公开(公告)号：US06992321B2

公开(公告)日：2006-01-31

申请号：US09903784

申请日：2001-07-13

Applicant: Aroon Tungare ,  Tomasz L. Klosowiak

Inventor： Aroon Tungare ,  Tomasz L. Klosowiak

IPC: H01L21/00

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  C30B29/48 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L41/0815 ,  H01L41/319

Abstract: High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.

公开(公告)号：US20050280335A1

公开(公告)日：2005-12-22

申请号：US11204097

申请日：2005-08-15

Applicant: Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

Inventor： Atsushi Tomozawa ,  Eiji Fujii ,  Hideo Torii ,  Akiko Murata ,  Ryoichi Takayama ,  Taku Hirasawa

IPC: B41J2/14 ,  B41J2/16 ,  G01C19/5607 ,  H01L41/047 ,  H01L41/22 ,  H01L41/24

CPC classification number: G01C19/5607 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2002/14491 ,  H01L41/0477 ,  H01L41/0815 ,  H01L41/1876 ,  H01L41/316

Abstract: A piezoelectric element includes a first electrode layer 14 provided on a substrate 11 and made of a noble metal to which at least one additive selected from the group consisting of Mg, Ca, Sr, Ba, Al and oxides thereof is added, an orientation control layer 15 provided on the first electrode layer 14 and made of a cubic or tetragonal perovskite oxide that is preferentially oriented along a (100) or (001) plane, and a piezoelectric layer 16 provided on the orientation control layer 15 and made of a rhombohedral or tetragonal perovskite oxide that is preferentially oriented along a (001) plane.

Abstract translation: 压电元件包括​​：第一电极层14，其设置在基板11上，由添加有Mg，Ca，Sr，Ba，Al及其氧化物的至少一种添加剂的贵金属构成，取向控制 设置在第一电极层14上并由沿（100）或（001）面优先取向的立方或四方晶系钙钛矿氧化物制成的层15，以及设置在取向控制层15上并由菱面体形成的压电层16 或沿（001）面优先取向的四方钙钛矿氧化物。

公开(公告)号：US20050218756A1

公开(公告)日：2005-10-06

申请号：US11097924

申请日：2005-04-01

Applicant: Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

Inventor： Satoru Fujii ,  Takeshi Kamada ,  Atsushi Tomozawa ,  Eiji Fujii

IPC: B41J2/01 ,  B41J2/045 ,  B41J2/14 ,  B41J2/16 ,  G01C19/56 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/22

CPC classification number: B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  G01C19/5607 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

Abstract: In a piezoelectric element, a cubic or tetragonal orientation control layer (15) is provided on a first electrode layer (14), and formed on the orientation control layer (15) is a piezoelectric layer (16) having a rhombohedral or tetragonal crystalline structure and made of lead zirconate titanate to which a Pb-containing complex perovskite compound expressed by the chemical formula Pb(AaBb)O3 has been added in an amount that is from 1 mol % to 50 mol %. The piezoelectric layer (16) is formed so that the crystal grains thereof become columnar grains which extend in the thickness direction of the piezoelectric layer (16) and in which the ratio of the average cross-sectional diameter to the length is from 1/50 to 1/14.

Abstract translation: 在压电元件中，在第一电极层（14）上设置立方或四方取向控制层（15），并且在取向控制层（15）上形成具有菱形或四边形晶体结构的压电层（16） 并由化学式Pb（A a B b B b）O 3表示的含Pb复合钙钛矿化合物的锆钛酸铅制成， 的添加量为1摩尔％〜50摩尔％。 形成压电体层16，使其晶粒成为在压电体层16的厚度方向上延伸的柱状晶粒，其平均截面直径与长度的比率为1/50 到1/14。

公开(公告)号：US20050140743A1

公开(公告)日：2005-06-30

申请号：US10980749

申请日：2004-11-03

Applicant: Hiromu Miyazawa ,  Takeshi Kijima ,  Takamitsu Higuchi ,  Setsuya Iwashita

