公开(公告)号：US08809242B2

公开(公告)日：2014-08-19

申请号：US13280058

申请日：2011-10-24

申请人： Eiji Takano ,  Yoshio Miyazawa ,  Kazuo Negishi

发明人： Eiji Takano ,  Yoshio Miyazawa ,  Kazuo Negishi

IPC分类号： F16C33/20

CPC分类号： C10M157/00 ,  C10M2205/022 ,  C10M2205/028 ,  C10M2207/28 ,  C10M2217/044 ,  C10N2220/021 ,  C10N2220/086 ,  C10N2230/06 ,  C10N2250/141 ,  C10N2250/18

摘要： A lubricant member of a preferred embodiment of the invention is formed, into a stick-shaped body longer in a lengthwise direction than in a diametrical direction, of a mixture including at least a polyamide resin as a thermoplastic resin, an ultrahigh molecular weight polyethylene, and lubricant oil. A film made mainly of the polyamide resin is formed in the outer peripheral surface of the lubricant member. At the inner side of the film, fibrous crystals of the polyamide resin and the ultrahigh molecular weight polyethylene extend in the lengthwise direction of the lubricant member, and multiple pores are formed. With this structure, the lubricant member is produced with excellent workability without sacrificing the mechanical strength and the lubricating property.

摘要翻译： 将本发明的优选实施方案的润滑剂构件形成为至少包含作为热塑性树脂的聚酰胺树脂的混合物，超高分子量聚乙烯等的混合物，在长度方向上比直径方向更长的棒状体， 和润滑油。 主要由聚酰胺树脂制成的薄膜形成在润滑剂部件的外周面上。 在膜的内侧，聚酰胺树脂和超高分子量聚乙烯的纤维状晶体在润滑剂部件的长度方向上延伸，形成多个孔。 采用这种结构，润滑剂部件的加工性能优异，而不会牺牲机械强度和润滑性能。

公开(公告)号：US20100213564A1

公开(公告)日：2010-08-26

申请号：US12556613

申请日：2009-09-10

申请人： Kazumasa Tanida ,  Hideo Numata ,  Eiji Takano

发明人： Kazumasa Tanida ,  Hideo Numata ,  Eiji Takano

IPC分类号： H01L31/0216 ,  H01L31/18

CPC分类号： H01L27/14683 ,  H01L24/13 ,  H01L24/32 ,  H01L27/14618 ,  H01L2224/0554 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05686 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/04953 ,  H01L2924/01026 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A sensor chip includes: a semiconductor substrate that is provided with a light receiving portion on a main surface; a light transmissive member that is provided on the main surface of the semiconductor substrate, enclosing a hollow portion above the light receiving portion, to surround upper and periphery of the light receiving portion; and a light transmissive protective member that is provided on the light transmissive member.

摘要翻译： 传感器芯片包括：在主表面上设置有光接收部分的半导体衬底; 设置在半导体衬底的主表面上的光透射构件，其包围光接收部分上方的中空部分，以围绕光接收部分的上部和外围; 以及设置在透光构件上的透光保护构件。

公开(公告)号：US06214156B1

公开(公告)日：2001-04-10

申请号：US09336674

申请日：1999-06-21

申请人： Eiji Takano ,  Shinya Shimizu

发明人： Eiji Takano ,  Shinya Shimizu

IPC分类号： H05K330

CPC分类号： H01L24/29 ,  H01L21/563 ,  H01L24/11 ,  H01L24/13 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/11 ,  H01L2224/1134 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/451 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73103 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/83191 ,  H01L2224/85148 ,  H01L2224/85909 ,  H01L2224/85951 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  Y10T29/4913 ,  Y10T156/1092 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： One-side ends of fine metal wires are bonded onto pads of a semiconductor chip via wire bonding and the other ends of the fine metal wires are mounted on the board by flip chip.

