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1.发明申请In-situ defect reduction techniques for nonpolar and semipolar (Al,Ga, In)N 有权非极性和半极性（Al，Ga，In）N的原位缺陷还原技术公开(公告)号：US20070267654A1
公开(公告)日：2007-11-22
申请号：US11801283
申请日：2007-05-09
IPC分类号： H01L31/00 , H01L21/28 , H01L21/3205
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L33/007
摘要： A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
摘要翻译： 公开了一种用于生长减少缺陷密度的平面氮化镓（GaN）膜的方法。 该方法包括以下步骤：（a）在GaN模板上生长至少一个氮化硅（SiN x N）纳米掩模层，以及（b）在SiN的顶部生长GaN膜的厚度， SUB> x 纳米掩模层。
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2.发明申请Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices 有权用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的技术公开(公告)号：US20070093073A1
公开(公告)日：2007-04-26
申请号：US11444946
申请日：2006-06-01
申请人： Robert Farrell , Troy Baker , Arpan Chakraborty , Benjamin Haskell , P. Pattison , Rajat Sharma , Umesh Mishra , Steven DenBaars , James Speck , Shuji Nakamura
发明人： Robert Farrell , Troy Baker , Arpan Chakraborty , Benjamin Haskell , P. Pattison , Rajat Sharma , Umesh Mishra , Steven DenBaars , James Speck , Shuji Nakamura
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L33/16 , B82Y20/00 , C30B23/025 , C30B25/18 , C30B29/403 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L33/0004 , H01L33/0062 , H01L33/007 , H01L33/02 , H01S5/0422 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/04
摘要： A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface.
摘要翻译： 一种用于生长和制造半极性（Ga，Al，In，B）N薄膜，异质结构和器件的方法，包括鉴定特定器件应用的所需材料性质，基于所需材料性质选择半极性生长取向，选择 用于生长选择的半极性生长取向的合适底物，在衬底上生长平面半极性（Ga，Al，In，B）N模板或成核层，以及生长半极（Ga，Al，In，B）N薄膜 ，平面半极性（Ga，Al，In，B）N模板或成核层上的异质结构或器件。 该方法导致大面积的半极性（Ga，Al，In，B）N薄膜，异质结构和器件平行于衬底表面。
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3.发明申请Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition 有权通过金属有机化学气相沉积制造非极性氮化铟镓薄膜，异质结构和器件公开(公告)号：US20050214992A1
公开(公告)日：2005-09-29
申请号：US11123805
申请日：2005-05-06
申请人： Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven Denbaars , Shuji Nakamura , Umesh Mishra
发明人： Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven Denbaars , Shuji Nakamura , Umesh Mishra
IPC分类号： H01L21/20 , H01L21/205 , H01L29/15 , H01L31/0312 , H01L33/00
CPC分类号： H01L21/0242 , H01L21/02378 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02647 , H01L33/0075 , H01L33/18 , Y10S438/938
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译： 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。
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4.发明申请公开(公告)号：US20070111488A1
公开(公告)日：2007-05-17
申请号：US11621479
申请日：2007-01-09
申请人： Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven DenBaars , Shuji Nakamura , Umesh Mishra
发明人： Arpan Chakraborty , Benjamin Haskell , Stacia Keller , James Speck , Steven DenBaars , Shuji Nakamura , Umesh Mishra
IPC分类号： H01L21/20
CPC分类号： H01L33/06 , B82Y20/00 , C30B25/02 , C30B29/403 , H01L21/0237 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02609 , H01L33/0075 , H01S5/0213 , H01S5/3202 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： A method for the fabrication of nonpolar indium gallium nitride (InGaN) films as well as nonpolar InGaN-containing device structures using metalorganic chemical vapor deposition (MOVCD). The method is used to fabricate nonpolar InGaN/GaN violet and near-ultraviolet light emitting diodes and laser diodes.
