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公开(公告)号:US20100308421A1
公开(公告)日:2010-12-09
申请号:US12767071
申请日:2010-04-26
申请人: Akira MUTO , Yuichi MACHIDA , Nobuya KOIKE , Atsushi FUJIKI , Masaki TAMURA
发明人: Akira MUTO , Yuichi MACHIDA , Nobuya KOIKE , Atsushi FUJIKI , Masaki TAMURA
IPC分类号: H01L27/088 , H01L23/52 , H01L23/28
CPC分类号: H01L25/074 , H01L21/565 , H01L23/3107 , H01L23/49537 , H01L23/49562 , H01L23/49575 , H01L23/49582 , H01L2224/32245 , H01L2224/33181 , H01L2224/73253 , H01L2924/13091
摘要: The size of a semiconductor device is reduced. A semiconductor chip in which a power MOSFET is placed above a semiconductor chip in which another power MOSFET is formed and they are sealed with an encapsulation resin portion. The semiconductor chips are so arranged that the upper semiconductor chip does not overlap with the area positioned directly above a gate pad electrode of the lower semiconductor chip. The semiconductor chips are identical in size and the respective source pad electrodes and gate pad electrodes of the lower semiconductor chip and the upper semiconductor chip are identical in shape and arrangement. The lower semiconductor chip and the upper semiconductor chip are arranged with their respective centers displaced from each other.
摘要翻译: 半导体器件的尺寸减小。 一种半导体芯片,其中功率MOSFET被放置在其上形成另一功率MOSFET的半导体芯片之上,并且它们被密封树脂部分密封。 半导体芯片被布置成使得上半导体芯片不与位于下半导体芯片的栅极焊盘电极正下方的区域重叠。 半导体芯片的尺寸相同,并且下半导体芯片和上半导体芯片的各个源极焊盘电极和栅极焊盘电极的形状和布置相同。 下半导体芯片和上半导体芯片被布置成它们各自的中心彼此偏离。
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公开(公告)号:US20090215230A1
公开(公告)日:2009-08-27
申请号:US12358387
申请日:2009-01-23
申请人: Akira MUTO , Nobuya Koike , Katsuo Arai , Atsushi Fujiki
发明人: Akira MUTO , Nobuya Koike , Katsuo Arai , Atsushi Fujiki
IPC分类号: H01L21/56
CPC分类号: H01L21/565 , H01L23/3107 , H01L23/433 , H01L23/4334 , H01L23/49537 , H01L23/49551 , H01L23/49562 , H01L23/49575 , H01L24/29 , H01L24/33 , H01L24/36 , H01L24/40 , H01L24/41 , H01L24/48 , H01L24/83 , H01L25/115 , H01L25/117 , H01L2224/26145 , H01L2224/26175 , H01L2224/27013 , H01L2224/29101 , H01L2224/2929 , H01L2224/29339 , H01L2224/29499 , H01L2224/32014 , H01L2224/32245 , H01L2224/33181 , H01L2224/40247 , H01L2224/4899 , H01L2224/73263 , H01L2224/83051 , H01L2224/83101 , H01L2224/83139 , H01L2224/83192 , H01L2224/83801 , H01L2224/83815 , H01L2224/8385 , H01L2224/83855 , H01L2224/83862 , H01L2224/83885 , H01L2224/84801 , H01L2224/8485 , H01L2225/1029 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01067 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/1306 , H01L2924/14 , H01L2924/16195 , H01L2924/181 , H01L2924/1815 , H01L2924/30107 , H01L2924/3011 , H01L2924/351 , H01L2924/00 , H01L2924/07025 , H01L2924/3512 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/37099 , H01L2224/37599
摘要: The radiation performance of a resin sealed semiconductor package is enhanced and further the fabrication yield thereof is enhanced. A drain terminal coupled to the back surface drain electrode of a semiconductor chip is exposed at the back surface of an encapsulation resin section. Part of the following portion and terminal is exposed at the top surface of the encapsulation resin section: the first portion of a source terminal coupled to the source pad electrode of the semiconductor chip and a gate terminal coupled to the gate pad electrode of the semiconductor chip. The remaining part of the second portion of the source terminal and the gate terminal is exposed at the back surface of the encapsulation resin section. When this semiconductor device is manufactured, bonding material and a film member are placed between the drain terminal and the semiconductor chip. At the same time, paste-like bonding material and a film member are placed between the source terminal 3 and gate terminal and the semiconductor chip. The paste-like bonding material is cured and turned into bonding material. As the result of use of the film members, variation in the thickness of the bonding material is suppressed.
