如使金属陶瓷材料尽可能接近制剂W2N-AlNx或Mo2N-AlNx（与x compr 在0.90和1.00之间，优选为0.95），因此，金属陶瓷材料可以使用至少高达550℃的温度

公开(公告)号：US20160282522A1

公开(公告)日：2016-09-29

申请号：US15033226

申请日：2014-10-29

申请人： SAINT-GOBAIN GLASS FRANCE

发明人： Michele SCHIAVONI ,  Marie-Virginie EHRENSPERGER

IPC分类号： G02B5/02 ,  C23C14/06 ,  G02B1/11 ,  G03B21/62 ,  G02B5/22 ,  C23C14/35 ,  C23C14/18

CPC分类号： G02B5/0294 ,  B32B17/10036 ,  B32B17/10174 ,  B32B17/10761 ,  B32B17/10788 ,  C23C14/0641 ,  C23C14/0652 ,  C23C14/185 ,  C23C14/35 ,  G02B1/11 ,  G02B5/0278 ,  G02B5/22 ,  G03B21/62 ,  B32B17/10 ,  B32B2367/00

摘要： A transparent layered element includes two outer layers that each have a smooth outer main surface and are constituted of dielectric materials having substantially the same refractive index. The layered element also includes a central layer inserted between the outer layers. The central layer is formed either by one or more layers made of metallic material or made of dielectric material having a refractive index different from that of the outer layers. All of the contact surfaces between two adjacent layers of the layered element are textured and parallel to one another. A ratio of a total reflection of the layered element on a side of a first outer layer in a given wavelength range to a total reflection of the layered element on a side of a second outer layer in the given wavelength range is greater than or equal to 1.5.

摘要翻译： 透明层状元件包括两个外层，每个外层具有光滑的外主表面，并且由具有基本上相同折射率的介电材料构成。 分层元件还包括插入在外层之间的中心层。 中心层由一层或多层由金属材料制成或由具有不同于外层的折射率的电介质材料制成。 分层元件的两个相邻层之间的所有接触表面是纹理的并且彼此平行。 在给定波长范围内的第一外层的一侧的层叠元件的全反射率与给定波长范围内的第二外层的一侧的层叠元件的全反射率的比率大于或等于 1.5。