摘要:
An electrostatic chuck includes an array of independently biased conductive chuck elements, an array of sensor-conductor assemblies, and/or a combination of an array of sensor-conductor assemblies and at least one motorized chuck. Conductive chuck elements, either standing alone or embedded in a sensor-conductor assembly, are independently biased electrostatically to compensate for bowing and/or warping of a substrate thereupon so that the substrate can be bonded with a planar surface. A single electrostatic chuck can be employed to reduce the bowing and warping of one of the two substrates to be bonded, or two electrostatic chucks can be employed to minimize the bowing and warping of two substrates to be bonded.
摘要:
Improved nano-electromechanical system devices and structures and systems and techniques for their fabrication. In one embodiment, a structure comprises an underlying substrate separated from first and second anchor points by first and second insulating support points, respectively. The first and second anchor points are joined by a beam. First and second deposition regions overlie the first and second anchor points, respectively, and the first and second deposition regions exert compression on the first and second anchor points, respectively. The compression on the first and second anchor points causes opposing forces on the beam, subjecting the beam to a tensile stress. The first and second deposition regions suitably exhibit an internal tensile stress having an achievable maximum varying with their thickness, so that the tensile stress exerted on the beam depends at least on part on the thickness of the first and second deposition regions.
摘要:
A multivariable solver for proximity correction uses a Jacobian matrix to approximate effects of perturbations of segment locations in successive iterations of a design loop. The problem is formulated as a constrained minimization problem with box, linear equality, and linear inequality constraints. To improve computational efficiency, non-local interactions are ignored, which results in a sparse Jacobian matrix.
摘要:
An electric motor comprises a stator and a rotor rotatably mounted confronting the stator. The rotor has a rotor core which comprises at least a first tooth, a second tooth and a third tooth which are adjacent. Each of the teeth comprises a rib section radially and outwardly extending from a core and a tooth section located at an outer end of the rib section. The angle between the first tooth and the second tooth is n degrees, wherein when the rotor core is rotated n degrees to move the first tooth towards the second tooth, the rotated second tooth does not coincide with the pre-rotated third tooth.
摘要:
A high-voltage, super-voltage and heavy current breaker is formed by combining intelligent optical vacuum breaker modules (21) with phase selection function in series and/or parallel connection. Each vacuum breaker module (21) is connected each other in series after being connected in parallel with a resistance capacitance device or with a resistance capacitance device and a zinc oxide arrester valve plate (22). Tight coupling reactors are connected with several serial branches of the vacuum breaker module (21) simultaneously to achieve parallel connection of several serial branches of the vacuum breaker module (21). The breaker distributes the high-voltage and heavy current into the low voltage and low current serial and parallel vacuum breaker modules (21) to share.
摘要:
An integrated photovoltaic cell and battery device, a method of manufacturing the same and a photovoltaic power system incorporating the integrated photovoltaic cell and battery device. The integrated photovoltaic cell and battery device includes a photovoltaic cell, a battery, and interconnects providing three-dimensional integration of the photovoltaic cell and the battery into an integrated device for capturing and storing solar energy. Also provided is a design structure readable by a machine to simulate, design, or manufacture the above integrated photovoltaic cell and battery device.
摘要:
Scalable transfer-join bonding techniques are provided. In one aspect, a transfer-join bonding method is provided. The method includes the following steps. A first bonding structure is provided having at least one metal pad embedded in an insulator and at least one via in the insulator over the metal pad. The via has tapered sidewalls. A second bonding structure is provided having at least one copper stud adapted to have a taper that complements the tapered sidewalls of the via, such that the via and the copper stud fit together like a lock-and-key. The first bonding structure is bonded to the second bonding structure by way of a metal-to-metal bonding between the metal pad and the copper stud that deforms the copper stud. A transfer-join bonded structure is also provided.
摘要:
Copper (Cu)-to-Cu bonding techniques are provided. In one aspect, a bonding method is provided. The method includes the following steps. A first bonding structure is provided having at least one copper pad embedded in a first insulator and at least one via in the first insulator over the copper pad, wherein the via has tapered sidewalls. A second bonding structure is provided having at least one copper stud embedded in a second insulator, wherein a portion of the copper stud is exposed for bonding and has a domed shape. The first bonding structure is bonded to the second bonding structure by way of a copper-to-copper bonding between the copper pad and the copper stud, wherein the via and the copper stud fit together like a lock-and-key. A bonded structure is also provided.
摘要:
Method of forming a semiconductor device which includes the steps of obtaining a semiconductor substrate having a logic region and an STI region; sequentially depositing layers of high K material, metal gate, first silicon and hardmask; removing the hardmask and first silicon layers from the logic region; applying a second layer of silicon on the semiconductor substrate such that the logic region has layers of high K material, metal gate and second silicon and the STI region has layers of high K material, metal gate, first silicon, hardmask and second silicon. There may also be a second hardmask layer between the metal gate layer and the first silicon layer in the STI region. There may also be a hardmask layer between the metal gate layer and the first silicon layer in the STI region but no hardmask layer between the first and second layers of silicon in the STI region.
摘要:
A device for transmitting digital broadcast signal comprises: at least a first encoding unit, each of which encodes data of a sub-channel with forward error correction encoding; at least a time-domain interleaving unit, each of which receives data output from a first encoding unit and performs interleaving in time-domain on the encoded data; a first multiplexing unit, which multiplexes the interleaved data output from each of the time-domain interleaving unit into Main Service Channel (MSC) data; a second encoding unit, which performs forward error correction encoding on a second set of data to obtain Fast Information Channel (FIC) data; a differential modulating unit, which performs differential modulation on the FIC data by using a first modulation mode and on the MSC data by using a second modulation mode, wherein the modulation level of the first modulation mode is lower than that of the second modulation mode; and a frame generating and transmitting unit, which generates signal unit transmission frames by using differential-modulation symbol sequences generated by the differential modulating unit and transmitting said signal unit transmission frames.