Method of catalytic film deposition
    4.
    发明授权
    Method of catalytic film deposition 有权
    催化膜沉积方法

    公开(公告)号:US09200365B2

    公开(公告)日:2015-12-01

    申请号:US13967760

    申请日:2013-08-15

    申请人: David Thompson

    发明人: David Thompson

    摘要: Provided are methods of catalytic atomic layer deposition using pyridine-based catalysts. Certain methods comprising activating a reaction between at least two film precursors and certain other methods of catalytic deposition of SiO2, both of which comprise using a pyridine-based catalyst.

    摘要翻译: 提供使用吡啶类催化剂的催化原子层沉积的方法。 某些方法包括激活至少两种膜前体之间的反应和催化沉积SiO 2的某些其它方法,二者都包括使用基于吡啶的催化剂。

    Balanced purge slit valve
    5.
    发明授权
    Balanced purge slit valve 失效
    平衡吹扫狭缝阀

    公开(公告)号:US08011381B2

    公开(公告)日:2011-09-06

    申请号:US12244643

    申请日:2008-10-02

    IPC分类号: B65D43/14 F16K27/00

    CPC分类号: H01L21/67126 Y10T137/4259

    摘要: Methods and apparatus for providing a gas to a slit valve opening are provided herein. In one embodiment, a slit valve is described. The slit valve includes a housing having an opening, the opening defined by a plurality of interior sidewalls and sized to allow a substrate to pass therethrough, a door adapted to selectively seal the opening, a gas inlet formed in the housing, and a plurality of nozzles disposed in or on at least one of the plurality of interior sidewalls, each of the plurality of nozzles in fluid communication with the gas inlet and the opening.

    摘要翻译: 本文提供了用于向狭缝阀开口提供气体的方法和设备。 在一个实施例中,描述了狭缝阀。 狭缝阀包括具有开口的壳体,所述开口由多个内侧壁限定并且尺寸设计成允许基底通过;适于选择性地密封开口的门,形成在壳体中的气体入口,以及多个 喷嘴设置在所述多个内侧壁中的至少一个中或所述多个内侧壁中的至少一个中,所述多个喷嘴中的每一个与所述气体入口和所述开口流体连通。

    Lamp for rapid thermal processing chamber
    8.
    发明授权
    Lamp for rapid thermal processing chamber 有权
    快速热处理腔灯

    公开(公告)号:US09536728B2

    公开(公告)日:2017-01-03

    申请号:US11675150

    申请日:2007-02-15

    摘要: A lamp assembly for the lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100° C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair of leads, the bulb having an inner surface and an outer surface, a lamp base configured to receive the pair of leads and at least a portion of the bulb having a surface treatment adapted to reflect light away from the lamp base. In another embodiment, a sleeve covers the lamp base, which has a cross-sectional area less than about 1.2 times the cross-sectional area of the bulb.

    摘要翻译: 公开了一种用于灯组件的灯组件,其适用于衬底热处理室以将衬底加热至高达至少约1100℃的温度。 在一个实施例中,灯组件包括灯泡,其包围附接到一对引线的至少一个辐射生成细丝,灯泡具有内表面和外表面,灯基座被配置为接收一对引线和至少一部分 具有适于将光反射离开灯座的表面处理的灯泡。 在另一个实施例中,套筒覆盖灯座,其具有小于灯泡横截面面积的约1.2倍的横截面面积。

    Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
    10.
    发明授权
    Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill 有权
    在TEOS /臭氧CVD期间使用TEOS上升的方法来改善间隙填充

    公开(公告)号:US07037859B2

    公开(公告)日:2006-05-02

    申请号:US10979471

    申请日:2004-11-01

    IPC分类号: H01L21/31

    摘要: Embodiments of the present invention provide methods, apparatuses, and devices related to chemical vapor deposition of silicon oxide. In one embodiment, a single-step deposition process is used to efficiently form a silicon oxide layer exhibiting high conformality and favorable gap-filling properties. During a pre-deposition gas flow stabilization phase and an initial deposition stage, a relatively low ratio of silicon-containing gas:oxidant deposition gas is flowed, resulting in formation of highly conformal silicon oxide at relatively slow rates. Over the course of the deposition process step, the ratio of silicon-containing gas:oxidant gas is increased, resulting in formation of less-conformal oxide material at relatively rapid rates during later stages of the deposition process step.

    摘要翻译: 本发明的实施例提供了与氧化硅的化学气相沉积相关的方法,装置和装置。 在一个实施例中,使用单步沉积工艺来有效地形成表现出高共形性和良好间隙填充性能的氧化硅层。 在预沉积气体流动稳定阶段和初始沉积阶段期间,含硅气体:氧化剂沉积气体的比例相对较低,从而以相对较慢的速率形成高度保形的氧化硅。 在沉积工艺步骤的过程中,含硅气体:氧化剂气体的比率增加,导致在沉积工艺步骤的后续阶段以相对较快的速率形成较小保形的氧化物材料。