公开(公告)号：US06899787B2

公开(公告)日：2005-05-31

申请号：US10173340

申请日：2002-06-14

申请人： Akira Nakano ,  Shintaro Asuke ,  Takeshi Miyashita ,  Tadahiro Ohmi

发明人： Akira Nakano ,  Shintaro Asuke ,  Takeshi Miyashita ,  Tadahiro Ohmi

IPC分类号： H05H1/26 ,  C23C16/00 ,  C23F1/00 ,  H01J37/32 ,  H05H1/30 ,  H05H1/46 ,  H05H1/00

CPC分类号： H01J37/32082 ,  H01J37/32183

摘要： A plasma processing unit has two electrodes for exciting a plasma, a plasma processing chamber, an RF generator, a matching circuit for performing impedance matching between the plasma processing chamber and the RF generator, a feeder that connects an output terminal of the matching circuit to one of the electrode, and a supplier that connects the RF generator to an input terminal of the matching circuit. The feeder is arranged to decrease the average density per unit volume of the RF power supplied from the RF generator as the RF power flows from the output terminal of the matching circuit to the electrode. The section of the plasma processing unit that is DC-grounded has a surface provided with a low-resistance portion. The supplier or the feeder is fixed on a floor using RF impedance adjustors so as to prevent the RF impedance therein from changing.

摘要翻译： 等离子体处理单元具有用于激发等离子体的两个电极，等离子体处理室，RF发生器，用于在等离子体处理室和RF发生器之间执行阻抗匹配的匹配电路，将匹配电路的输出端连接到 电极之一和将RF发生器连接到匹配电路的输入端的供应商。 馈送器布置成当RF功率从匹配电路的输出端流向电极时，降低从RF发生器提供的RF功率的每单位体积的平均密度。 直流接地的等离子体处理单元的部分具有设置有低电阻部分的表面。 供应商或馈线使用RF阻抗调节器固定在地板上，以防止其中的RF阻抗发生变化。

公开(公告)号：US06871803B1

公开(公告)日：2005-03-29

申请号：US10048597

申请日：2000-06-05

申请人： Tadahiro Ohmi ,  Kouji Nishino ,  Nobukazu Ikeda ,  Michio Yamaji ,  Ryousuke Dohi ,  Eiji Ideta ,  Takashi Hirose

发明人： Tadahiro Ohmi ,  Kouji Nishino ,  Nobukazu Ikeda ,  Michio Yamaji ,  Ryousuke Dohi ,  Eiji Ideta ,  Takashi Hirose

IPC分类号： F04F1/08 ,  F16K7/14 ,  F16K7/16 ,  F16K25/00 ,  F16K27/00 ,  F16K31/02 ,  F16K47/00 ,  H04B17/00 ,  H04W4/22 ,  H04W48/12 ,  H04W74/08 ,  B05B1/00 ,  B05B1/30 ,  F02M47/02

CPC分类号： F16K25/005 ,  F16K7/14 ,  F16K7/16 ,  F16K27/00 ,  H04W4/90 ,  H04W48/12 ,  H04W74/006 ,  H04W74/0833 ,  H04W76/50

摘要： A valve with an integral orifice for use in gas feeding equipment provided with a pressure-type flow volume control device to be employed for manufacturing of semi-conductors and chemical goods. The valve with an integral orifice has the excellent flow rate control characteristics by improving the processing accuracy of the orifice and preventing the distortion of the orifice at the time of assembling. The orifice is formed in a stainless steel made orifice disc. The metal-made orifice disc with the orifice formed by separate processing and the synthetic-resin-made valve seat body are removably assembled, wherein the orifice disc and the synthetic resin made valve seat body are fixed airtight to the valve main body by pressing the valve seat body via a metal inner disc.

