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179 条记录 (耗时 0.031 秒)

    MEMORY DEVICE, MEMORY SYSTEM, METHOD OF OPERATING MEMORY DEVICE, AND METHOD OF OPERATING MEMORY SYSTEM
    4.
    发明申请
    MEMORY DEVICE, MEMORY SYSTEM, METHOD OF OPERATING MEMORY DEVICE, AND METHOD OF OPERATING MEMORY SYSTEM 有权
    存储器件，存储器系统，操作存储器件的方法和操作存储器系统的方法

    公开(公告)号：US20170062059A1

    公开(公告)日：2017-03-02

    申请号：US15245162

    申请日：2016-08-23

    申请人： Yoon KIM ,  Dong-chan KIM ,  Ji-sang LEE

    发明人： Yoon KIM ,  Dong-chan KIM ,  Ji-sang LEE

    IPC分类号： G11C16/14 ,  G11C16/34 ,  G11C16/08 ,  G11C16/04

    CPC分类号： G11C16/14 ,  G11C11/5635 ,  G11C16/0483 ,  G11C16/107 ,  G11C16/349

    摘要： A memory device, comprising: a memory cell array including a plurality of NAND strings, each NAND string including a plurality of memory cells respectively connected to a plurality of word lines vertically stacked on a substrate; and a control logic configured to generate a pre-programming control signal for memory cells of a first NAND string of the NAND strings such that, before erasing the memory cells of the first NAND string, pre-programming voltages applied to the word lines coupled to the corresponding memory cells of the first NAND string vary based on an operating characteristic of the corresponding memory cells.

    摘要翻译： 一种存储器件，包括：包括多个NAND串的存储单元阵列，每个NAND串包括分别连接到垂直堆叠在衬底上的多个字线的多个存储器单元; 以及控制逻辑，被配置为为NAND串的第一NAND串的存储器单元生成预编程控制信号，使得在擦除第一NAND串的存储单元之前，将预编程电压施加到耦合到 第一NAND串的对应存储单元基于相应的存储单元的工作特性而变化。

    Methods of fabricating memory devices using wet etching and dry etching
    5.
    发明授权
    Methods of fabricating memory devices using wet etching and dry etching 有权
    使用湿蚀刻和干蚀刻制造存储器件的方法

    公开(公告)号：US09484219B2

    公开(公告)日：2016-11-01

    申请号：US14826845

    申请日：2015-08-14

    申请人： Young-Geun Park ,  Wook-Yeol Yi ,  Sang-Yeol Kang ,  Dong-Chan Kim ,  Chang-Mu An ,  Bong-Hyun Kim ,  Han-Jin Lim

    发明人： Young-Geun Park ,  Wook-Yeol Yi ,  Sang-Yeol Kang ,  Dong-Chan Kim ,  Chang-Mu An ,  Bong-Hyun Kim ,  Han-Jin Lim

    IPC分类号： H01L21/8242 ,  H01L21/311 ,  H01L27/108

    CPC分类号： H01L21/31144 ,  H01L21/31111 ,  H01L21/31116 ,  H01L27/10852 ,  H01L27/10855

    摘要： A method of fabricating semiconductor devices may include forming a mold structure on a lower layer, the mold structure including an etch stop layer doped at a first impurity concentration, a lower mold layer doped at a second impurity concentration, and an undoped upper mold layer. The method may include forming a trench exposing the lower layer in the mold structure using dry etching, extending a width of the trench in the etch stop layer using wet etching, and forming a first conductive pattern in the extended width trench, wherein an etch rate of the etch stop layer with respect to the dry etching may be smaller than an etch rate of the lower mold layer with respect to the dry etching, and an etch rate of the etch stop layer with respect to the wet etching may be proportional to the first impurity concentration.

