公开(公告)号：US20130277828A1

公开(公告)日：2013-10-24

申请号：US13450191

申请日：2012-04-18

申请人： Chang-Chia Huang ,  Tsung-Shu Lin ,  Han-Ping Pu ,  Yen-Liang Lin ,  Sheng-Hsiang Chiu

发明人： Chang-Chia Huang ,  Tsung-Shu Lin ,  Han-Ping Pu ,  Yen-Liang Lin ,  Sheng-Hsiang Chiu

IPC分类号： H01L23/498 ,  H01L21/50

CPC分类号： H01L24/16 ,  H01L23/49816 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/16237 ,  H01L2224/16238 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81024 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2924/15311 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/0665

摘要： Methods and apparatus for a solder mask trench used in a bump-on-trace (BOT) structure to form a semiconductor package are disclosed. A solder mask layer is formed on a trace and on a substrate. An opening of the solder mask layer, called a solder mask trench, is formed to expose the trace on the substrate. The solder mask trench has a width about a size of a diameter of a solder bump. A solder bump is landed directly on the exposed trace to connect a chip to the trace by an interconnect. With the formation of the solder mask trench, the trace exposed in the solder mask trench have a better grab force, which reduces the trace peeling failure for the semiconductor package. A plurality of solder mask trench rings may be formed in a package.

摘要翻译： 公开了用于形成半导体封装的凸起跟踪（BOT）结构中的焊接掩模沟槽的方法和装置。 在迹线和基板上形成焊料掩模层。 形成焊料掩模层的开口，称为焊料掩模沟槽，以露出衬底上的迹线。 焊接掩模沟槽的宽度大约为焊料凸块的直径。 焊料凸块直接落在裸露的轨迹上，通过互连将芯片连接到轨迹。 通过焊接掩模沟槽的形成，在焊接掩模沟槽中暴露的迹线具有更好的抓取力，这减少了半导体封装的迹线剥离故障。 可以在封装中形成多个焊接掩模沟槽环。

公开(公告)号：US20130168855A1

公开(公告)日：2013-07-04

申请号：US13342751

申请日：2012-01-03

申请人： Yu-Feng Chen ,  Han-Ping Pu

发明人： Yu-Feng Chen ,  Han-Ping Pu

IPC分类号： H01L23/498 ,  H01L21/50 ,  H01L23/48

CPC分类号： H01L23/02 ,  H01L25/105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00

摘要： Methods and apparatus for package on package structures. A structure includes a first integrated circuit package including at least one integrated circuit device mounted on a first substrate, a plurality of package on package connectors extending from a bottom surface and arranged in a pattern of one or more rows proximal to an outer periphery of the first substrate; and a second integrated circuit package including at least another integrated circuit device mounted on a second substrate and a plurality of lands on an upper surface coupled to the plurality of package on package connectors, and a plurality of external connectors extending from a bottom surface of the second substrate; wherein the pattern of the external connectors is staggered from the pattern of the package on package connectors so that the package on package connectors are not in vertical alignment with the external connectors. Methods for forming structures are disclosed.

摘要翻译： 封装结构封装的方法和装置。 一种结构包括第一集成电路封装，其包括安装在第一基板上的至少一个集成电路器件，从封装连接器上的多个封装，其从底表面延伸并且以一个或多个行的图案布置， 第一底物; 以及第二集成电路封装，其包括安装在第二基板上的至少另一个集成电路器件和耦合到封装连接器上的多个封装的上表面上的多个焊盘，以及从所述第二基板的底表面延伸的多个外部连接器 第二基板; 其中外部连接器的图案与包装连接器上的包装图案交错，使得包装连接器上的包装件不与外部连接器垂直对准。 公开了形成结构的方法。

公开(公告)号：US08420452B2

公开(公告)日：2013-04-16

申请号：US13214076

申请日：2011-08-19

申请人： Han-Ping Pu ,  Chien-Ping Huang

发明人： Han-Ping Pu ,  Chien-Ping Huang

IPC分类号： H01L21/4825

CPC分类号： H01L24/13 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/4951 ,  H01L23/49548 ,  H01L24/14 ,  H01L24/17 ,  H01L2224/0401 ,  H01L2224/0603 ,  H01L2224/13099 ,  H01L2224/14 ,  H01L2224/1403 ,  H01L2224/141 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014

