公开(公告)号：US20140080262A1

公开(公告)日：2014-03-20

申请号：US14016754

申请日：2013-09-03

申请人： Yoshitaka NISHIMURA ,  Akira MOROZUMI ,  Kazunaga OHNISHI ,  Eiji MOCHIZUKI ,  Yoshikazu TAKAHASHI

发明人： Yoshitaka NISHIMURA ,  Akira MOROZUMI ,  Kazunaga OHNISHI ,  Eiji MOCHIZUKI ,  Yoshikazu TAKAHASHI

IPC分类号： H01L23/00 ,  H01L23/34

CPC分类号： H01L23/34 ,  H01L23/3735 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/3511 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/341 ,  H05K3/3463 ,  H01L2924/01083 ,  H01L2924/00014 ,  H01L2924/3512 ,  H01L2924/00

摘要： A method for producing a semiconductor device includes solder-connecting a semiconductor chip, onto an insulating substrate including a ceramic board and having conductor layers on two surfaces thereof, with a lead-free solder; warping a radiating base such that a surface of the radiating base on a side opposite to the insulating substrate is convex; and solder-connecting the insulating substrate onto the warped radiating base with the lead-free solder so as to provide a substantially flat solder-connected radiating base.

摘要翻译： 一种半导体器件的制造方法，包括使用无铅焊料将半导体芯片焊接到包括陶瓷板的绝缘基板上，并且在其两个表面上具有导体层; 使辐射基体的与绝缘基板相反的一侧的表面翘曲为凸部; 并用无铅焊料将绝缘基板焊接到翘曲的辐射基底上，以便提供基本上平坦的焊接连接的散热基座。

公开(公告)号：US20110037166A1

公开(公告)日：2011-02-17

申请号：US12735926

申请日：2009-04-08

申请人： Yoshinari Ikeda ,  Shin Soyano ,  Akira Morozumi ,  Kenji Suzuki ,  Yoshikazu Takahashi

发明人： Yoshinari Ikeda ,  Shin Soyano ,  Akira Morozumi ,  Kenji Suzuki ,  Yoshikazu Takahashi

IPC分类号： H01L23/34 ,  H01L21/00

CPC分类号： H01L24/80 ,  H01L21/4882 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/117 ,  H01L2224/05554 ,  H01L2224/29 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/29298 ,  H01L2224/83205

摘要： The object of the present invention is to efficiently dissipate heat from the upper and lower main surfaces of a semiconductor device carrying a semiconductor element. A semiconductor device (1) is provided with an insulating substrate (10A), an insulating substrate (10B) provided so as to face the insulating substrate (10A), and a semiconductor element (20) disposed between the insulating substrate (10A) and the insulating substrate (10B) and having a collector electrode and an emitter electrode provided on the side opposite to that of the collector electrode. The collector electrode is electrically connected to a metal foil (10ac) provided on the insulating substrate (10A), and the emitter electrode is electrically connected to the metal foil (10bc) provided on the insulating substrate (10B). As a result, heat generated by the semiconductor element (20) is efficiently dissipated from the upper and lower main surfaces of the semiconductor device (1).

摘要翻译： 本发明的目的是有效地从携带半导体元件的半导体器件的上主表面和下主表面散热。 半导体器件（1）设置有绝缘基板（10A），设置为与绝缘基板（10A）相对的绝缘基板（10B），以及设置在绝缘基板（10A）和 绝缘基板（10B），并且具有集电极和设置在与集电极的相反侧的发射极。 集电极电连接到设置在绝缘基板（10A）上的金属箔（10ac），发射电极与设在绝缘基板（10B）上的金属箔（10bc）电连接。 结果，由半导体元件（20）产生的热量有效地从半导体器件（1）的上主表面和下主表面消散。

公开(公告)号：US20090166851A1

公开(公告)日：2009-07-02

申请号：US12379815

申请日：2009-03-02

申请人： Takatoshi Kobayashi ,  Tadashi Miyasaka ,  Katsumi Yamada ,  Akira Morozumi

发明人： Takatoshi Kobayashi ,  Tadashi Miyasaka ,  Katsumi Yamada ,  Akira Morozumi

IPC分类号： H01L23/34

CPC分类号： H01L24/32 ,  H01L23/3735 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L25/162 ,  H01L25/18 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/01082 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A power semiconductor module has a circuit assembly body, which includes a metal base, a ceramic substrate, and a power semiconductor chip, and is combined with a package having terminals formed integrally. The ceramic substrate of the module has a structure such that an upper circuit plate and a lower plate are joined to both sides of a ceramic plate, respectively, and the metal base and the ceramic substrate are fixed to one another using solder, thereby improving reliability and lengthening a life of a power semiconductor module by optimizing a ceramic substrate and a metal base thereof, the dimensions thereof, and material and method used for a join formed between the ceramic substrate and metal base.

