公开(公告)号：US20080299312A1

公开(公告)日：2008-12-04

申请号：US11574547

申请日：2005-09-02

申请人： Atsushi Itsuki ,  Akio Yanagisawa ,  Nobuyuki Soyama

发明人： Atsushi Itsuki ,  Akio Yanagisawa ,  Nobuyuki Soyama

IPC分类号： C23C16/06 ,  C09D5/00

CPC分类号： H01L21/02148 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31645

摘要： There is provided a raw material solution for MOCVD method having a high film forming rate, and a method for manufacturing composite oxide film containing Hf-Si using the raw material solution. There is also provided a method for manufacturing composite oxide film containing Hf-Si by using the raw material solution for MOCVD method providing an excellent adhesivity with a substrate.The raw material solution for MOCVD method of the invention includes an organic Si compound represented by the formula (R1R2N)nSiH(4-n) which is mixed in a predetermined ratio. A mixing ratio of the organic Si compound and the organic Hf compound is within the range of 0.001 to 0.5 wt % in a weight ratio (organic Hf compound/organic Si compound). The raw material solution for MOCVD method of the invention is prepared by mixing the compounds in a ratio within the above-mentioned range, dissolving the organic Hf compound in the organic Si compound, and heating this solution at a temperature of 20 to 100 ° C.

摘要翻译： 提供了具有高成膜速率的MOCVD法的原料溶液，以及使用原料溶液制造含有Hf-Si的复合氧化物膜的方法。 还提供了一种通过使用与基板提供优异的粘附性的用于MOCVD方法的原料溶液来制造包含Hf-Si的复合氧化物膜的方法。 本发明的MOCVD法的原料溶液包含以规定比例混合的由式（R1R2N）nSiH（4-n）表示的有机硅化合物。 有机Si化合物和有机Hf化合物的混合比例在有机Hf化合物/有机Si化合物的重量比为0.001〜0.5重量％的范围内。 本发明的MOCVD法的原料溶液通过以上述范围的比例混合化合物，将有机Hf化合物溶解在有机Si化合物中并在20〜100℃的温度下加热而制备 。

公开(公告)号：US20070231251A1

公开(公告)日：2007-10-04

申请号：US11570092

申请日：2005-06-10

申请人： Atsushi Itsuki ,  Akio Yanagisawa ,  Nobuyuki Soyama

发明人： Atsushi Itsuki ,  Akio Yanagisawa ,  Nobuyuki Soyama

IPC分类号： H01L21/316

CPC分类号： C23C16/405 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31645 ,  H01L28/55

摘要： Provided is a novel capacitor film forming material having a high growth rate and excellent step coverage, and obtained is a hafnium-containing film having excellent characteristics as a capacitor film with a high dielectric constant and a low reactivity with Si. A capacitor film forming material comprising a hafnium oxide film provided in a semiconductor memory device, is a capacitor film forming material in which the forming material comprises the organic hafnium compound of Hf(R1R2N)4 or Hf(OR3)4-n(R4)n and the content of Nb as an inevitable compound is 1 ppm or less.

摘要翻译： 提供一种具有高生长速度和优异的台阶覆盖率的新颖的电容器成膜材料，并且获得了作为具有高介电常数和与Si的低反应性的电容器膜的优异特性的含铪膜。 设置在半导体存储器件中的包含氧化铪膜的电容器膜形成材料是一种电容器膜形成材料，其中所述形成材料包含Hf（R 1 O 2 R 2）的有机铪化合物 或（Ⅳ）N N N N N N N N SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB > n ，作为不可避免的化合物的Nb的含量为1ppm以下。

公开(公告)号：US07196211B2

公开(公告)日：2007-03-27

申请号：US10939314

申请日：2004-09-09

申请人： Atsushi Itsuki ,  Nobuyuki Soyama ,  Akio Yanagisawa

发明人： Atsushi Itsuki ,  Nobuyuki Soyama ,  Akio Yanagisawa

IPC分类号： C07F7/00 ,  C23C16/00

CPC分类号： C07F7/003

摘要： A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.