Inventor： Hiromu Miyazawa ,  Takeshi Kijima ,  Takamitsu Higuchi ,  Setsuya Iwashita

IPC: B41J2/045 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/145 ,  B41J2/15 ,  B41J2/16 ,  F04B9/00 ,  F04B43/04 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/319 ,  H01L41/39 ,  H03B5/30 ,  H03B5/32 ,  H03H3/02 ,  H03H3/08 ,  H03H9/02 ,  H03H9/17 ,  H03H9/25 ,  H03H9/64 ,  H03H9/72

CPC classification number: H03H9/02133 ,  B41J2/14233 ,  B41J2202/03 ,  F04B43/046 ,  H01L41/0815 ,  H01L41/1875 ,  H01L41/318 ,  H01L41/319 ,  H03H3/02 ,  H03H3/08 ,  H03H9/172 ,  H03H9/173 ,  H03H9/174

Abstract: A piezoelectric film is provided that is represented by the following general formula: Pb1-b[((X1/3Nb2/3)1-cB′c)1-aYa]O3 wherein X is at least one of Mg, Zn and Ni; B′ is at least one of Zr, Ti and Hf; Y is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05≦a

Abstract translation: 提供了由以下通式表示的压电膜：Pb 1-b [（（X 1/3 Nb 2/3） ）1-c B'C 1）a-1-a a a a 3 a / 3 >其中X是Mg，Zn和Ni中的至少一种; B'是Zr，Ti和Hf中的至少一种; Y是V，Nb，Ta，Cr，Mo和W中的至少一种; a满足0.05 <= a <0.30; b满足0.025 <= b <= 0.15; 当X为Mg时，c满足0.25 <= c <= 0.35; 当X为Ni时，c满足0.30 <= c <0.40; 当X为Zn时，c满足0.05 <= c <0.15。

公开(公告)号：US20050128255A1

公开(公告)日：2005-06-16

申请号：US11007318

申请日：2004-12-09

Applicant: Koichiro Nakanishi

Inventor： Koichiro Nakanishi

IPC: H01L41/09 ,  B41J2/16 ,  B41J2/045

CPC classification number: B41J2/1646 ,  B41J2/161 ,  B41J2/1642 ,  H01L41/0815 ,  H01L41/316 ,  H01L41/319

Abstract: A porous layer composed of porous silicon, and the like is formed by anodization and the like on a substrate acting as a vibration sheet of, for example, a liquid discharging head, and a single crystal thin film is epitaxially grown on the porous layer. A lower electrode, a piezoelectric film, and an upper electrode are laminated on the single crystal thin film, and the piezoelectric film is made to a single crystal or a highly oriented polycrystal by a heat treatment. Stress caused by a difference between the thermal expansion coefficient of the substrate and that of the piezoelectric film can be eased by interposing the porous layer therebetween.

Abstract translation: 通过在作为例如喷液头的振动片的基板上的阳极氧化等形成由多孔硅构成的多孔层，并且在多孔层上外延生长单晶薄膜。 在单晶薄膜上层压下电极，压电薄膜和上电极，通过热处理将压电薄膜制成单晶或高取向多晶。 由于基板的热膨胀系数与压电膜的热膨胀系数的差异引起的应力可以通过在其间插入多孔层来缓解。

公开(公告)号：US20050127780A1

公开(公告)日：2005-06-16

申请号：US11006639

申请日：2004-12-08

Applicant: Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

Inventor： Toshihiro Ifuku ,  Takanori Matsuda ,  Tetsuro Fukui

IPC: B41J2/045 ,  B06B1/06 ,  B41J2/055 ,  B41J2/135 ,  B41J2/14 ,  B41J2/16 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/319 ,  H02N2/00

CPC classification number: B41J2/1646 ,  B41J2/161 ,  B41J2/1642 ,  B41J2202/03 ,  H01L41/0815 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316 ,  H01L41/319

Abstract: In piezoelectric thin films constituting crystalline dielectric thin film elements used for a piezoelectric actuator of a liquid discharge head, stress is generated in the crystallization step by heating due to the lattice misfit. Given this fact, by interposing between a substrate and intermediate layer which has a twin structure that absorbs the stress, film peeling and deterioration of the piezoelectric properties of the piezoelectric thin films are prevented. The intermediate layer is of a multi-layer structure which has a first intermediate layer comprising a twin structure thin film and a second intermediate layer which is the lower electrode, and because the substrate also serves as a lower electrode, the intermediate layer has a single layer structure comprising a twin structure thin film.

