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公开(公告)号：US10403594B2
公开(公告)日：2019-09-03
申请号：US15876929
申请日：2018-01-22
Inventor： Shailesh N. Joshi , Ercan Mehmet Dede
Abstract: A hybrid bonding layer includes a metal inverse opal (MIO) layer with a plurality of hollow spheres and a predefined porosity, and a ball grid array (BGA) disposed within the MIO layer. The MIO layer and the BGA may be disposed between a pair of bonding layers. The MIO layer and the BGA each have a melting point above a TLP sintering temperature and the pair of bonding layers each have a melting point below the TLP sintering temperature such that the hybrid bonding layer can be transient liquid phase bonded between a substrate and a semiconductor device. The pair of bonding layers may include a first pair of bonding layers with a melting point above the TLP sintering temperature and a second pair of bonding layers with a melting point below the TLP sintering temperature.
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82.发明申请公开(公告)号：US20190164760A1
公开(公告)日：2019-05-30
申请号：US15824573
申请日：2017-11-28
Inventor： Shailesh N. Joshi
IPC: H01L21/20 , H01L21/324
CPC classification number: H01L21/2007 , H01L21/324 , H01L2924/10272 , H01L2924/10323 , H01L2924/10325 , H01L2924/1033 , H01L2924/1067
Abstract: A multilayer composite bonding material for transient liquid phase bonding a semiconductor device to a metal substrate includes thermal stress compensation layers sandwiched between a pair of bonding layers. The thermal stress compensation layers may include a core layer with a first stiffness sandwiched between a pair of outer layers with a second stiffness that is different than the first stiffness such that a graded stiffness extends across a thickness of the thermal stress compensation layers. The thermal stress compensation layers have a melting point above a sintering temperature and the bonding layers have a melting point below the sintering temperature. The graded stiffness across the thickness of the thermal stress compensation layers compensates for thermal contraction mismatch between the semiconductor device and the metal substrate during cooling from the sintering temperature to ambient temperature.
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公开(公告)号：US10174659B2
公开(公告)日：2019-01-08
申请号：US15205018
申请日：2016-07-08
Inventor： Shailesh N. Joshi , Debasish Banerjee , Shashi Honnikoppa
IPC: F01N3/00 , F01N5/02 , H02S10/30 , F02D41/06 , G02F1/153 , G02F1/01 , G02F1/15 , F01N9/00 , F02D41/02
Abstract: Switchable radiative energy harvesting systems and methods of harvesting radiation are disclosed. A system includes an optical filter that includes at least one of an active material and a passive material. The optical filter is switchable between a shield mode and a harvesting mode such that the at least one of the active material and the passive material is in a reflecting state during the shield mode such that the optical filter blocks passage of radiation from a thermal emitter to a thermophotovoltaic cell and a transmitting state during the harvesting mode such that that the optical filter allows the radiation to pass from the thermal emitter to the thermophotovoltaic cell.
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84.发明申请公开(公告)号：US20180370324A1
公开(公告)日：2018-12-27
申请号：US15633123
申请日：2017-06-26
Inventor： Feng Zhou , Tianzhu Fan , Shailesh N. Joshi , Ercan Mehmet Dede
IPC: B60H1/00
CPC classification number: B60H1/00392 , B60H1/00007 , B60H1/00278 , B60H1/00478 , B60H1/00885 , B60H1/00964 , B60H2001/00307
Abstract: Systems and methods for providing heating and cooling to a cabin of an autonomous or semiautonomous electric vehicle. A system includes one or more autonomous or semiautonomous electric vehicle components generating thermal energy as a byproduct of operation, a radiator fluidly coupled to the one or more vehicle components and positioned downstream from the one or more vehicle components such that the radiator receives at least a portion of the thermal energy, a thermoelectric cooler thermally coupled to and located downstream from the radiator, and one or more bypass valves that control fluid flow from the radiator such that fluid flows directly to a cabin of the vehicle or flows through the thermoelectric cooler before flowing into the cabin.
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公开(公告)号：US20180277491A1
公开(公告)日：2018-09-27
申请号：US15466176
申请日：2017-03-22
Inventor： Shailesh N. Joshi , Yanghe Liu , Ercan Mehmet Dede
IPC: H01L23/00 , H01L23/488 , H01L21/77 , H01L21/02
Abstract: A power electronics assembly includes a semiconductor device, a metal substrate, and a cooling structure. The metal substrate includes a plurality of stress-relief features that extend at least partially through a thickness of the metal substrate. The plurality of stress-relief features are at least partially filled with a transient liquid phase (TLP) bonding material. The semiconductor device is positioned over the plurality of stress-relief features and thermally bonded to the metal substrate via TLP bonding material. Vehicles having power electronics assemblies with stress-relief through-features are also disclosed.
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Patent Agency Ranking
公开(公告)号：US09905532B2
公开(公告)日：2018-02-27
申请号：US15064981
申请日：2016-03-09
Inventor： Shailesh N. Joshi , Masao Noguchi
IPC: H01L23/00 , H01L23/373
CPC classification number: H01L24/83 , H01L23/3735 , H01L23/3736 , H01L24/27 , H01L24/32 , H01L24/75 , H01L2224/29082 , H01L2224/29111 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/3201 , H01L2224/32245 , H01L2224/32501 , H01L2224/7525 , H01L2224/753 , H01L2224/8312 , H01L2224/83203 , H01L2224/8382 , H01L2224/83825 , H01L2224/8384 , H01L2924/01013 , H01L2924/01029 , H01L2924/014 , H01L2924/10253 , H01L2924/10272 , H01L2924/00012
Abstract: Methods and systems of bonding substrates include disposing a low melting point material and one or more high melting point materials having a higher melting temperature than a melting temperature of the low melting point material between a first substrate and a second substrate to form a substrate assembly including a contacting surface comprising first and second areas; applying a first force at the first area; and applying heat to form a bond layer between the first and second substrates. A first formed porosity of the bond layer is aligned with the first area of the contacting surface. A second formed porosity of the bond layer is aligned with the second area of the contacting surface to which the first force was not applied, and the first formed porosity is different from the second formed porosity.
