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公开(公告)号：US09240350B2
公开(公告)日：2016-01-19
申请号：US13472329
申请日：2012-05-15
IPC分类号： C03C15/00 , C03C25/68 , C23F1/00 , H01L21/8234 , H01L21/768 , H01L21/02 , H01L21/311 , H01L21/3115 , H01L21/84
CPC分类号： H01L21/823431 , H01L21/02321 , H01L21/31111 , H01L21/31116 , H01L21/31155 , H01L21/76802 , H01L21/76829 , H01L21/76834 , H01L21/845
摘要： A technique for forming 3D structures is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for forming 3D structures. The method may comprise providing a substrate comprising at least two vertically extending fins that are spaced apart from one another to define a trench; depositing a dielectric material in the trench between the at least two vertically extending fins; providing an etch stop layer within the dielectric material, the etch stop layer having a first side and a second opposite side; removing the dielectric material near the first side of the etch stop layer.
摘要翻译： 公开了一种用于形成3D结构的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于形成3D结构的方法。 该方法可以包括提供包括彼此间隔开以限定沟槽的至少两个垂直延伸的翅片的基底; 在所述至少两个垂直延伸的翅片之间的沟槽中沉积电介质材料; 在所述电介质材料内提供蚀刻停止层，所述蚀刻停止层具有第一侧和第二相对侧; 去除蚀刻停止层的第一侧附近的电介质材料。
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公开(公告)号：US09136096B2
公开(公告)日：2015-09-15
申请号：US13560664
申请日：2012-07-27
申请人： Ludovic Godet , Adjin Sarajlic
发明人： Ludovic Godet , Adjin Sarajlic
CPC分类号： H01J37/32422 , C23C14/046 , C23C14/3407 , C23C14/345 , H01J37/32357 , H01J37/32403 , H01J37/32623 , H01J37/32633 , H01J37/32642 , H01J37/3414 , H01J37/3417 , H01J37/3467 , H01J2237/08 , H01J2237/31701
摘要： A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece.
摘要翻译： 公开了一种等离子体处理装置。 等离子体处理装置包括被配置为在具有与工件的前表面相邻的等离子体鞘的处理室中产生等离子体的源和等离子体护套改性剂。 等离子体护套修改器控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。 将金属靶固定到等离子体护套改性剂的背面，以便与等离子体护套改性剂电绝缘，并被电偏置，使得离开等离子体并通过等离子体护套改性剂中的孔的离子被吸引到金属 目标。 这些离子引起金属靶溅射，允许工件的三维金属沉积。
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公开(公告)号：US09062367B2
公开(公告)日：2015-06-23
申请号：US13608709
申请日：2012-09-10
CPC分类号： C23C14/048 , H01J37/32412
摘要： A surface of an insulating workpiece is implanted to form either hydrophobic or hydrophilic implanted regions. A conductive coating is deposited on the workpiece. The coating may be a polymer in one instance. This coating preferentially forms either on the implanted regions if these implanted regions are hydrophilic or on the non-implanted regions if the implanted regions are hydrophobic.
摘要翻译： 植入绝缘工件的表面以形成疏水或亲水注入区域。 导电涂层沉积在工件上。 在一种情况下，涂层可以是聚合物。 如果这些注入区域是亲水的，则该涂层优选地形成在注入区域上，或者如果注入的区域是疏水的，则优选地形成在非注入区域上。
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84.发明授权公开(公告)号：US08974683B2
公开(公告)日：2015-03-10
申请号：US13228625
申请日：2011-09-09
IPC分类号： H01L21/302 , H01L21/027 , H01J37/32 , G03F7/40
CPC分类号： H01L21/0273 , G03F7/40 , H01J37/32422
摘要： A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.
摘要翻译： 一种降低设置在基板上的抗蚀剂材料的表面中的开口中的粗糙度的方法，包括产生具有等离子体鞘和其中的离子的等离子体。 该方法还包括使用等离子体护套改性剂修改限定在等离子体和等离子体护套之间的边界的形状，使得面向抗蚀剂材料的边界的一部分不平行于由衬底的表面限定的平面。 该方法还包括在衬底处于第一位置时提供离子的第一次曝光，该第一曝光包括在相对于衬底的表面的角度范围内跨过具有改变形状的边界加速离子的离子。
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公开(公告)号：US08969181B2
公开(公告)日：2015-03-03
申请号：US13440616
申请日：2012-04-05
IPC分类号： H01L21/205 , H01L21/02 , H01L21/265 , H01L21/266
CPC分类号： H01L21/02658 , H01L21/02381 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L21/26506 , H01L21/26586 , H01L21/266
摘要： Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions into the workpiece. A compound semiconductor is then formed on the workpiece. For example, gallium nitride may be formed on a silicon, silicon carbide, or sapphire workpiece. The width of the implanted regions can be configured to compensate for any shrinkage during annealing.
