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    Low k precursors providing superior integration attributes
    2.
    发明授权
    Low k precursors providing superior integration attributes 有权
    提供优异的集成属性的低k前体

    公开(公告)号：US08753986B2

    公开(公告)日：2014-06-17

    申请号：US12969042

    申请日：2010-12-15

    申请人： Mary Kathryn Haas ,  Raymond Nicholas Vrtis ,  Laura M. Matz

    发明人： Mary Kathryn Haas ,  Raymond Nicholas Vrtis ,  Laura M. Matz

    IPC分类号： H01L21/31

    CPC分类号： H01L21/02214 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348

    摘要： A deposition for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including one precursor of an organosilane or an organosiloxane, and a porogen distinct from the precursor, wherein the porogen is aromatic in nature; applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a film, containing the porogen; and removing substantially all of the organic material by UV radiation to provide the porous film with pores and a dielectric constant less than 2.6.

    摘要翻译： 一种用于生产多孔有机硅玻璃膜的沉积物，其特征在于，包括：在真空室中引入包括有机硅烷或有机硅氧烷的一种前体的气态试剂和与前体不同的致孔剂，其中致孔剂本质上是芳族的; 向室中的气态试剂施加能量以诱导气态试剂沉积含有致孔剂的膜的反应; 并通过紫外线辐射去除基本上所有的有机材料，以提供具有小于2.6的孔隙和介电常数的多孔膜。

    Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
    3.
    发明授权
    Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants 有权
    孔原子，孔隙前体和使用它们的方法提供具有低介电常数的多孔有机硅玻璃膜

    公开(公告)号：US08293001B2

    公开(公告)日：2012-10-23

    申请号：US13031387

    申请日：2011-02-21

    申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

    发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Jean Louise Vincent ,  Aaron Scott Lukas ,  Manchao Xiao ,  John Anthony Thomas Norman

    IPC分类号： C09D7/12

    CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274

    摘要： A porous organosilica glass (OSG) film consists of a single phase of a material represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic %, x is from 5 to 30 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the film has pores and a dielectric constant less than 2.6. The film is provided by a chemical vapor deposition method in which a preliminary film is deposited from organosilane and/or organosiloxane precursors and pore-forming agents (porogens) wherein the precursor is a compound of the formula R1n(OR2)p(O(O)CR4)3−n−pSi—R7—SiR3m(O(O)CR5)q(OR6)3−m−q where R1 and R3 are independently H or C1 to C4 linear or branched, saturated, singly or multiply unsaturated, cyclic, partially or fully fluorinated hydrocarbon; R2, R8 and R7 are independently C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, R4 and Rs are independently H, C1 to C6 linear or branched, saturated, singly or multiply unsaturated, cyclic, aromatic, partially or fully fluorinated hydrocarbon, n is 0 to 3, m is 0 to 3, q is 0 to 3 and p is 0 to 3, provided that n+m>1, n+p 3, and m+q 3, wherein the porogen is selected from the group consisting of norbornadiene, alpha-terpinene, limonene, cyclooctane, and cymene. The porogens are subsequently removed to provide the porous film.

    摘要翻译： 多孔有机硅玻璃（OSG）膜由式SivOwCxHyFz表示的材料的单相组成，其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜 65原子％，x为5〜30原子％，y为10〜50原子％，z为0〜15原子％，其中，膜的孔隙和介电常数小于2.6。 该薄膜由化学气相沉积方法提供，其中预备薄膜由有机硅烷和/或有机硅氧烷前体和成孔剂（致孔剂）沉积，其中前体是式R1n（OR2）p（O（O） ）CR 4）3-n-pSi-R 7 -SiR 3 m（O（O）CR 5）q（OR 6）3-m-q其中R 1和R 3独立地为H或C 1至C 4直链或支链，饱和，单或多不饱和， 环状，部分或完全氟化的烃; R2，R8和R7独立为C1至C6直链或支链，饱和，单或多不饱和，环状，芳族，部分或全部是氟化的烃，R4和R5独立地为H，C1至C6直链或支链，饱和，单或多 不饱和的，环状的，芳族的，部分或完全氟化的烃，n为0至3，m为0至3，q为0至3，p为0至3，条件是n + m> 1，n + p 3和 m + q 3，其中致孔剂选自降冰片二烯，α-萜品烯，柠檬烯，环辛烷和伞花烃。 随后除去致孔剂以提供多孔膜。

    Low dielectric constant material and method of processing by CVD
    5.
    发明授权
    Low dielectric constant material and method of processing by CVD 有权
    低介电常数材料和通过CVD处理的方法

    公开(公告)号：US06716770B2

    公开(公告)日：2004-04-06

    申请号：US09863150

    申请日：2001-05-23

    申请人： Mark Leonard O'Neill ,  Brian Keith Peterson ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis

    发明人： Mark Leonard O'Neill ,  Brian Keith Peterson ,  Jean Louise Vincent ,  Raymond Nicholas Vrtis

    IPC分类号： C23C1640

    CPC分类号： H01L21/02131 ,  C03C3/045 ,  C03C14/008 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/316 ,  H01L21/31633

    摘要： Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. A CVD method includes: (a) providing a substrate within a vacuum chamber; (b) introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and (c) applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.

