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21 条记录 (耗时 0.037 秒)

    Method of making superhard tips for micro-probe microscopy and field emission
    1.
    发明授权
    Method of making superhard tips for micro-probe microscopy and field emission 失效
    制作超微观尖端的方法，用于微探针显微镜和场发射

    公开(公告)号：US5393647A

    公开(公告)日：1995-02-28

    申请号：US92780

    申请日：1993-07-16

    申请人： Armand P. Neukermans ,  Timothy G. Slater ,  Linda E. Whittlesey ,  Sean S. Cahill

    发明人： Armand P. Neukermans ,  Timothy G. Slater ,  Linda E. Whittlesey ,  Sean S. Cahill

    IPC分类号： G01Q70/10 ,  B81C1/00 ,  C23C16/00 ,  G01Q70/14 ,  G01Q70/16 ,  H01J9/02 ,  H01J37/073 ,  H01L21/302

    CPC分类号： G01Q70/16 ,  B81C1/00682 ,  B82Y35/00 ,  G01Q70/14 ,  H01J9/025 ,  B81B2201/12 ,  H01J2209/0226

    摘要： Forming micro-probe tips for an atomic force microscope, a scanning tunneling microscope, a beam electron emission microscope, or for field emission, by first thinning a tip of a first material, such as silicon. The tips are then reacted with a second material, such as atoms from an organic or ammonia vapor, at a temperature of about 1000.degree. C..+-.200.degree. C. and vacuum conditions for several minutes. Vapors such as methane, propane or acetylene will be converted to SiC or WC while ammonia will be converted to Si.sub.3 N.sub.4. The converted material will have different physical, chemical and electrical properties. For example, a SiC tip will be superhard, approaching diamond in hardness. Electrically conductive tips are suitable for field emission.

    摘要翻译： 通过首先使诸如硅的第一材料的尖端变薄，形成用于原子力显微镜，扫描隧道显微镜，束电子发射显微镜或用于场发射的微探针尖端。 然后将尖端与第二种材料（例如来自有机或氨蒸汽的原子）在约1000℃±200℃的温度和真空条件下反应数分钟。 蒸气如甲烷，丙烷或乙炔将转化为SiC或WC，而氨将转化为Si3N4。 转换的材料将具有不同的物理，化学和电学性能。 例如，SiC尖端将是超硬的，接近金刚石的硬度。 导电尖端适用于场发射。

    Compensated semiconductor pressure sensor
    7.
    发明授权
    Compensated semiconductor pressure sensor 有权
    补偿半导体压力传感器

    公开(公告)号：US06229190B1

    公开(公告)日：2001-05-08

    申请号：US09216073

    申请日：1998-12-18

    申请人： Janusz Bryzek ,  David W. Burns ,  Steven S. Nasiri ,  Sean S. Cahill

    发明人： Janusz Bryzek ,  David W. Burns ,  Steven S. Nasiri ,  Sean S. Cahill

    IPC分类号： H01L2982

    CPC分类号： G01L19/147 ,  G01L9/0042 ,  G01L9/0054 ,  G01L19/0038 ,  G01L19/143 ,  G01P2015/084 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/16151 ,  H01L2924/16195 ,  H01L2924/00014

    摘要： A semiconductor pressure sensor compatible with fluid and gaseous media applications is described. The semiconductor pressure sensor includes a sensor capsule having a semiconductor die and a silicon cap that is bonded to the semiconductor die. The semiconductor die includes a diaphragm that incorporates piezoresistive sensors thereon, and a stress isolation mechanism for isolating the diaphragm from packaging and mounting stresses. The silicon cap includes a cavity for allowing the diaphragm to deflect. The semiconductor pressure sensor further includes a pressure port that is hermetically attached to the semiconductor die. The sensor capsule and pressure port may be incorporated into a plastic housing. In one embodiment, the silicon cap is bonded to the semiconductor die to form an integral pressure reference. In an alternative embodiment, a second pressure port is provided for allowing gage or differential pressure measurements. A technique for incorporating the piezoresistive sensors is also described. An ASIC may be optionally attached to the silicon cap, and/or active electronic circuitry may be fabricated on the semiconductor die or silicon cap. Additional coatings may be optionally applied to the pressure port and semiconductor die for enhancing chemical resistance.

