公开(公告)号：US07223636B2

公开(公告)日：2007-05-29

申请号：US10961041

申请日：2004-10-12

申请人： Yoshihiko Kobayashi ,  Susumu Sato ,  Koki Tanimoto ,  Tomio Yamada ,  Hirokazu Nakajima ,  Tomoaki Kudaishi ,  Yoshinori Shiokawa ,  Toshiharu Niitsu ,  Tsutomu Ida

发明人： Yoshihiko Kobayashi ,  Susumu Sato ,  Koki Tanimoto ,  Tomio Yamada ,  Hirokazu Nakajima ,  Tomoaki Kudaishi ,  Yoshinori Shiokawa ,  Toshiharu Niitsu ,  Tsutomu Ida

IPC分类号： H01L21/44

CPC分类号： H05K3/0052 ,  H01L21/481 ,  H01L2224/48227 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/284 ,  H05K2201/09036 ,  H05K2201/0909 ,  H05K2203/302 ,  H01L2924/00012

摘要： In a dividing method according to the present invention, a wiring board formed of ceramic is forced up (upper swing) by a lower clamp claw of a clamper, and some of a protruded wiring board portion protruding from a conveying chute is pressed against a support body to perform a first division under bending stress. Thereafter, the upward-located clamper is rotatably swung (lower swing) downward to allow an upper clamp claw to press down the protruded wiring board portion, thereby performing a reverse division at the first division section again as a second division. Since the second division allows a tensile force to act on a remaining and thin non-divided resin portion, the non-divided resin portion is torn off. Thus, the perfect division is enabled. Fractionalizing is done by a one-row division and an individual division so that each semiconductor device is formed.

公开(公告)号：US07119004B2

公开(公告)日：2006-10-10

申请号：US10486707

申请日：2002-05-28

申请人： Tsutomu Ida ,  Yoshihiko Kobayashi ,  Masakazu Hashizume ,  Yoshinori Shiokawa ,  Sakae Kikuchi

发明人： Tsutomu Ida ,  Yoshihiko Kobayashi ,  Masakazu Hashizume ,  Yoshinori Shiokawa ,  Sakae Kikuchi

IPC分类号： H01L21/44

CPC分类号： H01L25/0655 ,  H01L23/13 ,  H01L23/66 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2223/6644 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48639 ,  H01L2224/48647 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/81143 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15313 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/00012

摘要： The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

摘要翻译： 在多级放大器单元的最后级中的晶体管的输出端产生的寄生电感的变化减小。 包括末级晶体管的半导体芯片的一侧与形成在布线基板中的正方形凹部的内壁接触。 将半导体芯片精确地定位并固定在凹部的底部，由此使晶体管的漏极线固定。 然后，将漏电极设置在芯片顶部的芯片边缘与更靠近漏极焊盘的凹部的内壁接触。 金属化层与凹槽底部的芯片的尺寸相同，并且在金属化层上提供熔接材料。

公开(公告)号：US20050064612A1

公开(公告)日：2005-03-24

申请号：US10983689

申请日：2004-11-09

申请人： Akio Ishizu ,  Kazutoshi Takashima ,  Shiro Oba ,  Yoshihiko Kobayashi ,  Tsutomu Ida ,  Shigeru Haga ,  Susumu Takada ,  Iwamichi Koujiro ,  Norinaga Arai ,  Yuji Kakegawa

发明人： Akio Ishizu ,  Kazutoshi Takashima ,  Shiro Oba ,  Yoshihiko Kobayashi ,  Tsutomu Ida ,  Shigeru Haga ,  Susumu Takada ,  Iwamichi Koujiro ,  Norinaga Arai ,  Yuji Kakegawa

IPC分类号： G01R31/26 ,  H01L21/50 ,  H01L21/58 ,  H01L21/66 ,  H01L21/98 ,  H01L23/04 ,  H01L23/10 ,  H01L23/13 ,  H01L23/498 ,  H01L23/50 ,  H01L23/544 ,  H01L25/16

CPC分类号： H01L22/20 ,  H01L21/50 ,  H01L23/04 ,  H01L23/10 ,  H01L23/13 ,  H01L23/49805 ,  H01L23/50 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/16 ,  H01L25/165 ,  H01L25/50 ,  H01L2223/54406 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/48247