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公开(公告)号：US20180010505A1
公开(公告)日：2018-01-11
申请号：US15205018
申请日：2016-07-08
Inventor： Shailesh N. Joshi , Debasish Banerjee , Shashi Honnikoppa
CPC classification number: F01N5/02 , F01N9/00 , F01N2240/04 , F01N2240/10 , F01N2260/20 , F02D41/0255 , F02D41/064 , F02D2200/021 , G02F1/0147 , G02F1/1523 , G02F1/153 , H02S10/30 , Y02T10/16 , Y02T10/47
Abstract: Switchable radiative energy harvesting systems and methods of harvesting radiation are disclosed. A system includes an optical filter that includes at least one of an active material and a passive material. The optical filter is switchable between a shield mode and a harvesting mode such that the at least one of the active material and the passive material is in a reflecting state during the shield mode such that the optical filter blocks passage of radiation from a thermal emitter to a thermophotovoltaic cell and a transmitting state during the harvesting mode such that that the optical filter allows the radiation to pass from the thermal emitter to the thermophotovoltaic cell.
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公开(公告)号：US20170328648A1
公开(公告)日：2017-11-16
申请号：US15151679
申请日：2016-05-11
Inventor： Ercan M. Dede , Feng Zhou , Shailesh N. Joshi
CPC classification number: F28D15/025 , F28D15/0233 , F28D15/04 , F28D15/06 , F28F13/10 , F28F2245/02
Abstract: Heat transfer apparatuses and methods for directing heat transfer are disclosed. A heat transfer apparatus includes a vapor chamber having a first surface and a second surface where the first surface and the second surface define a chamber space and at least one of the first surface and the second surface includes a hydrophilic coating. The heat transfer apparatus also includes one or more first ultrasonic oscillators coupled to the first surface, one or more second ultrasonic oscillators coupled to the second surface, and a controller having a non-transitory, processor-readable storage medium storing programming instructions for selectively activating the one or more first ultrasonic oscillators or the one or more second ultrasonic oscillators based on an intended direction of heat flux.
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公开(公告)号：US09803938B2
公开(公告)日：2017-10-31
申请号：US13935800
申请日：2013-07-05
Inventor： Shailesh N. Joshi
IPC: F28F13/18 , F28F21/08 , F28F1/12 , H01L23/373 , H01L23/473 , H01L21/48 , F28F13/00
CPC classification number: F28F13/185 , F28F1/122 , F28F13/003 , F28F21/089 , H01L21/4882 , H01L23/3733 , H01L23/4735 , H01L2924/0002 , H01L2924/00
Abstract: Cooling assemblies including a porous three dimensional surface such as a heat sink are disclosed. In one embodiment, a cooling assembly includes a heat transfer substrate having a surface, a thermally conductive fin extending from the surface, a metal mesh bonded to a surface of the thermally conductive fin, and sintered metal particles bonded to the metal mesh and the surface of the thermally conductive fin. The metal mesh defines a macro-level porosity, and the sintered metal particles define a micro-level porosity. In another embodiment, a cooling assembly includes a heat transfer substrate having a surface, a thermally conductive fin extending from the surface of the heat transfer substrate, and sintered metal particles bonded to the surface of the thermally conductive fin. An average diameter of the sintered metal particles increases from a base of the thermally conductive fin to a top of the thermally conductive fin.
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公开(公告)号：US20170263531A1
公开(公告)日：2017-09-14
申请号：US15175674
申请日：2016-06-07
Inventor： Yuji Fukuoka , Ercan M. Dede , Shailesh N. Joshi , Feng Zhou
IPC: H01L23/467 , H01L29/78 , H01L29/739 , H01L29/16 , H01L29/20
CPC classification number: H01L23/467 , H01L23/3672 , H01L23/3677 , H01L23/3738 , H01L23/473 , H01L24/48 , H01L24/49 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/41741 , H01L29/7395 , H01L29/7802 , H01L2224/48091 , H01L2224/48106 , H01L2224/48225 , H01L2924/10254 , H01L2924/10272 , H01L2924/10323 , H01L2924/10325 , H01L2924/1033 , H01L2924/13055 , H01L2924/13091 , H01L2924/1426
Abstract: A power electronics assembly having a semiconductor device stack having a wide bandgap semiconductor device, a first electrode electrically coupled the wide bandgap semiconductor device, and a second electrode electrically coupled the wide bandgap semiconductor device. A substrate layer is coupled to the semiconductor device stack such that the first electrode is positioned between the substrate layer and the wide bandgap semiconductor device. The substrate layer includes a substrate inlet port and a substrate outlet port. An integrated fluid channel system extends between the substrate inlet and outlet ports and includes a substrate fluid inlet channel extending from the substrate inlet port into the substrate layer, a substrate fluid outlet channel extending from the substrate outlet port into the substrate layer, and one or more semiconductor fluid channels extending into the wide bandgap semiconductor device in fluid communication with the substrate fluid inlet and outlet channels.
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