公开(公告)号：US20090093109A1

公开(公告)日：2009-04-09

申请号：US12213923

申请日：2008-06-26

申请人： Akira Morozumi ,  Shin Soyano ,  Yoshikazu Takahashi

发明人： Akira Morozumi ,  Shin Soyano ,  Yoshikazu Takahashi

IPC分类号： H01L21/768

CPC分类号： C22C13/02 ,  B23K35/262 ,  H01L24/29 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/1517 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： In producing a semiconductor device, a solder alloy is prepared to contain antimony in a range of from 3 to 5 wt %, a trace amount of germanium, and a balance of tin. An insulative substrate having conductor patterns on both surfaces thereof is prepared, and a heat sink plate is mounted on a back surface of the insulative substrate by a soldering process using the solder alloy at a temperature ranging from 310 C.° to 320 C.° in a hydrogen reducing furnace. A semiconductor chip is mounted on a front surface of the insulative substrate.

摘要翻译： 在制造半导体器件时，制备焊料合金以含有3至5重量％的锑，痕量的锗和余量的锡。 准备在其两面具有导体图形的绝缘基板，并且通过使用焊料合金在310℃至320℃的温度范围内的焊接工艺将散热板安装在绝缘基板的背面上。 在氢还原炉中。 半导体芯片安装在绝缘基板的前表面上。

公开(公告)号：US5869890A

公开(公告)日：1999-02-09

申请号：US938484

申请日：1997-09-30

申请人： Masaharu Nishiura ,  Akira Morozumi ,  Tomio Shimizu ,  Katsumi Yamada ,  Shigemasa Saito

发明人： Masaharu Nishiura ,  Akira Morozumi ,  Tomio Shimizu ,  Katsumi Yamada ,  Shigemasa Saito

IPC分类号： H01L23/02 ,  H01L21/48 ,  H01L23/15 ,  H01L23/24 ,  H01L23/373 ,  H01L23/48 ,  H01L23/06 ,  H01L23/10

CPC分类号： H01L23/15 ,  C04B35/119 ,  C04B35/6263 ,  C04B35/6264 ,  C04B35/6342 ,  C04B37/021 ,  C04B37/026 ,  H01L21/4807 ,  H01L23/24 ,  H01L23/3731 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/5436 ,  C04B2235/5463 ,  C04B2235/656 ,  C04B2235/72 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/125 ,  C04B2237/127 ,  C04B2237/343 ,  C04B2237/407 ,  C04B2237/704 ,  C04B2237/86 ,  H01L2224/48091 ,  H01L2224/48472 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01039 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/13055 ,  H01L2924/181

摘要： A Ceramic Bonding Copper (CBC) substrate used in semiconductor modules includes a ceramic plate having foil-shaped copper plates bonded to the ceramic plate by the direct copper bonding method. A circuit pattern is formed on one of the copper plates. The ceramic plate is fabricated by sintering at high temperature an alumina powder compact containing zirconia and one or more of the following additives: yttria, calcia, magnesia, and ceria. The flexural strength and the thermal conductivity of the alumnina ceramic plate of the invention are remarkably improved, facilitating a reduction in the thickness of the ceramic plate. The reduction in thickness of the CBC substrate further improves the ability of the semiconductor device to radiate heat and therefore increases the current carrying capability of the semiconductor device.

