公开(公告)号：US20160268452A9

公开(公告)日：2016-09-15

申请号：US14468219

申请日：2014-08-25

申请人： Advanced Silicon Group, Inc.

发明人： Marcie R. Black ,  Joanne Forziati ,  Michael Jura ,  Jeff Miller ,  Brian Murphy ,  Adam Standley

IPC分类号： H01L31/0236 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/02366 ,  H01L21/283 ,  H01L21/28506 ,  H01L29/0676 ,  H01L29/413 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/068 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/547

摘要： A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed.

公开(公告)号：US09099583B2

公开(公告)日：2015-08-04

申请号：US13353087

申请日：2012-01-18

申请人： Faris Modawar ,  Marcie R. Black ,  Brian Murphy ,  Jeff Miller ,  Mike Jura

发明人： Faris Modawar ,  Marcie R. Black ,  Brian Murphy ,  Jeff Miller ,  Mike Jura

IPC分类号： H01L29/06 ,  H01L31/0352 ,  H01L31/028 ,  H01L31/0288 ,  H01L31/18

CPC分类号： H01L31/035227 ,  H01L31/02167 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y10S977/762

摘要： In one aspect, the present disclosure relates to a device including a silicon substrate, wherein at least a portion of the substrate surface can be a silicon nanowire array; and a layer of alumina covering the silicon nanowire array. In some embodiments, the device can be a solar cell. In some embodiments, the device can be a p-n junction. In some embodiments, the p-n junction can be located below the bottom surface the nanowire array.

摘要翻译： 一方面，本发明涉及包括硅衬底的器件，其中衬底表面的至少一部分可以是硅纳米线阵列; 以及覆盖硅纳米线阵列的氧化铝层。 在一些实施例中，该装置可以是太阳能电池。 在一些实施例中，该装置可以是p-n结。 在一些实施例中，p-n结可以位于纳米线阵列的底表面下方。

公开(公告)号：US08852981B2

公开(公告)日：2014-10-07

申请号：US13622864

申请日：2012-09-19

申请人： Bandgap Engineering, Inc.

发明人： Marcie R. Black ,  Joanne Forziati ,  Michael Jura ,  Jeff Miller ,  Brian Murphy ,  Adam Standley

IPC分类号： H01L21/00 ,  H01L21/283 ,  H01L21/285 ,  H01L29/06 ,  H01L29/41 ,  H01L31/0224 ,  H01L31/0352

CPC分类号： H01L31/02366 ,  H01L21/283 ,  H01L21/28506 ,  H01L29/0676 ,  H01L29/413 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/068 ,  H01L31/18 ,  Y02E10/50 ,  Y02E10/547

摘要： A process is provided for contacting a nanostructured surface. In that process, a substrate is provided having a nanostructured material on a surface, the substrate being conductive and the nanostructured material being coated with an insulating material. A portion of the nanostructured material is at least partially removed. A conductor is deposited on the substrate in such a way that it is in electrical contact with the substrate through the area where the nanostructured material has been at least partially removed.

摘要翻译： 提供了一种使纳米结构化表面接触的方法。 在该过程中，提供在表面上具有纳米结构材料的基底，该基底是导电的，并且纳米结构材料被涂覆有绝缘材料。 至少部分地去除纳米结构材料的一部分。 导体以这样的方式沉积在基板上，使得其通过至少部分去除纳米结构材料的区域与基板电接触。

公开(公告)号：US20150017802A1

公开(公告)日：2015-01-15

申请号：US14329975

申请日：2014-07-13

申请人： Bandgap Engineering, Inc.