摘要翻译： 具有用于气体供给设备的整体孔口的阀，其具有用于制造半导体和化学制品的压力型流量控制装置。 具有整体孔的阀具有优异的流量控制特性，通过提高喷嘴的加工精度并防止在组装时孔口的变形。 孔口形成为不锈钢制的孔盘。 具有通过分离处理形成的孔的金属制孔口盘和合成树脂制的阀座体可拆卸地组装，其中孔板和合成树脂制成的阀座体通过压制阀座而被气密地固定到阀主体 阀座主体经由金属内盘。

公开(公告)号：US06866747B2

公开(公告)日：2005-03-15

申请号：US10843004

申请日：2004-05-10

申请人： Takamitsu Tadera ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

发明人： Takamitsu Tadera ,  Tatsushi Yamamoto ,  Masaki Hirayama ,  Tadahiro Ohmi

IPC分类号： H05H1/46 ,  B23K10/00 ,  C23C16/511 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/30 ,  H05H1/00 ,  C23C16/00

CPC分类号： B23K10/003 ,  B23K2101/40

摘要： On one side of a microwave entrance window that is exposed to the atmosphere, a slot plate having slots and a resonant unit are provided. The slot plate and the resonant unit are integrally placed to be slidable by linear guides with respect to a process chamber. In this way, a plasma processing apparatus can be provided that performs a highly uniform plasma process and is excellent in terms of plasma generation property.

摘要翻译： 在暴露于大气的微波入口窗的一侧，设有具有狭缝的槽板和谐振单元。 槽板和谐振单元整体地放置成可以通过线性导轨相对于处理室滑动。 以这种方式，可以提供执行高度均匀的等离子体处理的等离子体处理装置，并且在等离子体产生性方面是优异的。

公开(公告)号：US20050042869A1

公开(公告)日：2005-02-24

申请号：US10467820

申请日：2002-12-10

申请人： Tadahiro Ohmi ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Masaki Hirayama

IPC分类号： C23C16/56 ,  C23C8/36 ,  C23C16/02 ,  C23C16/511 ,  H01J37/32 ,  H01L21/31 ,  H01L21/314 ,  H01L21/318 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02247 ,  C23C8/36 ,  H01J37/321 ,  H01J37/32357 ,  H01L21/02252 ,  H01L21/3143 ,  H01L21/318

摘要： In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive member formed in a processing vessel and having a plurality of apertures (131a) for passing plasma. A surface of the control electrode is covered by an aluminum oxide or a conductive nitride. In the substrate processing apparatus, a gas containing He and N2 is supplied into the processing vessel. In the plasma formation space, there is formed plasma under a condition in which atomic state nitrogen N* are excited. The atomic state nitrogen N* are used to nitride a surface of the substrate.

摘要翻译： 在衬底处理设备中，控制电极（131）分离包括待处理衬底和不包括衬底的等离子体形成空间（11B）的工艺空间（11C）。 控制电极包括形成在处理容器中并具有用于通过等离子体的多个孔（131a）的导电构件。 控制电极的表面被氧化铝或导电氮化物覆盖。 在基板处理装置中，将含有He和N2的气体供给到处理容器中。 在等离子体形成空间中，在原子态氮N *被激发的条件下形成等离子体。 原子态氮N *用于氮化衬底的表面。

公开(公告)号：US20050000440A1

公开(公告)日：2005-01-06

申请号：US10811034

申请日：2004-08-27

申请人： Akira Nakano ,  Tadahiro Ohmi

发明人： Akira Nakano ,  Tadahiro Ohmi

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/509 ,  C23C16/52 ,  C23C16/54 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/66 ,  H05H1/36 ,  C23C16/00

CPC分类号： H01L22/20 ,  C23C16/5096 ,  C23C16/54 ,  H01J37/32082 ,  H01L2924/0002 ,  H01L2924/014 ,  H01L2924/00

摘要： A plasma processing apparatus comprising a plurality of plasma processing units is provided. Each of the plasma processing units has a matching circuit connected between a radiofrequency generator and a plasma excitation electrode. Among these plasma processing units, a variation between the maximum and minimum values of input-terminal-side AC resistances RA of the matching circuits defined by =(RAmax−RAmin)/(RAmax+RAmin) is adjusted to be less than 0.5. A variation between the maximum and minimum values of output-terminal-side AC resistances RB of the matching circuits defined by =(RBmax−RBmin)./(RBmax+RBmin) is also adjusted to be less than 0.5. The plasma processing units can be adjusted to achieve substantially uniform plasma results in a shorter period of time.