摘要翻译： 细金属线的单面端通过引线接合结合到半导体芯片的焊盘上，并且金属细线的另一端通过倒装芯片安装在板上。

公开(公告)号：US4501691A

公开(公告)日：1985-02-26

申请号：US414915

申请日：1982-09-03

申请人： Shoichi Tanaka ,  Yoshiharu Tanaka ,  Eiji Takano

发明人： Shoichi Tanaka ,  Yoshiharu Tanaka ,  Eiji Takano

IPC分类号： G21F9/10

CPC分类号： G21F9/10

摘要： A process for treating a radioactive liquid waste is disclosed, in which a radioactive liquid waste containing uranium and .beta.-decay nuclides, daughter nuclides of uranium, is treated by combination of a flocculation method using water glass as pretreatment and a subsequent ion exchange method. An approximately total amount of the uranium and a part of the .beta.-decay nuclides, daughter nuclides of uranium, in the liquid waste are captured by an amorphous silica precipitate formed by addition of the water glass and a remaining part of the .beta.-decay nuclides, daughter nuclides of uranium, is captured thereafter by the ion exchange treatment. The thus captured radioactive materials are respectively eluted from the filtered out precipitate, a radioactive solid waste, and the ion exchanger by acid treatment to be recovered as an acidic solution. Thus, the radioactive materials in the liquid waste are recovered approximately completely, thereby making the radioactivities of a final drain remarkably reduced. The precipitate is then dissolved in an alkali metal hydroxide solution to make the amorphous silica constituting the precipitate regenerated to water glass.

摘要翻译： 公开了一种处理放射性废液的方法，其中含有铀和β-十一碳原子的放射性废液，铀的子核素通过使用水玻璃作为预处理的絮凝法和随后的离子交换法进行组合处理。 通过添加水玻璃形成的无定形二氧化硅沉淀物和剩余部分的β-分解核素，捕获大部分铀和一部分β元素核素（铀的子核素）在液体废物中的总量 ，铀的子核素，之后通过离子交换处理被捕获。 这样捕获的放射性物质分别从过滤出的沉淀物，放射性固体废物和通过酸处理的离子交换剂洗脱作为酸性溶液回收。 因此，液体废物中的放射性物质大致完全回收，从而使最终排放的放射性明显降低。 然后将沉淀溶解在碱金属氢氧化物溶液中，使构成沉淀物的无定形二氧化硅再生成水玻璃。

公开(公告)号：US08704337B2

公开(公告)日：2014-04-22

申请号：US12880838

申请日：2010-09-13

申请人： Eiji Takano ,  Hideo Numata ,  Kazumasa Tanida

发明人： Eiji Takano ,  Hideo Numata ,  Kazumasa Tanida

IPC分类号： H01L23/00 ,  H01L31/0232

CPC分类号： H01L27/14618 ,  H01L21/78 ,  H01L27/14683 ,  H01L2224/13

摘要： In one embodiment, a method for manufacturing a semiconductor device includes following steps. An aperture is formed in an interlayer insulating film formed on a semiconductor wafer apart from an integrated circuit portion by etching process. The interlayer insulating film has a dielectric constant smaller than a silicon oxide film (SiO2), and the width of the aperture is larger than a dicing region. A resin layer is embedded in the aperture. An adhesive layer is formed on the interlayer insulating film and the resin layer. The semiconductor wafer is attached to a glass substrate using the adhesive layer by Face Down method. The semiconductor wafer, the resin layer, and the adhesive layer on a dicing region are cut by blade dicing. The semiconductor wafer and the glass substrate adhered to the semiconductor wafer are cut into pieces by the blade dicing of the glass substrate under the dicing region.