发明人： Joanne Yim ,  Jeff Miller ,  Michael Jura ,  Marcie R. Black ,  Joanne Forziati ,  Brian Murphy ,  Adam Standley

IPC分类号： H01L21/324 ,  H01L21/48

CPC分类号： C23F1/30 ,  C30B29/06 ,  C30B29/60 ,  H01L21/02603 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/4885 ,  H01L29/0669 ,  H01L29/0676 ,  H01L29/413 ,  H01L35/10 ,  H01L2924/0002 ,  H01M4/0426 ,  H01M4/134 ,  H01M4/386 ,  H01M10/0525 ,  H01M2004/027

摘要： In an aspect of this disclosure, a method is provided comprising the steps of: (a) providing a silicon-containing substrate, (b) depositing a first metal on the substrate, (c) etching the substrate produced by step (b) using a first etch, and (d) etching the substrate produced by step (c) using a second etch, wherein the second etch is more aggressive towards the deposited metal than the first etch, wherein the result of step (d) comprises silicon nanowires. The method may further comprise, for example, steps (b1) subjecting the first metal to a treatment which causes it to agglomerate and (b2) depositing a second metal.

摘要翻译： 在本公开的一方面，提供了一种方法，包括以下步骤：（a）提供含硅衬底，（b）在衬底上沉积第一金属，（c）使用步骤（b）制备的衬底 第一蚀刻，和（d）使用第二蚀刻蚀刻由步骤（c）制备的衬底，其中所述第二蚀刻比所述第一蚀刻对所沉积的金属更具侵蚀性，其中步骤（d）的结果包括硅纳米线。 该方法还可以包括例如步骤（b1）使第一金属经受使其凝聚的处理和（b2）沉积第二金属。

公开(公告)号：US08450599B2

公开(公告)日：2013-05-28

申请号：US12619092

申请日：2009-11-16

申请人： Brent A. Buchine ,  Faris Modawar ,  Marcie R. Black

发明人： Brent A. Buchine ,  Faris Modawar ,  Marcie R. Black

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/035254 ,  H01L31/02363 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/068 ,  Y02E10/50

摘要： A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.

摘要翻译： 提供光伏器件。 它包括至少两个电触点，p型掺杂剂和n型掺杂剂。 它还包括接触大块区域的排列阵列中的体区域和纳米线。 阵列中的所有纳米线具有一种主要类型的掺杂剂n或p，并且本体区域的至少一部分还包括该主要类型的掺杂剂。 包含主要类型掺杂剂的体区的部分通常接触纳米线阵列。 光伏器件的p-n结将在大块区域中被发现。 光伏器件通常包括硅。

公开(公告)号：US08416485B2

公开(公告)日：2013-04-09

申请号：US13154107

申请日：2011-06-06

申请人： Marcie R. Black ,  Brent A. Buchine

发明人： Marcie R. Black ,  Brent A. Buchine

IPC分类号： G02F1/03

CPC分类号： G02F2/02 ,  G02F2001/01791 ,  H01L31/0547 ,  H01L31/055 ,  Y02E10/52

摘要： A nanostructured optoelectronic device is provided which comprises a nanostructured material and a host material intermingled with the nanostructured material. The host material may have a higher index of refraction than the nanostructured material. The host material's index of refraction may be chosen to maximize the effective active area of the device. In an alternative embodiment, the host material comprises scattering centers or absorption/luminescence centers which absorb light and reemit the light at a different energy or both.

摘要翻译： 提供纳米结构的光电器件，其包括纳米结构材料和与纳米结构材料混合的主体材料。 主体材料可能具有比纳米结构材料更高的折射率。 可以选择主体材料的折射率以使器件的有效有效面积最大化。 在替代实施例中，主体材料包括散射中心或吸收/发光中心，吸收/发光中心吸收光并以不同的能量或两者重新发光。

公开(公告)号：US20120181502A1

公开(公告)日：2012-07-19

申请号：US13353080

申请日：2012-01-18

申请人： Faris Modawar ,  Marcie R. Black ,  Brian Murphy ,  Jeff Miller ,  Mike Jura

发明人： Faris Modawar ,  Marcie R. Black ,  Brian Murphy ,  Jeff Miller ,  Mike Jura

IPC分类号： H01L29/06 ,  H01L21/20 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： H01L31/035227 ,  H01L31/02167 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y10S977/762

摘要： In one aspect, the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure having a non-nanostructured surface, having a top surface and a bottom surface, located on the same side of the substrate as the array of silicon nanowires; and an electrical contact in contact with the top surface of the contacting structure. In some embodiments, the device includes an aluminum oxide passivation layer over the array of nanowires. In some embodiments, the layer of aluminum oxide is deposited via atomic layer deposition.

