公开(公告)号：US4119994A

公开(公告)日：1978-10-10

申请号：US604794

申请日：1975-08-14

Applicant: Faquir Chand Jain ,  Mahmoud Ahmed Melehy

Inventor： Faquir Chand Jain ,  Mahmoud Ahmed Melehy

IPC: H01J1/34 ,  C23C16/08 ,  C30B25/02 ,  C30B29/08 ,  H01J1/308 ,  H01J9/12 ,  H01L21/00 ,  H01L21/203 ,  H01L21/205 ,  H01L21/331 ,  H01L29/00 ,  H01L29/73 ,  H01L29/861 ,  H01L29/864 ,  H01L31/109 ,  H01L31/18 ,  H01L29/267 ,  H01L29/205

CPC classification number: H01L31/18 ,  H01L21/00 ,  H01L29/00 ,  H01L31/109 ,  H01L21/02395 ,  H01L21/02532 ,  H01L21/02573

Abstract: Heterojunction devices including heterotransistors and heterodiodes are disclosed which exhibit improved high-frequency, efficiency, and power characteristics. The heterotransistor in one embodiment includes a wide-gap collector and in another embodiment includes a wide-gap isotype emitter having regions of different impurity doping levels. A heterodiode includes a similar wide-gap isotype emitter. Also disclosed are a heterojunction microwave diode and two types of heterojunction photocathodes. The microwave diode and one of the photocathodes are characterized by the occurrence of avalanche at the heterojunction.

Abstract translation: 公开了包括异质二极管和异二极管的异质结装置，其显示出改善的高频，效率和功率特性。 在一个实施例中，异晶体管包括宽间隙集电极，在另一个实施例中，包括具有不同杂质掺杂浓度区域的宽间隙同种型发射体。 异源二极体包括类似的宽间隙同种型发射体。 还公开了异质结微波二极管和两种类型的异质结光电阴极。 微波二极管和其中一个光电阴极的特征在于在异质结处发生雪崩。

公开(公告)号：US4040080A

公开(公告)日：1977-08-02

申请号：US724761

申请日：1976-09-20

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/308 ,  H01J9/02 ,  H01L29/161 ,  H01L27/14

CPC classification number: H01J1/308 ,  H01J9/022

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

公开(公告)号：US4040074A

公开(公告)日：1977-08-02

申请号：US724759

申请日：1976-09-20

Applicant: Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

Inventor： Katsuo Hara ,  Minoru Hagino ,  Tokuzo Sukegawa

IPC: H01J1/308 ,  H01J9/02 ,  H01L29/161 ,  H01L27/14

CPC classification number: H01J9/022 ,  H01J1/308

Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.

公开(公告)号：US3916227A

公开(公告)日：1975-10-28

申请号：US46976274

申请日：1974-05-14

Applicant: BRAUN AG

Inventor： MOHR WALTER ,  KLAUER HANS-DIETER

IPC: H01J1/308 ,  H01L41/08

CPC classification number: H01J1/308

Abstract: A piezoelectric igniter with a manually operable striking mechanism which comprises a hammer, a piezoelectric transducer, and a energy storing or compression spring acting on said hammer and operated by an actuating member. The hammer is held in its rest position by a release device adapted to release the hammer when a definite compressive force is exerted on the same. A bounce plate is mounted at the end of the transducer facing the hammer and a return spring is provided between said bounce plate and the hammer. The transducer has a lateral clearance to a housing which receives all component parts.

Abstract translation: 一种具有可操作的打击机构的压电点火器，其包括锤，压电换能器以及作用在所述锤上并由致动构件操作的能量存储或压缩弹簧。 锤子通过释放装置保持在其静止位置，该释放装置适于在施加一定压缩力时释放锤子。 反射板安装在传感器的面向锤子的端部，并且在所述弹跳板和锤之间设置复位弹簧。 传感器具有接收所有部件的壳体的横向间隙。

公开(公告)号：US3581151A

公开(公告)日：1971-05-25

申请号：US3581151D

申请日：1968-09-16

Applicant: BELL TELEPHONE LABOR INC

Inventor： BOYLE WILLARD S ,  MORTON JACK A

IPC: H01J1/308 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01J1/308

Abstract: Cold cathode structures comprise a plurality of semiconductor whisker elements each including an electronic barrier near the free end. Electron emission is enhanced by a high external field that is concentrated at the tip of each whisker element.