摘要翻译: 提高树脂密封半导体封装的放射性能,进一步提高其制造成品率。 耦合到半导体芯片的背表面漏电极的漏极端子在封装树脂部分的背面露出。 以下部分和端子的一部分暴露在封装树脂部分的顶表面处:耦合到半导体芯片的源极焊盘电极的源极端子的第一部分和耦合到半导体芯片的栅极焊盘电极的栅极端子 。 源极端子和栅极端子的第二部分的剩余部分在封装树脂部分的背面露出。 当制造该半导体器件时,将接合材料和膜构件放置在漏极端子和半导体芯片之间。 同时,在源极端子3和栅极端子与半导体芯片之间放置糊状结合材料和膜部件。 糊状接合材料固化并变成粘结材料。 作为使用膜构件的结果,抑制了接合材料的厚度的变化。
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公开(公告)号:US20130127032A1
公开(公告)日:2013-05-23
申请号:US13740354
申请日:2013-01-14
申请人: Hiroyuki NAKAMURA , Akira MUTO , Nobuya KOIKE , Atsushi NISHIKIZAWA , Yukihiro SATO , Katsuhiko FUNATSU
发明人: Hiroyuki NAKAMURA , Akira MUTO , Nobuya KOIKE , Atsushi NISHIKIZAWA , Yukihiro SATO , Katsuhiko FUNATSU
IPC分类号: H01L23/495 , H01L21/56
CPC分类号: H01L23/495 , H01L21/4828 , H01L21/56 , H01L21/565 , H01L23/3107 , H01L23/49503 , H01L23/49541 , H01L23/49548 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/2919 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/484 , H01L2224/49171 , H01L2224/73265 , H01L2224/838 , H01L2224/85439 , H01L2224/85455 , H01L2224/92247 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2924/3512 , H01L2224/05599
摘要: To prevent, in a resin-sealed type semiconductor package, generation of cracks in a die bonding material used for mounting of a semiconductor chip. A semiconductor chip is mounted over the upper surface of a die pad via a die bonding material, followed by sealing with an insulating resin. The top surface of the die pad to be brought into contact with the insulating resin is surface-roughened, while the bottom surface of the die pad and an outer lead portion are not surface-roughened.
