公开(公告)号：US09117860B2

公开(公告)日：2015-08-25

申请号：US11639752

申请日：2006-12-15

申请人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  Benjamin W. Mooring ,  John Parks ,  William Thie ,  Fritz C. Redeker ,  Arthur M. Howald ,  Alan Schoepp ,  David Hemker ,  Carl Woods ,  Hyungsuk Alexander Yoon ,  Aleksander Owczarz

发明人： John Boyd ,  Yezdi Dordi ,  Tiruchirapalli Arunagiri ,  Benjamin W. Mooring ,  John Parks ,  William Thie ,  Fritz C. Redeker ,  Arthur M. Howald ,  Alan Schoepp ,  David Hemker ,  Carl Woods ,  Hyungsuk Alexander Yoon ,  Aleksander Owczarz

IPC分类号： H05H1/24 ,  C23C16/00 ,  H01L21/67 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/67225 ,  H01L21/288 ,  H01L21/6704 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6723 ,  H01L21/76849

摘要： A cluster architecture and methods for processing a substrate are disclosed. The cluster architecture includes a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules. The lab-ambient controlled transfer module and the one or more wet substrate processing modules are configured to manage a first ambient environment. A vacuum transfer module that is coupled to the lab-ambient controlled transfer module and one or more plasma processing modules is also provided. The vacuum transfer module and the one or more plasma processing modules are configured to manage a second ambient environment. And, a controlled ambient transfer module that is coupled to the vacuum transfer module and one or more ambient processing modules is also included. The controlled ambient transfer module and the one or more ambient processing modules are configured to manage a third ambient environment. The cluster architecture therefore enables controlled processing of the substrate in either the first, second or third ambient environments, as well as during associated transitions.

摘要翻译： 公开了用于处理衬底的簇结构和方法。 集群架构包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。 实验室环境控制传递模块和一个或多个湿式衬底处理模块被配置为管理第一环境环境。 还提供耦合到实验室环境受控传输模块和一个或多个等离子体处理模块的真空传输模块。 真空转移模块和一个或多个等离子体处理模块被配置成管理第二周边环境。 并且，还包括耦合到真空传输模块和一个或多个环境处理模块的受控环境转移模块。 受控环境传输模块和一个或多个环境处理模块被配置为管理第三环境环境。 因此，集群架构使得能够在第一，第二或第三环境环境中以及在相关联的转换期间对衬底进行受控处理。

公开(公告)号：US08883027B2

公开(公告)日：2014-11-11

申请号：US12683995

申请日：2010-01-07

申请人： Hyungsuk Alexander Yoon ,  William Thie ,  Yezdi Dordi ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  William Thie ,  Yezdi Dordi ,  Andrew D. Bailey, III

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/02 ,  H05H1/24 ,  H01L21/67 ,  H01L21/311 ,  C23C16/00

CPC分类号： H01L21/31116 ,  H01L21/02063 ,  H01L21/67069 ,  H05H1/24 ,  H05H1/2406 ,  H05H1/48 ,  H05H2001/2418

摘要： A method for generating plasma for removing metal oxide from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the metal oxide. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an rf field to the cavity using the powered electrode to generate the plasma from the inert and the process gas.

摘要翻译： 提供了一种用于从衬底去除金属氧化物的等离子体的方法。 该方法包括提供一种动力电极组件，其包括供电电极，电介质层和布置在电源电极和电介质层之间的金属丝网。 该方法还包括提供与动力电极组件相对设置的接地电极组件，以形成其中产生等离子体的空腔。 当等离子体存在于空腔中时，金属丝网通过电介质层被屏蔽，等离子体在一端具有出口，用于提供等离子体以去除金属氧化物。 该方法还包括将至少一种惰性气体和至少一种工艺气体引入空腔中。 该方法还包括使用动力电极将空穴场施加到空腔，以从惰性气体和处理气体产生等离子体。

公开(公告)号：US08323460B2

公开(公告)日：2012-12-04

申请号：US11820810

申请日：2007-06-20

申请人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

发明人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

IPC分类号： C25D17/00

CPC分类号： C25D3/00 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/67005 ,  H01L21/67023 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/768 ,  H01L21/7684 ,  H01L21/76883 ,  H01L21/76898

摘要： Presented are methods and systems for fabricating three-dimensional integrated circuits having large diameter through-hole vias. One embodiment of the present invention provides a method of processing a wafer having holes for through-hole vias. The method comprises plating a gapfill metal on the wafer. The method also comprises chemically or electrochemically deplating a portion of the overburden metal. The method further comprises using chemical mechanical planarization to planarize the gapfill metal and to remove the remaining overburden metal. Another embodiment of the present invention is an integrated system comprising a process chamber for containing the wafer, a plating component integrated with the process chamber, and a deplating component integrated with the process chamber. The plating component is configured to electrochemically plate a gapfill metal onto the wafer to a least partially fill the holes. The deplating component is configured to chemically or to electrochemically remove a portion of the overburden metal formed by the plating component.