摘要翻译： 提供包括多个等离子体处理单元的等离子体处理装置。 每个等离子体处理单元具有连接在射频发生器和等离子体激励电极之间的匹配电路。 在这些等离子体处理单元中，由RA> =（RAmax-RAmin）/（RAmax + RAmin）定义的匹配电路的输入端侧AC电阻RA的最大值和最小值之间的变化值RA被调整为 小于0.5。 由 =（RBmax-RBmin）./（RBmax + RBmin）定义的匹配电路的输出端侧AC电阻RB的最大值和最小值之间的变化也被调整为小于0.5。 可以调节等离子体处理单元以在更短的时间内实现基本均匀的等离子体结果。

公开(公告)号：US06797194B1

公开(公告)日：2004-09-28

申请号：US09622397

申请日：2000-12-01

申请人： Hirohisa Kikuyama ,  Masayuki Miyashita ,  Tatsuhiro Yabune ,  Tadahiro Ohmi

发明人： Hirohisa Kikuyama ,  Masayuki Miyashita ,  Tatsuhiro Yabune ,  Tadahiro Ohmi

IPC分类号： C09K1300

CPC分类号： H01L21/02063 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31111 ,  H01L21/76814

摘要： The present invention provides a micromachining surface treatment material for and a surface treatment method that suppress widening of the diameter of contact holes when removing a natural oxidation layer arising at bottom sections of the contact holes. The micromachining surface treatment material contains less than 0.1% hydrofluoric acid, and more than 40% by weight but less than or equal to 47% by weight of ammonium fluoride. Also, a surfactant is contained therein in an amount from 0.0001 to 0.1% by weight.

摘要翻译： 本发明提供了一种用于表面处理方法的微加工表面处理材料，并且在去除在接触孔底部产生的自然氧化层时，抑制接触孔直径的扩大。 微加工表面处理材料含有小于0.1％的氢氟酸，和大于40重量％但小于或等于47重量％的氟化铵。 此外，其中含有0.0001至0.1重量％的表面活性剂。

公开(公告)号：US06748751B2

公开(公告)日：2004-06-15

申请号：US10331653

申请日：2002-12-31

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Sadao Kobayashi ,  Isao Terada ,  Toshihisa Okabe ,  Takashi Taniguchi ,  Naoki Mori ,  Hiromu Itoh ,  Yoshihide Wakayama ,  Hitoshi Inaba ,  Kazuo Saito ,  Kikuji Kobayashi ,  Hideo Hanaoka

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Sadao Kobayashi ,  Isao Terada ,  Toshihisa Okabe ,  Takashi Taniguchi ,  Naoki Mori ,  Hiromu Itoh ,  Yoshihide Wakayama ,  Hitoshi Inaba ,  Kazuo Saito ,  Kikuji Kobayashi ,  Hideo Hanaoka

IPC分类号： F28C100

CPC分类号： F24F5/0035 ,  F25D7/00 ,  F28C1/04

摘要： An air cooling device includes at least one cooling unit which includes an oblique honeycomb having front, rear, upper, and lower openings and disposed so that air to be cooled is introduced into the front opening and cooled air is discharged from the rear opening, a cooling water supply means which supplies cooling water to the upper opening of the oblique honeycomb, and a water receiving section which receives discharge water discharged from the lower opening of the oblique honeycomb, and a blower means which introduces air to be cooled into the front opening of the oblique honeycomb and allows cooled air to be discharged from the rear opening of the oblique honeycomb, wherein the height of one oblique honeycomb in the cooling unit is 200 to 800 mm. The air cooling device has high thermal efficiency, a small liquid-gas ratio, and a small pressure drop, and is capable of saving space and energy.

摘要翻译： 空气冷却装置包括至少一个冷却单元，该冷却单元包括具有前，后，上，下开口的倾斜蜂窝体，并且设置成使待冷却的空气被引入前开口中，并且冷却的空气从后开口排出， 向倾斜蜂窝体的上部开口供给冷却水的冷却水供给单元以及容纳从倾斜蜂窝体的下部开口排出的排水的吸水部以及将被冷却空气导入前述开口部的送风装置 的倾斜蜂窝体，并且允许冷却空气从倾斜蜂窝的后开口排出，其中冷却单元中的一个倾斜蜂窝的高度为200至800mm。 空气冷却装置具有热效率高，液气比小，压降小，能够节省空间和能量。

公开(公告)号：US06726814B2

公开(公告)日：2004-04-27

申请号：US10056092

申请日：2002-01-28

申请人： Tadahiro Ohmi ,  Kazuyuki Harada ,  Nobuyoshi Tanaka

发明人： Tadahiro Ohmi ,  Kazuyuki Harada ,  Nobuyoshi Tanaka

IPC分类号： C23C1434

CPC分类号： C23C14/10 ,  C23C14/0694 ,  C23C14/081 ,  C23C14/083 ,  G02B1/115

摘要： A process for producing an optical article includes laminating a first optically transparent thin layer and a second optically transparent thin layer having a higher refractive index than that of the first optically transparent thin layer on a surface of a substrate. At least one of the first and second optically transparent thin layers is deposited by sputtering using a sputtering gas comprising atoms of at least one selected from the group consisting of krypton, xenon and radon.