摘要翻译： 用于半导体模块的陶瓷接合铜（CBC）基板包括通过直接铜接合方法将具有箔形铜板的陶瓷板接合到陶瓷板上。 电路图案形成在铜板之一上。 陶瓷板通过在高温下烧结含氧化锆的氧化铝粉末和一种或多种以下添加剂：氧化钇，氧化钙，氧化镁和二氧化铈来制造。 本发明的铝合金陶瓷板的弯曲强度和热导率显着提高，有利于陶瓷板的厚度减小。 CBC基板的厚度的减小进一步提高了半导体器件辐射热量的能力，从而提高了半导体器件的载流能力。

公开(公告)号：US09293391B2

公开(公告)日：2016-03-22

申请号：US14351033

申请日：2012-09-05

申请人： Hiromichi Gohara ,  Akira Morozumi ,  Takeshi Ichimura

发明人： Hiromichi Gohara ,  Akira Morozumi ,  Takeshi Ichimura

IPC分类号： H01L23/473 ,  H01L23/373 ,  H05K7/20 ,  F28F3/12 ,  F28F9/02 ,  F28F3/02 ,  H02M7/00

CPC分类号： H01L23/473 ,  F28F3/02 ,  F28F3/12 ,  F28F9/026 ,  H01L23/3735 ,  H01L2924/0002 ,  H02M7/003 ,  H05K7/20927 ,  H01L2924/00

摘要： A semiconductor module cooler for supplying a refrigerant from exterior into a water jacket and cooling a semiconductor device disposed on an outer surface of the cooler, includes a heat sink thermally connected to the semiconductor device; a first flow path extending from a refrigerant inlet and arranged with a guide portion having an inclined surface for guiding the refrigerant toward one side surface of the heat sink; a second flow path extending toward a refrigerant outlet and formed with a sidewall parallel to the other side surface of the heat sink; a flow velocity adjustment plate disposed in the second flow path and formed parallel to the other side surface of the heat sink at a distance therefrom; and a third flow path formed at a position communicating the first flow path and the second flow path. The heat sink is disposed in the third flow path.

摘要翻译： 一种半导体模块冷却器，用于将制冷剂从外部供应到水套中并冷却设置在所述冷却器的外表面上的半导体装置，所述半导体模块冷却器包括热连接到所述半导体器件的散热器; 第一流路，其从制冷剂入口延伸并配置有具有倾斜面的引导部，用于将制冷剂导向散热器的一个侧面; 向制冷剂出口延伸并形成有与散热片的另一侧面平行的侧壁的第二流路; 流量调节板，设置在所述第二流路中并与所述散热器的另一侧表面平行; 以及形成在连通第一流路和第二流路的位置的第三流路。 散热器设置在第三流路中。

公开(公告)号：US08450845B2

公开(公告)日：2013-05-28

申请号：US12735926

申请日：2009-04-08

申请人： Yoshinari Ikeda ,  Shin Soyano ,  Akira Morozumi ,  Kenji Suzuki ,  Yoshikazu Takahashi

发明人： Yoshinari Ikeda ,  Shin Soyano ,  Akira Morozumi ,  Kenji Suzuki ,  Yoshikazu Takahashi

IPC分类号： H01L23/34

CPC分类号： H01L24/80 ,  H01L21/4882 ,  H01L23/3107 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/117 ,  H01L2224/05554 ,  H01L2224/29 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/371 ,  H01L2224/40137 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/29298 ,  H01L2224/83205

摘要： The object of the present invention is to efficiently dissipate heat from the upper and lower main surfaces of a semiconductor device carrying a semiconductor element. A semiconductor device (1) is provided with an insulating substrate (10A), an insulating substrate (10B) provided so as to face the insulating substrate (10A), and a semiconductor element (20) disposed between the insulating substrate (10A) and the insulating substrate (10B) and having a collector electrode and an emitter electrode provided on the side opposite to that of the collector electrode. The collector electrode is electrically connected to a metal foil (10ac) provided on the insulating substrate (10A), and the emitter electrode is electrically connected to the metal foil (10bc) provided on the insulating substrate (10B). As a result, heat generated by the semiconductor element (20) is efficiently dissipated from the upper and lower main surfaces of the semiconductor device (1).

摘要翻译： 本发明的目的是有效地从携带半导体元件的半导体器件的上主表面和下主表面散热。 半导体器件（1）设置有绝缘基板（10A），设置为与绝缘基板（10A）相对的绝缘基板（10B），以及设置在绝缘基板（10A）和 绝缘基板（10B），并且具有集电极和设置在与集电极的相反侧的发射极。 集电极电连接到设置在绝缘基板（10A）上的金属箔（10ac），发射电极与设在绝缘基板（10B）上的金属箔（10bc）电连接。 结果，由半导体元件（20）产生的热量有效地从半导体器件（1）的上主表面和下主表面消散。

