Sharpening metal carbide emitters
    1.
    发明授权
    Sharpening metal carbide emitters 有权
    磨削金属碳化物放射体

    公开(公告)号:US07828622B1

    公开(公告)日:2010-11-09

    申请号:US11924530

    申请日:2007-10-25

    IPC分类号: H01J9/00 H01J9/04

    CPC分类号: H01J9/042

    摘要: A method for sharpening a metal carbide emitter tip is disclosed. The metal carbide emitter tip is exposed to an oxygen rich, low vacuum environment when the metal carbide emitter tip is at a first temperature. The metal carbide emitter tip is rapidly heated to a higher second temperature at regular intervals of time.

    摘要翻译: 公开了一种用于磨削金属碳化物发射器尖端的方法。 当金属碳化物发射极尖端处于第一温度时,金属碳化物发射极尖端暴露于富氧的低真空环境中。 金属碳化物发射极尖端以规则的时间间隔快速加热到更高的第二温度。

    Contamination pinning for auger analysis
    2.
    发明授权
    Contamination pinning for auger analysis 有权
    螺旋钻分析的污染固定

    公开(公告)号:US07855362B1

    公开(公告)日:2010-12-21

    申请号:US11924492

    申请日:2007-10-25

    IPC分类号: H01J40/00

    CPC分类号: G01N23/2276

    摘要: Electron spectroscopy methods and apparatus are disclosed. A beam of primary electrons is applied to a measurement location on a surface of a sample. A pinning flux of electrons is applied to one or more pinning regions proximate the measurement location. The pinning flux is characterized by a location, size, shape, and electron flux configured such that contaminants preferentially migrate to the pinning region rather than the measurement location. Emissions from the surface resulting from interaction with the primary electrons and the surface of the sample at the measurement location are analyzed.

    摘要翻译: 公开了电子光谱学方法和装置。 将一束一次电子施加到样品表面上的测量位置。 电子的钉扎通量被施加到靠近测量位置的一个或多个钉扎区域。 钉扎通量的特征在于配置的位置,尺寸,形状和电子通量,使得污染物优先迁移到钉扎区而不是测量位置。 分析了与测量位置处的初级电子和样品表面相互作用产生的表面的排放。

    USE OF ION IMPLANTATION IN CHEMICAL ETCHING
    3.
    发明申请
    USE OF ION IMPLANTATION IN CHEMICAL ETCHING 有权
    在化学蚀刻中使用离子植入

    公开(公告)号:US20070264831A1

    公开(公告)日:2007-11-15

    申请号:US11752829

    申请日:2007-05-23

    IPC分类号: H01L21/02

    摘要: A method for controlling chemical dry etching to improve smoothness of an etched surface is disclosed. Ions are implanted into a surface to form a volatilizable compound at a temperature low enough to avoid, reduce, or eliminate formation of three-dimensional structures of the volatilizable compound that might create the roughness at an etched surface of the volatilizable compound. The ions are applied in a sufficient energy to penetrate to a predetermined depth of material that is to be removed from the surface in an etching cycle, and in a sufficient dosage to achieve full formation of the volatilizable compound. The surface of the volatilizable compound is exposed to a gas composition for a time duration sufficient to completely etch the volatilizable compound.

    摘要翻译: 公开了一种用于控制化学干蚀刻以改善蚀刻表面的平滑度的方法。 将离子植入表面以在足够低的温度下形成可挥发化合物,以避免,减少或消除可挥发化合物的三维结构的形成,这可能在可挥发化合物的蚀刻表面产生粗糙度。 以足够的能量施加离子以在蚀刻循环中渗透到要从表面除去的预定深度的材料,并以足够的剂量实现完全形成可挥发化合物。 可挥发化合物的表面暴露于气体组合物持续足够时间以完全蚀刻可挥发化合物。

    Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis
    6.
    发明授权
    Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis 失效
    用于测量衬底特性或制备用于分析的衬底的方法和系统

    公开(公告)号:US08765496B2

    公开(公告)日:2014-07-01

    申请号:US12110759

    申请日:2008-04-28

    IPC分类号: H01L21/00

    摘要: Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.