摘要翻译： 制造非极性铟镓氮（InGaN）膜以及使用金属有机化学气相沉积（MOVCD）的非极性含InGaN的器件结构的方法。 该方法用于制造非极性InGaN / GaN紫外线和近紫外发光二极管和激光二极管。
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5.发明申请IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N 有权非绝缘和二极管的现场缺陷减少技术（Al，Ga，In）N公开(公告)号：US20120091467A1
公开(公告)日：2012-04-19
申请号：US13331973
申请日：2011-12-20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L33/007
摘要： A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
摘要翻译： 公开了一种用于生长减少缺陷密度的平面氮化镓（GaN）膜的方法。 该方法包括以下步骤：（a）在GaN模板上生长至少一个氮化硅（SiNx）纳米掩模层，以及（b）在SiNx纳米掩模层的顶部生长GaN膜的厚度。
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6.发明申请IN-SITU DEFECT REDUCTION TECHNIQUES FOR NONPOLAR AND SEMIPOLAR (Al, Ga, In)N 有权非绝缘和二极管的现场缺陷减少技术（Al，Ga，In）N公开(公告)号：US20100193911A1
公开(公告)日：2010-08-05
申请号：US12759903
申请日：2010-04-14
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L33/007
摘要： A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
摘要翻译： 公开了一种用于生长减少缺陷密度的平面氮化镓（GaN）膜的方法。 该方法包括以下步骤：（a）在GaN模板上生长至少一个氮化硅（SiNx）纳米掩模层，以及（b）在SiNx纳米掩模层的顶部生长GaN膜的厚度。
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7.发明授权In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N 有权非极性和半极性（Al，Ga，In）N的原位缺陷还原技术公开(公告)号：US07723216B2
公开(公告)日：2010-05-25
申请号：US11801283
申请日：2007-05-09
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L33/007
摘要： A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
摘要翻译： 公开了一种用于生长减少缺陷密度的平面氮化镓（GaN）膜的方法。 该方法包括以下步骤：（a）在GaN模板上生长至少一个氮化硅（SiNx）纳米掩模层，以及（b）在SiNx纳米掩模层的顶部生长GaN膜的厚度。
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8.发明授权In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N 有权非极性和半极性（Al，Ga，In）N的原位缺陷还原技术公开(公告)号：US08643024B2
公开(公告)日：2014-02-04
申请号：US13331973
申请日：2011-12-20
IPC分类号： H01L29/20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L33/007
摘要： A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
摘要翻译： 公开了一种用于生长减少缺陷密度的平面氮化镓（GaN）膜的方法。 该方法包括以下步骤：（a）在GaN模板上生长至少一个氮化硅（SiNx）纳米掩模层，和（b）在SiNx纳米掩模层的顶部生长GaN膜的厚度。
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9.发明授权In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N 有权非极性和半极性（Al，Ga，In）N的原位缺陷还原技术公开(公告)号：US08105919B2
公开(公告)日：2012-01-31
申请号：US12759903
申请日：2010-04-14
IPC分类号： H01L21/20
CPC分类号： H01L21/02639 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L33/007
摘要： A method for growing reduced defect density planar gallium nitride (GaN) films is disclosed. The method includes the steps of (a) growing at least one silicon nitride (SiNx) nanomask layer over a GaN template, and (b) growing a thickness of a GaN film on top of the SiNx nanomask layer.
摘要翻译： 公开了一种用于生长减少缺陷密度的平面氮化镓（GaN）膜的方法。 该方法包括以下步骤：（a）在GaN模板上生长至少一个氮化硅（SiNx）纳米掩模层，以及（b）在SiNx纳米掩模层的顶部生长GaN膜的厚度。
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公开(公告)号：US20060091786A1
公开(公告)日：2006-05-04
申请号：US11264794
申请日：2005-11-01
申请人： Arpan Chakraborty , Likun Shen , Umesh Mishra
发明人： Arpan Chakraborty , Likun Shen , Umesh Mishra
IPC分类号： H01J1/62
CPC分类号： H01L25/0753 , F21K9/00 , H01L27/156 , H01L33/08 , H01L33/14 , H01L33/20 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/486 , H01L33/62 , H01L33/64 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
摘要： The present invention discloses a plurality of interdigitated pixels arranged in an array, having a very low series-resistances with improved current spreading and improved heat-sinking. Each pixel is a square with sides of dimension l. The series resistance is minimized by increasing the perimeter of an active region for the pixels. The series resistance is also minimized by shrinking the space between a mesa and n-contact for each pixel.
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