摘要:
Embodiments disclosed herein include a method for determining a temperature error of a pyrometer. In an embodiment, the method comprises measuring a first signal with a first sensor of the pyrometer and measuring a second signal with a second sensor of the pyrometer. In an embodiment, the method further comprises determining a reflectivity of a reflector plate from the first signal and the second signal, and determining the temperature error using the reflectivity.
摘要:
A wire drawing process of a light storage wire includes a feeding step, a mixing step, a first drying step, a hot melt extrusion step, a first cooling step, a shaping/organizing wire step, a hot-temperature remodeling step, a stretching step, a second cooling step, a strand winding/rolling step, and a second drying step.
摘要:
A solid sintered ceramic article may include Y2O3 at a concentration of approximately 40 molar % to approximately 60 molar % and Er2O3 at a concentration of approximately 400 molar % to approximately 60 molar %. An article may include a body and a plasma resistant ceramic coating on at least one surface of the body. The plasma resistant ceramic coating comprising Y2O3 at a concentration of approximately 30 molar % to approximately 60 molar %, Er2O3 at a concentration of approximately 20 molar % to approximately 60 molar %, and at least one of ZrO2, Gd2O3 or SiO2 at a concentration of over 0 molar % to approximately 30 molar %.
摘要:
Provided are methods of catalytic atomic layer deposition using pyridine-based catalysts. Certain methods comprising activating a reaction between at least two film precursors and certain other methods of catalytic deposition of SiO2, both of which comprise using a pyridine-based catalyst.
摘要:
Methods and apparatus for providing a gas to a slit valve opening are provided herein. In one embodiment, a slit valve is described. The slit valve includes a housing having an opening, the opening defined by a plurality of interior sidewalls and sized to allow a substrate to pass therethrough, a door adapted to selectively seal the opening, a gas inlet formed in the housing, and a plurality of nozzles disposed in or on at least one of the plurality of interior sidewalls, each of the plurality of nozzles in fluid communication with the gas inlet and the opening.
摘要:
A method for manufacturing a composite fabric includes the steps of feeding, mixing and stirring, first drying, hot melt extrusion, first cooling, stretch extension, second cooling, winding-strands-into-roll, second drying, and weaving. The composite fabric is composed of multiple first threads and multiple second threads which are woven to the first threads. The first threads and the second threads are respectively reflective threads and glowing threads so that the composite fabric includes both features of light reflection and glowing in dark.
摘要:
The thread drawing processes include the steps of feeding, mixing and stirring, first drying, hot melt extrusion, first cooling, stretch extension, second cooling, winding-strands-into-roll, and second drying. The threads made by the processes mainly use thermoplastic polyurethane particles which are easily prepared. When fabric made by the threads is attached to objects, the fabric is flat and neat.
摘要:
A lamp assembly for the lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100° C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair of leads, the bulb having an inner surface and an outer surface, a lamp base configured to receive the pair of leads and at least a portion of the bulb having a surface treatment adapted to reflect light away from the lamp base. In another embodiment, a sleeve covers the lamp base, which has a cross-sectional area less than about 1.2 times the cross-sectional area of the bulb.
摘要:
Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.
摘要:
Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.