摘要翻译： 提供含铪材料用于形成具有优异的蒸发稳定性和较高成膜速率的膜。 还提出了一种制备薄膜的方法。 用于成膜的含铪材料具有铪原子与氮原子或铪原子和氧原子的键的键。 材料中所含的Zr含量等于或小于650ppm。

公开(公告)号：US20080072792A1

公开(公告)日：2008-03-27

申请号：US11570120

申请日：2005-06-10

申请人： Akio Yanagisawa ,  Atsushi Itsuki ,  Nobuyuki Soyama

发明人： Akio Yanagisawa ,  Atsushi Itsuki ,  Nobuyuki Soyama

IPC分类号： C09D199/00

CPC分类号： H01L21/02271 ,  C23C16/045 ,  C23C16/409 ,  H01L21/02197 ,  H01L21/31691

摘要： A raw material solution for metal organic chemical vapor deposition having good film forming properties and excellent step coverage, and a composite oxide-based dielectric thin film produced by using the raw material, are provided. An improvement is made to the raw material solution for metal organic chemical vapor deposition having one or two or more organometallic compounds dissolved in an organic solvent, and the feature of the constitution lies in that the organic solvent is 1,3-dioxolane, or the organic solvent is a solvent mixture formed by mixing a first solvent consisting of 1,3-dioxolane, and a second solvent comprising one or two or more species selected from the group consisting of alcohols, alkanes, esters, aromatics, alkyl ethers and ketones, which is to be mixed with the 1,3-dioxolane.

摘要翻译： 提供了具有良好的成膜性能和优异的台阶覆盖率的金属有机化学气相沉积原料溶液，以及使用该原料生产的复合氧化物类介电薄膜。 对具有溶解在有机溶剂中的一种或两种以上有机金属化合物的金属有机化学气相沉积原料溶液进行了改进，其特征在于有机溶剂为1,3-二氧戊环，或 有机溶剂是通过混合由1,3-二氧戊环组成的第一溶剂和包含一种或两种以上选自醇，烷烃，酯，芳族化合物，烷基醚和酮的物质的第二溶剂形成的溶剂混合物， 其与1,3-二氧戊环混合。

公开(公告)号：US20050065358A1

公开(公告)日：2005-03-24

申请号：US10939314

申请日：2004-09-09

申请人： Atsushi Itsuki ,  Nobuyuki Soyama ,  Akio Yanagisawa

发明人： Atsushi Itsuki ,  Nobuyuki Soyama ,  Akio Yanagisawa

IPC分类号： C23C16/40 ,  C01G25/00 ,  C01G27/00 ,  C01G27/02 ,  C07F7/00 ,  H01L21/316 ,  C07F7/28

CPC分类号： C07F7/003

摘要： A hafnium-containing material is presented for forming a film having excellent vaporization stability and higher film formation rate. Also a method for producing the film is presented. The hafnium-containing material for film formation has a bond of a hafnium atom with a nitrogen atom, or a bond of a hafnium atom and an oxygen atoms. Zr content contained in the material is equal to or less than 650 ppm.

摘要翻译： 提供含铪材料用于形成具有优异的蒸发稳定性和较高成膜速率的膜。 还提出了一种制备薄膜的方法。 用于成膜的含铪材料具有铪原子与氮原子或铪原子和氧原子的键的键。 材料中所含的Zr含量等于或小于650ppm。

公开(公告)号：US20120295100A1

公开(公告)日：2012-11-22

申请号：US13471845

申请日：2012-05-15

申请人： Toshiaki Watanabe ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Toshihiro Doi

发明人： Toshiaki Watanabe ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Toshihiro Doi

IPC分类号： B32B9/00 ,  B05D5/12

CPC分类号： H01L41/1876 ,  C30B1/023 ,  C30B29/16 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/28291 ,  H01L28/55 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75 ,  H01L29/516 ,  H01L35/22 ,  H01L35/34 ,  H01L41/0815 ,  H01L41/318 ,  H01L41/319 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/26 ,  Y10T428/265

摘要： A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal daces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 5 nm to 30 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer to be in the (110) plane.

