公开(公告)号：US07939872B2

公开(公告)日：2011-05-10

申请号：US12079757

申请日：2008-03-28

Applicant: Jong-Cheol Lee ,  Sang-Yeol Kang ,  Ki-Vin Lim ,  Hoon-Sang Choi ,  Eun-Ae Chung

Inventor： Jong-Cheol Lee ,  Sang-Yeol Kang ,  Ki-Vin Lim ,  Hoon-Sang Choi ,  Eun-Ae Chung

IPC: H01L29/51

CPC classification number: H01L21/022 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/31641 ,  H01L21/31645 ,  H01L27/10852 ,  H01L28/56 ,  H01L29/511

Abstract: A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.

Abstract translation: 一种多介电膜，其包括至少一个作为由锆 - 铪氧化物构成的复合膜的第一电介质膜和至少一个作为由非晶态金属氧化物构成的金属氧化物膜的第二电介质膜。 相邻的电介质膜由不同的材料制成。

公开(公告)号：US07923381B2

公开(公告)日：2011-04-12

申请号：US12171711

申请日：2008-07-11

Applicant: Kie Y. Ahn ,  Leonard Forbes

Inventor： Kie Y. Ahn ,  Leonard Forbes

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02194 ,  C23C16/40 ,  C23C16/45531 ,  C23C16/45553 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3142 ,  H01L21/31604 ,  H01L21/31641 ,  H01L29/513 ,  H01L29/517

Abstract: A dielectric film containing Zr—Sn—Ti—O and methods of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Films of Zr—Sn—Ti—O may be formed in a self-limiting growth process.

Abstract translation: 含有Zr-Sn-Ti-O的电介质膜和制造这种电介质膜的方法产生可靠的电介质层，该电介质层的等效氧化物厚度比使用SiO 2可获得的薄。 可以在自限制生长工艺中形成Zr-Sn-Ti-O膜。

公开(公告)号：US20110064642A1

公开(公告)日：2011-03-17

申请号：US12953106

申请日：2010-11-23

Applicant: Naomu Kitano ,  Takashi Nakagawa ,  Toru Tatsumi

Inventor： Naomu Kitano ,  Takashi Nakagawa ,  Toru Tatsumi

IPC: C01B21/00

CPC classification number: H01L29/42324 ,  C23C14/0676 ,  C23C14/225 ,  C23C14/3464 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02194 ,  H01L21/02266 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31604 ,  H01L21/318 ,  H01L29/4234 ,  H01L29/513 ,  H01L29/7881

Abstract: The present invention provides a method of manufacturing a dielectric film having a high permittivity. An embodiment of the present invention is a method of manufacturing, on a substrate, a dielectric film including a metallic oxynitride containing an element A made of Hf or a mixture of Hf and Zr, an element B made of Al, and N and O. The manufacturing method includes: a step of forming a metallic oxynitride whose mole fractions of the element A, the element B, and N expressed as B/(A+B+N) has a range of 0.015≦(B/(A+B+N))≦0.095 and N/(A+B+N) has a range of 0.045≦(N/(A+B+N)) and a mole fraction O/A of the element A and O has a range expressed as 1.0

Abstract translation: 本发明提供具有高介电常数的电介质膜的制造方法。 本发明的一个实施方式是在基板上制造包含含有由Hf或Hf和Zr的混合物构成的元素A的金属氮氧化物的电介质膜，由Al构成的元素B和N和O. 该制造方法包括：形成表示为B /（A + B + N）的元素A，元素B和N的摩尔分数的金属氮氧化物的范围为0.015＆lt; 1EE的工序;（B /（A + B + N））＆nlE; 0.095和N /（A + B + N）的范围为0.045＆nlE;（N /（A + B + N）），元素A和O的摩尔分数O / 表示为1.0 <（O / A）<2.0的范围，具有非结晶结构; 以及在具有非结晶结构的金属氮氧化物上在700℃以上进行退火处理以形成具有80％以上立方晶结合比例的结晶相的金属氧氮化物的工序。

公开(公告)号：US20110020999A1

公开(公告)日：2011-01-27

申请号：US12895535

申请日：2010-09-30

Applicant: Noel Rocklein ,  Chris M. Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

Inventor： Noel Rocklein ,  Chris M. Carlson ,  Dave Peterson ,  Cunyu Yang ,  Praveen Vaidyanathan ,  Vishwanath Bhat

IPC: H01L21/02 ,  H01L21/31 ,  H01L21/283

CPC classification number: H01L21/28273 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

Abstract: Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.

Abstract translation: 一些实施例包括电介质结构。 这些结构包括彼此直接相对的第一和第二部分。 第一部分可以包含第一相和第二相的均匀混合物。 第一相可以具有大于或等于25的介电常数，并且第二相可以具有小于或等于20的介电常数。第二部分可以是完全是具有大于或等于20的介电常数的单一组成， 等于25.一些实施例包括包含上述类型的电介质结构的电气部件，例如电容器和晶体管。 一些实施方案包括形成电介质结构的方法，并且一些实施方案包括形成电组件的方法。

公开(公告)号：US07867919B2

公开(公告)日：2011-01-11

申请号：US11608286

申请日：2006-12-08

Applicant: Kie Y. Ahn ,  Leonard Forbes

Inventor： Kie Y. Ahn ,  Leonard Forbes

IPC: H01L21/469 ,  H01L21/31

CPC classification number: H01L21/28273 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/28282 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31616 ,  H01L29/517

Abstract: Lanthanum-metal oxide dielectric layers and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices and systems. In an embodiment, a lanthanum aluminum oxide dielectric layer is formed using a trisethylcyclopentadionatolanthanum precursor and/or a trisdipyvaloylmethanatolanthanum precursor.

