公开(公告)号：US09508422B2

公开(公告)日：2016-11-29

申请号：US14983802

申请日：2015-12-30

申请人： Kabushiki Kaisha Toshiba ,  SanDisk Corporation

发明人： Tomoharu Tanaka ,  Jian Chen

IPC分类号： G11C7/10 ,  G11C11/56 ,  G11C16/04 ,  G11C16/12 ,  G11C16/34 ,  H01L27/115 ,  G11C16/10

CPC分类号： G11C11/5628 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/34 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/3459 ,  G11C16/3481 ,  G11C2211/5621 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.

公开(公告)号：US09214525B2

公开(公告)日：2015-12-15

申请号：US14164065

申请日：2014-01-24

申请人： SanDisk Corporation

发明人： Jian Chen

IPC分类号： H01L29/423 ,  B82Y10/00 ,  G11C11/56 ,  G11C16/04 ,  G11C16/10 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66

CPC分类号： H01L29/42324 ,  B82Y10/00 ,  G11C11/5621 ,  G11C11/5671 ,  G11C16/04 ,  G11C16/10 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66825 ,  H01L29/66833

摘要： Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide, hafnium oxide, and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multi state (e.g., two, three or four bit) operation.

摘要翻译： 描述诸如非易失性存储器件的电子设备的方法和装置。 存储器件包括多层控制电介质，例如双层或三层。 多层控制电介质包括高k电介质材料如氧化铝，氧化铪和/或铪铝氧化物的混合膜的组合。 多层控制电介质提供增强的特性，包括增加的电荷保留，增强的存储器程序/擦除窗口，改善的可靠性和稳定性，具有单一或多状态（例如，两个，三个或四个位）操作的可行性。

公开(公告)号：US20140206182A1

公开(公告)日：2014-07-24

申请号：US14251092

申请日：2014-04-11

申请人： SanDisk Corporation

发明人： Jian Chen ,  Karen Chu Cruden ,  Xiangfeng Duan ,  Chao Liu ,  J. Wallace Parce

IPC分类号： H01L21/28

CPC分类号： H01L21/28008 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/28229 ,  H01L21/28273 ,  H01L21/3105 ,  Y10S977/774 ,  Y10S977/782 ,  Y10S977/845 ,  Y10S977/855 ,  Y10S977/89 ,  Y10S977/891

摘要： Methods are provided for forming a nanostructure array. An example method includes providing a first layer, providing nanostructures dispersed in a solution comprising a liquid form of a spin-on-dielectric, wherein the nanostructures comprise a silsesquioxane ligand coating, disposing the solution on the first layer, whereby the nanostructures form a monolayer array on the first layer, and curing the liquid form of the spin-on-dielectric to provide a solid form of the spin-on-dielectric. Numerous other aspects are provided.

摘要翻译： 提供了形成纳米结构阵列的方法。 一个示例性方法包括提供第一层，提供分散在包括液体形式的旋涂电介质的溶液中的纳米结构，其中纳米结构包括倍半硅氧烷配体涂层，将溶液设置在第一层上，由此纳米结构形成单层 阵列在第一层上，并且固化旋转电介质的液体形式以提供固体形式的旋涂电介质。 提供了许多其他方面。

公开(公告)号：US20140183613A1

公开(公告)日：2014-07-03

申请号：US14164065

申请日：2014-01-24

申请人： SanDisk Corporation

发明人： Jian Chen

IPC分类号： H01L29/423 ,  H01L29/51

CPC分类号： H01L29/42324 ,  B82Y10/00 ,  G11C11/5621 ,  G11C11/5671 ,  G11C16/04 ,  G11C16/10 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/42348 ,  H01L29/512 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66825 ,  H01L29/66833

摘要： Methods and apparatuses for electronic devices such as non-volatile memory devices are described. The memory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control dielectric includes a combination of high-k dielectric materials such as aluminum oxide, hafnium oxide, and/or hybrid films of hafnium aluminum oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program/erase window, improved reliability and stability, with feasibility for single or multi state (e.g., two, three or four bit) operation.

