公开(公告)号：US07700918B2

公开(公告)日：2010-04-20

申请号：US12076355

申请日：2008-03-17

申请人： Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

发明人： Makoto Ezumi ,  Yoichi Ose ,  Akira Ikegami ,  Hideo Todokoro ,  Tatsuaki Ishijima ,  Takahiro Sato ,  Ritsuo Fukaya ,  Kazunari Asao

IPC分类号： G01N23/00 ,  H01J37/28 ,  G01R19/00

CPC分类号： H01J37/265 ,  G01N23/2251 ,  H01J37/21 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/0041 ,  H01J2237/216 ,  H01J2237/244 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2817

摘要： The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.

摘要翻译： 本发明的目的是提供一种理想的用于减少带电粒子束装置中的聚焦偏移，放大波动和测量长度误差的带电粒子束照射方法。 为了实现这些目的，在本发明中公开了一种用于在由装载机构加载的情况下用静电静电计测量样品上的电位分布的方法。 公开了另一种测量样品上特定点的局部电荷的方法，并且从这些局部静电电荷中分离和测量广域静电电荷量。 公开了另一种用于基于通过测量至少两个带电粒子光学条件下的指定点处的静电电荷量而发现的波动来校正测量长度值或放大倍率的方法，然后使用带电粒子束来测量测量尺寸的波动 由于在指定位置处的静电电荷的波动而发生。

公开(公告)号：US20100078554A1

公开(公告)日：2010-04-01

申请号：US12240048

申请日：2008-09-29

申请人： Hong Xiao

发明人： Hong Xiao

IPC分类号： G01N23/225 ,  H01J37/26

CPC分类号： H01J37/26 ,  G01R31/024 ,  G01R31/307 ,  G11C11/401 ,  G11C2029/0403 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/2814 ,  H01L22/12

摘要： The present invention discloses a structure and a method for determining a defect in integrated circuit manufacturing process. Test keys are designed for the structure to be the interlaced arrays of grounded and floating conductive cylinders, and the microscopic image can be predicted to be an interlaced pattern of bright voltage contrast (BVC) and dark voltage contrast (DVC) signals for a charged particle beam imaging system. The system can detect the defects by comparing patterns of the detected VC signals and the predicted VC signals.

摘要翻译： 本发明公开了一种用于确定集成电路制造工艺中的缺陷的结构和方法。 测试键设计用于结构为接地和浮动导电圆柱体的隔行阵列，并且微观图像可以预测为带电粒子的亮电压对比度（BVC）和暗电压对比度（DVC）信号的隔行扫描模式 光束成像系统。 该系统可以通过比较检测到的VC信号和预测的VC信号的模式来检测缺陷。

公开(公告)号：US20090289185A1

公开(公告)日：2009-11-26

申请号：US12133298

申请日：2008-06-04

申请人： Juergen FROSIEN ,  Dieter WINKLER ,  Udo WEIGEL ,  Stefan GRIMM

发明人： Juergen FROSIEN ,  Dieter WINKLER ,  Udo WEIGEL ,  Stefan GRIMM

IPC分类号： G01N23/00

CPC分类号： H01J37/08 ,  H01J27/26 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/061 ,  H01J2237/0807 ,  H01J2237/244 ,  H01J2237/24514 ,  H01J2237/24535 ,  H01J2237/24564 ,  H01J2237/24578 ,  H01J2237/2594 ,  H01J2237/2623 ,  H01J2237/2816 ,  H01J2237/2817

摘要： A focused ion beam device is described comprising a gas field ion source with an analyzer for analyzing and classifying the structure of a specimen, a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip, the emitter tip has a base tip comprising a first material and a supertip comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission centre of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.