公开(公告)号：US20120139096A1

公开(公告)日：2012-06-07

申请号：US13382621

申请日：2010-07-28

申请人： Hiromichi Gohara ,  Akira Morozumi ,  Keiichi Higuchi

发明人： Hiromichi Gohara ,  Akira Morozumi ,  Keiichi Higuchi

IPC分类号： H01L23/36

CPC分类号： H01L23/473 ,  H01L23/3735 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00

摘要： A semiconductor module including a cooling unit by which a fine cooling effect is obtained is provided. A plurality of cooling flow paths (21c) which communicate with both of a refrigerant introduction flow path which extends from a refrigerant introduction inlet and a refrigerant discharge flow path which extends to a refrigerant discharge outlet are arranged in parallel with one another in a cooling unit (20). Fins (22) are arranged in each cooling flow path (21c). Semiconductor elements (32) and (33) are arranged over the cooling unit (20) so that the semiconductor elements (32) and (33) are thermally connected to the fins (22). By doing so, a semiconductor module (10) is formed. Heat generated by the semiconductor elements (32) and (33) is conducted to the fins (22) arranged in each cooling flow path (21c) and is removed by a refrigerant which flows along each cooling flow path (21c).

摘要翻译： 提供一种半导体模块，其包括获得精细冷却效果的冷却单元。 与从制冷剂导入口延伸的制冷剂导入流路和延伸到制冷剂排出口的制冷剂排出流路连通的多个冷却流路（21c）在冷却单元中彼此平行地配置 （20）。 翅片（22）布置在每个冷却流路（21c）中。 半导体元件（32）和（33）布置在冷却单元（20）上方，使得半导体元件（32）和（33）热连接到翅片（22）。 通过这样做，形成半导体模块（10）。 由半导体元件（32）和（33）产生的热量被传导到布置在每个冷却流路（21c）中的散热片（22），并且通过沿着每个冷却流路（21c）流动的制冷剂去除。

公开(公告)号：US07816249B2

公开(公告)日：2010-10-19

申请号：US12213923

申请日：2008-06-26

申请人： Akira Morozumi ,  Shin Soyano ,  Yoshikazu Takahashi

发明人： Akira Morozumi ,  Shin Soyano ,  Yoshikazu Takahashi

IPC分类号： H01L21/44

CPC分类号： C22C13/02 ,  B23K35/262 ,  H01L24/29 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32225 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/1517 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929

摘要： In producing a semiconductor device, a solder alloy is prepared to contain antimony in a range of from 3 to 5 wt %, a trace amount of germanium, and a balance of tin. An insulative substrate having conductor patterns on both surfaces thereof is prepared, and a heat sink plate is mounted on a back surface of the insulative substrate by a soldering process using the solder alloy at a temperature ranging from 310 C.° to 320 C.° in a hydrogen reducing furnace. A semiconductor chip is mounted on a front surface of the insulative substrate.

摘要翻译： 在制造半导体器件时，制备焊料合金以含有3至5重量％的锑，痕量的锗和余量的锡。 准备在其两面具有导体图形的绝缘基板，并且通过使用焊料合金在310℃至320℃的温度范围内的焊接工艺将散热板安装在绝缘基板的背面上。 在氢还原炉中。 半导体芯片安装在绝缘基板的前表面上。

公开(公告)号：US20090130800A1

公开(公告)日：2009-05-21

申请号：US12320028

申请日：2009-01-15

申请人： Susumu Toba ,  Akira Morozumi ,  Kazuo Furihata

发明人： Susumu Toba ,  Akira Morozumi ,  Kazuo Furihata

IPC分类号： H01L21/50

CPC分类号： H05K3/0061 ,  H01L23/373 ,  H01L23/3735 ,  H01L23/5385 ,  H01L25/072 ,  H01L2924/0002 ,  H05K1/142 ,  H05K3/341 ,  H05K3/3452 ,  H05K2201/017 ,  H05K2201/0323 ,  H05K2203/0545 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device includes the steps of bonding a semiconductor chip to a first side of a circuit board, bonding a metal base for dissipating heat produced by the semiconductor chip to a second side of the circuit board, and forming a dam on the metal base by a dam material so as to restrict flow of a solder used in bonding a plurality of the circuit boards to the metal base.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：将半导体芯片接合到电路板的第一侧，将用于将由半导体芯片产生的热量散发到电路板的第二侧的金属基底接合，并形成坝 所述金属基底由坝材料限制，以便限制用于将多个电路板接合到金属基底的焊料的流动。