摘要翻译: 为了防止在树脂密封型半导体封装中产生用于安装半导体芯片的芯片接合材料中的裂纹。 半导体芯片通过芯片接合材料安装在芯片焊盘的上表面上,然后用绝缘树脂密封。 要与绝缘树脂接触的芯片焊盘的顶表面被粗糙化,而芯片焊盘的底表面和外部引线部分没有被表面粗糙化。
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公开(公告)号:US20100258922A1
公开(公告)日:2010-10-14
申请号:US12718200
申请日:2010-03-05
申请人: Hiroyuki NAKAMURA , Akira MUTO , Nobuya KOIKE , Atsushi NISHIKIZAWA , Yukihiro SATO , Katsuhiko FUNATSU
发明人: Hiroyuki NAKAMURA , Akira MUTO , Nobuya KOIKE , Atsushi NISHIKIZAWA , Yukihiro SATO , Katsuhiko FUNATSU
IPC分类号: H01L23/495 , H01L21/60 , H01L21/56
CPC分类号: H01L23/495 , H01L21/4828 , H01L21/56 , H01L21/565 , H01L23/3107 , H01L23/49503 , H01L23/49541 , H01L23/49548 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L2224/2919 , H01L2224/32245 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/484 , H01L2224/49171 , H01L2224/73265 , H01L2224/838 , H01L2224/85439 , H01L2224/85455 , H01L2224/92247 , H01L2924/00014 , H01L2924/01002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/07802 , H01L2924/14 , H01L2924/15747 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2924/00012 , H01L2924/3512 , H01L2224/05599
摘要: To prevent, in a resin-sealed type semiconductor package, generation of cracks in a die bonding material used for mounting of a semiconductor chip. A semiconductor chip is mounted over the upper surface of a die pad via a die bonding material, followed by sealing with an insulating resin. The top surface of the die pad to be brought into contact with the insulating resin is surface-roughened, while the bottom surface of the die pad and an outer lead portion are not surface-roughened.
摘要翻译: 为了防止在树脂密封型半导体封装中产生用于安装半导体芯片的芯片接合材料中的裂纹。 半导体芯片通过芯片接合材料安装在芯片焊盘的上表面上,然后用绝缘树脂密封。 要与绝缘树脂接触的芯片焊盘的顶表面被粗糙化,而芯片焊盘的底表面和外部引线部分没有被表面粗糙化。
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公开(公告)号:US20100175251A1
公开(公告)日:2010-07-15
申请号:US12749255
申请日:2010-03-29
申请人: Akira MUTO , Tomokazu TANAKA
发明人: Akira MUTO , Tomokazu TANAKA
IPC分类号: H05K3/10
CPC分类号: H05K1/118 , H01R12/79 , H05K1/0219 , H05K1/0237 , H05K3/42 , H05K2201/093 , H05K2201/09381 , H05K2201/09409 , H05K2201/09481 , H05K2201/09618 , H05K2201/09727 , Y10T29/4913 , Y10T29/49155
摘要: A flexible printed circuit board has an insulation layer, a first signal wiring layer including a microstrip line, a second signal wiring layer including a signal connection terminal for allowing the microstrip line to connect the exterior connector electrically, and a ground conductive section having a ground connection terminal for connecting the exterior connector. The microstrip line and the signal connection terminal are connected to each other by a wiring via hole. The wiring via hole passes through the insulation layer, the first signal wiring layer, and the second signal wiring layer. The microstrip line has a taper section which gradually enlarges a width of the microstrip line toward the wiring via hole in the vicinity of the wiring via hole. The ground conductive section that corresponds to the microstrip line has a taper section with a shape matching the taper section of the microstrip line.
摘要翻译: 柔性印刷电路板具有绝缘层,包括微带线的第一信号布线层,包括用于允许微带线将外部连接器电连接的信号连接端子的第二信号布线层和具有地面的接地导电部分 用于连接外部连接器的连接端子。 微带线和信号连接端子通过布线孔相互连接。 布线通孔穿过绝缘层,第一信号布线层和第二信号布线层。 微带线具有锥形部,其在布线通孔附近逐渐扩大微带线的宽度朝向布线通孔。 对应于微带线的接地导电部分具有与微带线的锥形部分匹配的形状的锥形部分。
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公开(公告)号:US20110089558A1
公开(公告)日:2011-04-21
申请号:US12906122
申请日:2010-10-17
申请人: Akira MUTO , Akira Mishima , Takuro Kanazawa , Ochi Kentaro , Tetsuo Iijima , Katsuo Ishizaka
发明人: Akira MUTO , Akira Mishima , Takuro Kanazawa , Ochi Kentaro , Tetsuo Iijima , Katsuo Ishizaka
CPC分类号: H01L25/072 , H01L23/3121 , H01L24/37 , H01L24/40 , H01L25/115 , H01L25/16 , H01L2224/32225 , H01L2224/37147 , H01L2224/40095 , H01L2224/40137 , H01L2224/73221 , H01L2224/83801 , H01L2224/84801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01058 , H01L2924/01074 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/09701 , H01L2924/12036 , H01L2924/13055 , H01L2924/1306 , H01L2924/15747 , H01L2924/181 , H01L2924/1815 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要: There is provided a technology capable of reducing the mounting burden on the part of a customer which is a recipient of a package. Over a metal board, a single package and another single package are mounted together via an insulation adhesion sheet, thereby to form one composite package. As a result, as compared with the case where six single packages are mounted, the number of packages to be mounted is smaller in the case where three sets of the composite packages are mounted. This can reduce the mounting burden on the part of a customer.