摘要翻译： 描述诸如非易失性存储器件的电子设备的方法和装置。 存储器件包括多层控制电介质，例如双层或三层。 多层控制电介质包括高k电介质材料如氧化铝，氧化铪和/或铪铝氧化物的混合膜的组合。 多层控制电介质提供增强的特性，包括增加的电荷保留，增强的存储器程序/擦除窗口，改善的可靠性和稳定性，具有单一或多状态（例如，两个，三个或四个位）操作的可行性。

公开(公告)号：US20040259291A1

公开(公告)日：2004-12-23

申请号：US10602373

申请日：2003-06-23

申请人： SanDisk Corporation

发明人： Hem P. Takiar

IPC分类号： H01L021/48 ,  H01L021/44 ,  H01L021/50

CPC分类号： H01L21/6835 ,  G06K19/077 ,  G06K19/07718 ,  G06K19/07732 ,  H01L21/561 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/544 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2221/68331 ,  H01L2223/54473 ,  H01L2223/54486 ,  H01L2224/05599 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： Improved techniques to produce integrated circuit products are disclosed. The improved techniques permit smaller and less costly production of integrated circuit products. One aspect of the invention is that the integrated circuit products are produced a batch at a time, and that singulation of the batch into individualized integrated circuit products uses a non-linear (e.g., non-rectangular or curvilinear) sawing or cutting action so that the resulting individualized integrated circuit packages no longer need to be completely rectangular. Another aspect of the invention is that the integrated circuit products can be produced with semiconductor assembly processing such that the need to provide an external package or container becomes optional.

摘要翻译： 公开了用于生产集成电路产品的改进的技术。 改进的技术允许集成电路产品的生产更小且成本更低。 本发明的一个方面是集成电路产品一次批量生产，并且将批次分成单独的集成电路产品使用非线性（例如，非矩形或曲线）锯切或切割动作，使得 所产生的个体化集成电路封装不再需要完全矩形。 本发明的另一方面是集成电路产品可以用半导体组装处理制造，使得需要提供外部封装或容器成为可选的。

公开(公告)号：US20040251523A1

公开(公告)日：2004-12-16

申请号：US10463051

申请日：2003-06-16

申请人： SanDisk Corporation

发明人： Hem P. Takiar

IPC分类号： H01L023/495

CPC分类号： H05K3/3426 ,  H01L23/3128 ,  H01L23/49575 ,  H01L24/48 ,  H01L25/105 ,  H01L2224/05599 ,  H01L2224/32145 ,  H01L2224/32188 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/85399 ,  H01L2225/1029 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/18165 ,  H05K2201/10515 ,  H05K2201/10689 ,  H05K2201/10931 ,  H05K2201/2081 ,  Y02P70/613 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： Improved apparatus and methods for stacking integrated circuit packages having leads are disclosed. According to one embodiment, the leads of an integrated circuit package are exposed and provided with solder balls so that corresponding leads of another integrated circuit package being stacked thereon can be electrically connected. The stacking results in increased integrated circuit density with respect to a substrate, yet the stacked integrated circuit packages are able to still enjoy having an overall thin or low profile.

摘要翻译： 公开了用于堆叠具有引线的集成电路封装的改进的装置和方法。 根据一个实施例，集成电路封装的引线被暴露并设置有焊球，使得堆叠在其上的另一个集成电路封装的相应引线可以电连接。 堆叠导致相对于衬底的集成电路密度增加，但是堆叠的集成电路封装仍然可以享受整体薄或薄的轮廓。

公开(公告)号：US20040177212A1

公开(公告)日：2004-09-09

申请号：US10281823

申请日：2002-10-28

申请人： SanDisk Corporation

发明人： Robert C. Chang ,  Bahman Qawami ,  Farshid Sabet-Sharghi

IPC分类号： G06F012/00

CPC分类号： G06F12/0246 ,  G06F2212/7211 ,  G11C16/349 ,  G11C16/3495

摘要： Methods and apparatus for maintaining an average erase count in a system memory of a non-volatile memory system are disclosed. According to one aspect of the present invention, a method for determining an average number of times each block of a number of blocks within a non-volatile memory of a memory system has been erased includes obtaining an erase count for each block that indicates a number of times each block has been erased. Once all the erase counts have been obtained, the erase counts are summed, and an average erase count that indicates the average number of times each block of the number of blocks has been erased is created by substantially dividing the sum by the number of blocks.