摘要翻译： 提出了用于制造具有大直径通孔的三维集成电路的方法和系统。 本发明的一个实施例提供一种处理具有用于通孔过孔的孔的晶片的方法。 该方法包括在晶片上镀覆间隙填充金属。 该方法还包括化学地或电化学地去除一部分覆盖层金属。 该方法还包括使用化学机械平面化来平坦化间隙填充金属并除去剩余的覆盖层金属。 本发明的另一实施例是一种集成系统，其包括用于容纳晶片的处理室，与处理室一体化的电镀部件，以及与处理室一体化的去掉部件。 电镀部件被配置为将间隙填充金属电化学地平板化到晶片上以至少部分地填充孔。 脱镀部件被配置为化学地或电化学地去除由电镀部件形成的覆盖层金属的一部分。

公开(公告)号：US08187968B2

公开(公告)日：2012-05-29

申请号：US12613518

申请日：2009-11-05

申请人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

发明人： John Boyd ,  Fritz Redeker ,  Yezdi Dordi ,  Hyungsuk Alexander Yoon ,  Shijian Li

IPC分类号： H01L21/00

CPC分类号： H01L23/48 ,  H01L21/4763 ,  H01L21/76898 ,  H01L2924/14

摘要： Presented are methods of fabricating three-dimensional integrated circuits that include post-contact back end of line through-hole via integration for the three-dimensional integrated circuits. Another aspect of the present invention includes three-dimensional integrated circuits fabricated according to methods of the present invention.

摘要翻译： 提出了制造三维集成电路的方法，其包括用于三维集成电路的集成的线路通孔的后接触后端。 本发明的另一方面包括根据本发明的方法制造的三维集成电路。

公开(公告)号：US20100181025A1

公开(公告)日：2010-07-22

申请号：US12750612

申请日：2010-03-30

申请人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

IPC分类号： C23F1/08

CPC分类号： H01L21/02087 ,  B08B7/0035

摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.

摘要翻译： 提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。 所述装置包括电源电极组件，其包括供电电极，第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。 该装置还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔。 当空腔中存在等离子体时，第一电介质层通过第一电介质层屏蔽第一丝网，其在一端具有出口以提供等离子体以除去氟化聚合物。

公开(公告)号：US20090304914A1

公开(公告)日：2009-12-10

申请号：US11639012

申请日：2006-12-13

申请人： Praveen Nalla ,  William Thie ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  Yezdi Dordi

发明人： Praveen Nalla ,  William Thie ,  John Boyd ,  Tiruchirapalli Arunagiri ,  Hyungsuk Alexander Yoon ,  Fritz C. Redeker ,  Yezdi Dordi

IPC分类号： B05D3/10

CPC分类号： C23C16/45525 ,  C23C16/18 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861

摘要： The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic barrier layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic barrier layer.

摘要翻译： 这些实施例满足了能够沉积薄且保形的阻挡层和铜互连中的铜层的需要，具有良好的电迁移性能并且具有降低的铜互连的应力诱发空穴的风险。 电迁移和应力引起的空隙受到阻挡层和铜层之间的粘附的影响。 在阻挡层上沉积功能化层，以使铜层沉积在铜互连中。 官能化层与阻挡层和铜形成强结合，以改善两层之间的粘附性。 提供了制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以辅助铜层沉积在铜互连中以便提高铜互连的电迁移性能的示例性方法。 该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，以及氧化金属阻挡层的表面。 该方法还包括将功能化层沉积在金属阻挡层的氧化表面上，并且在功能层沉积在金属阻挡层上之后，将铜层沉积在铜互连结构中。

公开(公告)号：US20090113656A1

公开(公告)日：2009-05-07

申请号：US11429574

申请日：2006-05-05

申请人： Hyungsuk Alexander Yoon ,  Andrew D. Bailey, III ,  Jason A. Ryder ,  Mark H. Wilcoxson ,  Jeffrey G. Gasparitsch ,  Randy Johnson ,  Stephan P. Hoffmann

发明人： Hyungsuk Alexander Yoon ,  Andrew D. Bailey, III ,  Jason A. Ryder ,  Mark H. Wilcoxson ,  Jeffrey G. Gasparitsch ,  Randy Johnson ,  Stephan P. Hoffmann

IPC分类号： A47L5/38 ,  A47L5/00 ,  B08B1/04 ,  B08B1/00

CPC分类号： H01L21/67046 ,  Y10S134/902

摘要： An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.