摘要翻译： 一种铁电薄膜的制造方法，其特征在于，在具有基板主体的基板的基极上涂布形成铁电薄膜的组合物，并且在（111）方向上取向晶体取向的基极，对所述涂布组合物进行煅烧 ，然后进行焙烧，使涂布的组合物结晶，使基底电极上形成铁电薄膜，其中，该方法包括通过将该组合物涂布在基极上，煅烧涂布组合物而形成取向控制层， 并且对涂覆组合物进行焙烧，其中涂覆在基极上的组合物的量被控制为使结晶后的取向控制层的厚度在5nm至30nm的范围内，从而控制 取向控制层位于（110）面。

公开(公告)号：US20120100330A1

公开(公告)日：2012-04-26

申请号：US13380288

申请日：2010-04-21

申请人： Nobuyuki Soyama ,  Toshiaki Watanabe ,  Hideaki Sakurai

发明人： Nobuyuki Soyama ,  Toshiaki Watanabe ,  Hideaki Sakurai

IPC分类号： B32B3/02 ,  B44C1/22 ,  B05D3/10 ,  C09K13/00

CPC分类号： H01L21/02087 ,  H01L21/02197 ,  H01L21/02282

摘要： Coated film is removed at an outer peripheral edge of a substrate before heat-treating in CSD method by spraying or dropping liquid for removing CSD coated film including water and organic solvent mixed in a weight ratio of 50:50 to 0:100, in which the organic solvent is one or more selected from the group consisting of β-diketones, β-ketoesters, polyhydric alcohol, carboxylic acids, alkanolamines, α-hydroxy carboxylic acid, α-hydroxy carbonyl derivatives, and hydrazone derivatives.

摘要翻译： 在CSD法热处理之前，通过喷涂或滴加用于除去包含以重量比为50:50至0:100混合的水和有机溶剂的CSD涂膜的液体，在基板的外周边缘处去除涂覆膜，其中 所述有机溶剂是选自由β-二酮，酮基酯，多元醇，羧酸，链烷醇胺，α-羟基羧酸，α-羟基羰基衍生物和腙衍生物组成的组中的一种或多种。

公开(公告)号：US6051858A

公开(公告)日：2000-04-18

申请号：US892699

申请日：1997-07-15

申请人： Hiroto Uchida ,  Nobuyuki Soyama ,  Katsumi Ogi ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Hiroto Uchida ,  Nobuyuki Soyama ,  Katsumi Ogi ,  Michael C. Scott ,  Joseph D. Cuchiaro ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： H01L21/8247 ,  H01L21/02 ,  H01L21/316 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

CPC分类号： H01L27/11502 ,  H01L28/55

摘要： A transistor on a silicon substrate is covered by an insulating layer. A conducting plug passes through the insulating layer to the transistor drain. The bottom electrode of a ferroelectric capacitor that directly overlies the plug and drain contacts the plug. The ferroelectric layer is self-patterned and completely overlies the memory cell. A self-patterned sacrificial layer completely overlies the ferroelectric layer. The bottom electrode of the capacitor is completely enclosed by the ferroelectric layer, the insulating layer, and the conducting plug. The sacrificial layer comprises either: a) a metal selected from a first metal group consisting of tantalum, hafnium, tungsten, niobium and zirconium; or b) a metallic compound comprising one or more metals selected from a second group of metals consisting of titanium, tantalum, hafnium, tungsten, niobium and zirconium compounded with one or more metals from a third group of metals consisting of strontium, calcium, barium, bismuth, cadmium, and lead, such as strontium tantalate, tantalum oxide, bismuth deficient strontium bismuth tantalate, strontium titanate, strontium zirconate, strontium niobate, tantalum nitride, and tantalum oxynitride.

摘要翻译： 硅衬底上的晶体管被​​绝缘层覆盖。 导电插塞通过绝缘层到晶体管漏极。 直接覆盖插头和漏极的铁电电容器的底部电极接触插头。 铁电层是自我构图的，并且完全覆盖在存储单元上。 自图案牺牲层完全覆盖铁电层。 电容器的底部电极被铁电体层，绝缘层和导电插塞完全包围。 牺牲层包括：a）选自由钽，铪，钨，铌和锆组成的第一金属组的金属; 或b）金属化合物，其包含一种或多种金属，所述金属选自由钛，钽，铪，钨，铌和锆组成的第二组金属，所述金属由一种或多种金属组成，所述第三组金属由锶，钙，钡 ，铋，镉和铅，例如钽酸锶，氧化钽，铋铋铋钽酸锶，钛酸锶，锆酸锶，铌酸铌，氮化钽和氮氧化钽。