摘要： A leadframe-based semiconductor package and a fabrication method thereof are provided. The leadframe-based semiconductor package includes a chip implanted with a plurality of first and second conductive bumps thereon, and a leadframe having a plurality of leads. The first conductive bumps are bonded to the leads to electrically connect the chip to the leadframe. The chip, the first and second conductive bumps, and the leadframe are encapsulated by an encapsulant, with bottom ends of the second conductive bumps and bottom surfaces of the leads being exposed from the encapsulant. This allows the second conductive bumps to provide additional input/output electrical connections for the chip besides the leads.

摘要翻译： 提供了一种引线框半导体封装及其制造方法。 基于引线框的半导体封装包括在其上注入多个第一和第二导电凸块的芯片以及具有多个引线的引线框架。 第一导电凸块被接合到引线以将芯片电连接到引线框架。 芯片，第一和第二导电凸块和引线框架由密封剂封装，第二导电凸块的底端和引线的底表面从密封剂暴露出来。 这允许第二导电凸块除了引线之外为芯片提供额外的输入/输出电连接。

公开(公告)号：US20120319270A1

公开(公告)日：2012-12-20

申请号：US13162394

申请日：2011-06-16

申请人： Yu-Feng Chen ,  Yu-Ling Tsai ,  Han-Ping Pu ,  Hung-Jui Kuo ,  Yu Yi Huang

发明人： Yu-Feng Chen ,  Yu-Ling Tsai ,  Han-Ping Pu ,  Hung-Jui Kuo ,  Yu Yi Huang

IPC分类号： H01L23/48

CPC分类号： H01L23/562 ,  H01L23/293 ,  H01L23/3114 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2224/05552

摘要： A structure includes a metal pad over a semiconductor substrate, a passivation layer having a portion over the metal pad, and a first polyimide layer over the passivation layer, wherein the first polyimide layer has a first thickness and a first Young's modulus. A post-passivation interconnect (PPI) includes a first portion over the first polyimide layer, and a second portion extending into the passivation layer and the first polyimide layer. The PPI is electrically coupled to the metal pad. A second polyimide layer is over the PPI. The second polyimide layer has a second thickness and a second Young's modulus. At least one of a thickness ratio and a Young's modulus ratio is greater than 1.0, wherein the thickness ratio is the ratio of the first thickness to the second thickness, and the Young's modulus ratio is the ratio of the second Young's modulus to the first Young's modulus.

摘要翻译： 一种结构包括半导体衬底上的金属焊盘，具有金属焊盘上方的一部分的钝化层以及钝化层上的第一聚酰亚胺层，其中第一聚酰亚胺层具有第一厚度和第一杨氏模量。 后钝化互连（PPI）包括在第一聚酰亚胺层之上的第一部分，以及延伸到钝化层和第一聚酰亚胺层中的第二部分。 PPI电耦合到金属垫。 第二个聚酰亚胺层位于PPI之上。 第二聚酰亚胺层具有第二厚度和第二杨氏模量。 厚度比和杨氏模量比中的至少一个大于1.0，其中厚度比是第一厚度与第二厚度的比率，杨氏模量比是第二杨氏模量与第一杨氏模量之比 模数。

公开(公告)号：US08183092B2

公开(公告)日：2012-05-22

申请号：US12829704

申请日：2010-07-02

申请人： Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

发明人： Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/00 ,  H01L21/46

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L21/565 ,  H01L23/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A stacked semiconductor structure and fabrication method thereof are provided. The method includes mounting and connecting electrically a semiconductor chip to a first substrate, mounting on the first substrate a plurality of supporting members corresponding in position to a periphery of the semiconductor chip, mounting a second substrate having a first surface partially covered with a tape and a second surface opposite to the first surface on the supporting members via the second surface, connecting electrically the first and second substrates by bonding wires, forming on the first substrate an encapsulant for encapsulating the semiconductor chip, the supporting members, the second substrate, the bonding wires, and the tape with an exposed top surface, and removing the tape to expose the first surface of the second substrate and allow an electronic component to be mounted thereon. The present invention prevents reflow-induced contamination, spares a special mold, and eliminates flash.