摘要翻译： 公开了用于维持非易失性存储器系统的系统存储器中的平均擦除次数的方法和装置。 根据本发明的一个方面，一种用于确定存储器系统的非易失性存储器内的多个块的每个块的平均次数已经被擦除的方法包括获得每个块的擦除计数，该块指示数字 的每个块已被擦除。 一旦获得了所有擦除计数，则将擦除计数相加，并且通过基本上将该和除以块数量来创建指示每个块的块的平均次数被擦除的平均擦除次数。

公开(公告)号：US20040103241A1

公开(公告)日：2004-05-27

申请号：US10679008

申请日：2003-10-02

申请人： SANDISK CORPORATION

发明人： Robert C. Chang ,  Bahman Qawami ,  Farshid Sabet-Sharghi

IPC分类号： G06F012/00

CPC分类号： G06F12/0246

摘要： Methods and apparatus for enabling contents to be efficiently stored in physical blocks of a non-volatile memory are disclosed. According to one aspect of the present invention, a method for performing a write operation in a non-volatile memory system which has a memory unit includes writing a first set of contents into a first physical sub-unit of the memory unit and writing a second set of contents into a second physical sub-unit of the memory unit after the first set of contents is written into the first physical sub-unit. The first physical sub-unit is sequentially before the second physical sub-unit in the memory unit. The first set of contents is associated with a second logical sub-unit of a logical unit and the second set of contents is associated with a first logical sub-unit of the logical unit that is sequentially before the second logical sub-unit in the logical unit.

摘要翻译： 公开了使内容能够有效地存储在非易失性存储器的物理块中的方法和装置。 根据本发明的一个方面，一种用于在具有存储器单元的非易失性存储器系统中执行写入操作的方法包括：将第一组内容写入到存储器单元的第一物理子单元中，并写入第二个 在将第一内容集合写入第一物理子单元之后，内容集合到存储器单元的第二物理子单元中。 第一物理子单元顺序地在存储单元中的第二物理子单元之前。 第一组内容与逻辑单元的第二逻辑子单元相关联，并且第二内容集合与逻辑单元的第一逻辑子单元相关联，该第一逻辑子单元顺序地在逻辑单元中的第二逻辑子单元之前 单元。

公开(公告)号：US20040083333A1

公开(公告)日：2004-04-29

申请号：US10678893

申请日：2003-10-02

申请人： SANDISK CORPORATION

发明人： Robert C. Chang ,  Bahman Qawami ,  Farshid Sabet-Sharghi

IPC分类号： G06F012/00

CPC分类号： G06F12/0246 ,  G06F11/1068

摘要： Methods and apparatus for using different error correction code algorithms to encode and to decode contents of blocks within a non-volatile memory are disclosed. According to one aspect of the present invention, a method for storing data within a non-volatile memory includes identifying a first block into which the data is to be stored, and obtaining an indicator associated with the first block. A determination may then be made regarding whether the indicator indicates that the data is to be encoded using a first algorithm. The data is encoded using the first algorithm when it is determined that the data is to be encoded using the first algorithm, after which point the data encoded using the first algorithm is written into the first block.

摘要翻译： 公开了使用不同纠错码算法对非易失性存储器内的块的内容进行编码和解码的方法和装置。 根据本发明的一个方面，一种用于在非易失性存储器内存储数据的方法包括识别要存储数据的第一块，以及获得与第一块相关联的指示符。 然后可以确定指示符是否指示使用第一算法对数据进行编码。 当确定要使用第一算法对数据进行编码时，使用第一算法对数据进行编码，之后将使用第一算法编码的数据写入第一块。

公开(公告)号：US20040080985A1

公开(公告)日：2004-04-29

申请号：US10281696

申请日：2002-10-28

申请人： SanDisk Corporation, A Delaware Corporation

发明人： Robert C. Chang ,  Bahman Qawami ,  Farshid Sabet-Sharghi

IPC分类号： G11C011/34

CPC分类号： G06F12/0246 ,  G06F2212/7211

摘要： Methods and apparatus for storing erase counts in a non-volatile memory of a non-volatile memory system are disclosed. According to one aspect of the present invention, a data structure in a non-volatile memory includes a first indicator that provides an indication of a number of times a first block of a plurality of blocks in a non-volatile memory has been erased. The data structure also includes a header that is arranged to contain information relating to the blocks in the non-volatile memory.