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公开(公告)号：US5306778A
公开(公告)日：1994-04-26
申请号：US16182
申请日：1993-02-11
申请人： Atushi Ishida , Katsuro Oomura , Yuji Yamamoto , Yuji Nakagawa , Tateki Furuyama , Hisao Nagai , Toshio Teramoto , Yasuo Takahashi , Hideki Ueda , Kazuhiko Yamamoto , Toshihiro Shimamura , Yoshinobu Suzuki
发明人： Atushi Ishida , Katsuro Oomura , Yuji Yamamoto , Yuji Nakagawa , Tateki Furuyama , Hisao Nagai , Toshio Teramoto , Yasuo Takahashi , Hideki Ueda , Kazuhiko Yamamoto , Toshihiro Shimamura , Yoshinobu Suzuki
IPC分类号： C08F279/02 , C08F287/00 , C08L23/02 , C08L51/04 , C08L75/04 , C08L77/00 , C08F379/02 , C08F387/00
CPC分类号： C08L23/02 , C08F279/02 , C08F287/00 , C08L51/04 , C08L75/04 , C08L77/00
摘要： A process for producing a rubber-modified thermoplastic resin, which comprises polymerizing (B) 30-100% by weight of an aromatic alkenyl compound monomer and/or an alkyl (meth)acrylate monomer and (C) 70-0% by weight of at least one other monomer compound copolymerizable therewith, in the presence of (A) a hydrogenated diene copolymer obtained by hydrogenating a diene copolymer comprising a rndom copolymer of 50% by weight or more of at least one conjugated diene and 50% by weight or less of an alkenyl aromatic compound until at least 70% by weight of the olefinic unsaturation of the diene copolymer is hydrogenated. The hydrogenated diene copolymer (A) may be a hydrogenated copolymer consisting of an A-B block copolymer or an A-B-C block copolymer (A is an alkenyl aromatic compound polymer block, B is an alkenyl aromatic compound-conjugated diene random copolymer block, and C is a polymer block composed mainly of an alkenyl aromatic compound), wherein(i) the weight ratio of the alkenyl aromatic compound/the conjugated diene is 5-50/95-50,(ii) the total amount of the alkenyl aromatic compounds of the block A and the block C in the copolymer is 3-40% by weight, and(iii) the vinyl configuration content in the conjugated diene portion of the block B is 10-90%, and wherein at least 90% of the double bonds of the conjugated diene is saturated.
摘要翻译： 一种制备橡胶改性热塑性树脂的方法，其包括将（B）30-100重量％的芳族烯基化合物单体和/或（甲基）丙烯酸烷基酯单体和（C）70重量％ 在（A）通过氢化包含50重量％以上的至少一种共轭二烯和50重量％以下的共聚物的二烯共聚物而获得的氢化二烯共聚物的存在下，可以与其共聚的至少一种其它单体化合物 的链烯基芳族化合物直到二烯共聚物的烯属不饱和键的至少70重量％被氢化。 氢化二烯共聚物（A）可以是由AB嵌段共聚物或ABC嵌段共聚物（A是烯基芳香族化合物聚合物嵌段，B是烯基芳香族化合物 - 共轭二烯无规共聚物嵌段）构成的氢化共聚物，C是 主要由链烯基芳族化合物组成的聚合物嵌段），其中（i）链烯基芳族化合物/共轭二烯的重量比为5-50 / 95-50，（ii）嵌段的烯基芳族化合物的总量 A和共聚物中的嵌段C为3-40重量％，和（iii）嵌段B的共轭二烯部分中的乙烯基构型含量为10-90％，并且其中至少90％ 共轭二烯是饱和的。
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公开(公告)号：US5434219A
公开(公告)日：1995-07-18
申请号：US194123
申请日：1994-02-09
IPC分类号： C08F279/02 , C08F287/00 , C08L23/02 , C08L51/04 , C08L75/04 , C08L77/00
CPC分类号： C08L23/02 , C08F279/02 , C08F287/00 , C08L51/04 , C08L75/04 , C08L77/00
摘要： A thermoplastic resin composition comprising: (I) a rubber-modified thermoplastic resin, and (II) a transparent thermoplastic resin, a thermoplastic elastomer or combination thereof, provided that said resin (I) is excluded from component (II), wherein the rubber-modified thermoplastic resin (I) is a resin prepared by polymerizing (B) 30-100% by weight of at least one member selected from the group consisting of an aromatic alkenyl compound monomer and an alkyl (meth)acrylate monomer and (C) 70-0% by weight of at least one other monomeric compound copolymerizable therewith, in the presence of 5-45% by weight of (A) a hydrogenated diene copolymer of component (I) obtained by hydrogenating a diene copolymer comprising a random copolymer of 50% by weight or more of at least one conjugated diene and 50% by weight or less of an alkenyl aromatic compound until at least 70% by weight of the olefinic unsaturation of the diene copolymer is hydrogenated.