公开(公告)号：US5792592A

公开(公告)日：1998-08-11

申请号：US653444

申请日：1996-05-24

申请人： Hiroto Uchida ,  Nobuyuki Soyama ,  Kensuke Kageyama ,  Katsumi Ogi ,  Michael C. Scott ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Hiroto Uchida ,  Nobuyuki Soyama ,  Kensuke Kageyama ,  Katsumi Ogi ,  Michael C. Scott ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： G03F7/027 ,  C08F2/48 ,  C08F20/06 ,  C08F20/26 ,  C08F30/04 ,  C30B29/30 ,  C30B29/68 ,  G03F7/004 ,  G03F7/029 ,  G03F7/40 ,  H01L21/02 ,  H01L21/027 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  G03F7/30

CPC分类号： H01L21/31691 ,  G03F7/0047 ,  H01L21/312 ,  H01L28/55

摘要： A photosensitive liquid solution is used to make thin films for use in integrated circuits. The photosensitive liquid solution contains a photo initiator, and solvent, and a mixture of metals bonded to free-radical-susceptible monomers. The metals are mixed in amounts corresponding to the desired stoichiometry of a metal oxide thin film that derives from the. The photosensitive liquid solution is applied to a substrate, soft baked, and exposed to ultraviolet radiation under a photo mask. The ultraviolet radiation patterns the soft-baked film through a free radical polymerization chain reaction. A solvent etch is used to remove the unpolymerized portion of the polymerized film. The remaining thin film pattern is annealed to provide a patterned metal oxide film.

摘要翻译： 使用感光性液体溶液制造用于集成电路的薄膜。 感光性液体溶液含有光引发剂和溶剂，以及与自由基易感单体结合的金属的混合物。 金属以与从该衍生的金属氧化物薄膜的期望化学计量相对应的量混合。 将感光性液体溶液施加到基材上，软化并在光掩模下暴露于紫外线下。 紫外线辐射通过自由基聚合反应形成软烘烤膜。 使用溶剂蚀刻来除去聚合膜的未聚合部分。 将剩余的薄膜图案退火以提供图案化的金属氧化物膜。

公开(公告)号：US5630872A

公开(公告)日：1997-05-20

申请号：US570576

申请日：1995-12-11

申请人： Katsumi Ogi ,  Tadashi Yonezawa ,  Nobuyuki Soyama ,  Kensuke Kageyama

发明人： Katsumi Ogi ,  Tadashi Yonezawa ,  Nobuyuki Soyama ,  Kensuke Kageyama

IPC分类号： C03C17/25 ,  C23C18/14 ,  C23C26/00 ,  H01L21/314 ,  H01L21/316

CPC分类号： C03C17/25 ,  C23C18/14 ,  C23C26/00 ,  H01L21/316 ,  H01L21/31691 ,  C03C2218/11 ,  C03C2218/328

摘要： A composition for formation of thin-film patterns of a metal oxide which comprises a metal alkoxide and one or more nitro compounds selected from the group consisting of nitrobenzyl alcohol derivatives, nitrobenzaldehyde derivatives, nitrostyrol derivatives, nitroacetophenone derivatives, nitroanisole derivatives and nitrofuran derivatives. This composition is applied to a substrate which is then irradiated with light to perform patterning by utilizing the difference in solubility between the light-irradiated portion and the non-light-irradiated portion, attributed to the photodecomposition reaction of the irradiated portion. A photoreactive compound is added to a starting solution which contains an organic solvent and an organic metal compound, the solution is misted, and the resulting mist is deposited on a substrate while irradiating with light.

摘要翻译： 用于形成金属氧化物的薄膜图案的组合物，其包含金属醇盐和一种或多种选自硝基苄醇衍生物，硝基苯甲醛衍生物，硝基苯乙烯衍生物，硝基苯乙酮衍生物，硝基苯甲醚衍生物和硝基呋喃衍生物的硝基化合物。 将该组合物施加到基材上，然后用光照射，由于照射部分的光分解反应，利用光照射部分和非光照射部分之间的溶解度差异来进行图案化。 向包含有机溶剂和有机金属化合物的起始溶液中加入光反应性化合物，使溶液发生雾化，并将所得雾沉积在基板上同时照射光。