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35 条记录 (耗时 0.02 秒)

    Semiconductor memory device
    1.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号：US4060796A

    公开(公告)日：1977-11-29

    申请号：US758447

    申请日：1977-01-11

    申请人： Ryoiku Togei ,  Akira Takei ,  Yoshihiko Hika ,  Kunihiko Wada

    发明人： Ryoiku Togei ,  Akira Takei ,  Yoshihiko Hika ,  Kunihiko Wada

    IPC分类号： G11C11/35 ,  H01L21/3205 ,  H01L27/07 ,  H01L27/108 ,  H01L29/423 ,  H01L29/49 ,  G11C11/40

    CPC分类号： H01L27/0733 ,  G11C11/35 ,  H01L21/32055 ,  H01L27/10805 ,  H01L29/42396 ,  H01L29/4983

    摘要： A semiconductor memory device provided with one transferring electrode, one gate electrode and one diode of a charge coupled device is produced by a process with a reduced number of steps of diffusion and patterning. Both electrodes consists of doped polycrystalline silicon and both are electrically connected to a resistive layer which consists of non-doped polycrystalline silicon. A potential barrier between the region of both electrodes is removed due to the resistive layer. Resistive layer is formed by utilization of a two-stage deposition of the polycrystalline silicon layer with appropriate mashing steps.

    摘要翻译： 设置有电荷耦合器件的一个转移电极，一个栅极电极和一个二极管的半导体存储器件通过具有减少的扩散步骤和图案化步骤的工艺产生。 两个电极由掺杂的多晶硅组成，并且它们都电连接到由非掺杂多晶硅组成的电阻层。 由于电阻层，两个电极的区域之间的势垒被去除。 通过利用适当的糖化步骤的多晶硅层的两级沉积形成电阻层。

    Semiconductor memory device
    4.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号：US4062037A

    公开(公告)日：1977-12-06

    申请号：US677130

    申请日：1976-04-15

    申请人： Ryoiku Togei ,  Akira Takei ,  Kunihiko Wada

    发明人： Ryoiku Togei ,  Akira Takei ,  Kunihiko Wada

    IPC分类号： G11C11/56 ,  G11C27/04 ,  H01L21/265 ,  H01L21/339 ,  H01L21/74 ,  H01L21/8242 ,  H01L27/07 ,  H01L27/10 ,  H01L27/108 ,  H01L29/762 ,  H01L29/78

    CPC分类号： H01L27/0733 ,  H01L27/108

    摘要： A semiconductor memory device, which comprises: a P-type semiconductor material comprising on the surface thereof, an N-type doped layer, one surface region of the substrate adjoining the doped layer being used as a gate region, and further comprising in the interior thereof an N-type buried layer below another surface region of said substrate adjoining said one surface region. Electric charges representing information are stored in the buried layer. The reading time and the refreshing period are improved by shortening said reading time and lengthening said refreshing time utilization of said N-type buried layer.

    摘要翻译： 一种半导体存储器件，包括：在其表面上包括N型掺杂层的P型半导体材料，邻接所述掺杂层的所述衬底的一个表面区域用作栅极区域，并且还包括在所述内部 在与所述一个表面区域相邻的所述基板的另一表面区域下面的N型掩埋层。 表示信息的电荷被存储在掩埋层中。 通过缩短所述读取时间并延长所述N型埋层的所述刷新时间利用率来改善读取时间和刷新周期。

    Nonvolatile semiconductor memory device
    5.
    发明授权
    Nonvolatile semiconductor memory device 失效
    非易失性半导体存储器件

    公开(公告)号：US4462089A

    公开(公告)日：1984-07-24

    申请号：US331286

    申请日：1981-12-16

    申请人： Takashi Miida ,  Yoshihiko Hika ,  Akira Takei

    发明人： Takashi Miida ,  Yoshihiko Hika ,  Akira Takei

    IPC分类号： H01L21/8247 ,  G11C16/04 ,  H01L29/788 ,  H01L29/792 ,  G11C11/40

    CPC分类号： H01L29/7886 ,  G11C16/0416

    摘要： A nonvolatile semiconductor memory device of a floating-gate type comprises a floating-gate and two control gates. The floating-gate is divided into two conductive regions having a conductivity type opposite to each other. A first control gate is placed above a first region and a second control gate is placed above a second region. In this device, the erase operation is performed by causing avalanche breakdown within the floating-gate.