摘要翻译： 一种热塑性树脂组合物，其包含：（I）橡胶改性的热塑性树脂，和（II）透明热塑性树脂，热塑性弹性体或其组合，条件是所述树脂（I）不在组分（II）中，其中橡胶 改性热塑性树脂（I）是通过聚合（B）30-100重量％的至少一种选自芳族烯基化合物单体和（甲基）丙烯酸烷基酯单体的组分和（C） 70重量％的至少一种可与其共聚的其它单体化合物，在5-45重量％的（A）组分（I）的氢化二烯共聚物存在下，通过氢化包含无规共聚物 50重量％以上的至少一种共轭二烯和50重量％以下的链烯基芳香族化合物，直到二烯共聚物的烯属不饱和键的至少70重量％被氢化为止。
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公开(公告)号：US5409996A
公开(公告)日：1995-04-25
申请号：US200423
申请日：1994-02-23
摘要： A thermoplastic resin composition comprising (a) 50-99% by weight of a polyarylenesulfide resin and (b) 50-1% by weight of a norbornene-type resin as essential components is disclosed. This resin composition possesses excellent stiffness properties and high heat resistance, and exhibits only small anisotropic properties and superior moldability during the molding operation, and is useful for molding various electronic parts, household electric or electronic parts and articles. Those having a Vicut softening point of 200.degree. C. or higher are especially useful for sealing electronic parts or photo-semiconductors.
摘要翻译： 公开了一种热塑性树脂组合物，其包含（a）50-99重量％的聚芳基醚树脂和（b）50-1重量％的降冰片烯型树脂作为必要成分。 该树脂组合物具有优异的硬度性能和高耐热性，并且在成型操作期间仅具有小的各向异性和优异的成型性，并且可用于模制各种电子部件，家用电器或电子部件和制品。 具有Vicut软化点为200℃或更高的那些对于密封电子部件或光电半导体特别有用。
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公开(公告)号：US08866119B2
公开(公告)日：2014-10-21
申请号：US13051264
申请日：2011-03-18
申请人： Kazuhiko Yamamoto , Kenji Aoyama
发明人： Kazuhiko Yamamoto , Kenji Aoyama
CPC分类号： H01L45/04 , G11C13/0014 , G11C13/025 , G11C2213/16 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2463 , H01L27/2481 , H01L45/1233 , H01L45/145 , H01L45/149 , H01L45/1675
摘要： According to one embodiment, a memory device includes a selection element layer, a nanomaterial aggregate layer, and a fine particle. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer has a plurality of micro conductive bodies aggregated with an interposed gap. The fine particle has at least a surface made of silicon oxynitride. The fine particle is dispersed between the micro conductive bodies in one portion of the nanomaterial aggregate layer piercing the nanomaterial aggregate layer in a thickness direction.