摘要翻译： 在一个实施例中，制造半导体器件的方法包括以下步骤。 在通过蚀刻工艺与集成电路部分隔开的半导体晶片上形成的层间绝缘膜中形成开口。 层间绝缘膜的介电常数小于氧化硅膜（SiO 2），并且孔径的宽度大于切割区域。 树脂层嵌入孔中。 在层间绝缘膜和树脂层上形成粘接层。 半导体晶片通过Face Down方法使用粘合剂层附着到玻璃基板上。 通过刀片切割切割切割区域上的半导体晶片，树脂层和粘合剂层。 通过在切割区域下方的玻璃基板的切片将切割半导体晶片和粘附到半导体晶片的玻璃基板切割成片。

公开(公告)号：US20110073974A1

公开(公告)日：2011-03-31

申请号：US12880838

申请日：2010-09-13

申请人： Eiji Takano ,  Hideo Numata ,  Kazumasa Tanida

发明人： Eiji Takano ,  Hideo Numata ,  Kazumasa Tanida

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14618 ,  H01L21/78 ,  H01L27/14683 ,  H01L2224/13

摘要： In one embodiment, a method for manufacturing a semiconductor device includes following steps. An aperture is formed in an interlayer insulating film formed on a semiconductor wafer apart from an integrated circuit portion by etching process. The interlayer insulating film has a dielectric constant smaller than a silicon oxide film (SiO2), and the width of the aperture is larger than a dicing region. A resin layer is embedded in the aperture. An adhesive layer is formed on the interlayer insulating film and the resin layer. The semiconductor wafer is attached to a glass substrate using the adhesive layer by Face Down method. The semiconductor wafer, the resin layer, and the adhesive layer on a dicing region are cut by blade dicing. The semiconductor wafer and the glass substrate adhered to the semiconductor wafer are cut into pieces by the blade dicing of the glass substrate under the dicing region.

摘要翻译： 在一个实施例中，制造半导体器件的方法包括以下步骤。 在通过蚀刻工艺与集成电路部分隔开的半导体晶片上形成的层间绝缘膜中形成开口。 层间绝缘膜的介电常数小于氧化硅膜（SiO 2），并且孔径的宽度大于切割区域。 树脂层嵌入孔中。 在层间绝缘膜和树脂层上形成粘接层。 半导体晶片通过Face Down方法使用粘合剂层附着到玻璃基板上。 通过刀片切割切割切割区域上的半导体晶片，树脂层和粘合剂层。 通过在切割区域下方的玻璃基板的切片将切割半导体晶片和粘附到半导体晶片的玻璃基板切割成片。

公开(公告)号：US20090194865A1

公开(公告)日：2009-08-06

申请号：US12236567

申请日：2008-09-24

申请人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

发明人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

IPC分类号： H01L23/48 ,  H01L21/78 ,  H01L21/66

CPC分类号： H01L27/14687 ,  H01L21/561 ,  H01L21/568 ,  H01L23/481 ,  H01L23/544 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2223/54493 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

摘要翻译： 一种制造半导体器件的方法，包括：制备具有第一凹槽的半导体衬底; 制备具有第二凹口的支撑衬底; 将半导体衬底与支撑衬底层压，使得第一凹口可以与第二凹口匹配; 以及处理半导体衬底的与面向支撑衬底的第一主表面相对的第二主表面，以将半导体衬底的厚度减小到预定厚度。

公开(公告)号：US5271359A

公开(公告)日：1993-12-21

申请号：US789278

申请日：1991-11-08

申请人： Takafumi Teramoto ,  Eiji Takano ,  Hiroyasu Uchida ,  Kenji Morimoto ,  Tsutomu Fukuma

发明人： Takafumi Teramoto ,  Eiji Takano ,  Hiroyasu Uchida ,  Kenji Morimoto ,  Tsutomu Fukuma

IPC分类号： F02B1/04 ,  F02B43/00 ,  F02B53/00 ,  F02B75/02 ,  F02B43/10 ,  F02B53/06

CPC分类号： F02B43/00 ,  F02B1/04 ,  F02B2053/005 ,  F02B2075/027 ,  F02B53/00 ,  Y02T10/32 ,  Y10S123/12

摘要： A gaseous fuel rotary piston engine has a rotor housing and a rotor. A side housing of the rotor housing is provided with an air intake port for supplying air to working chambers defined in the rotor housing and a gaseous fuel port which is connected to a gaseous fuel source through a fuel supply passage and through which gaseous fuel is supplied to the working chambers. The air intake port is formed to open near the top dead center on the intake stroke and close after the bottom dead center on the intake stroke. The gaseous fuel port is formed to open near the opening time of the air intake port and close substantially at the middle of the compression stroke.