Abstract translation: 镧金属氧化物介电层和制造这种电介质层的方法提供了用于各种电子设备和系统的各种结构的绝缘层。 在一个实施方案中，使用三乙基环戊二氢镧镧前体和/或三二硫代戊酰甲烷镧前体形成氧化镧铝氧化物介电层。

公开(公告)号：US20100209598A1

公开(公告)日：2010-08-19

申请号：US12705587

申请日：2010-02-13

Applicant: Chongying Xu ,  Weimin Li ,  Thomas M. Cameron

Inventor： Chongying Xu ,  Weimin Li ,  Thomas M. Cameron

IPC: B05D5/12 ,  C23C16/00

CPC classification number: H01G4/1209 ,  C23C16/40 ,  C23C16/4488 ,  C23C16/45553 ,  H01G4/008 ,  H01G4/33 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/28562 ,  H01L21/3141 ,  H01L21/31604

Abstract: Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.

Abstract translation: 用于在微电子器件基底上用于气相沉积（例如原子层沉积（ALD））含钌膜的原位四氧化钌的装置和方法。 可以根据需要通过钌或二氧化钌与氧气或臭氧等氧气反应来生成四氧化钌。 在一个实施方案中，由此产生的四氧化钌与锶有机金属前体一起被用于具有极高平滑度和纯度的钌酸锶薄膜的原子层沉积。

公开(公告)号：US20100171089A1

公开(公告)日：2010-07-08

申请号：US12725753

申请日：2010-03-17

Applicant: Brian A. VAARTSTRA

Inventor： Brian A. VAARTSTRA

IPC: H01L45/00 ,  H01L29/92

CPC classification number: H01L21/02178 ,  C23C16/40 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/3115 ,  H01L21/3162 ,  H01L27/11

Abstract: A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.

Abstract translation: 使用气相沉积工艺在衬底，特别是半导体衬底或衬底组件上形成（以及用于形成）金属掺杂的氧化铝层的方法。

公开(公告)号：US07696549B2

公开(公告)日：2010-04-13

申请号：US11297015

申请日：2005-12-08

Applicant: Ramamoorthy Ramesh

Inventor： Ramamoorthy Ramesh

IPC: H01L29/72

CPC classification number: B81B3/0018 ,  H01L21/02194 ,  H01L21/02203 ,  H01L21/31691 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/56

Abstract: A functional perovskite cell formed on a silicon substrate layer and including a functional layer of bismuth ferrite (BiFeO3 or BFO) sandwiched between two electrode layers. An optional intermediate template layer, for example, of strontium titanate allows the bismuth ferrite layer to be crystallographically aligned with the silicon substrate layer. Other barrier layers of platinum or an intermetallic alloy produce a polycrystalline BFO layer. The cell may be configured as a non-volatile memory cell or a MEMS structure respectively depending upon the ferroelectric and piezoelectric character of BFO. Lanthanum substitution in the BFO increases ferroelectric performance. The films may be grown by MOCVD using a heated vaporizer.

Abstract translation: 一种功能性钙钛矿电池，其形成在硅衬底层上，并且包括夹在两个电极层之间的铋铁氧体（BiFeO 3或BFO）的功能层。 可选的中间模板层例如钛酸锶允许铋铁氧体层与硅衬底层晶体学对准。 铂或金属间化合物的其它阻挡层产生多晶BFO层。 可以根据BFO的铁电和压电特性分别将单元配置为非易失性存储单元或MEMS结构。 BFO中的镧取代增加了铁电性能。 可以使用加热蒸发器通过MOCVD生长膜。

公开(公告)号：US07666801B2

公开(公告)日：2010-02-23

申请号：US12248544

申请日：2008-10-09

Applicant: Brian A. Vaartstra ,  Timothy A. Quick

Inventor： Brian A. Vaartstra ,  Timothy A. Quick

IPC: H01L21/469

CPC classification number: H01L21/02271 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/31683 ,  H01L28/40

Abstract: A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.

Abstract translation: 使用气相沉积工艺和一种或多种包括氨基硅烷配体的前体化合物在基底，特别是半导体衬底或衬底组件上形成（以及用于形成）金属氧化物层的方法。

公开(公告)号：US20100029054A1

公开(公告)日：2010-02-04

申请号：US12577624

申请日：2009-10-12

Applicant: Kie Y. Ahn ,  Leonard Forbes

Inventor： Kie Y. Ahn ,  Leonard Forbes

IPC: H01L21/31 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L21/0228 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/02318 ,  H01L21/28194 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/3141 ,  H01L21/31637 ,  H01L21/31645 ,  H01L29/4908 ,  H01L29/517

Abstract: A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film structured as one or more monolayers.

Abstract translation: 包含铪钽氧化物膜的介电层和制造这种电介质层的方法产生用于各种电子器件的介电层。 实施例包括用于电容器，晶体管，存储器件和具有包含以一个或多个单层构成的铪钽氧化物膜的电介质层的电子系统的结构。