摘要翻译： 描述了一种聚焦离子束装置，其包括气体离子源，其具有用于分析和分类样品结构的分析器，用于根据分析仪的分析来控制和/或改变样品的结构的控制器，发射器尖端 发射极尖端具有包括第一材料和超高压头的基座尖端，所述第一材料和第一材料包括不同于所述第一材料的材料，其中所述超高压是单个原子尖端，并且所述基座尖端是单晶基底尖端。 此外，聚焦离子束装置具有探针电流控制和样品充电控制。 提供了一种操作聚焦离子束装置的方法，包括在超高压的单个发射中心和电极之间施加电压，向发射极尖端供应气体，分析和分类样品的结构，以及控制样品的结构 。

公开(公告)号：US07612570B2

公开(公告)日：2009-11-03

申请号：US11847790

申请日：2007-08-30

申请人： Hiroyuki Suhara

发明人： Hiroyuki Suhara

IPC分类号： G01R31/305

CPC分类号： G01R31/305 ,  G03G15/5037 ,  G03G2215/00033 ,  G03G2215/00054 ,  H01J37/244 ,  H01J37/268 ,  H01J2237/0047 ,  H01J2237/0048 ,  H01J2237/2444 ,  H01J2237/24564 ,  H01J2237/2594

摘要： A surface-potential distribution measuring apparatus includes an electron gun, an electron-beam optical system, an electron-emission panel, a detector, and a control system. The electron-beam optical system is located between the electron gun and a sample, and focuses a beam of electrons emitted from the electron gun to the surface of the sample. The electron-emission panel is located near the sample to be collided with at least part of the electrons via the sample, and emits secondary electrons corresponding to the number of collided electrons. The detector detects at least part of the secondary electrons. The control system obtains potential distribution on the surface of the sample based on a detection result obtained by the detector.

摘要翻译： 表面电位分布测量装置包括电子枪，电子束光学系统，电子发射面板，检测器和控制系统。 电子束光学系统位于电子枪和样品之间，并将从电子枪发射的电子束聚焦到样品的表面。 电子发射面板位于样品附近，通过样品与至少部分电子碰撞，并发射对应于碰撞电子数的二次电子。 检测器检测至少部分二次电子。 控制系统根据检测器得到的检测结果，获得样品表面的电位分布。

公开(公告)号：US07547884B2

公开(公告)日：2009-06-16

申请号：US11449650

申请日：2006-06-09

申请人： Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

发明人： Masaki Hasegawa ,  Hiroshi Makino ,  Hikaru Koyama ,  Zhaohui Cheng ,  Hisaya Murakoshi

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： H01J37/026 ,  G01R31/307 ,  H01J37/29 ,  H01J2237/0045 ,  H01J2237/0047 ,  H01J2237/045 ,  H01J2237/2594 ,  H01J2237/2817

摘要： In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.

摘要翻译： 在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。 此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。 狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。 此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。

公开(公告)号：US20080270081A1

公开(公告)日：2008-10-30

申请号：US11742095

申请日：2007-04-30

申请人： Delia R. Bearup ,  Andrew S. Dalton ,  James J. Demarest ,  Loren L. Hahn ,  Bruce J. Redder ,  Francis R. Wallingford

发明人： Delia R. Bearup ,  Andrew S. Dalton ,  James J. Demarest ,  Loren L. Hahn ,  Bruce J. Redder ,  Francis R. Wallingford

IPC分类号： G06F15/00

CPC分类号： G01R31/307 ,  H01J37/268 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/24564 ,  H01J2237/2594

摘要： Non-destructive, below-surface defect rendering of an IC chip using image intensity analysis is disclosed. One method includes providing an IC chip delayered to a selected layer; determining a defect location below a surface of the selected layer using a first image of the IC chip obtained using an CPIT in a first mode; generating a second image of the IC chip with the CPIT in a second mode, the second image representing charged particle signal from the defect below the surface of the selected layer; and rendering the defect by comparing an image intensity of a reference portion of the second image not including the defect with the image intensity of a defective portion of the second image including the defect, wherein the reference portion and the defective portion are of structures expected to be substantially identical.