摘要翻译： 根据一个实施例，存储器件包括选择元件层，纳米材料聚集体层和细颗粒。 纳米材料聚集层层叠在选择元件层上。 纳米材料聚集体层具有多个与插入的间隙聚集的微导电体。 细颗粒至少具有由氮氧化硅制成的表面。 微细颗粒分散在纳米材料聚集体层的一部分中的微导电体之间，该纳米材料聚集体层在厚度方向上穿透纳米材料聚集体层。
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5.发明授权Nonvolatile semiconductor memory device and method for manufacturing nonvolatile semiconductor memory device 有权用于制造非易失性半导体存储器件的非易失性半导体存储器件和方法公开(公告)号：US08729517B2
公开(公告)日：2014-05-20
申请号：US13044951
申请日：2011-03-10
申请人： Takuya Konno , Kazuhiko Yamamoto
发明人： Takuya Konno , Kazuhiko Yamamoto
IPC分类号： H01L45/00
CPC分类号： H01L45/141 , H01L27/2409 , H01L27/2463 , H01L45/148 , H01L45/1608
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a first interconnect, a second interconnect and a resistance change layer. The first interconnect extends in a first direction on a major surface of a substrate. The second interconnect extends in a second direction non-parallel to the first direction. The resistance change layer includes a conductive nanomaterial, the resistance change layer located between the first interconnect and the second interconnect and being capable of reversibly changing between a first resistance state and a second resistance state by a voltage applied or a current supplied through the first interconnect and the second interconnect. The resistance change layer has a density varied along a third direction generally perpendicular to the first direction and the second direction.
摘要翻译： 根据一个实施例，非易失性半导体存储器件包括第一互连，第二互连和电阻变化层。 第一互连在衬底的主表面上沿第一方向延伸。 第二互连在不平行于第一方向的第二方向上延伸。 电阻变化层包括导电纳米材料，电阻变化层位于第一互连和第二互连之间，并且能够通过施加的电压或通过第一互连提供的电流在第一电阻状态和第二电阻状态之间可逆地改变 和第二互连。 电阻变化层的密度沿大致垂直于第一方向和第二方向的第三方向变化。
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公开(公告)号：US20120205609A1
公开(公告)日：2012-08-16
申请号：US13235842
申请日：2011-09-19
申请人： Shigeto OSHINO , Kenji Aoyama , Kazuhiko Yamamoto , Shinichi Nakao , Kei Watanabe , Satoshi Ishikawa
发明人： Shigeto OSHINO , Kenji Aoyama , Kazuhiko Yamamoto , Shinichi Nakao , Kei Watanabe , Satoshi Ishikawa
IPC分类号： H01L45/00 , H01L21/8239 , B82Y99/00
CPC分类号： H01L27/101 , B82Y10/00 , B82Y30/00 , H01L27/2481 , H01L45/149 , H01L45/1608
摘要： According to one embodiment, a memory device includes a lower electrode layer, a nanomaterial assembly layer, a protective layer and an upper electrode layer. The nanomaterial assembly layer is provided on the lower electrode layer and includes a plurality of fine conductors assembled via a gap. The protective layer is provided on the nanomaterial assembly layer, is conductive, is in contact with the fine conductors, and includes an opening. The upper electrode layer is provided on the protective layer and is in contact with the protective layer.
摘要翻译： 根据一个实施例，存储器件包括下电极层，纳米材料组合层，保护层和上电极层。 纳米材料组装层设置在下电极层上，并且包括通过间隙组装的多个细导体。 保护层设置在纳米材料组装层上，导电，与细导体接触，并包括开口。 上电极层设置在保护层上并与保护层接触。
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公开(公告)号：US20120119179A1
公开(公告)日：2012-05-17
申请号：US13354380
申请日：2012-01-20
CPC分类号： B82Y10/00 , H01L27/1021 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/149 , H01L45/1608
摘要： According to one embodiment, a memory device includes a nanomaterial aggregate layer of a plurality of fine conductors aggregating via gaps and an insulating material disposed in the gaps.
摘要翻译： 根据一个实施例，存储器件包括通过间隙聚集的多个细小导体的纳米材料聚集体层和设置在间隙中的绝缘材料。
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公开(公告)号：US20120056145A1
公开(公告)日：2012-03-08
申请号：US13018765
申请日：2011-02-01
CPC分类号： H01L45/16 , B82Y10/00 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/149 , H01L45/1608 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a selection element layer and a nanomaterial aggregate layer. The selection element layer includes silicon. The nanomaterial aggregate layer is stacked on the selection element layer. The nanomaterial aggregate layer includes a plurality of micro conductive bodies and fine particles dispersed in a plurality of gaps between the micro conductive bodies. At least a surface of the fine particle is made of an insulating material other than silicon oxide.
