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1.发明授权Semiconductor device, its manufacturing method, and ratio communication device 有权半导体器件，其制造方法和比率通信装置公开(公告)号：US07119004B2
公开(公告)日：2006-10-10
申请号：US10486707
申请日：2002-05-28
IPC分类号： H01L21/44
CPC分类号： H01L25/0655 , H01L23/13 , H01L23/66 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2223/6644 , H01L2224/0401 , H01L2224/05553 , H01L2224/05554 , H01L2224/05639 , H01L2224/05647 , H01L2224/291 , H01L2224/29101 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48639 , H01L2224/48647 , H01L2224/49113 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/81143 , H01L2224/83192 , H01L2224/83801 , H01L2224/85 , H01L2224/85205 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/09701 , H01L2924/10161 , H01L2924/10329 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13064 , H01L2924/14 , H01L2924/15151 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15313 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/20752 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2224/78 , H01L2924/00 , H01L2924/01031 , H01L2924/01033 , H01L2924/00012
摘要： The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.
摘要翻译： 在多级放大器单元的最后级中的晶体管的输出端产生的寄生电感的变化减小。 包括末级晶体管的半导体芯片的一侧与形成在布线基板中的正方形凹部的内壁接触。 将半导体芯片精确地定位并固定在凹部的底部，由此使晶体管的漏极线固定。 然后，将漏电极设置在芯片顶部的芯片边缘与更靠近漏极焊盘的凹部的内壁接触。 金属化层与凹槽底部的芯片的尺寸相同，并且在金属化层上提供熔接材料。
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2.发明授权Semiconductor device, its manufacturing method, and radio communication device 有权半导体装置及其制造方法以及无线通信装置公开(公告)号：US07453147B2
公开(公告)日：2008-11-18
申请号：US11326341
申请日：2006-01-06
IPC分类号： H01L23/34
CPC分类号： H01L25/0655 , H01L23/13 , H01L23/66 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2223/6644 , H01L2224/0401 , H01L2224/05553 , H01L2224/05554 , H01L2224/05639 , H01L2224/05647 , H01L2224/291 , H01L2224/29101 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48639 , H01L2224/48647 , H01L2224/49113 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/81143 , H01L2224/83192 , H01L2224/83801 , H01L2224/85 , H01L2224/85205 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/09701 , H01L2924/10161 , H01L2924/10329 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13064 , H01L2924/14 , H01L2924/15151 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15313 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/20752 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2224/78 , H01L2924/00 , H01L2924/01031 , H01L2924/01033 , H01L2924/00012
摘要： The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.
摘要翻译： 在多级放大器单元的最后级中的晶体管的输出端产生的寄生电感的变化减小。 包括末级晶体管的半导体芯片的一侧与形成在布线基板中的正方形凹部的内壁接触。 将半导体芯片精确地定位并固定在凹部的底部，由此使晶体管的漏极线固定。 然后，将漏电极设置在芯片顶部的芯片边缘与更靠近漏极焊盘的凹部的内壁接触。 金属化层与凹槽底部的芯片的尺寸相同，并且在金属化层上提供熔接材料。
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3.发明申请Semiconductor device, its manufacturing method, and radio communication device 有权半导体装置及其制造方法以及无线通信装置公开(公告)号：US20060118970A1
公开(公告)日：2006-06-08
申请号：US11326341
申请日：2006-01-06
CPC分类号： H01L25/0655 , H01L23/13 , H01L23/66 , H01L24/06 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2223/6644 , H01L2224/0401 , H01L2224/05553 , H01L2224/05554 , H01L2224/05639 , H01L2224/05647 , H01L2224/291 , H01L2224/29101 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48639 , H01L2224/48647 , H01L2224/49113 , H01L2224/49171 , H01L2224/49175 , H01L2224/73265 , H01L2224/81143 , H01L2224/83192 , H01L2224/83801 , H01L2224/85 , H01L2224/85205 , H01L2224/92247 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01032 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/014 , H01L2924/09701 , H01L2924/10161 , H01L2924/10329 , H01L2924/12041 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13064 , H01L2924/14 , H01L2924/15151 , H01L2924/15153 , H01L2924/15165 , H01L2924/1517 , H01L2924/15313 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2924/20752 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2224/78 , H01L2924/00 , H01L2924/01031 , H01L2924/01033 , H01L2924/00012
摘要： The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.
摘要翻译： 在多级放大器单元的最后级中的晶体管的输出端产生的寄生电感的变化减小。 包括末级晶体管的半导体芯片的一侧与形成在布线基板中的正方形凹部的内壁接触。 将半导体芯片精确地定位并固定在凹部的底部，由此使晶体管的漏极线固定。 然后，将漏电极设置在芯片顶部的芯片边缘与更靠近漏极焊盘的凹部的内壁接触。 金属化层与凹槽底部的芯片的尺寸相同，并且在金属化层上提供熔接材料。
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公开(公告)号：US06709890B2
公开(公告)日：2004-03-23
申请号：US09783605
申请日：2001-02-15
IPC分类号： H01L2144
CPC分类号： H01L24/81 , B23K1/0016 , B23K2101/40 , H01L23/04 , H01L23/13 , H01L23/36 , H01L23/66 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/75 , H01L24/83 , H01L24/93 , H01L24/97 , H01L2224/16 , H01L2224/2919 , H01L2224/32225 , H01L2224/451 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2224/75 , H01L2224/753 , H01L2224/75305 , H01L2224/758 , H01L2224/7598 , H01L2224/81801 , H01L2224/83192 , H01L2224/83194 , H01L2224/83801 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01009 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/10329 , H01L2924/1306 , H01L2924/14 , H01L2924/15153 , H01L2924/15165 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H01L2924/19105 , H01L2924/351 , H05K1/181 , H05K3/341 , H01L2924/00 , H01L2924/01028 , H01L2924/01031 , H01L2924/3512 , H01L2924/00012 , H01L2224/92247 , H01L2224/05599
摘要： In a method of manufacturing a high frequency module to be assembled by providing, on a wiring board, a chip part and a semiconductor pellet to be bare chip mounted and then mounting the chip part and the semiconductor pellet through soldering, the wiring board is separated from a heat block with the semiconductor pellet pressurized against the wiring board in a main heating portion heating and melting a reflow solder, thereby cooling a soldering portion. Consequently, the generation of a void in the soldering portion can be prevented and the connecting reliability of the soldering portion can be enhanced. In addition, a degree of mounting horizontality of the semiconductor pellet on the wiring board can be enhanced.
摘要翻译： 在通过在布线基板上设置裸芯片安装的芯片部件和半导体芯片，然后通过焊接来安装芯片部件和半导体芯片来制造要组装的高频模块的方法中，布线板被分离 从加热和熔化回流焊料的主加热部分中的半导体芯片加热到布线板的散热块，从而冷却焊接部分。 因此，可以防止在焊接部分中产生空隙，并且可以提高焊接部分的连接可靠性。 此外，可以提高半导体芯片在布线板上的安装水平度。
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