摘要翻译： 一种光学制品的制造方法，包括在基板的表面上层叠第一光学透明薄膜和具有比第一光学透明薄层的折射率高的折射率的第二光学透明薄层。 使用包含选自氪，氙和氡中的至少一种的原子的溅射气体通过溅射沉积第一和第二光学透明薄层中的至少一个。

公开(公告)号：US06701202B2

公开(公告)日：2004-03-02

申请号：US10033443

申请日：2001-11-02

申请人： Akira Nakano ,  Tadahiro Ohmi

发明人： Akira Nakano ,  Tadahiro Ohmi

IPC分类号： G06F1900

CPC分类号： H01J37/32174 ,  C23C16/52 ,  H01J37/32935 ,  H01J37/3299

摘要： A plasma processing apparatus has a plasma processing chamber having a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit for matching the impedance between the plasma processing chamber and the radiofrequency generator. The loss capacitance CX1 at a later time t1 after delivery is measured between the plasma excitation electrode and ground potential positions which are grounded. The performance is evaluated by whether or not the loss capacitance CX1 is less than 26 times the plasma electrode capacitance Ce1 at the later time t1 between the plasma excitation electrode and a counter electrode which cooperate with each other.

摘要翻译： 等离子体处理装置具有等离子体处理室，其具有等离子体激励电极，与等离子体激励电极连接的射频发生器，以及用于匹配等离子体处理室与射频发生器之间的阻抗的匹配电路。 在等离子体激发电极和接地的地电势位置之间测量输送之后的t1时刻的损耗电容CX1。 通过在等离子体激励电极和相互配合的对置电极之间的稍后时间t1，损耗电容CX1是否小于等离子体电极电容Ce1的26倍来评估性能。

公开(公告)号：US06690702B1

公开(公告)日：2004-02-10

申请号：US09528183

申请日：2000-03-17

申请人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Masaki Hirayama

发明人： Tadahiro Ohmi ,  Nobuyoshi Tanaka ,  Masaki Hirayama

IPC分类号： H01S304

CPC分类号： H01S3/225 ,  H01S3/03 ,  H01S3/034 ,  H01S3/036 ,  H01S3/0973

摘要： In an excimer laser oscillation apparatus including a laser chamber (20) constituted by a laser tube (2) for storing a laser gas containing a gas mixture of at least one inert gas selected from the group consisting of Kr, Ar, and Ne, He and F2 gas, and an optical resonator consisting of a pair of reflection mirrors (5, 6) arranged to sandwich the laser chamber (20) therebetween, the inner surface of the laser chamber (20) for storing the laser gas has a reflection-free surface with respect to light of a desired wavelength of 248 nm, 193 nm, or 157 nm, and the uppermost surface of the inner surface consists of a fluoride, and a means (waveguide 1) for introducing a microwave for exciting the laser gas in the laser chamber (20) is prepared. With this arrangement, an excimer laser oscillation apparatus, an oscillation method, and an exposure apparatus can be provided, which can reduce the load on the lens material and its surface, can simplify the mirror or laser scanning control system, and are satisfactorily used in mass production since the service life of an excimer laser can be sufficiently prolonged.

摘要翻译： 在包括由激光管（2）构成的激光室（20）的准分子激光振荡装置中，所述激光管（2）用于存储含有选自Kr，Ar和Ne的至少一种惰性气体的气体混合物的激光气体，He 和F2气体，以及由设置成将激光室（20）夹在其间的一对反射镜（5,6）构成的光谐振器，用于存储激光气体的激光室（20）的内表面具有反射 - 相对于248nm，193nm或157nm的所需波长的光的自由表面，并且内表面的最上表面由氟化物组成，并且用于引入微波激励激光气体的装置（波导1） 在激光室（20）中。 通过这种布置，可以提供准分子激光振荡装置，振荡方法和曝光装置，其可以减少透镜材料及其表面上的负载，可以简化镜子或激光扫描控制系统，并且令人满意地使用 由于准分子激光器的使用寿命可以充分延长，因此大量生产。