Abstract:
The invention provides a lead titanate coating and a preparing method thereof. According to the method, mixed powder is sprayed on the surface of a matrix, and through polarization, the lead titanate coating is acquired. The mixed powder comprises PbTiO3 powder, PbO powder and Al powder. Lead titanate (PbTiO3) is a kind of ferroelectric material, and can be used for preparing a piezoelectric sensor. Besides, the PbO powder and the Al powder are added, so that the piezoelectric property of the lead titanate coating can be improved. Since the lead titanate coating prepared by the present invention can be combined with the matrix closely and the intensity of piezoelectric signal is high, it can be widely applied to mechanical parts, such as a piston ring, a cylinder, a gear, and the like, to dynamically monitor the service situations of the parts better.
Abstract:
Provided is a piezoelectric element including: a first electrode; a piezoelectric layer which is provided over the first electrode; and a second electrode provided on a side of the piezoelectric layer opposite to the first electrode, in which the second electrode includes a first layer which is provided on the piezoelectric layer side, and a second layer which is provided on a side of the first layer opposite to the piezoelectric layer, and the second layer does not contain platinum and covers an end portion of the first layer.
Abstract:
A method of forming an acoustic resonator includes forming a seed layer on a first electrode layer, forming a piezoelectric layer directly on a surface of the seed layer, and forming a second electrode layer on the piezoelectric layer. The piezoelectric layer includes multiple crystals of piezoelectric material, and the seed layer causes crystal axis orientations of the crystals to be substantially perpendicular to the surface of the seed layer.
Abstract:
A piezoelectric thin film is manufactured by sequentially executing: a step of coating a substrate by applying a coating solution containing an organic solvent and a piezoelectric thin film precursor to form a coating layer; a step of evaporating the organic solvent from the coating layer in a windless environment to obtain a dried coating layer containing the piezoelectric thin film precursor; and a step of heating the dried coating layer to form a piezoelectric thin film from the dried coating layer containing the piezoelectric thin film precursor.
Abstract:
A method of heating includes a process of forming a layer to be heated on one surface of a light absorption layer; and a process of heating the light absorption layer by irradiating light onto the other surface of the light absorption layer. The other surface of the light absorption layer is a surface opposite to the one surface of the light absorption layer.
Abstract:
A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.
Abstract:
Provided are a resonator and a method of fabricating the same. The resonator may include a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a control layer disposed on the second electrode and having a frame with an uneven surface.
Abstract:
A semiconductor device, a piezoelectronic transistor (PET) device, and a method of fabricating the PET device are described. The method includes forming a first stack of dielectric layers, forming a first metal layer over the first stack, forming a piezoelectric (PE) material on the first metal layer, and forming a second metal layer on the PE material. The method also includes forming a piezoresistive (PR) element on the second metal layer through a gap in a first membrane formed a distance d above the second metal layer.
Abstract:
A method for manufacturing a piezoelectric film wafer includes a first processing step for carrying out an ion etching on a KNN piezoelectric film formed on a substrate by using a gas containing Ar, and a second processing step for carrying out a reactive ion etching by using a mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing step.
Abstract:
The present disclosure is drawn to a thin film stack, which includes a substrate, a metal layer, and an adhesive layer comprising a blend of from 3 at % to 94 at % indium oxide, from 3 at % to 94 at % gallium oxide, and from 3 at % to 94 at % zinc oxide. The adhesive layer is adhered between the substrate and the metal layer.