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    COPOLYMER FORMULATION FOR DIRECTED SELF-ASSEMBLY, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME
    82.
    发明申请
    COPOLYMER FORMULATION FOR DIRECTED SELF-ASSEMBLY, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME 审中-公开
    用于方向自组装的共聚物配方，其制造方法和包含该组合物的制品

    公开(公告)号：US20160251539A1

    公开(公告)日：2016-09-01

    申请号：US15052927

    申请日：2016-02-25

    Applicant: Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials LLC ,  THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

    Inventor： Phillip D. Hustad ,  Peter Trefonas, III ,  Valeriy V. Ginzburg ,  Bongkeun Kim ,  Glenn H. Fredrickson

    IPC: C09D153/00 ,  B05D3/02

    CPC classification number: C09D153/00 ,  G03F7/0002

    Abstract: Disclosed herein is a pattern forming method comprising disposing upon a substrate a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; an additive polymer; where the additive polymer comprises a bottlebrush polymer; and where the bottlebrush polymer comprises a polymer that has a lower or a higher surface energy than the block copolymer; and a solvent; and annealing the composition to facilitate domain separation between the first polymer and the second polymer of the block copolymer to form a morphology of periodic domains formed from the first polymer and the second polymer; where a longitudinal axis of the periodic domains are parallel to the substrate.

    Abstract translation: 本文公开了一种图案形成方法，包括在基底上设置包含嵌段共聚物的组合物; 其中所述嵌段共聚物包含第一聚合物和第二聚合物; 其中嵌段共聚物的第一聚合物和第二聚合物彼此不同，并且嵌段共聚物形成相分离结构; 添加剂聚合物; 其中所述添加剂聚合物包含瓶刷聚合物; 并且其中所述瓶刷聚合物包含具有比所述嵌段共聚物更低或更高表面能的聚合物; 和溶剂; 并且对所述组合物退火以促进所述第一聚合物和所述嵌段共聚物的第二聚合物之间的区域分离，以形成由所述第一聚合物和所述第二聚合物形成的周期性畴的形态; 其中周期性畴的纵轴平行于衬底。

    COPOLYMER FORMULATION FOR DIRECTED SELF ASSEMBLY, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME
    84.
    发明申请
    COPOLYMER FORMULATION FOR DIRECTED SELF ASSEMBLY, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME 有权
    用于方向自组装的共聚物配方，其制造方法和包含其的制品

    公开(公告)号：US20160186003A1

    公开(公告)日：2016-06-30

    申请号：US14944470

    申请日：2015-11-18

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC

    Inventor： Phillip D. Hustad ,  Peter Trefonas, III ,  Shih-Wei Chang

    IPC: C09D153/00

    CPC classification number: C08L53/00 ,  B81C2201/0149 ,  C08L33/12

    Abstract: Disclosed herein is a composition comprising a block copolymer; where the block copolymer comprises a first polymer and a second polymer; where the first polymer and the second polymer of the block copolymer are different from each other and the block copolymer forms a phase separated structure; and an additive polymer; where the additive polymer comprises a reactive moiety that is reacted to a substrate upon which it is disposed; and where the additive polymer comprises a homopolymer that is the chemically and structurally the same as one of the polymers in the block copolymer or where the additive polymer comprises a random copolymer that has a preferential interaction with one of the blocks of the block copolymers.

    Abstract translation: 本文公开了包含嵌段共聚物的组合物; 其中所述嵌段共聚物包含第一聚合物和第二聚合物; 其中嵌段共聚物的第一聚合物和第二聚合物彼此不同，并且嵌段共聚物形成相分离结构; 和添加剂聚合物; 其中所述添加剂聚合物包含与其被置于其上的基底反应的反应性部分; 并且其中所述添加剂聚合物包含与嵌段共聚物中的一种聚合物化学和结构相同的均聚物，或者其中所述添加剂聚合物包含与所述嵌段共聚物嵌段之一具有优先相互作用的无规共聚物。

    MULTIPLE-PATTERN FORMING METHODS
    85.
    发明申请
    MULTIPLE-PATTERN FORMING METHODS 有权
    多模式形成方法

    公开(公告)号：US20160062232A1

    公开(公告)日：2016-03-03

    申请号：US14836050

    申请日：2015-08-26

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

    Inventor： Chang-Young Hong ,  Cheng-Bai Xu ,  Jung Woo Kim ,  Cong Liu ,  Shintaro Yamada ,  Lori Anne Joesten ,  Choong-Bong Lee ,  Phillip D. Hustad ,  James C. Taylor