摘要翻译： 公开了使用图像强度分析的IC芯片的非破坏性的表面下缺陷渲染。 一种方法包括提供延迟到选定层的IC芯片; 使用在第一模式中使用CPIT获得的IC芯片的第一图像来确定所选层的表面下方的缺陷位置; 在第二模式中用CPIT生成IC芯片的第二图像，第二图像表示来自所选层的表面下方的缺陷的带电粒子信号; 并且通过将不包括缺陷的第二图像的参考部分的图像强度与包括缺陷的第二图像的缺陷部分的图像强度进行比较来呈现缺陷，其中参考部分和缺陷部分具有预期的结构 基本相同。

公开(公告)号：US07435956B2

公开(公告)日：2008-10-14

申请号：US11225376

申请日：2005-09-12

申请人： N. William Parker

发明人： N. William Parker

IPC分类号： H01J37/28 ,  H01J37/147

CPC分类号： H01J37/256 ,  H01J9/42 ,  H01J37/09 ,  H01J37/147 ,  H01J37/244 ,  H01J2237/0492 ,  H01J2237/1501 ,  H01J2237/162 ,  H01J2237/188 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/2594 ,  H01J2237/2817

摘要： A charged particle optical system for testing, imaging or inspecting substrates comprises: a charged particle optical assembly configured to produce a line of charged particle beams equally spaced along a main scan axis, each beam being deflectable through a large angle along the main scan axis; and linear detector optics aligned along the main scan axis. The detector optics includes a linear secondary electron detector, a field free tube, voltage contrast plates and a linear backscattered electron detector. The large beam deflection is achieved using an electrostatic deflector for which the exit aperture is larger than the entrance aperture. One embodiment of the deflector includes: two parallel plates with chamfered inner surfaces disposed perpendicularly to the main scan axis; and a multiplicity of electrodes positioned peripherally in the gap between the plates, the electrodes being configured to maintain a uniform electric field transverse to the main scan axis.

摘要翻译： 用于测试，成像或检查基板的带电粒子光学系统包括：带电粒子光学组件，被配置为产生沿主扫描轴等距间隔的带电粒子束线，每个束可沿主扫描轴线以大角度偏转; 以及沿主扫描轴对准的线性检测器光学元件。 检测器光学器件包括线性二次电子检测器，无磁场管，电压对比板和线性背散射电子检测器。 使用静电偏转器实现大的光束偏转，出射孔大于入射孔。 偏转器的一个实施例包括：具有与主扫描轴垂直设置的倒角内表面的两个平行板; 以及多个电极位于板之间的间隙周边，电极被配置为保持横向于主扫描轴的均匀电场。

公开(公告)号：US20080150557A1

公开(公告)日：2008-06-26

申请号：US11957835

申请日：2007-12-17

申请人： Christof BAUR ,  Robert J. FOLARON ,  Adam HARTMAN ,  Philip C. FOSTER ,  Jay C. NELSON ,  Richard E. STALLCUP

发明人： Christof BAUR ,  Robert J. FOLARON ,  Adam HARTMAN ,  Philip C. FOSTER ,  Jay C. NELSON ,  Richard E. STALLCUP

IPC分类号： G01R31/305

CPC分类号： G01N1/28 ,  G01N1/32 ,  G01R31/307 ,  H01J37/3056 ,  H01J2237/20 ,  H01J2237/2008 ,  H01J2237/206 ,  H01J2237/24592 ,  H01J2237/2594 ,  H01J2237/28 ,  H01J2237/2817 ,  H01J2237/31745

摘要： An apparatus including a positioner control device, a measuring device and a control routine. The positioner control device is communicatively coupled to a chamber of a charged particle beam device (CPBD) and is configured to individually manipulate each of a plurality of probes within the CPBD chamber to establish contact between ones of the plurality of probes and corresponding ones of a plurality of contact points of a sample positioned in the CPBD chamber. The measuring device is communicatively coupled to the CPBD and the positioner control device and is configured to perform one of a measurement and a detection of a characteristic associated with one of the plurality of contact points. The control routine is configured to at least partially automate control of at least one of the CPBD, the positioner control device and the measuring device.