Abstract translation: 在构成用于液体排出头的压电致动器的结晶电介质薄膜元件的压电薄膜中，由于晶格失配，通过加热在结晶步骤中产生应力。 鉴于这一事实，通过插入具有吸收应力的双结构的基板和中间层之间，防止了压电薄膜的膜剥离和压电性能的劣化。 中间层是具有包括双结构薄膜的第一中间层和作为下电极的第二中间层的多层结构，并且由于基板也用作下电极，所以中间层具有单个 层结构包括双结构薄膜。

公开(公告)号：US20050105038A1

公开(公告)日：2005-05-19

申请号：US11017820

申请日：2004-12-22

Applicant: Masao Kondo ,  Hideki Yamawaki

Inventor： Masao Kondo ,  Hideki Yamawaki

IPC: C30B29/26 ,  C23C16/40 ,  G02F1/1339 ,  H01L21/8246 ,  H01L27/105 ,  H01L41/08 ,  H01L41/09 ,  H01L41/18 ,  H01L41/187 ,  H01L41/22 ,  H01L41/29 ,  H01L41/317 ,  H01L41/39

CPC classification number: H01L41/0815 ,  H01L41/1875 ,  H01L41/29 ,  H01L41/319

Abstract: A thin film multilayer body is disclosed that includes a single crystal substrate of silicon or gallium arsenide; an intermediate layer of magnesia spinel formed on the single crystal substrate by epitaxial growth; and a conductive layer of a platinum-group element formed on the intermediate layer by epitaxial growth. An oxide layer is to be epitaxially grown on the conductive layer, the oxide layer having a crystalline structure having a simple perovskite lattice.

Abstract translation: 公开了一种薄膜多层体，其包括硅或砷化镓的单晶衬底; 通过外延生长在单晶衬底上形成的氧化镁尖晶石的中间层; 以及通过外延生长在中间层上形成的铂族元素的导电层。 在导电层上外延生长氧化物层，氧化物层具有具有简单钙钛矿晶格的晶体结构。

公开(公告)号：US06528863B1

公开(公告)日：2003-03-04

申请号：US08408753

申请日：1995-03-22

Applicant: Mareike K. Klee ,  Hans-Wolfgang Brand ,  Poul Larsen

Inventor： Mareike K. Klee ,  Hans-Wolfgang Brand ,  Poul Larsen

IPC: H01L2993

CPC classification number: C04B41/009 ,  C04B35/491 ,  C04B41/526 ,  C04B41/89 ,  C04B2111/00844 ,  H01G4/1245 ,  H01L31/032 ,  H01L41/0815 ,  H01L41/1875 ,  H01L41/1876 ,  H01L41/318 ,  C04B41/4537 ,  C04B41/5041 ,  C04B41/4554 ,  C04B35/00

Abstract: A perovskite-containing composite material comprising a substrate, an intermediate layer of a first titanium-containing perovskite and a covering layer of a second perovskite, both the first and the second perovskites being quaternary or higher-substituted perovskites. This composite material exhibits a single-phase perovskite covering layer and, consequently, can very suitably be used for the manufacture of electronic components and modules comprising integrated passive components. A description is given of a method of manufacturing said composite material.