摘要： A method of manufacturing a semiconductor device able to reduce the number of manufacturing steps and attain the rationalization of a manufacturing line is disclosed. The semiconductor device is a high-frequency module assembled by mounting chip parts (22) and semiconductor pellets (21) onto each of wiring substrates (2) formed on a matrix substrate (27) after inspection. A defect mark (2e) is affixed to a wiring substrate (2) as a block judged to be defective in the inspection of the matrix substrate (27), then in a series of subsequent assembling steps the defect mark (e) is recognized and the assembling work for the wiring substrate (2) with the defect mark (2e) thereon is omitted to attain the rationalization of a manufacturing line.

摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件能够减少制造步骤的数量并实现制造线的合理化。 半导体器件是通过在检查后将芯片部件（22）和半导体芯片（21）安装到形成在矩阵基板（27）上的每个布线基板（2）上而组装的高频模块。 作为在矩阵基板（27）的检查中被判定为有缺陷的块，在布线基板（2）上附着有缺陷标记（2e），然后在一系列后续的组装步骤中识别缺陷标记（e） 省略了具有缺陷标记（2e）的布线基板（2）的组装工作，以实现生产线的合理化。

公开(公告)号：US5656998A

公开(公告)日：1997-08-12

申请号：US428241

申请日：1995-04-26

申请人： Hiroyuki Fujiuchi ,  Masaaki Takeshita ,  Kenji Uchida ,  Tsutomu Ida ,  Hisakazu Okumura ,  Mitsuhiko Nakajima

发明人： Hiroyuki Fujiuchi ,  Masaaki Takeshita ,  Kenji Uchida ,  Tsutomu Ida ,  Hisakazu Okumura ,  Mitsuhiko Nakajima

IPC分类号： G08B13/14 ,  G08B13/02 ,  G08B13/181

CPC分类号： G08B13/1454 ,  G08B13/1463 ,  G08B13/1472 ,  Y10T70/5004

摘要： The present invention relates to a detector for theft prevention used in contact with a commodity or the like exhibited in a shop.Conventionally, an operated portion for contacting a commodity or the like is pivotable only in one direction from a projected position. The commodity or the like cannot be moved in directions requiring the operated portion to pivot in directions other than that direction. A forcible movement would damage the operated portion.In a detector for theft prevention of this invention, a switch (3) provided for a box (2) thereof has a pivotable operated portion (3a) biased to return to a position projecting from a surface (2c, 2d) contacting an object of theft prevention (E). The operated portion (3a) is pivotable in a plurality of directions including at least two opposite directions (e1, e2). The detector for theft prevention is properly operable for movements in varied directions of the object of theft prevention (E).

摘要翻译： PCT No.PCT / JP94 / 01405 Sec。 371日期1995年04月26日 102（e）日期1995年4月26日PCT 1994年8月25日PCT公布。 出版物WO95 / 06922 日期：1995年3月9日本发明涉及一种与店内展示的商品等接触的防盗用检测器。 通常，用于接触商品等的操作部分仅能够从突出位置在一个方向上枢转。 商品等不能沿着要求操作部分沿除该方向以外的方向枢转的方向移动。 强制运动会损坏操作部分。 在防止本发明的检测器中，为其盒（2）设置的开关（3）具有偏转的可枢转操作部分（3a），以便返回到从接触物体的表面（2c，2d）突出的位置 防盗（E）。 操作部分（3a）可以在包括至少两个相反方向（e1，e2）的多个方向上枢转。 用于防盗的检测器适用于在防盗物体（E）的各个方向上移动。

公开(公告)号：US20060118970A1

公开(公告)日：2006-06-08

申请号：US11326341

申请日：2006-01-06

申请人： Tsutomu Ida ,  Yoshihiko Kobayashi ,  Masakazu Hashizume ,  Yoshinori Shiokawa ,  Sakae Kikuchi

发明人： Tsutomu Ida ,  Yoshihiko Kobayashi ,  Masakazu Hashizume ,  Yoshinori Shiokawa ,  Sakae Kikuchi

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/34

CPC分类号： H01L25/0655 ,  H01L23/13 ,  H01L23/66 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2223/6644 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48639 ,  H01L2224/48647 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/81143 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15313 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/00012