    摘要翻译： 描述了与流体和气体介质应用相兼容的半导体压力传感器。 半导体压力传感器包括具有半导体管芯和粘合到半导体管芯上的硅帽的传感器封装。 半导体管芯包括在其上结合有压阻传感器的隔膜以及用于将隔膜与封装和安装应力隔离的应力隔离机构。 硅帽包括用于允许隔膜偏转的空腔。 半导体压力传感器还包括气密地附接到半导体管芯的压力端口。 传感器胶囊和压力端口可以结合到塑料外壳中。 在一个实施例中，硅帽结合到半导体管芯以形成整体的压力参考。 在替代实施例中，提供了用于允许量规或差压测量的第二压力端口。 还描述了一种用于结合压阻传感器的技术。 ASIC可以可选地附接到硅帽，和/或有源电子电路可以制造在半导体管芯或硅帽上。 另外的涂层可以任选地施加到压力端口和半导体管芯上以提高耐化学性。

    Method for forming a semiconductor sensor
    8.
    发明授权
    Method for forming a semiconductor sensor 失效
    半导体传感器的形成方法

    公开(公告)号：US5484745A

    公开(公告)日：1996-01-16

    申请号：US141055

    申请日：1993-10-26

    申请人： Sean S. Cahill

    发明人： Sean S. Cahill

    IPC分类号： G01L9/12 ,  G01L9/00 ,  H01L29/84 ,  H01L27/20

    CPC分类号： G01L9/0042 ,  Y10S148/012 ,  Y10S148/159 ,  Y10S438/928 ,  Y10S438/977

    摘要： A method for forming at least one corrugation member in a semiconductor material, contains the step of: forming a semiconductor material layer onto a substrate, masking a first surface of the semiconductor material, etching the first surface to form first cavity thereon, removing a mask from the semiconductor material, masking the first surface and second surface of the semiconductor material, etching the second surface to form second cavity thereon, the second cavity being defined into the first cavity, removing the mask from the semiconductor material, depositing a specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material, etching an unmasked portion of the semiconductor material and depositing the same material as the abovementioned specified masking material selected in accordance with a characteristic of the substrate onto the semiconductor material and the specified masking material which has been deposited onto the semiconductor to form the corrugation member.

    摘要翻译： 一种用于在半导体材料中形成至少一个波纹构件的方法，包括以下步骤：在衬底上形成半导体材料层，掩蔽半导体材料的第一表面，蚀刻第一表面以在其上形成第一腔，去除掩模 从所述半导体材料掩蔽所述半导体材料的第一表面和第二表面，蚀刻所述第二表面以在其上形成第二腔，所述第二腔被限定到所述第一腔中，从所述半导体材料移除所述掩模，沉积特定的掩蔽材料 根据衬底的特性被选择到半导体材料上，蚀刻半导体材料的未掩模部分并将与根据衬底的特性选择的上述指定掩模材料相同的材料沉积到半导体材料上并且将特定掩模 已经沉积在s上的材料 以形成波纹构件。

    Chip-scale packaged pressure sensor
    10.
    发明授权
    Chip-scale packaged pressure sensor 失效
    芯片级封装压力传感器

    公开(公告)号：US06346742B1

    公开(公告)日：2002-02-12

    申请号：US09190500

    申请日：1998-11-12

    申请人： Janusz Bryzek ,  David W. Burns ,  Sean S. Cahill ,  Steven S. Nasiri

    发明人： Janusz Bryzek ,  David W. Burns ,  Sean S. Cahill ,  Steven S. Nasiri

    IPC分类号： H01L2312

    CPC分类号： G01L19/147 ,  G01L19/0038 ,  G01P2015/0828 ,  H01L2224/48091 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A chip-scale sensor package is described. In one embodiment, the chip-scale sensor package includes a semiconductor substrate having a sensor region, and a semiconductor cap having a recess. The semiconductor cap is bonded to the semiconductor substrate with a thermocompression bond to form a cavity therebetween. The semiconductor substrate is bonded to the semiconductor cap using different types of materials. The semiconductor substrate and/or the semiconductor cap may optionally include a semiconductor device such as an electronically trimmable integrated circuit fabricated thereon. In addition, the semiconductor substrate may optionally include an integral stress isolation flexible region for isolation of the sensor region.

    摘要翻译： 描述了芯片级传感器封装。 在一个实施例中，芯片级传感器封装包括具有传感器区域的半导体衬底和具有凹部的半导体盖。 半导体盖通过热压接合到半导体衬底上以在其间形成空腔。 使用不同类型的材料将半导体衬底接合到半导体帽。 半导体衬底和/或半导体帽可以可选地包括诸如其上制造的电子可调整体集成电路的半导体器件。 此外，半导体衬底可以可选地包括用于隔离传感器区域的整体应力隔离柔性区域。