摘要翻译: 提供了能够减少作为包装的接收者的顾客的部分的安装负担的技术。 在金属板上,单个包装和另一个单一包装通过绝缘粘合片安装在一起,从而形成一个复合包装。 结果,与安装六个单个包装件的情况相比,在安装三组复合包装的情况下,要安装的包装件的数量较小。 这可以减少客户的安装负担。
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公开(公告)号:US20080220568A1
公开(公告)日:2008-09-11
申请号:US12117359
申请日:2008-05-08
申请人: Akira MUTO , Ichio Shimizu , Katsuo Arai , Hidemasa Kagii , Hiroshi Sato , Hiroyuki Nakamura , Takuya Nakajo , Keiichi Okawa , Masahiko Osaka
发明人: Akira MUTO , Ichio Shimizu , Katsuo Arai , Hidemasa Kagii , Hiroshi Sato , Hiroyuki Nakamura , Takuya Nakajo , Keiichi Okawa , Masahiko Osaka
IPC分类号: H01L23/28
CPC分类号: H01L23/49562 , H01L23/3107 , H01L23/49537 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/84 , H01L2224/32245 , H01L2224/371 , H01L2224/37147 , H01L2224/83801 , H01L2224/8385 , H01L2224/84801 , H01L2224/8485 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01051 , H01L2924/01067 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/1306 , H01L2924/14 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要: A semiconductor device in the form of a resin sealed semiconductor package is disclosed, wherein a gate terminal connected to a gate pad electrode formed on a surface of a semiconductor chip and a source terminal connected to a source pad electrode formed on the chip surface exposed to a back surface of a sealing resin portion, a first portion of a drain terminal connected to a back-surface drain electrode of the semiconductor chip is exposed to an upper surface of the sealing resin portion, and a second portion of the drain terminal formed integrally with the first portion of the drain terminal is exposed to the back surface of the sealing resin portion. When forming the sealing resin portion in such a semiconductor device, first the sealing resin portion is formed so as to also cover an upper surface of the first portion of the drain terminal and thereafter the upper surface side of the sealing resin portion is polished by liquid honing, thereby allowing the upper surface of the first portion of the drain terminal to be exposed on the upper surface of the sealing resin portion. Both heat dissipating property and production yield of the semiconductor device are improved.
摘要翻译: 公开了一种树脂密封半导体封装形式的半导体器件,其中连接到形成在半导体芯片的表面上的栅极焊盘电极的栅极端子和连接到形成在芯片表面上的源极焊盘电极的源极端子暴露于 密封树脂部分的背面,连接到半导体芯片的背面漏电极的漏极端子的第一部分暴露于密封树脂部分的上表面,并且漏极端子的第二部分整体地形成 漏极端子的第一部分暴露于密封树脂部分的背面。 当在这种半导体器件中形成密封树脂部分时,首先形成密封树脂部分,以便也覆盖漏极端子的第一部分的上表面,此后密封树脂部分的上表面侧被液体 从而允许排水端子的第一部分的上表面暴露在密封树脂部分的上表面上。 改善了半导体器件的散热性能和生产成本。
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