公开(公告)号：US3334248A

公开(公告)日：1967-08-01

申请号：US42976465

申请日：1965-02-02

Applicant: TEXAS INSTRUMENTS INC

Inventor： ROBERT STRATTON

IPC: H01J1/308 ,  H01L27/00

CPC classification number: H01J1/308 ,  H01L27/00

公开(公告)号：US3098168A

公开(公告)日：1963-07-16

申请号：US80082059

申请日：1959-03-20

Applicant: CSF

Inventor： PIERRE AIGRAIN

IPC: H01J1/308

CPC classification number: H01J1/308

公开(公告)号：US11476074B2

公开(公告)日：2022-10-18

申请号：US17324923

申请日：2021-05-19

Applicant: Yoshiyuki Ando ,  Rieko Ando ,  Yukiko Noguchi ,  Emiko Takahira

Inventor： Yoshiyuki Ando

IPC: H01J1/316 ,  H01L29/786 ,  H01J19/02 ,  H01J1/308

Abstract: A vacuum channel field effect transistor includes a first insulator on a p-type semiconductor substrate, a gate electrode on the first insulator, a second insulator on the gate electrode, a drain electrode on the second insulator, and an n+ impurity diffusion layer in the surface of the p-type semiconductor substrate, the n+ impurity diffusion layer being in contact with a side wall including side faces of the first insulator, the gate electrode, and the second insulator. Application of predetermined voltages to the n+ impurity diffusion layer, the gate electrode, and the drain electrode causes charge carriers in the n+ impurity diffusion layer to travel through a vacuum or air faced by the side wall to the drain electrode, which can increase the source-drain current.

公开(公告)号：US20170170363A1

公开(公告)日：2017-06-15

申请号：US15377775

申请日：2016-12-13

Applicant: Ostendo Technologies, Inc.

Inventor： Anna Volkova ,  Vladimir Ivantsov ,  Alexander Syrkin ,  Benjamin A. Haskell ,  Hussein S. El-Ghoroury

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/18 ,  H01L33/08 ,  H01L27/15 ,  H01J1/308 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/036 ,  H01L31/109 ,  H01L31/18 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01J1/308 ,  C30B29/406 ,  C30B29/607 ,  C30B29/62 ,  C30B29/66 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/20 ,  H01L31/035236 ,  H01L31/035281 ,  H01L31/109 ,  H01L31/1848 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/06 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/32 ,  Y02E10/544

Abstract: A method for growing on a substrate strongly aligned uniform cross-section semiconductor composite nanocolumns is disclosed. The method includes: (a) forming faceted pyramidal pits on the substrate surface; (b) initiating nucleation on the facets of the pits; and; (c) promoting the growth of nuclei toward the center of the pits where they coalesce with twinning and grow afterwards together as composite nanocolumns. Multi-quantum-well, core-shell nanocolumn heterostructures can be grown on the sidewalls of the nanocolumns. Furthermore, a continuous semiconductor epitaxial layer can be formed through the overgrowth of the nanocolumns to facilitate fabrication of high-quality planar device structures or for light emitting structures.

公开(公告)号：US09269523B2

公开(公告)日：2016-02-23

申请号：US14599988

申请日：2015-01-19

Applicant: Tsinghua University ,  HON HAI PRECISION INDUSTRY CO., LTD.

Inventor： Peng Liu ,  De-Jie Li ,  Chun-Hai Zhang ,  Duan-Liang Zhou ,  Bing-Chu Du ,  Shou-Shan Fan

IPC: H01L29/06 ,  H01J29/18 ,  H01J1/308 ,  H01J1/304 ,  H01J1/312 ,  H01J31/12

CPC classification number: H01J29/18 ,  H01J1/304 ,  H01J1/308 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/30461 ,  H01J2201/30469 ,  H01J2201/3125 ,  H01J2329/0449 ,  H01J2329/0455 ,  H01J2329/0478 ,  H01J2329/0484

Abstract: An electron emission device includes a number of first electrodes and a number of second electrodes intersected with each other to define a number of intersections. An electron emission unit is sandwiched between the first electrode and the second electrode at each of the number of intersections, wherein the electron emission unit includes a semiconductor layer and an insulating layer stacked together, the semiconductor layer defines a number of holes, the carbon nanotube layer covers the number of holes, and a portion of the carbon nanotube layer is suspended on the number of holes.

Abstract translation: 电子发射装置包括多个第一电极和多个彼此相交的第二电极以限定多个交点。 电子发射单元在每个交叉点的每一个处夹在第一电极和第二电极之间，其中电子发射单元包括层叠在一起的半导体层和绝缘层，半导体层限定多个孔，碳纳米管 层覆盖孔的数量，并且一部分碳纳米管层悬浮在孔的数量上。