摘要翻译： 提供了堆叠半导体结构及其制造方法。 该方法包括将半导体芯片电连接到第一基板上，在第一基板上安装多个对应于半导体芯片的周边的支撑部件，安装第二基板，该第二基板具有部分被带覆盖的第一表面， 经由第二表面与支撑构件上的第一表面相对的第二表面，通过接合线电连接第一和第二基板，在第一基板上形成用于封装半导体芯片的密封剂，支撑构件，第二基板， 接合线和具有暴露的顶表面的带，并且移除带以露出第二基板的第一表面并允许电子部件安装在其上。 本发明防止回流引起的污染，备有特殊的模具，并消除闪光。

公开(公告)号：US20100278211A1

公开(公告)日：2010-11-04

申请号：US12431927

申请日：2009-04-29

申请人： Han-Ping Pu ,  Mill-Jer Wang

发明人： Han-Ping Pu ,  Mill-Jer Wang

IPC分类号： G01N3/60 ,  H01L23/58

CPC分类号： H01L23/345 ,  G01R31/2856 ,  G01R31/2875 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a semiconductor device, the device includes a substrate, a front-end structure formed in the substrate, a back-end structure formed on the front-end structure, a heater embedded in the back-end structure and operable to generate heat, and a sensor embedded in the back-end structure and operable to sense a temperature of the semiconductor device.

摘要翻译： 本公开提供一种半导体器件，该器件包括衬底，形成在衬底中的前端结构，形成在前端结构上的后端结构，嵌入在后端结构中的加热器，可操作以产生 热和嵌入在后端结构中的传感器，并且可操作以感测半导体器件的温度。

公开(公告)号：US07820543B2

公开(公告)日：2010-10-26

申请号：US11807522

申请日：2007-05-29

申请人： Kuo-Chin Chang ,  Han-Ping Pu ,  Pei-Haw Tsao

发明人： Kuo-Chin Chang ,  Han-Ping Pu ,  Pei-Haw Tsao

IPC分类号： H01L21/44 ,  H01L23/48

CPC分类号： H01L24/11 ,  H01L24/81 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/116 ,  H01L2224/11902 ,  H01L2224/13019 ,  H01L2224/13076 ,  H01L2224/13078 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/81801 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00

摘要： An enhanced wafer level chip scale packaging (WLCSP) copper electrode post is described having one or more pins that protrude from the top of the electrode post. When the solder ball is soldered onto the post, the pins are encapsulated within the solder material. The pins not only add shear strength to the soldered joint between the solder ball and the electrode post but also create a more reliable electrical connection due to the increased surface area between the electrode post/pin combination and the solder ball. Moreover, creating an irregularly shaped solder joint retards the propagation of cracks that may form in the intermetal compounds (IMC) layer formed at the solder joint.

摘要翻译： 描述了增强的晶片级芯片级封装（WLCSP）铜电极柱，其具有从电极柱的顶部突出的一个或多个引脚。 当焊球焊接到柱上时，引脚被封装在焊料材料内。 引脚不仅在焊球和电极柱之间的焊接接头上增加剪切强度，而且由于电极柱/销组合和焊球之间的表面积增加，也产生更可靠的电连接。 此外，产生不规则形状的焊点阻碍了可能在焊接接头形成的金属间化合物（IMC）层中形成的裂纹的传播。

公开(公告)号：US20100267202A1

公开(公告)日：2010-10-21

申请号：US12829704

申请日：2010-07-02

申请人： Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

发明人： Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/50

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L21/565 ,  H01L23/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A stacked semiconductor structure and fabrication method thereof are provided. The method includes mounting and connecting electrically a semiconductor chip to a first substrate, mounting on the first substrate a plurality of supporting members corresponding in position to a periphery of the semiconductor chip, mounting a second substrate having a first surface partially covered with a tape and a second surface opposite to the first surface on the supporting members via the second surface, connecting electrically the first and second substrates by bonding wires, forming on the first substrate an encapsulant for encapsulating the semiconductor chip, the supporting members, the second substrate, the bonding wires, and the tape with an exposed top surface, and removing the tape to expose the first surface of the second substrate and allow an electronic component to be mounted thereon. The present invention prevents reflow-induced contamination, spares a special mold, and eliminates flash.

