公开(公告)号：US3159408A

公开(公告)日：1964-12-01

申请号：US14317161

申请日：1961-10-05

申请人： GRACE W R & CO

发明人： SANCHEZ MOISES G ,  HOOVER VERNON R

IPC分类号： C30B13/28

CPC分类号： C30B13/285 ,  Y10S117/911 ,  Y10T279/17231 ,  Y10T279/35

公开(公告)号：US2876147A

公开(公告)日：1959-03-03

申请号：US58612556

申请日：1956-05-21

申请人： SIEMENS AG

发明人： HEINRICH KNIEPKAMP ,  GUNTHER ZIEGLER

IPC分类号： C30B13/16 ,  C30B13/26 ,  C30B13/28 ,  C30B13/32 ,  C30B15/00 ,  C30B15/02 ,  C30B15/30

CPC分类号： C30B13/28 ,  C30B13/16 ,  C30B13/26 ,  C30B13/32 ,  C30B15/002 ,  C30B15/02 ,  C30B15/30 ,  Y10S117/901 ,  Y10S117/91 ,  Y10S117/917 ,  Y10T117/1036 ,  Y10T117/1076

公开(公告)号：US20240003052A1

公开(公告)日：2024-01-04

申请号：US18252853

申请日：2021-11-12

申请人： NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

发明人： Kunimitsu KATAOKA ,  Junji AKIMOTO

IPC分类号： C30B29/30 ,  C30B13/14 ,  C30B13/28 ,  H01M10/0525 ,  H01M10/0562

CPC分类号： C30B29/30 ,  C30B13/14 ,  C30B13/28 ,  H01M10/0525 ,  H01M10/0562 ,  H01M2300/0071

摘要： The lithium composite oxide single crystal has a chemical composition represented by Li7-3x-w-vGaxLa3Zr2-w-vTaWNbvO12 (0.02≤x

公开(公告)号：US20200274193A1

公开(公告)日：2020-08-27

申请号：US16304231

申请日：2017-05-02

申请人： Naoki HAMAO ,  Kunimitsu KATAOKA ,  Junji AKIMOTO

发明人： Naoki HAMAO ,  Kunimitsu KATAOKA ,  Junji AKIMOTO

IPC分类号： H01M10/0562 ,  H01M10/0525 ,  C30B13/28 ,  C30B29/30 ,  C01G35/00

摘要： A solid electrolyte material having high ion conductivity and a all-solid-state lithium-ion secondary battery using this solid electrolyte material are provided. The solid electrolyte material has a garnet-related structure crystal represented by the chemical composition Li7−x−yLa3Zr2−x−yTaxNbyO12 (0.05≤x+y≤0.2, x≥0, y≥0), which belongs to an orthorhombic system and a space group belonging to Ibca. The solid electrolyte material has lithium-ion conductivity at 25° C. of at least 1.0×10−4 S/cm. Also, in this solid electrolyte material, the lattice constants are 1.29 nm≤a≤1.32 nm, 1.26 nm≤b≤1.29 nm, and 1.29 nm≤c≤1.32 nm, and three 16f sites and one 8d site in the crystal structure are occupied by lithium-ions. The all-solid-state lithium-ion secondary battery has a positive electrode, a negative electrode, and a solid electrolyte, the solid electrolyte comprising this solid electrolyte material.

公开(公告)号：US20200269322A1

公开(公告)日：2020-08-27

申请号：US16866814

申请日：2020-05-05

申请人： Georgia Tech Research Corporation

发明人： Suman DAS ,  Rohan BANSAL ,  Justin GAMBONE

IPC分类号： B22F7/06 ,  B33Y70/00 ,  B33Y30/00 ,  B33Y50/02 ,  C30B13/24 ,  C30B29/52 ,  B22F5/00 ,  B22F5/04 ,  B23P6/00 ,  B29C64/153 ,  B22F3/105 ,  B33Y10/00 ,  C30B13/28 ,  C30B13/32 ,  C30B19/08 ,  C30B19/10

摘要： Scanning Laser Epitaxy (SLE) is a layer-by-layer additive manufacturing process that allows for the fabrication of three-dimensional objects with specified microstructure through the controlled melting and re-solidification of a metal powders placed atop a base substrate. SLE can be used to repair single crystal (SX) turbine airfoils, for example, as well as the manufacture functionally graded turbine components. The SLE process is capable of creating equiaxed, directionally solidified, and SX structures. Real-time feedback control schemes based upon an offline model can be used both to create specified defect free microstructures and to improve the repeatability of the process. Control schemes can be used based upon temperature data feedback provided at high frame rate by a thermal imaging camera as well as a melt-pool viewing video microscope. A real-time control scheme can deliver the capability of creating engine ready net shape turbine components from raw powder material.

公开(公告)号：US10094042B2

公开(公告)日：2018-10-09

申请号：US14813287

申请日：2015-07-30

申请人： SILTRONIC AG

发明人： Kurt Niederer ,  Helmut Teroerde ,  Josef Berger ,  Goetz Meisterernst ,  Frank Muemmler ,  Simon Zitzelsberger

IPC分类号： C30B13/00 ,  C30B13/28 ,  C30B29/06

摘要： A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.

公开(公告)号：US08545628B2

公开(公告)日：2013-10-01

申请号：US12305553

申请日：2007-11-16

申请人： Chantal Arena ,  Christiaan Werkhoven

发明人： Chantal Arena ,  Christiaan Werkhoven

IPC分类号： C30B35/00 ,  C30B13/28 ,  C30B23/00 ,  C23C16/00

CPC分类号： C30B25/14 ,  C23C16/303 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/481 ,  C23C16/54 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/0262 ,  Y10T117/10 ,  Y10T117/1008

摘要： The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.