摘要： The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

摘要翻译： 在多级放大器单元的最后级中的晶体管的输出端产生的寄生电感的变化减小。 包括末级晶体管的半导体芯片的一侧与形成在布线基板中的正方形凹部的内壁接触。 将半导体芯片精确地定位并固定在凹部的底部，由此使晶体管的漏极线固定。 然后，将漏电极设置在芯片顶部的芯片边缘与更靠近漏极焊盘的凹部的内壁接触。 金属化层与凹槽底部的芯片的尺寸相同，并且在金属化层上提供熔接材料。

公开(公告)号：US06946306B2

公开(公告)日：2005-09-20

申请号：US10983689

申请日：2004-11-09

申请人： Akio Ishizu ,  Kazutoshi Takashima ,  Shiro Oba ,  Yoshihiko Kobayashi ,  Tsutomu Ida ,  Shigeru Haga ,  Susumu Takada ,  Iwamichi Koujiro ,  Norinaga Arai ,  Yuji Kakegawa

发明人： Akio Ishizu ,  Kazutoshi Takashima ,  Shiro Oba ,  Yoshihiko Kobayashi ,  Tsutomu Ida ,  Shigeru Haga ,  Susumu Takada ,  Iwamichi Koujiro ,  Norinaga Arai ,  Yuji Kakegawa

IPC分类号： G01R31/26 ,  H01L21/50 ,  H01L21/58 ,  H01L21/66 ,  H01L21/98 ,  H01L23/04 ,  H01L23/10 ,  H01L23/13 ,  H01L23/498 ,  H01L23/50 ,  H01L23/544 ,  H01L25/16

CPC分类号： H01L22/20 ,  H01L21/50 ,  H01L23/04 ,  H01L23/10 ,  H01L23/13 ,  H01L23/49805 ,  H01L23/50 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/16 ,  H01L25/165 ,  H01L25/50 ,  H01L2223/54406 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/48247

摘要： A method of manufacturing a semiconductor device able to reduce the number of manufacturing steps and attain the rationalization of a manufacturing line is disclosed. The semiconductor device is a high-frequency module assembled by mounting chip parts (22) and semiconductor pellets (21) onto each of wiring substrates (2) formed on a matrix substrate (27) after inspection. A defect mark (2e) is affixed to a wiring substrate (2) as a block judged to be defective in the inspection of the matrix substrate (27), then in a series of subsequent assembling steps the defect mark (e) is recognized and the assembling work for the wiring substrate (2) with the defect mark (2e) thereon is omitted to attain the rationalization of a manufacturing line.

摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件能够减少制造步骤的数量并实现制造线的合理化。 半导体器件是通过在检查后将芯片部件（22）和半导体芯片（21）安装到形成在矩阵基板（27）上的每个布线基板（2）上而组装的高频模块。 作为在矩阵基板（27）的检查中被判断为有缺陷的块，在布线基板（2）上附着缺陷标记（2e），然后在一系列后续的组装步骤中识别缺陷标记（e） 并且省略其上具有缺陷标记（2e）的布线基板（2）的组装工作以实现生产线的合理化。

公开(公告)号：US20050101052A1

公开(公告)日：2005-05-12

申请号：US10961041

申请日：2004-10-12

申请人： Yoshihiko Kobayashi ,  Susumu Sato ,  Koki Tanimoto ,  Tomio Yamada ,  Hirokazu Nakajima ,  Tomoaki Kudaishi ,  Yoshinori Shiokawa ,  Toshiharu Niitsu ,  Tsutomu Ida

发明人： Yoshihiko Kobayashi ,  Susumu Sato ,  Koki Tanimoto ,  Tomio Yamada ,  Hirokazu Nakajima ,  Tomoaki Kudaishi ,  Yoshinori Shiokawa ,  Toshiharu Niitsu ,  Tsutomu Ida

IPC分类号： H01L23/28 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/56 ,  H05K1/03 ,  H05K3/00 ,  H05K3/28

CPC分类号： H05K3/0052 ,  H01L21/481 ,  H01L2224/48227 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K3/284 ,  H05K2201/09036 ,  H05K2201/0909 ,  H05K2203/302 ,  H01L2924/00012