摘要翻译： 一方面，本发明涉及包括具有顶表面和底表面的基底的装置; 具有基底和顶表面的纳米线阵列，所述基底接触所述基底的顶表面; 具有非纳米结构表面的接触结构，具有顶表面和底表面，位于与硅纳米线阵列相同的衬底侧; 以及与接触结构的顶表面接触的电接触。 在一些实施例中，该器件在纳米线阵列上包括氧化铝钝化层。 在一些实施例中，通过原子层沉积沉积氧化铝层。

公开(公告)号：US07973995B2

公开(公告)日：2011-07-05

申请号：US12418229

申请日：2009-04-03

申请人： Marcie R. Black ,  Brent A. Buchine

发明人： Marcie R. Black ,  Brent A. Buchine

IPC分类号： G02F1/03

CPC分类号： G02F2/02 ,  G02F2001/01791 ,  H01L31/0547 ,  H01L31/055 ,  Y02E10/52

摘要： A nanostructured optoelectronic device is provided which comprises a nanostructured material and a host material intermingled with the nanostructured material. The host material may have a higher index of refraction than the nanostructured material. The host material's index of refraction may be chosen to maximize the effective active area of the device. In an alternative embodiment, the host material comprises scattering centers or absorption/luminescence centers which absorb light and reemit the light at a different energy or both.

摘要翻译： 提供纳米结构的光电器件，其包括纳米结构材料和与纳米结构材料混合的主体材料。 主体材料可能具有比纳米结构材料更高的折射率。 可以选择主体材料的折射率以使器件的有效有效面积最大化。 在替代实施例中，主体材料包括散射中心或吸收/发光中心，吸收/发光中心吸收光并以不同的能量或两者重新发光。

公开(公告)号：US08829485B2

公开(公告)日：2014-09-09

申请号：US13353091

申请日：2012-01-18

申请人： Faris Modawar ,  Marcie R. Black ,  Brian Murphy ,  Jeff Miller ,  Mike Jura

发明人： Faris Modawar ,  Marcie R. Black ,  Brian Murphy ,  Jeff Miller ,  Mike Jura

IPC分类号： H01L29/06 ,  H01L31/0352

CPC分类号： H01L31/035227 ,  H01L31/02167 ,  H01L31/028 ,  H01L31/0284 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1868 ,  Y10S977/762

摘要： Another aspect of the present disclosure relates to a device including a substrate, having a top surface and a bottom surface; an array of nanowires having a base and a top surface, the base contacting the top surface of the substrate; a contacting structure including the same material as the substrate having a non-nanostructured surface of a dimension suitable for forming an electrical contact, located on the same side of the substrate as the array of silicon nanowires; wherein the contacting structure is doped with a greater impurity concentration than the nanowire array, thereby forming a selective emitter.

摘要翻译： 本公开的另一方面涉及包括具有顶表面和底表面的基底的装置; 具有基底和顶表面的纳米线阵列，所述基底接触所述基底的顶表面; 接触结构包括与衬底相同的材料，其具有适于形成电接触的尺寸的非纳米结构化表面，位于与硅纳米线阵列相同的衬底侧; 其中所述接触结构被掺杂有比所述纳米线阵列更大的杂质浓度，由此形成选择性发射极。

公开(公告)号：US20130247966A1

公开(公告)日：2013-09-26

申请号：US13902332

申请日：2013-05-24

申请人： Bandgap Engineering, Inc.

发明人： Brent A. Buchine ,  Faris Modawar ,  Marcie R. Black

IPC分类号： H01L31/0352

CPC分类号： H01L31/035254 ,  H01L31/02363 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/068 ,  Y02E10/50

摘要： A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.