Abstract translation: 1.一种钙钛矿复合材料，其特征在于，具有基材，第一含钛钙钛矿的中间层和第二钙钛矿的覆盖层，所述第一和第二钙钛矿都为四价以上取代的钙钛矿。 该复合材料表现出单相钙钛矿覆盖层，因此可以非常适合地用于制造包括集成无源部件的电子部件和模块。 给出了制造所述复合材料的方法的描述。

公开(公告)号：US5612536A

公开(公告)日：1997-03-18

申请号：US374989

申请日：1995-01-19

Applicant: Hideo Torii ,  Takeshi Kamada ,  Shigenori Hayashi ,  Ryoichi Takayama ,  Takashi Hirao ,  Masumi Hattori

Inventor： Hideo Torii ,  Takeshi Kamada ,  Shigenori Hayashi ,  Ryoichi Takayama ,  Takashi Hirao ,  Masumi Hattori

IPC: G01P15/08 ,  G01P15/09 ,  H01L41/29 ,  G01J5/10

CPC classification number: G01P15/0922 ,  G01P15/0802 ,  H01L41/0478 ,  H01L41/0815 ,  H01L41/313 ,  Y10T29/42 ,  Y10T29/4981

Abstract: A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate, a rock-salt crystal structure oxide of a conductive NiO is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to direction against the substrate surface. By means of a sputtering method, a PZT film is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate having an opening part with an adhesive. After a connection electrode is connected, the whole structure is washed with water, thereby removing the KBr substrate.

Abstract translation: 薄膜传感器元件包括：具有开口部的传感器保持基板和附着在其上的多层膜，至少由电极膜A，具有（100）面取向的电极膜B和存在于电极之间的压电电介质氧化膜 膜A和电极膜B.结果，可以获得可用于加速度传感器元件和热电型红外线传感器元件的小，轻，高精度和便宜的薄膜传感器元件。 在平板KBr基板的表面上，通过等离子体MOCVD方法形成导电NiO的岩盐晶体结构氧化物，其垂直方向相对于衬底表面<100>晶体取向。 通过溅射法，在该表面上通过外延生长形成PZT膜，在其上形成Ni-Cr电极膜。 接下来，将多层膜结构反转并粘接到具有开口部的粘合剂的传感器基板。 连接电极连接后，整个结构用水清洗，从而除去KBr基板。

公开(公告)号：US5135295A

公开(公告)日：1992-08-04

申请号：US485918

申请日：1990-02-27

Applicant: Cheng-Kuei Jen ,  Michael Sayer ,  Guanghua Yi ,  Jean F. Bussiere

Inventor： Cheng-Kuei Jen ,  Michael Sayer ,  Guanghua Yi ,  Jean F. Bussiere

IPC: G02F1/01 ,  H01L41/087 ,  H01L41/24

CPC classification number: H01L41/0815 ,  G02F1/0134 ,  H01L41/087 ,  H01L41/318 ,  H01L41/1876

Abstract: Efficient, simple, miniature and economical piezoelectric and ultrasonic devices employing optical fibers coated with lead-zirconate-titanate (PZT) thin piezoelectric and ferroelectric films are described. The PZT thin films are fabricated chemically by a sol-gel method. Optical fibers can be dipped into the PZT solution, and followed by an annealing and an electric poling process in order to achieve good piezoelectricity in the coated PZT films. This coating process can be devised as an on-line method and thus coating length can be larger than meters. Due to the long coating length, high piezoelectricity, miniature and flexible nature, devices using optical fibers may be used for medical, telecommunication and sensor applications.

Abstract translation: 描述了使用涂覆有锆钛酸铅（PZT）薄压电和铁电薄膜的光纤的高效，简单，微型和经济的压电和超声波装置。 PZT薄膜通过溶胶 - 凝胶法化学制备。 可以将光纤浸入PZT溶液中，然后进行退火和电极化处理，以在涂覆的PZT膜中实现良好的压电性。 该涂布方法可以设计为在线方法，因此涂布长度可以大于米。 由于长涂层长度，高压电性，微型和柔性性质，使用光纤的器件可用于医疗，电信和传感器应用。