摘要翻译： 一种包括定位器控制装置，测量装置和控制程序的装置。 定位器控制装置通信地耦合到带电粒子束装置（CPBD）的腔室，并且被配置为单独地操作CPBD室内的多个探针中的每一个，以建立多个探针中的一个探针和 位于CPBD室中的样品的多个接触点。 测量装置通信地耦合到CPBD和定位器控制装置，并被配置为执行与多个接触点之一相关联的特性的测量和检测中的一个。 控制程序被配置为至少部分地自动化对CPBD，定位器控制装置和测量装置中的至少一个的控制。

公开(公告)号：US20070262254A1

公开(公告)日：2007-11-15

申请号：US11459359

申请日：2006-07-23

申请人： Cheng-Hsun Nien ,  Chuen-Horng Tsai ,  Kun-Ying Shin ,  Wen-Bin Jian

发明人： Cheng-Hsun Nien ,  Chuen-Horng Tsai ,  Kun-Ying Shin ,  Wen-Bin Jian

IPC分类号： H01J37/26

CPC分类号： G01R31/307 ,  H01J2237/2594

摘要： An electron microscope suitable for observing at least one sample is provided. The sample has at least one testing area, and a material of the sample on the testing area is semiconductive or conductive. The electron microscope includes a stage, an electron gun, and at least one probe. The stage is suitable for carrying the sample and the sample is not electrically grounded. The electron gun is suitable for generating an electron beam and accumulating charges on the sample. When the probe contacts with the testing area, the image contrast of the testing area will change. The current through the probe will also change upon contact. Methods have been provided based on these principles to determine “when” and “where” the probe starts to contact the sample surface inside an electron microscope.

摘要翻译： 提供适用于观察至少一个样品的电子显微镜。 样品具有至少一个测试区域，测试区域上的样品材料是半导体或导电的。 电子显微镜包括载物台，电子枪和至少一个探针。 该阶段适用于携带样品，样品不接地。 电子枪适用于产生电子束并在样品上积累电荷。 当探头与测试区域接触时，测试区域的图像对比度将发生变化。 通过探头的电流也将随接触而改变。 已经基于这些原理提供了用于确定探针在电子显微镜内开始与样品表面接触的“何时”和“在哪里”的方法。

公开(公告)号：US20070222464A1

公开(公告)日：2007-09-27

申请号：US11704228

申请日：2007-02-09

申请人： Toshifumi Honda ,  Takehiro Hirai

发明人： Toshifumi Honda ,  Takehiro Hirai

IPC分类号： G01R31/305

CPC分类号： G01R31/307 ,  G01R31/2884 ,  H01J37/265 ,  H01J37/28 ,  H01J37/304 ,  H01J2237/221 ,  H01J2237/24564 ,  H01J2237/2487 ,  H01J2237/2594 ,  H01J2237/2817 ,  H01J2237/30416

摘要： In a traditional method for automatically obtaining high-magnification images of defects by using an electron microscope for defect-reviewing of a semiconductor wafer, high-magnification images of a voltage contrast changing part are obtained in the case of defects generating voltage contrast change, this made difficult to observe defects themselves generating voltage contrast change. In the present invention, based on energy of secondary electron to be detected, after obtaining two types of images, namely an image making voltage contrast conspicuous easily, and an image not making it easily, and acquiring a shape change area adjacent to a voltage contrast change area based on this area as a defect location, a high-magnification image can automatically be obtained.

摘要翻译： 在通过使用电子显微镜自动获得高倍率图像的传统方法中，通过使用电子显微镜对半导体晶片进行缺陷检查，在产生电压对比度变化的缺陷的情况下，获得电压对比度变化部分的高倍率图像， 难以观察缺陷本身产生电压对比度变化。 在本发明中，基于被检测的二次电子的能量，在获得两种类型的图像之后，即容易形成明显的图像形成电压对比度，以及不容易进行图像的图像，并且获取与电压对比相邻的形状变化区域 基于该区域的变化区域作为缺陷位置，可以自动获得高倍率图像。