摘要翻译： 根据一个实施例，非易失性存储器件包括选择元件层和纳米材料聚集层。 选择元件层包括硅。 纳米材料聚集层层叠在选择元件层上。 纳米材料聚集体层包括分散在微导电体之间的多个间隙中的多个微导电体和微粒。 至少微细颗粒的表面由氧化硅以外的绝缘材料制成。
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公开(公告)号：US20110303888A1
公开(公告)日：2011-12-15
申请号：US13044865
申请日：2011-03-10
IPC分类号： H01L45/00
CPC分类号： H01L27/2481 , H01L27/2409 , H01L45/065 , H01L45/1233 , H01L45/1608 , H01L45/1675
摘要： According to one embodiment, a nonvolatile memory device includes a memory cell connected to a first interconnect and a second interconnect. The memory cell includes a plurality of layers. The plurality of layers includes a carbon-containing memory layer sandwiched between a first electrode film and a second electrode film and a carbon-containing barrier layer provided at least one of between the first electrode film and the memory layer and between the second electrode film and the memory layer. The barrier layer has lower electrical resistivity than the memory layer.
摘要翻译： 根据一个实施例，非易失性存储器件包括连接到第一互连和第二互连的存储单元。 存储单元包括多个层。 多个层包括夹在第一电极膜和第二电极膜之间的含碳存储层和设置在第一电极膜和存储层之间以及第二电极膜和第二电极膜之间的至少一个的含碳阻挡层， 内存层。 阻挡层的电阻率比存储层低。
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公开(公告)号：US20100321454A1
公开(公告)日：2010-12-23
申请号：US12820278
申请日：2010-06-22
申请人： Kenichi Seguchi , Kazuhiko Yamamoto , Ichiro Miyamoto , Masayuki Matsubara , Masayoshi Iwasaki , Hideyuki Uemura
发明人： Kenichi Seguchi , Kazuhiko Yamamoto , Ichiro Miyamoto , Masayuki Matsubara , Masayoshi Iwasaki , Hideyuki Uemura
IPC分类号： B41J3/407
CPC分类号： B41M5/52 , B41M5/5245 , B41M5/5254 , B41M5/5263 , B41M5/5281 , B41M5/529
摘要： The present invention relates to an inkjet recording sheet for forming an image using aqueous pigment ink comprising: a substrate; and an ink-receiving layer formed on the substrate, wherein the ink-receiving layer is obtained by applying, on the substrate, a coating composition containing: a cationic acrylic silicone emulsion-based resin having a hydrolyzable silyl group as a crosslinking component; a cationic polyether-based urethane resin; and a carbodiimide group-containing resin, followed by curing the applied coating composition, and wherein, in the coating composition, the content of the cationic acrylic silicone emulsion-based resin is 2 to 7% by mass, the content of the cationic polyether-based urethane resin is 88 to 94% by mass, and the content of the carbodiimide group-containing resin is 2 to 6% by mass in terms of solid matter.
摘要翻译： 本发明涉及一种使用含水颜料墨水形成图像的喷墨记录纸，包括：基材; 以及形成在所述基板上的墨接收层，其中所述墨接收层通过在所述基板上涂布涂料组合物而获得，所述涂料组合物包含：具有可水解甲硅烷基作为交联组分的阳离子丙烯酸硅酮乳液基树脂; 阳离子聚醚基聚氨酯树脂; 和含有碳化二亚胺基团的树脂，然后使所涂覆的涂料组合物固化，其中在涂料组合物中，阳离子丙烯酸硅氧烷乳液基树脂的含量为2〜7质量％，阳离子聚醚 - 基于聚氨酯的聚氨酯树脂为88〜94质量％，含碳二亚胺基的树脂的含量以固形物计为2〜6质量％。
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