    IPC: G03F7/00 ,  G03F7/40 ,  G03F7/32 ,  H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/40 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337

    Abstract: Multiple-pattern forming methods are provided. The methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) patternwise exposing the photoresist layer to activating radiation; (d) baking the exposed photoresist layer; (e) contacting the baked photoresist layer with a first developer to form a first resist pattern; (f) treating the first resist pattern with a coating composition comprising an expedient for switching solubility of a sidewall region of the first resist pattern from soluble to insoluble with respect to a second developer that is different from the first developer; and (g) contacting the treated first resist pattern with the second developer to remove portions of the first resist pattern, leaving the solubility-switched sidewall region to form a multiple-pattern. The methods have particular applicability to the semiconductor manufacturing industry for the formation of fine lithographic patterns.

    Abstract translation: 提供了多模式形成方法。 所述方法包括：（a）提供包括一个或多个待图案化层的半导体衬底; （b）在待图案化的一层或多层上形成光致抗蚀剂层，其中光致抗蚀剂层由包含酸性不稳定基团的基质聚合物组成的组合物形成; 光致酸发生器; 和溶剂; （c）将光致抗蚀剂层图案化地曝光成激活辐射; （d）烘烤曝光的光致抗蚀剂层; （e）使烘烤的光致抗蚀剂层与第一显影剂接触以形成第一抗蚀剂图案; （f）用涂料组合物处理所述第一抗蚀剂图案，所述涂料组合物包括相对于不同于所述第一显影剂的第二显影剂将所述第一抗蚀剂图案的侧壁区域的可溶解度从可溶性切换到不溶性的方法; 和（g）使经处理的第一抗蚀剂图案与第二显影剂接触以除去第一抗蚀剂图案的部分，留下溶解度转换侧壁区域以形成多重图案。 该方法对于形成精细光刻图案的半导体制造业具有特别的适用性。

    CATALYST COMPOSITION COMPRISING SHUTTLING AGENT FOR TACTIC/ ATACTIC MULTI-BLOCK COPOLYMER FORMATION
    87.
    发明申请
    CATALYST COMPOSITION COMPRISING SHUTTLING AGENT FOR TACTIC/ ATACTIC MULTI-BLOCK COPOLYMER FORMATION 有权
    包含开关剂的催化剂组合物用于交联/多孔嵌段共聚物形成

    公开(公告)号：US20140350189A1

    公开(公告)日：2014-11-27

    申请号：US14458335

    申请日：2014-08-13

    Applicant: Dow Global Technologies LLC

    Inventor： Phillip D. Hustad

    IPC: C08F4/76 ,  C08F4/52 ,  C08F4/50

    CPC classification number: C08F297/08 ,  C08F4/65908 ,  C08F4/6592 ,  C08F295/00 ,  C08F2410/04 ,  C08F2420/02 ,  C08F110/06 ,  C08F2500/15 ,  C08F10/06 ,  C08F2/38 ,  C08F4/64144 ,  C08F4/65904

    Abstract: Copolymers, especially multi-block copolymer containing therein two or more segments or blocks differing in tacticity, are prepared by polymerizing propylene, 4-methyl-1-pentene, or another C4-8 α-olefin in the presence of a composition comprising the admixture or reaction product resulting from combining: (A) a first metal complex olefin polymerization catalyst, (B) a second metal complex olefin polymerization catalyst capable of preparing polymers differing in tacticity from the polymer prepared by catalyst (A) under equivalent polymerization conditions, and (C) a chain shuttling agent.

    Abstract translation: 共聚物，特别是其中含有两个或更多个立构规整度不同的链段或嵌段的多嵌段共聚物，可通过在包含混合物的组合物存在下聚合丙烯，4-甲基-1-戊烯或其它C 4-8α-烯烃来制备 或（A）第一金属络合物烯烃聚合催化剂，（B）能够在等效聚合条件下制备由催化剂（A）制备的聚合物的立构规整度的第二金属络合物烯烃聚合催化剂，以及 （C）链式穿梭剂。

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