摘要翻译： 用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。 刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。 研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。 刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物 底物。

公开(公告)号：US09359673B2

公开(公告)日：2016-06-07

申请号：US13489235

申请日：2012-06-05

申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

IPC分类号： C23C16/455 ,  C23C16/54 ,  H01L21/67 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C16/45551 ,  C23C16/45517 ,  C23C16/54 ,  H01L21/28562 ,  H01L21/76843

摘要： A proximity heads for dispensing reactants and purging gas to deposit a thin film by Atomic Layer Deposition (ALD) includes a plurality of sides. Extending over a portion of the substrate region and being spaced apart from the portion of the substrate region when present, the proximity head is rotatable so as to place each side in a direction of the substrate region, and is disposed in a vacuum chamber coupled to a carrier gas source to sustain a pressure for the proximity head during operation. Each side of the proximity head includes a gas conduit through which the reactant gas and the purging gas are sequentially dispensed, and at least two separate vacuum conduits on each side of the gas conduit to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate.

摘要翻译： 用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头包括多个侧面。 当衬底区域的一部分延伸并与衬底区域的部分间隔开时，邻近头部是可旋转的，以便将每个侧面放置在衬底区域的方向上，并且设置在耦合到 载体气体源，用于在操作期间维持邻近头部的压力。 邻近头部的每一侧包括气体导管，反应气体和净化气体依次分配通过该气体导管，以及在气体导管的每一侧上的至少两个独立的真空管道，以将过量的反应气体，净化气体或沉积副产物从 面对衬底的接近头的表面与衬底之间的反应体积。

公开(公告)号：US08926789B2

公开(公告)日：2015-01-06

申请号：US12750612

申请日：2010-03-30

申请人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

发明人： Hyungsuk Alexander Yoon ,  John Boyd ,  Andras Kuthi ,  Andrew D. Bailey, III

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H01L21/02 ,  B08B7/00

CPC分类号： H01L21/02087 ,  B08B7/0035

摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.

摘要翻译： 提供一种从衬底生成用于除去氟化聚合物的等离子体的装置。 所述装置包括电源电极组件，其包括供电电极，第一电介质层和布置在所述电源电极和所述第一电介质层之间的第一电线网。 该装置还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔。 当空腔中存在等离子体时，第一电介质层通过第一电介质层屏蔽第一丝网，其在一端具有出口以提供等离子体以除去氟化聚合物。

公开(公告)号：US08287647B2

公开(公告)日：2012-10-16

申请号：US11736511

申请日：2007-04-17

申请人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

发明人： Hyungsuk Alexander Yoon ,  Mikhail Korolik ,  Fritz C. Redeker ,  John M. Boyd ,  Yezdi Dordi

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： C23C16/45551 ,  C23C16/45517 ,  C23C16/54 ,  H01L21/28562 ,  H01L21/76843

摘要： The embodiments provide apparatus and methods of depositing conformal thin film on interconnect structures by providing processes and systems using an atomic layer deposition (ALD). More specifically, each of the ALD systems includes a proximity head that has a small reaction volume right above an active process region of the substrate surface. The proximity head dispenses small amount of reactants and purging gas to be distributed and pumped away from the small reaction volume between the proximity head and the substrate in relatively short periods, which increases the through-put. In an exemplary embodiment, a proximity head for dispensing reactants and purging gas to deposit a thin film by atomic layer deposition (ALD) is provided. The proximity head is configured to sequentially dispensing a reactant gas and a purging gas to deposit a thin ALD film under the proximity head. The proximity head covers an active process region of a substrate surface. The proximity head also includes at least one vacuum channel to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate. The proximity head includes a plurality of sides, each side being configured to dispense either a reactant gas or a purging gas on the substrate surface underneath the proximity head. Each side has at least one vacuum channel.

摘要翻译： 实施例提供了通过提供使用原子层沉积（ALD）的工艺和系统在互连结构上沉积保形薄膜的装置和方法。 更具体地，每个ALD系统包括在基板表面的有效工艺区域正上方具有小的反应体积的邻近头部。 接近头部在较短的时间内分配少量的反应物和净化气体，以在相对较短的时间段内分配和泵送离开较小反应体积，这增加了通过量。 在一个示例性实施例中，提供了用于分配反应物和吹扫气体以通过原子层沉积（ALD）沉积薄膜的邻近头。 接近头被配置为顺序地分配反应气体和净化气体，以在邻近头部附近沉积薄的ALD膜。 接近头覆盖衬底表面的活性过程区域。 接近头还包括至少一个真空通道，以从邻近头部的面向衬底的表面和衬底之间的反应体积拉出过量的反应气体，吹扫气体或沉积副产物。 邻近头部包括多个侧面，每个侧面被构造成在邻近头部下方的基底表面上分配反应物气体或净化气体。 每侧至少有一个真空通道。