摘要翻译： 气体燃料旋转活塞发动机具有转子壳体和转子。 转子壳体的侧壳体设置有用于向限定在转子壳体中的工作室供应空气的进气口和通过燃料供应通道连接到气体燃料源并通过其供应气态燃料的气体燃料端口 到工作室。 进气口形成为在进气冲程上方的上止点附近打开，在进气冲程后的下止点后关闭。 气体燃料口形成为在进气口的打开时间附近打开并且基本上在压缩行程的中间闭合。

公开(公告)号：US08338918B2

公开(公告)日：2012-12-25

申请号：US13164099

申请日：2011-06-20

申请人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

发明人： Masahiro Sekiguchi ,  Eiji Takano ,  Tatsuhiko Shirakawa ,  Kenichiro Hagiwara ,  Masayuki Dohi ,  Susumu Harada

IPC分类号： H01L23/48 ,  H01L21/66

CPC分类号： H01L27/14687 ,  H01L21/561 ,  H01L21/568 ,  H01L23/481 ,  H01L23/544 ,  H01L27/14618 ,  H01L31/0203 ,  H01L2223/54493 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/13 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/16195 ,  H01L2924/16235 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for manufacturing a semiconductor device, includes: preparing a semiconductor substrate with a first notch; preparing a supporting substrate with a second notch; laminating the semiconductor substrate with the supporting substrate so that the first notch can be matched with the second notch; and processing a second main surface of the semiconductor substrate opposite to a first main surface thereof facing to the supporting substrate to reduce a thickness of the semiconductor substrate to a predetermined thickness.

摘要翻译： 一种制造半导体器件的方法，包括：制备具有第一凹槽的半导体衬底; 制备具有第二凹口的支撑衬底; 将半导体衬底与支撑衬底层压，使得第一凹口可以与第二凹口匹配; 以及处理半导体衬底的与面向支撑衬底的第一主表面相对的第二主表面，以将半导体衬底的厚度减小到预定厚度。

公开(公告)号：US06376907B1

公开(公告)日：2002-04-23

申请号：US09201866

申请日：1998-11-30

申请人： Eiji Takano ,  Eiichi Hosomi ,  Chiaki Takubo

发明人： Eiji Takano ,  Eiichi Hosomi ,  Chiaki Takubo

IPC分类号： H01L2312

CPC分类号： H01L23/04 ,  H01L23/10 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2224/0401

摘要： A semiconductor device with a BGA package includes a substrate made of a resin and having one side on which a number of solder ball terminals are formed and the other side on which a chip mounting portion electrically connected to the solder ball terminals is formed, and a cover plate made of a metal and attached to a semiconductor chip so as to cover and come into contact with it under a condition where the semiconductor chip is connected to the resin substrate by a flip-chip process. The cover plate includes a base brought into contact with the semiconductor chip and a peripheral portion formed with a plurality of bonding portions where the cover plate is bonded to the substrate. The bonding portions are discontinuous to each other.

摘要翻译： 具有BGA封装的半导体器件包括由树脂制成的衬底，其一侧形成有多个焊球端子，另一侧形成有与焊球端子电连接的芯片安装部， 由金属构成的盖板，并且在半导体芯片通过倒装芯片工艺连接到树脂基板的状态下被覆盖并与其接触。 盖板包括与半导体芯片接触的基座和形成有多个接合部分的边缘部分，其中盖板结合到基板。 接合部彼此不连续。