    摘要翻译： 浮栅型的非易失性半导体存储器件包括浮栅和两个控制栅。 浮栅被分成具有彼此相反的导电类型的两个导电区域。 第一控制栅极位于第一区域的上方，第二控制栅极位于第二区域的上方。 在该装置中，通过使浮栅内的雪崩击穿来进行擦除操作。

    INFORMATION RECORDING DEVICE
    7.
    发明申请
    INFORMATION RECORDING DEVICE 有权
    信息记录装置

    公开(公告)号：US20130249164A1

    公开(公告)日：2013-09-26

    申请号：US13990644

    申请日：2011-11-30

    申请人： Naoki Yokoyama ,  Akira Takei ,  Tatsuya Asakawa ,  Hiromitsu Tamura ,  Yuichi Aihara

    发明人： Naoki Yokoyama ,  Akira Takei ,  Tatsuya Asakawa ,  Hiromitsu Tamura ,  Yuichi Aihara

    IPC分类号： B65H5/06

    CPC分类号： B65H5/062 ,  B41J3/50 ,  B41J11/006 ,  B41J13/12 ,  G03G15/70 ,  G03G21/1638 ,  G03G21/1642

    摘要： Provided is an information recording device in which jam processing operation can be easily performed with simple operation when a recording medium such as a card is jammed in a conveyance passage. A card storing section and a medium conveyance passage for conveying a card to an image forming section are arranged in a housing at upper and lower sides and a passage open-close member for removing a card jammed at the image forming section is arranged therebetween. Then, electronic information recording means is incorporated in the passage open-close member and a medium conveyance path which conveys a card toward the electronic information recording means is arranged on a medium introduction passage for feeding a card from the card storing section to the medium conveyance passage. According to the above, a card jammed at the image forming section or the information recording section can be easily removed to the outside of the device by opening the card storing section.

    摘要翻译： 提供一种信息记录装置，其中当诸如卡片的记录介质卡在输送通道中时，可以简单地进行卡纸处理操作。 在上下侧的壳体中配置有卡片存储部和用于将卡传送到图像形成部的介质输送通道，并且布置有用于去除卡在图像形成部的卡的通道开闭部件。 然后，电子信息记录装置结合在通道开 - 关构件中，并且向电子信息记录装置传送卡的介质输送路径被布置在介质引入通道上，用于将卡从卡存储部分馈送到介质输送 通道。 根据上述，通过打开卡存储部，可以容易地将卡在图像形成部分或信息记录部分的卡片移除到装置的外部。

    System and method for controlling the opening angle of a throttle valve according to the position of an accelerator for an automotive vehicle
    9.
    发明授权
    System and method for controlling the opening angle of a throttle valve according to the position of an accelerator for an automotive vehicle 失效
    根据用于机动车辆的加速器的位置来控制节气门的开度的系统和方法

    公开(公告)号：US4718380A

    公开(公告)日：1988-01-12

    申请号：US849708

    申请日：1986-04-09

    申请人： Shinji Katayose ,  Minoru Tamura ,  Hideaki Inoue ,  Akira Takei ,  Takashi Oka

    发明人： Shinji Katayose ,  Minoru Tamura ,  Hideaki Inoue ,  Akira Takei ,  Takashi Oka

    IPC分类号： F02D11/10 ,  F02D9/02

    CPC分类号： F02D11/105 ,  F02D2011/102

    摘要： A system and method for controlling the opening angle of a throttle valve installed within an engine for a vehicle, in which the rate of change of the opening angular position of the throttle valve is calculated as a substantially cubic function of a relative rate of change in an angular position of an accelerator pedal, so that the speed of vehicle is held approximately constant when there is no consistent change in the angular position of the accelerator pedal and the speed of vehicle changes quickly as the rate of change of the angular position of the accelerator pedal increases.

    摘要翻译： 一种用于控制安装在用于车辆的发动机内的节流阀的开启角度的系统和方法，其中将节流阀的开度角位置的变化率计算为相对变化率的基本上立方函数 加速器踏板的角度位置，使得当加速器踏板的角位置没有一致的变化并且车辆速度快速地改变时，车辆的速度保持大致恒定，因为车速的角位置的变化率 油门踏板增加。

    Apparatus for throttle valve control
    10.
    发明授权
    Apparatus for throttle valve control 失效
    节流阀控制装置

    公开(公告)号：US4660520A

    公开(公告)日：1987-04-28

    申请号：US853873

    申请日：1986-04-21

    申请人： Hideaki Inoue ,  Shinji Katayose ,  Akira Takei ,  Takashi Oka

    发明人： Hideaki Inoue ,  Shinji Katayose ,  Akira Takei ,  Takashi Oka

    IPC分类号： B60K26/04 ,  F02D9/02 ,  F02D11/10 ,  F02D41/00 ,  F02D41/08 ,  F02D41/04

    CPC分类号： F02D11/106 ,  F02D2200/602 ,  F02D2250/16

    摘要： An apparatus responsive to a change in the position of an accelerator pedal for controlling movement of a throttle valve situated within an induction passage. The apparatus includes a control circuit which determines new and minimum values for the position of the accelerator pedal and determines a demand value corresponding to a setting of the position of the throttle valve as a function of the difference between the new and minimum values. The control circuit substitutes the new value for the minimum value when the accelerator pedal remains released and placed at the same position for a predetermined time.

    摘要翻译： 一种响应于加速器踏板的位置变化的装置，用于控制位于进气通道内的节流阀的运动。 该装置包括控制电路，其确定加速器踏板的位置的新值和最小值，并且根据新值和最小值之间的差确定与节气门位置的设定对应的需求值。 当加速踏板保持释放并且在相同位置放置预定时间时，控制电路将新值替换为最小值。