摘要翻译： 本发明涉及为生产III-N（氮）化合物半导体晶片而专门用于生产GaN晶片的方法和装置。 具体地说，这些方法涉及基本上防止在化学气相沉积（CVD）反应器内的隔离阀装置上形成不需要的材料。 特别地，本发明提供了用于限制用于系统中的隔离阀上的GaCl 3和反应副产物的沉积/冷凝的装置和方法，以及通过使一定量的气态反应形成单晶III-V族半导体材料的方法 III族前体作为一种反应物，一定量的气态V族组分作为反应室中的另一反应物。

公开(公告)号：US08349080B1

公开(公告)日：2013-01-08

申请号：US12313766

申请日：2008-11-24

申请人： John C. Price

发明人： John C. Price

IPC分类号： C30B35/00 ,  C30B13/28 ,  C30B15/30 ,  C30B13/00 ,  C30B21/04 ,  C30B28/08

CPC分类号： G02B21/26 ,  G02B21/22 ,  G02B21/32 ,  Y10T117/10 ,  Y10T117/1008 ,  Y10T117/108

摘要： A micro-manipulator machine for harvesting and cryofreezing crystals for cryogenic storage and subsequent analysis includes a micropositioner mechanism for converting motions manually input to a position control knob to fractionally-scaled motions of a follower mechanism which includes a tool head support arm and tool head that releasably holds a filamentary polymer cryoloop for immersion into a liquid crystal growth media and extraction of a liquid drop containing a selected crystal from the media. A first automatic actuator mechanism orbits the tool head support arm, tool head, cryoloop, liquid drop and harvested crystal from a harvesting location to a retrieval location when the micropositioner input control arm has been moved manually away from the crystal harvesting location by the operator after extracting a crystal drop, and a second automatic actuator mechanism pivots the toll head into a flowing stream of a cryogenic gas to freeze the liquid drop and crystal.

摘要翻译： 一种用于收集和冻结晶体以用于低温储存和随后分析的微操纵机器包括微定位器机构，用于将手动输入的运动转换到位置控制旋钮到从动机构的分数运动，其包括工具头支撑臂和工具头， 可释放地保持用于浸入液晶生长介质的丝状聚合物冷冻液并从介质中萃取含有选定晶体的液滴。 当微型定位器输入控制臂在操作者手动移离晶体收集位置之后，第一自动致动器机构将工具头支撑臂，工具头，冷冻液，液滴和收集的晶体从收获位置旋转到检索位置。 提取出水滴，第二自动致动器机构将收费头枢转成低温气体的流动流，以冻结液滴和晶体。

公开(公告)号：US07153359B2

公开(公告)日：2006-12-26

申请号：US10254013

申请日：2002-09-25

申请人： Masashi Maekawa ,  Keiichi Fukuyama ,  Michinori Iwai ,  Kohei Tanaka

发明人： Masashi Maekawa ,  Keiichi Fukuyama ,  Michinori Iwai ,  Kohei Tanaka

IPC分类号： C30B13/28

CPC分类号： H01L21/02691 ,  C30B13/00 ,  C30B29/06 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/66757 ,  Y10S117/904 ,  Y10S117/905

摘要： A crystalline semiconductor film, the crystalline semiconductor film being formed over an insulative substrate, and including semiconductor crystal grains laterally grown along a surface of the insulative substrate, wherein the laterally-grown semiconductor crystal grains are in contact with each other at grain boundaries, and a distance between adjacent grain boundaries is equal to or smaller than two times a lateral growth distance of the semiconductor crystal grains.

公开(公告)号：US5723337A

公开(公告)日：1998-03-03

申请号：US511752

申请日：1995-08-07

申请人： Georg Muller ,  Rainer Marten ,  Albrecht Seidl

发明人： Georg Muller ,  Rainer Marten ,  Albrecht Seidl

IPC分类号： G01N27/411 ,  C30B13/00 ,  C30B13/28 ,  C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  G01N27/30 ,  G01N27/416 ,  H01L21/208 ,  G01N33/20 ,  G01N27/26

CPC分类号： C30B29/06 ,  C30B13/00 ,  C30B15/00 ,  Y10S73/09 ,  Y10T117/1008 ,  Y10T436/12 ,  Y10T436/209163

摘要： A method for measuring and controlling the oxygen concentration in silicon melts which are contained in a silica glass crucible or which can be touched by a silica glass surface can especially be used for achieving a defined, uniform axial and radial oxygen concentration in a growing silicon crystal. The measurement of the oxygen concentration is realized by an electrochemical solid ionic sensor dipped into the melt; the voltage is measured between the sensor and the growing silicon crystal. The oxygen concentration in the melt is controlled by applying a voltage between crystal and silica glass crucible. The apparatus for putting the method into practice includes an electrochemical solid ionic sensor formed of a silica glass tube which encloses a metal/metal oxide mixture, contacted by a metal wire.

摘要翻译： 用于测量和控制二氧化硅玻璃坩埚中包含的或可被二氧化硅玻璃表面接触的硅熔体中的氧浓度的方法可以用于在生长的硅晶体中实现规定的均匀的轴向和径向氧浓度 。 通过浸入熔体中的电化学固体离子传感器实现氧浓度的测量; 在传感器和生长的硅晶体之间测量电压。 通过在晶体和石英玻璃坩埚之间施加电压来控制熔体中的氧浓度。 用于实施该方法的设备包括由石英玻璃管形成的电化学固体离子传感器，其包围金属/金属氧化物混合物，金属线接触。