摘要翻译： 提供了堆叠半导体结构及其制造方法。 该方法包括将半导体芯片电连接到第一基板上，在第一基板上安装多个对应于半导体芯片的周边的支撑部件，安装第二基板，该第二基板具有部分被带覆盖的第一表面， 经由第二表面与支撑构件上的第一表面相对的第二表面，通过接合线电连接第一和第二基板，在第一基板上形成用于封装半导体芯片的密封剂，支撑构件，第二基板， 接合线和具有暴露的顶表面的带，并且移除带以露出第二基板的第一表面并允许电子部件安装在其上。 本发明防止回流引起的污染，备有特殊的模具，并消除闪光。

公开(公告)号：US20100233855A1

公开(公告)日：2010-09-16

申请号：US12788772

申请日：2010-05-27

申请人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

发明人： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC分类号： H01L21/56

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/351 ,  H01L2224/82 ,  H01L2924/00

摘要： A chip scale package structure and a method for fabricating the same are disclosed. The method includes forming metal pads on a predetermined part of a carrier; mounting chips on the carrier, each of the chips having a plurality of conductive bumps soldered to the metal pads; forming an encapsulant on the carrier to encapsulate the chips and the conductive bumps; removing the carrier to expose the metal pads and even the metal pads with a surface of the encapsulant; forming on the encapsulant a plurality of first conductive traces electrically connected to the metal pads; applying a solder mask on the first conductive traces, and forming a plurality of openings on the solder mask to expose a predetermined part of the first conductive traces; forming a plurality of conductive elements on the predetermined part; and cutting the encapsulant to form a plurality of chip scale package structures.

摘要翻译： 公开了一种芯片级封装结构及其制造方法。 该方法包括在载体的预定部分上形成金属垫; 在载体上安装芯片，每个芯片具有焊接到金属焊盘的多个导电凸块; 在载体上形成密封剂以封装芯片和导电凸块; 移除载体以暴露金属垫和甚至具有密封剂表面的金属垫; 在所述密封剂上形成电连接到所述金属焊盘的多个第一导电迹线; 在所述第一导电迹线上施加焊接掩模，以及在所述焊接掩模上形成多个开口以暴露所述第一导电迹线的预定部分; 在所述预定部分上形成多个导电元件; 以及切割所述密封剂以形成多个芯片级封装结构。

公开(公告)号：US07772685B2

公开(公告)日：2010-08-10

申请号：US11591974

申请日：2006-11-01

申请人： Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

发明人： Chien-Ping Huang ,  Chih-Ming Huang ,  Han-Ping Pu ,  Yu-Po Wang ,  Cheng-Hsu Hsiao

IPC分类号： H01L23/02

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L21/565 ,  H01L23/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06572 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/15174 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A stacked semiconductor structure and fabrication method thereof are provided. The method includes mounting and connecting electrically a semiconductor chip to a first substrate, mounting on the first substrate a plurality of supporting members corresponding in position to a periphery of the semiconductor chip, mounting a second substrate having a first surface partially covered with a tape and a second surface opposite to the first surface on the supporting members via the second surface, connecting electrically the first and second substrates by bonding wires, forming on the first substrate an encapsulant for encapsulating the semiconductor chip, the supporting members, the second substrate, the bonding wires, and the tape with an exposed top surface, and removing the tape to expose the first surface of the second substrate and allow an electronic component to be mounted thereon. The present invention prevents reflow-induced contamination, spares a special mold, and eliminates flash.

摘要翻译： 提供了堆叠半导体结构及其制造方法。 该方法包括将半导体芯片电连接到第一基板上，在第一基板上安装多个对应于半导体芯片的周边的支撑部件，安装第二基板，该第二基板具有部分被带覆盖的第一表面， 经由第二表面与支撑构件上的第一表面相对的第二表面，通过接合线电连接第一和第二基板，在第一基板上形成用于封装半导体芯片的密封剂，支撑构件，第二基板， 接合线和具有暴露的顶表面的带，并且移除带以露出第二基板的第一表面并允许电子部件安装在其上。 本发明防止回流引起的污染，备有特殊的模具，并消除闪光。