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    METHOD FOR GENERATING ASSIST FEATURES USING MACHINE LEARNING MODEL
    83.
    发明公开
    METHOD FOR GENERATING ASSIST FEATURES USING MACHINE LEARNING MODEL 审中-公开

    公开(公告)号：US20240256976A1

    公开(公告)日：2024-08-01

    申请号：US18565759

    申请日：2022-06-10

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Jun TAO ,  Yu CAO ,  Christopher Alan SPENCE

    IPC: G06N20/00 ,  G03F1/36

    CPC classification number: G06N20/00 ,  G03F1/36

    Abstract: Described herein is a method of determining assist features for a mask pattern. The method includes obtaining (i) a target pattern comprising a plurality of target features, wherein each of the plurality of target features comprises a plurality of target edges, and (ii) a trained sequence-to-sequence machine leaning (ML) model (e.g., long short term memory, Gated Recurrent Units, etc.) configured to determine sub-resolution assist features (SRAFs) for the target pattern. For a target edge of the plurality of target edges, geometric information (e.g., length, width, distances between features, etc.) of a subset of target features surrounding the target edge is determined. Using the geometric information as input, the ML model generates SRAFs to be placed around the target edge.

    Method, apparatus, and system for wafer grounding
    85.
    发明授权
    Method, apparatus, and system for wafer grounding 有权

    公开(公告)号：US12051562B2

    公开(公告)日：2024-07-30

    申请号：US17753298

    申请日：2020-08-25

    Applicant: ASML Netherlands B.V.

    Inventor： Yixiang Wang ,  Shibing Liu ,  Shanhui Cao ,  Kangsheng Qiu ,  Juying Dou ,  Ying Luo ,  Yinglong Li ,  Qiang Li ,  Ronald Van Der Wilk ,  Jan-Gerard Cornelis Van Der Toorn

    IPC: H01J37/20 ,  H01L21/683

    CPC classification number: H01J37/20 ,  H01L21/6833 ,  H01J2237/0044

    Abstract: Systems and methods for wafer grounding and wafer grounding location adjustment are disclosed. A first method may include receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal; determining a first control parameter using at least the first value; and controlling a characteristic of the electric signal using the first control parameter and the first value. A second method for adjusting a grounding location for a wafer may include terminating an electric connection between the wafer and at least one grounding pin in contact the wafer; adjusting a relative position between the wafer and the grounding pin; and restoring the electric connection between the grounding pin and the wafer. A third method may include causing a grounding pin to penetrate through a coating on the wafer by impact; and establishing an electrical connection between the grounding pin and the wafer.

    Waveguides and manufacturing methods thereof
    86.
    发明授权
    Waveguides and manufacturing methods thereof 有权

    公开(公告)号：US12050392B2

    公开(公告)日：2024-07-30

    申请号：US18072196

    申请日：2022-11-30

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Gerrit Jacobus Hendrik Brussaard ,  Johannes Richard Karl Kohler

    IPC: G02F1/365 ,  G02F1/35

    CPC classification number: G02F1/365 ,  G02F1/3528

    Abstract: A waveguide including: a first section, the first section configured to generate, by a non-linear optical process, a broadened wavelength spectrum of pulsed radiation provided to an input end of the waveguide; a second section, the second section including an output end of the waveguide, the second section configured to exhibit a larger absolute value of group velocity dispersion than the first section; wherein a length of the second section is configured to reduce a peak intensity of one or more peaks in the broadened wavelength spectrum by at least 20%.

    Computational metrology based sampling scheme
    87.
    发明授权
    Computational metrology based sampling scheme 有权

    公开(公告)号：US12044979B2

    公开(公告)日：2024-07-23

    申请号：US18122655

    申请日：2023-03-16

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Wim Tjibbo Tel ,  Yichen Zhang ,  Sarathi Roy

    IPC: G03F7/00 ,  G06F17/18 ,  G06F18/24

    CPC classification number: G03F7/705 ,  G03F7/70633 ,  G06F17/18 ,  G06F18/24

    Abstract: A method for generating metrology sampling scheme for a patterning process, the method including: obtaining a parameter map of a parameter of a patterning process for a substrate; decomposing the parameter map to generate a fingerprint specific to an apparatus of the patterning process and/or a combination of apparatuses of the patterning process; and based on the fingerprint, generating a metrology sampling scheme for a subsequent substrate at the apparatus of the patterning process and/or the combination of apparatuses of the patterning process, wherein the sampling scheme is configured to distribute sampling points on the subsequent substrate so as to improve a metrology sampling density.

    DETERMINING MASK RULE CHECK VIOLATIONS AND MASK DESIGN
    89.
    发明公开
    DETERMINING MASK RULE CHECK VIOLATIONS AND MASK DESIGN 审中-公开

    公开(公告)号：US20240241436A1

    公开(公告)日：2024-07-18

    申请号：US18289384

    申请日：2022-05-10

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Xingyue PENG ,  Rafael C. HOWELL ,  Yen Wen LU ,  Xiaorui CHEN

    IPC: G03F1/84 ,  G03F1/36 ,  G06F30/20

    CPC classification number: G03F1/84 ,  G06F30/20 ,  G03F1/36

    Abstract: Methods and systems for determining a mask rule check violation (MRC) associated with a mask feature using a detector having geometric properties corresponding to the MRC. The detector (e.g., elliptical shaped) is configured to include a curved portion to detect a curvature violation, include an enclosed area (e.g., a fully enclosed area or a partially enclosed area having an opening), include a predefined orientation axis configured to guide relative positioning of the detector with a mask feature, and include a length to detect a critical dimension violation. The orientation axis of the detector is aligned with a normal axis at a location on the mask feature. Based on the orientation axis aligned with the normal axis of the mask feature, an MRC violation is determined corresponding to a region of the mask feature that intersects the enclosed area.

    Determining pattern ranking based on measurement feedback from printed substrate
    90.
    发明授权
    Determining pattern ranking based on measurement feedback from printed substrate 有权

    公开(公告)号：US12038694B2

    公开(公告)日：2024-07-16

    申请号：US18118695

    申请日：2023-03-07

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Youping Zhang ,  Maxime Philippe Frederic Genin ,  Cong Wu ,  Jing Su ,  Weixuan Hu ,  Yi Zou

    IPC: G03F7/00

    CPC classification number: G03F7/705 ,  G03F7/70675

    Abstract: Methods for training a process model and determining ranking of simulated patterns (e.g., corresponding to hot spots). A method involves obtaining a training data set including: (i) a simulated pattern associated with a mask pattern to be printed on a substrate, (ii) inspection data of a printed pattern imaged on the substrate using the mask pattern, and (iii) measured values of a parameter of the patterning process applied during imaging of the mask pattern on the substrate; and training a machine learning model for the patterning process based on the training data set to predict a difference in a characteristic of the simulated pattern and the printed pattern. The trained machine learning model can be used for determining a ranking of hot spots. In another method a model is trained based on measurement data to predict ranking of the hot spots.

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