摘要翻译： 氧，硅，锗，碳或氮被选择性地植入到工件中。 将工件退火以将离子结合到工件中。 然后在工件上形成化合物半导体。 例如，可以在硅，碳化硅或蓝宝石工件上形成氮化镓。 注入区域的宽度可被配置为补偿退火期间的任何收缩。
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公开(公告)号：US08697549B2
公开(公告)日：2014-04-15
申请号：US13587325
申请日：2012-08-16
申请人： Xianfeng Lu , Ludovic Godet , Christopher Hatem , John Hautala
发明人： Xianfeng Lu , Ludovic Godet , Christopher Hatem , John Hautala
IPC分类号： H01L21/20
摘要： An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In one embodiment, the thermoelectric material is made by depositing a porous film onto a substrate, introducing a dopant into the porous film and annealing the porous film to activate the dopant. In other embodiments, additional amounts of dopant may be introduced via subsequent ion implantations of dopant into the deposited porous film.
摘要翻译： 公开了一种制造具有高导电性和低热导率的热电材料的改进方法。 在一个实施例中，通过在衬底上沉积多孔膜，将掺杂剂引入到多孔膜中并退火多孔膜以激活掺杂剂来制造热电材料。 在其它实施方案中，可以通过随后的掺杂剂离子注入到沉积的多孔膜中引入附加量的掺杂剂。
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87.发明授权Enhanced etch and deposition profile control using plasma sheath engineering 有权使用等离子体护套工程的增强蚀刻和沉积轮廓控制公开(公告)号：US08603591B2
公开(公告)日：2013-12-10
申请号：US12645638
申请日：2009-12-23
IPC分类号： H05H1/24
CPC分类号： B44C1/227 , C23C16/045 , C23C16/50 , H01J37/32412 , H01J37/32623 , H01J2237/3344 , H01J2237/3345
摘要： A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
摘要翻译： 使用等离子体处理工具将材料沉积在工件上。 例如，公开了一种用于材料的共形沉积的方法。 在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以沉积各种不同的特征。 在另一个实施例中，使用等离子体处理工具来蚀刻工件。 在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。 通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。
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88.发明授权公开(公告)号：US08592230B2
公开(公告)日：2013-11-26
申请号：US13091289
申请日：2011-04-21
申请人： Deepak A. Ramappa , Ludovic Godet
发明人： Deepak A. Ramappa , Ludovic Godet
IPC分类号： H01L21/00
CPC分类号： H01L21/00 , C23C14/042 , C23C14/48 , C23C16/02 , C23C16/04 , C23C16/50 , H01L31/0682 , H01L31/0747 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of patterning a substrate includes providing a focusing plate adjacent to a plasma chamber containing a plasma, the focusing plate configured to extract ions from the plasma through at least one aperture that provides focused ions towards the substrate. The method further includes directing first ions through the at least one aperture to one or more first regions of the substrate so as to condense first gaseous species provided in ambient of the substrate on the one or more first regions of the substrate.
摘要翻译： 图案化衬底的方法包括提供邻近包含等离子体的等离子体室的聚焦板，该聚焦板被配置为通过至少一个孔向等离子体提取离子，所述孔向衬底提供聚焦离子。 该方法还包括将第一离子引导通过至少一个孔到基底的一个或多个第一区域，以便在衬底的一个或多个第一区域上冷凝在衬底环境中提供的第一气态物质。
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公开(公告)号：US20130064989A1
公开(公告)日：2013-03-14
申请号：US13608709
申请日：2012-09-10
IPC分类号： C23C14/48
CPC分类号： C23C14/048 , H01J37/32412
摘要： A surface of an insulating workpiece is implanted to form either hydrophobic or hydrophilic implanted regions. A conductive coating is deposited on the workpiece. The coating may be a polymer in one instance. This coating preferentially forms either on the implanted regions if these implanted regions are hydrophilic or on the non-implanted regions if the implanted regions are hydrophobic.
摘要翻译： 植入绝缘工件的表面以形成疏水或亲水注入区域。 导电涂层沉积在工件上。 在一种情况下，涂层可以是聚合物。 如果这些注入区域是亲水的，则该涂层优选地形成在注入区域上，或者如果注入的区域是疏水的，则优选地形成在非注入区域上。
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公开(公告)号：US20120295444A1
公开(公告)日：2012-11-22
申请号：US13472329
申请日：2012-05-15
IPC分类号： H01L21/306
CPC分类号： H01L21/823431 , H01L21/02321 , H01L21/31111 , H01L21/31116 , H01L21/31155 , H01L21/76802 , H01L21/76829 , H01L21/76834 , H01L21/845
摘要： A technique for forming 3D structures is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for forming 3D structures. The method may comprise providing a substrate comprising at least two vertically extending fins that are spaced apart from one another to define a trench; depositing a dielectric material in the trench between the at least two vertically extending fins; providing an etch stop layer within the dielectric material, the etch stop layer having a first side and a second opposite side; removing the dielectric material near the first side of the etch stop layer.
摘要翻译： 公开了一种用于形成3D结构的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于形成3D结构的方法。 该方法可以包括提供包括彼此间隔开以限定沟槽的至少两个垂直延伸的翅片的基底; 在所述至少两个垂直延伸的翅片之间的沟槽中沉积电介质材料; 在所述电介质材料内提供蚀刻停止层，所述蚀刻停止层具有第一侧和第二相对侧; 去除蚀刻停止层的第一侧附近的电介质材料。
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