    摘要翻译： 有机氟硅酸盐玻璃膜含有有机物质和无机氟，不含大量的碳氟化合物。 优选的膜由式SivOwCxHyFz表示，其中v + w + x + y + z = 100％，v为10至35原子％，w为10至65原子％，y为10至50原子％，x 为1〜30原子％，z为0.1〜15原子％，x / z任选大于0.25，基本上没有氟与碳键合。 CVD方法包括：（a）在真空室内提供衬底; （b）在真空室中引入气体试剂，其中包括提供供气的气体，供氧气体和至少一种选自有机硅烷和有机硅氧烷的前体气体; 和（c）向室中的气态试剂施加能量以诱导气态试剂的反应并在基底上形成膜。

    Adhesion to copper and copper electromigration resistance
    7.
    发明授权
    Adhesion to copper and copper electromigration resistance 有权
    铜和铜的电迁移阻力

    公开(公告)号：US08043976B2

    公开(公告)日：2011-10-25

    申请号：US12406467

    申请日：2009-03-18

    申请人： Raymond Nicholas Vrtis ,  Laura M. Matz ,  Mark Leonard O'Neill

    发明人： Raymond Nicholas Vrtis ,  Laura M. Matz ,  Mark Leonard O'Neill

    IPC分类号： H01L23/52

    CPC分类号： H01L21/76849 ,  C23C16/02 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76834 ,  H01L21/76883 ,  Y10T428/13

    摘要： The present invention relates to the improved adhesion between a patterned conductive metal layer, usually a copper layer, and a patterned barrier dielectric layer. The structure with the improved adhesion comprises an adhesion layer between a patterned barrier dielectric layer and a patterned conductive metal layer. The adhesion layer improves adhesion between the metal layer and the barrier layer without increasing the copper bulk electrical resistance. The method of making the structure with the improved adhesion comprises steps of thermal expositing the patterned conductive metal layer to an organometallic precursor to deposit an adhesion layer at least on the top of the patterned conductive metal layer.

    摘要翻译： 本发明涉及图案化导电金属层（通常为铜层）和图案化势垒介电层之间的改进的粘合性。 具有改进的粘附性的结构包括在图案化阻挡介电层和图案化的导电金属层之间的粘合层。 粘附层改善了金属层和阻挡层之间的粘附性，而不增加铜体电阻。 制造具有改善的粘合性的结构的方法包括将图案化的导电金属层热展开到有机金属前体的步骤，以至少在图案化的导电金属层的顶部沉积粘附层。

    ANTIREFLECTIVE COATINGS
    10.
    发明申请
    ANTIREFLECTIVE COATINGS 审中-公开
    抗反射涂层

    公开(公告)号：US20090096106A1

    公开(公告)日：2009-04-16

    申请号：US12244426

    申请日：2008-10-02

    申请人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Andrew David Johnson

    发明人： Raymond Nicholas Vrtis ,  Mark Leonard O'Neill ,  Andrew David Johnson

    IPC分类号： H01L23/52 ,  H01L21/311

    CPC分类号： H01L21/31144 ,  C23C16/30 ,  G03F7/091 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0276 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/318

    摘要： A method of forming a feature in a substrate comprising the steps of: forming a dielectric layer on a substrate; forming an antireflective coating over the dielectric layer; forming a photoresist pattern over the antireflective coating; etching the dielectric layer through the patterned photoresist; and removing the antireflective coating and the photoresist, wherein the antireflective coating is a film represented by the formula SivOwCxNuHyFz, wherein v+w+x+u+y+z=100%, v is from 1 to 35 atomic %, w is from 1 to 40 atomic %, x is from 5 to 80 atomic %, u is from 0 to 50 atomic %, y is from 10 to 50 atomic % and z is from 0 to 15 atomic %, wherein the antireflective coating is formed by the chemical vapor deposition of a composition comprising (1) at least one precursor selected from the group consisting of an organosilane, an organosiloxane, and an aminosilane; and (2) a hydrocarbon, and wherein the hydrocarbon is substantially not removed from the antireflective coating.

    摘要翻译： 一种在衬底中形成特征的方法，包括以下步骤：在衬底上形成电介质层; 在电介质层上形成抗反射涂层; 在抗反射涂层上形成光致抗蚀剂图案; 通过图案化的光致抗蚀剂蚀刻介电层; 并且去除抗反射涂层和光致抗蚀剂，其中抗反射涂层是由式SivOwCxNuHyFz表示的膜，其中v + w + x + u + y + z = 100％，v为1至35原子％，w为 1至40原子％，x为5至80原子％，u为0至50原子％，y为10至50原子％，z为0至15原子％，其中抗反射涂层由 组合物的化学气相沉积，其包含（1）至少一种选自有机硅烷，有机硅氧烷和氨基硅烷的前体; 和（2）烃，其中烃基本上不从抗反射涂层中除去。