    摘要翻译: 提供了用于测量基板的特性或准备用于分析的基板的方法和系统。 用于测量衬底的特性的一种方法包括使用电子束去除衬底上的特征的一部分以暴露特征的剩余部分的横截面轮廓。 该特征可以是光致抗蚀剂特征。 该方法还包括测量横截面轮廓的特性。 制备用于分析的基板的方法包括使用化学蚀刻与电子束结合来去除靠近缺陷的衬底上的材料的一部分。 缺陷可能是地下缺陷或部分地下缺陷。 制备用于分析的衬底的另一种方法包括使用化学蚀刻与电子束和光束组合地去除邻近缺陷的衬底上的材料的一部分。

    AUGER ELEMENTAL IDENTIFICATION ALGORITHM
    7.
    发明申请
    AUGER ELEMENTAL IDENTIFICATION ALGORITHM 失效
    AUGER元素识别算法

    公开(公告)号:US20130341504A1

    公开(公告)日:2013-12-26

    申请号:US13913240

    申请日:2013-06-07

    IPC分类号: H01J49/00 H01J49/44

    摘要: System and methods for decomposing an Auger electron spectrum into elemental and chemical components, includes conditioning and input spectrum to generate a normalized input spectrum; determining statistical correlation between the normalized input spectrum and stored elemental spectral signatures; and characterizing elemental or chemical species in the input spectrum from the statistical correlation, wherein said conditioning the input spectrum includes estimating a background signal of non-Auger electrons in the input spectrum and subtracting the estimated background signal from the input spectrum.

    摘要翻译: 将俄歇电子谱分解为元素和化学成分的系统和方法包括调节和输入光谱以产生归一化输入光谱; 确定归一化输入光谱和存储的基本光谱特征之间的统计相关性; 以及从所述统计相关性表征所述输入光谱中的元素或化学物质,其中所述调节所述输入光谱包括估计所述输入光谱中的非俄歇电子的背景信号并从所述输入光谱中减去所估计的背景信号。

    Electron generation and delivery system for contamination sensitive emitters
    8.
    发明授权
    Electron generation and delivery system for contamination sensitive emitters 有权
    用于污染敏感发射器的电子发射和传输系统

    公开(公告)号:US08530867B1

    公开(公告)日:2013-09-10

    申请号:US13457897

    申请日:2012-04-27

    IPC分类号: H01J37/073

    摘要: Contamination may be removed from a field emitter unit during operation of the emitter unit in an environment at a pressure that lies within a range between 10−6 torr and 10−8 torr. At regular predetermined intervals an electron beam from an emitter tip may be deflected away from a path through a beam defining aperture and onto an electron collector. An electron beam current to the electron collector may be determined and the emitter unit may be flash heated if the current to the electron collector is below a threshold. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译: 在位于10-6托和10-8托之间的压力的环境中,在发射器单元操作期间,可以从场发射器单元去除污染物。 以规则的预定间隔,来自发射极尖端的电子束可以偏离通过光束限定孔径并且到电子收集器的路径。 可以确定到电子收集器的电子束电流,并且如果到电子收集器的电流低于阈值,则发射器单元可以被闪光加热。 要强调的是,该摘要被提供以符合要求抽象的规则,允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是,它不会用于解释或限制权利要求的范围或含义。

    Calibration standard for a dual beam (FIB/SEM) machine
    10.
    发明授权
    Calibration standard for a dual beam (FIB/SEM) machine 有权
    双光束(FIB / SEM)机器的校准标准

    公开(公告)号:US07576317B1

    公开(公告)日:2009-08-18

    申请号:US12116890

    申请日:2008-05-07

    IPC分类号: G01N21/84

    CPC分类号: H01J40/14

    摘要: Calibration of measurements of features made with a system having a micromachining tool and an analytical tool is disclosed. The measurements can be calibrated with a standard having a calibrated feature with one or more known dimensions. The standard may have one or more layers including a single crystal layer. The calibrated feature may include one or more vertical features characterized by one or more known dimensions and formed through the single crystal layer. A trench is formed in a sample with the micromachining tool to reveal a sample feature. The analytical tool measures one or more dimensions of the sample feature corresponding to one or more known dimensions of the calibrated feature. The known dimensions of the calibrated feature are measured with the same analytical tool. The measured dimensions of the sample feature and the calibrated feature can then be compared to the known dimensions of the calibrated feature.

    摘要翻译: 公开了使用具有微加工工具和分析工具的系统进行的特征的测量的校准。 测量可以用具有一个或多个已知尺寸的校准特征的标准进行校准。 标准可以具有包括单晶层的一层或多层。 经校准的特征可以包括由一个或多个已知尺寸表征并且通过单晶层形成的一个或多个垂直特征。 在微加工工具的样品中形成沟槽以露出样品特征。 分析工具测量与校准特征的一个或多个已知尺寸对应的样本特征的一个或多个维度。 使用相同的分析工具测量校准特征的已知尺寸。 然后将样本特征和校准特征的测量尺寸与已校准特征的已知尺寸进行比较。