    摘要翻译： 制造半导体器件的方法可以包括在下层上形成模具结构，所述模具结构包括以第一杂质浓度掺杂的蚀刻停止层，以第二杂质浓度掺杂的下模层和未掺杂的上模层。 该方法可以包括使用干蚀刻形成在模具结构中暴露下层的沟槽，使用湿蚀刻在蚀刻停止层中延伸沟槽的宽度，以及在扩展宽度沟槽中形成第一导电图案，其中蚀刻速率 相对于干蚀刻的蚀刻停止层的蚀刻速度可以小于相对于干蚀刻的下模层的蚀刻速率，并且蚀刻停止层相对于湿蚀刻的蚀刻速率可以与 第一杂质浓度。

    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20160064386A1

    公开(公告)日：2016-03-03

    申请号：US14826845

    申请日：2015-08-14

    申请人： Young-Geun PARK ,  Wook-Yeol YI ,  Sang-Yeol KANG ,  Dong-Chan KIM ,  Chang-Mu AN ,  Bong-Hyun KIM ,  Han-Jin LIM

    发明人： Young-Geun PARK ,  Wook-Yeol YI ,  Sang-Yeol KANG ,  Dong-Chan KIM ,  Chang-Mu AN ,  Bong-Hyun KIM ,  Han-Jin LIM

    IPC分类号： H01L27/108 ,  H01L21/311

    CPC分类号： H01L21/31144 ,  H01L21/31111 ,  H01L21/31116 ,  H01L27/10852 ,  H01L27/10855

    摘要： A method of fabricating semiconductor devices may include forming a mold structure on a lower layer, the mold structure including an etch stop layer doped at a first impurity concentration, a lower mold layer doped at a second impurity concentration, and an undoped upper mold layer. The method may include forming a trench exposing the lower layer in the mold structure using dry etching, extending a width of the trench in the etch stop layer using wet etching, and forming a first conductive pattern in the extended width trench, wherein an etch rate of the etch stop layer with respect to the dry etching may be smaller than an etch rate of the lower mold layer with respect to the dry etching, and an etch rate of the etch stop layer with respect to the wet etching may be proportional to the first impurity concentration.

    摘要翻译： 制造半导体器件的方法可以包括在下层上形成模具结构，所述模具结构包括以第一杂质浓度掺杂的蚀刻停止层，以第二杂质浓度掺杂的下模层和未掺杂的上模层。 该方法可以包括使用干蚀刻形成在模具结构中暴露下层的沟槽，使用湿蚀刻在蚀刻停止层中延伸沟槽的宽度，以及在扩展宽度沟槽中形成第一导电图案，其中蚀刻速率 相对于干蚀刻的蚀刻停止层的蚀刻速度可以小于相对于干蚀刻的下模层的蚀刻速率，并且蚀刻停止层相对于湿蚀刻的蚀刻速率可以与 第一杂质浓度。

    Terminal apparatus and method for supporting smart touch operation
    9.
    发明授权
    Terminal apparatus and method for supporting smart touch operation 有权
    支持智能触摸操作的终端设备和方法

    公开(公告)号：US09063654B2

    公开(公告)日：2015-06-23

    申请号：US13603376

    申请日：2012-09-04

    申请人： Dong Chan Shin

    发明人： Dong Chan Shin

    IPC分类号： G06F3/041 ,  G06F3/0488

    CPC分类号： G06F3/04886 ,  G06F3/04883

    摘要： A terminal apparatus includes an interface to detect a touch input, to detect a touch region corresponding to the touch input, and to identify an object that is overlapped by the touch input by at least a reference percentage in the touch region as a first object; a processing unit to generate a second object based on the first object, and to display the second object in an untouched region; and a control unit to execute an operation corresponding to the second object. A method for executing an operation according to a touch input includes detecting a touch input and a corresponding touch region; identifying an object overlapped by at least a reference percentage in the touch region as a first object; generating a second object based on the first object; displaying the second object in an untouched region; and executing an operation corresponding to the second object.

    摘要翻译： 终端装置包括检测触摸输入，检测与触摸输入相对应的触摸区域的接口，并且通过至少以触摸区域的参考百分比来识别与触摸输入重叠的对象作为第一对象; 处理单元，用于基于第一对象生成第二对象，并且将第二对象显示在未触动区域中; 以及控制单元，用于执行与第二对象相对应的操作。 根据触摸输入执行操作的方法包括检测触摸输入和对应的触摸区域; 在所述触摸区域中识别至少与参考百分比重叠的对象作为第一对象; 基于第一对象生成第二对象; 在未触动区域中显示第二个对象; 并执行与第二对象相对应的操作。