Abstract:
A component includes a carrier and a semiconductor body arranged on the carrier, wherein the semiconductor body has an active layer arranged between the first and second semiconductor layers and is configured to generate, during operation of the component, an electromagnetic radiation that can be coupled out from the component through a first main surface, the first main surface of the component has an electrical contact layer configured to electrically contact a first semiconductor layer and in a plan view the carrier covers the first main surface in places, and in direct vicinity of the electrical contact layer the component includes a shielding structure configured to prevent electromagnetic radiation generated by the active layer from impinging onto the contact layer.
Abstract:
A method of producing optoelectronic semiconductor components includes providing a carrier with a carrier underside and a carrier top, wherein the carrier has a metallic core material and at least on the carrier top a metal layer and following this a dielectric mirror are applied to the core material, forming at least two holes through the carrier, producing a ceramic layer with a thickness of at most 150 μm at least on the carrier underside and in the holes, wherein the ceramic layer includes the core material as a component, applying metallic contact layers to at least subregions of the ceramic layer on the carrier underside and in the holes so that the carrier top electrically connects to the carrier underside through the holes, and applying at least one radiation-emitting semiconductor chip to the carrier top and electrical bonding of the semiconductor chip to the contact layers.
Abstract:
A light-emitting component includes a light-emitting chip and a housing including a plastic body and a reflector, the reflector includes an electrically conductive layer, the light-emitting chip includes a top side and an underside, the underside of the light-emitting chip is arranged on the plastic body, an electrical terminal on the top side of the light-emitting chip electrically conductively connects to the reflector by a bond wire, the underside of the light-emitting chip and the reflector are electrically insulated from one another, a conduction region is provided within the plastic body, thermal conductivity of the conduction region is greater than thermal conductivity of the plastic body, the conduction region adjoins the underside of the light-emitting chip, and the conduction region extends from the side of the plastic body facing the light-emitting chip as far as the side of the plastic body facing away from the light-emitting chip.
Abstract:
A semiconductor device and a method for producing a plurality of semiconductor devices are disclosed. In an embodiment an optoelectronic semiconductor device includes a semiconductor chip having a semiconductor layer sequence with an active region, a radiation exit surface arranged parallel to the active region and a plurality of side faces arranged obliquely or perpendicular to the radiation exit surface. The device further includes a contact track electrically connecting the semiconductor chip to a contact surface configured to externally contact the semiconductor device, a molding and a rear side of the semiconductor chip remote from the radiation exit surface, the rear side being free of a material of the molding, wherein one of the side faces is configured as a mounting side face for fastening of the semiconductor device, and wherein the contact track runs on one of the side faces in places.
Abstract:
An optoelectronic semiconductor component includes an optoelectronic semiconductor that is partly embedded into a shaped body, which is formed from a molding compound that at least partly covers at least two lateral faces and the rear surface of the optoelectronic semiconductor chip. A first contact layer and a second contact layer are arranged on the shaped body and are electrically connected to the optoelectronic semiconductor chip. A mounting face is arranged transversely in relation to the radiation passage face and is provided for mounting the optoelectronic semiconductor component.
Abstract:
An optoelectronic semiconductor component includes an optoelectronic thin-film chip; and a thermally conductive and electrically insulating element, wherein both the thin-film chip and the element are embedded in a molded body, a top surface of the thin-film chip and a bottom surface of the element are not covered by the molded body, the top surface of the thin-film chip is approximately flush with a top surface of the molded body, the bottom surface of the element is approximately flush with a bottom surface of the molded body, the molded body includes a first embedded conductor structure and a second embedded conductor structure, and the first conductor structure and the second conductor structure extends to the bottom surface of the molded body.
Abstract:
A method of producing optoelectronic components includes providing a carrier; arranging optoelectronic semiconductor chips on the carrier; forming a conversion layer for radiation conversion on the carrier, wherein the optoelectronic semiconductor chips are surrounded by the conversion layer; and carrying out a singulation process to form separate optoelectronic components, wherein at least the conversion layer is severed.
Abstract:
An optoelectronic semiconductor component and a method for making an optoelectronic semiconductor component are disclosed. In an embodiment the component includes a carrier including at least one conversion-medium body and a potting body, the potting body surrounding the conversion-medium body at least in places, as seen in plan view, electrical contact structures fitted at least indirectly to the carrier and a plurality of optoelectronic semiconductor chips fitted to a main face of the carrier, the optoelectronic semiconductor chips configured to generate radiation, wherein the conversion-medium body is shaped as a plate, wherein the semiconductor chips are directly mechanically connected to the conversion-medium body, and wherein the conversion-medium body is free of cutouts for the electrical contact structures and is not penetrated by the electrical contact structure.
Abstract:
An optoelectronic semiconductor component includes an optoelectronic semiconductor that is partly embedded into a shaped body, which is formed from a molding compound that at least partly covers at least two lateral faces and the rear surface of the optoelectronic semiconductor chip. A first contact layer and a second contact layer are arranged on the shaped body and are electrically connected to the optoelectronic semiconductor chip. A mounting face is arranged transversely in relation to the radiation passage face and is provided for mounting the optoelectronic semiconductor component.
Abstract:
An optoelectronic component includes an optoelectronic semiconductor chip embedded in a molded body such that an upper side of the optoelectronic semiconductor chip is at least partially not covered by the molded body, wherein a first metallization is arranged on an upper side of the molded body, wherein the first metallization is electrically insulated from the optoelectronic semiconductor chip, and a first material is arranged on the first metallization.