摘要： In a dividing method according to the present invention, a wiring board formed of ceramic is forced up (upper swing) by a lower clamp claw of a clamper, and some of a protruded wiring board portion protruding from a conveying chute is pressed against a support body to perform a first division under bending stress. Thereafter, the upward-located clamper is rotatably swung (lower swing) downward to allow an upper clamp claw to press down the protruded wiring board portion, thereby performing a reverse division at the first division section again as a second division. Since the second division allows a tensile force to act on a remaining and thin non-divided resin portion, the non-divided resin portion is torn off. Thus, the perfect division is enabled. Fractionalizing is done by a one-row division and an individual division so that each semiconductor device is formed.

摘要翻译： 在根据本发明的分割方法中，由陶瓷制成的布线基板由夹持器的下夹爪推动（上摆），并且从输送槽突出的一些突出的布线板部分被压靠在支撑件 身体在弯曲应力下进行第一次分裂。 此后，向上定位的夹持器向下可旋转地摆动（下摆动），以允许上夹爪压下突出的布线板部分，从而在第一分割部分再次进行相反分割，作为第二分割。 由于第二分割允许张力作用在剩余的薄的未分割树脂部分上，所以未分割树脂部分被撕开。 因此，完美的划分得以实现。 通过单行分割和单独分割来进行分数化，从而形成每个半导体器件。

公开(公告)号：US06852553B2

公开(公告)日：2005-02-08

申请号：US10129305

申请日：2001-02-15

申请人： Akio Ishizu ,  Kazutoshi Takashima ,  Shiro Oba ,  Yoshihiko Kobayashi ,  Tsutomu Ida ,  Shigeru Haga ,  Susumu Takada ,  Iwamichi Koujiro ,  Norinaga Arai ,  Yuji Kakegawa

发明人： Akio Ishizu ,  Kazutoshi Takashima ,  Shiro Oba ,  Yoshihiko Kobayashi ,  Tsutomu Ida ,  Shigeru Haga ,  Susumu Takada ,  Iwamichi Koujiro ,  Norinaga Arai ,  Yuji Kakegawa

IPC分类号： G01R31/26 ,  H01L21/50 ,  H01L21/58 ,  H01L21/66 ,  H01L21/98 ,  H01L23/04 ,  H01L23/10 ,  H01L23/13 ,  H01L23/498 ,  H01L23/50 ,  H01L23/544 ,  H01L25/16 ,  H01L21/00 ,  H01L21/44

CPC分类号： H01L22/20 ,  H01L21/50 ,  H01L23/04 ,  H01L23/10 ,  H01L23/13 ,  H01L23/49805 ,  H01L23/50 ,  H01L23/544 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/16 ,  H01L25/165 ,  H01L25/50 ,  H01L2223/54406 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15313 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16315 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599 ,  H01L2224/32245 ,  H01L2224/48247

摘要： A method of manufacturing a semiconductor device able to reduce the number of manufacturing steps and attain the rationalization of a manufacturing line is disclosed. The semiconductor device is a high-frequency module assembled by mounting chip parts (22) and semiconductor pellets (21) onto each of wiring substrates (2) formed on a matrix substrate (27) after inspection. A defect mark (2e) is affixed to a wiring substrate (2) as a block judged to be defective in the inspection of the matrix substrate (27), then in a series of subsequent assembling steps the defect mark (e) is recognized and the assembling work for the wiring substrate (2) with the defect mark (2e) thereon is omitted to attain the rationalization of a manufacturing line.

摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件能够减少制造步骤的数量并实现制造线的合理化。 半导体器件是通过在检查后将芯片部件（22）和半导体芯片（21）安装到形成在矩阵基板（27）上的每个布线基板（2）上而组装的高频模块。 作为在矩阵基板（27）的检查中被判定为有缺陷的块，在布线基板（2）上附着有缺陷标记（2e），然后在一系列后续的组装步骤中识别缺陷标记（e） 省略了具有缺陷标记（2e）的布线基板（2）的组装工作，以实现生产线的合理化。

公开(公告)号：US5610587A

公开(公告)日：1997-03-11

申请号：US428108

申请日：1995-04-27

申请人： Hiroyuki Fujiuchi ,  Masaaki Takeshita ,  Kenji Uchida ,  Tsutomu Ida ,  Hisakazu Okumura ,  Mitsuhiko Nakajima

发明人： Hiroyuki Fujiuchi ,  Masaaki Takeshita ,  Kenji Uchida ,  Tsutomu Ida ,  Hisakazu Okumura ,  Mitsuhiko Nakajima

IPC分类号： G08B13/14 ,  G08B13/06

CPC分类号： G08B13/1454 ,  G08B13/14 ,  G08B13/1463 ,  G08B13/1472 ,  Y10T70/5004

摘要： A theft preventive apparatus is attached to a commodity or the like exhibited in a shop, for outputting an alarm when detached therefrom.Conventionally, a battery is used as a power source for driving an alarm output device, and power supply is turned on and off by moving the battery. Even in a non-use state, an operation could be started inadvertently by vibration or the like.The theft preventive apparatus of this invention includes an attached state detecting device (3, 103) exposed outside a box (2) for detecting a state of attachment to an object of theft prevention, alarm output means (G) mounted in said box (2) for detecting removal of said box (2) from the object of theft prevention based on information from said attached state detecting device (3, 103), and outputting an alarm in time of detection of the removal, a battery (V) mounted in said box (2) for driving said alarm output means (G), and a power supply switch (6) for turning power supply on and off between said battery (V) and said alarm output means (G). Consequently, by turning off the power supply switch, the theft preventive apparatus, even in a non-use state, does not start operating inadvertently by vibration or the like, thereby avoiding wasteful consumption of battery power.

摘要翻译： PCT No.PCT / JP94 / 01406 Sec。 371日期：1995年04月27日 102（e）日期1995年4月27日PCT 1994年8月25日PCT公布。 第WO95 / 06923号公报 日期1995年3月9日防盗装置安装在商店等展示的商品等上，用于在从其中分离时输出警报。 通常，电池用作用于驱动报警输出装置的电源，并且通过移动电池来打开和关闭电源。 即使处于非使用状态，也可以通过振动等无意中开始操作。 本发明的防盗装置包括：暴露在箱体外部的附件状态检测装置（3,103），用于检测与防盗物体的连接状态，安装在所述箱体（2）中的报警输出装置（G） ），用于根据来自所述附加状态检测装置（3,103）的信息，检测从所述防盗目的中移除所述盒（2），并在检测到所述拆卸的时候输出警报;安装在 用于驱动所述报警输出装置（G）的所述盒（2）和用于在所述电池（V）和所述报警输出装置（G）之间接通和断开电源的电源开关（6）。 因此，通过关闭电源开关，防盗装置即使处于非使用状态也不会由于振动等而不经意地开始操作，从而避免浪费电池电力的消耗。

公开(公告)号：US07453147B2

公开(公告)日：2008-11-18

申请号：US11326341

申请日：2006-01-06

申请人： Tsutomu Ida ,  Yoshihiko Kobayashi ,  Masakazu Hashizume ,  Yoshinori Shiokawa ,  Sakae Kikuchi

发明人： Tsutomu Ida ,  Yoshihiko Kobayashi ,  Masakazu Hashizume ,  Yoshinori Shiokawa ,  Sakae Kikuchi

IPC分类号： H01L23/34

CPC分类号： H01L25/0655 ,  H01L23/13 ,  H01L23/66 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L2223/6644 ,  H01L2224/0401 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48639 ,  H01L2224/48647 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/81143 ,  H01L2224/83192 ,  H01L2224/83801 ,  H01L2224/85 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/14 ,  H01L2924/15151 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/1517 ,  H01L2924/15313 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/00012

摘要： The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

摘要翻译： 在多级放大器单元的最后级中的晶体管的输出端产生的寄生电感的变化减小。 包括末级晶体管的半导体芯片的一侧与形成在布线基板中的正方形凹部的内壁接触。 将半导体芯片精确地定位并固定在凹部的底部，由此使晶体管的漏极线固定。 然后，将漏电极设置在芯片顶部的芯片边缘与更靠近漏极焊盘的凹部的内壁接触。 金属化层与凹槽底部的芯片的尺寸相同，并且在金属化层上提供熔接材料。